onsemi-2N6052G
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2N6052
Preferred Device
Darlington Complementary
Silicon Power
T
r
ansistors
This package is designed for general
−
purpose amplifier and low
frequency switching applications.
Features
•
High DC Current Gain — h
= 3500 (Typ) @ I
= 5.0 Adc
FE
C
12 AMPERE
•
Collector
−
Emitter Sustaining
V
o
ltage — @ 100 mA
V
= 100 Vdc (Min)
COMPLEMENTARY SILICON
POWER TRANSISTOR
100 VOLTS, 150 WATTS
CEO(sus)
•
Monolithic Construction with Built
−
In Base
−
Emitter Shunt Resistors
•
This is a Pb
−
Free Device*
COLLECTOR
CASE
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Symbol
Value
100
100
5.0
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
BASE
1
V
CB
EB
V
Collector Current
−
Continuous
I
C
12
20
Peak
EMITTER 2
Base Current
I
B
0.2
Adc
T
o
tal Power Dissipation @ T
= 25
°
C
P
D
150
0.857
W
W/
°
C
MARKING
DIAGRAM
C
Derate above 25
°
C
Operating and Storage
T
e
mperature
Range
T , T
−
65 to
+
2
00
°
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
2N6052G
AYYWW
MEX
Symbol
Max
Unit
1
2
Thermal Resistance, Junction
−
to
−
Case
R
1.17
°
C/W
q
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates
JEDEC Registered Data.
TO
−
204AA (TO
−
3)
CASE 1
−
07
STYLE 1
160
140
120
100
80
2N6052 =
Device Code
G
= Pb
−
Free Package
A
= Location
Code
=
Y
e
ar
= Work
Week
= Country
of Orgin
YY
WW
MEX
60
ORDERING INFORMATION
40
Device
2N6052G
Package
Shipping
100 Units/Tray
20
TO
−
3
(Pb
−
Free)
0
0
25
50
75
100
125
150
175
200
T ,
CASE TEMPERATURE (
°
C)
C
Preferred
devices are recommended choices for future use
and best overall value.
Figure 1. Power Derating
*For additional information on our Pb
−
Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
September, 2008
−
Rev. 5
2N6052/D
2N6052
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(I =
100 mAdc, I
= 0)
V
CEO(sus)
100
−
Vdc
C
B
(V =
50 Vdc, I
= 0)
I
CEO
−
1.0
mAdc
mAdc
CE
B
Collector Cutoff Current
I
CEX
(V =
Rated V
CEO BE(off)
, V
= 1.5 Vdc)
CE
CEO BE(off)
−
−
0.5
5.0
(V =
Rated V
CE
, V
= 1.5 Vdc, T
= 150
_
C)
C
Emitter Cutoff Current
(V =
5.0 Vdc, I
= 0)
I
−
2.0
mAdc
BE
C
EBO
DC Current Gain
h
FE
−
(I =
6.0 Adc, V
= 3.0 Vdc)
C
CE
750
100
18,000
−
(I =
12 Adc, V
= 3.0 Vdc)
C
CE
Collector
−
Emitter Saturation Voltage
V
V
Vdc
CE(sat)
(I =
6.0 Adc, I
= 24 mAdc)
C
B
−
−
2.0
3.0
(I =
12 Adc, I
= 120 mAdc)
C
B
Base
−
Emitter Saturation Voltage
Base
−
Emitter On Voltage
(I =
12 Adc, I
= 120 mAdc)
−
−
4.0
2.8
Vdc
Vdc
C
B
BE(sat)
(I =
6.0 Adc, V
= 3.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small
−
Signal Short Circuit Forward
|h |
fe
4.0
−
MHz
Current Transfer Ratio
(I =
5.0 Adc, V
= 3.0 Vdc, f = 1.0 MHz)
C CE
Output Capacitance
(V =
10 Vdc, I
= 0, f = 0.1 MHz)
C
h
−
500
pF
CB
E
ob
Small
−
Signal Current Gain
(I =
5.0 Adc, V
= 3.0 Vdc, f = 1.0 kHz)
300
−
−
C
CE
fe
2. Indicates
JEDEC Registered Data.
3. Pulse
test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
V
CC
-ꢂ30 V
10
R
& R
VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
D MUST
BE FAST RECOVERY TYPE, eg:
B
2N6052
2N6059
1
5.0
ꢀ1N5825 USED ABOVE I
≈
100 mA
ꢀMSD6100 USED BELOW I
≈
100 mA
B
R
C
t
s
SCOPE
B
TUT
2.0
V
2
R
B
t
approx
+ꢂ8.0 V
f
1.0
0.5
D
1
≈
5.0 k
51
≈
50
0
t
r
V
1
+ꢂ4.0 V
approx
-ꢂ8.0 V
V
= 30 V
I /I
= 250
CC
t @
V
d
= 0
BE(off)
25
m
s
for t
and t , D
is disconnected
d
r
1
C
B
= I
0.2
0.1
and V
= 0
I
2
B1 B2
t , t
≤
10 ns
r
f
DUTY CYCLE = 1.0%
T =
25
°
C
J
0.2
0.5
1.0
3.0
5.0
10
20
For NPN test circuit reverse diode and voltage polarities.
I ,
COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
2
2N6052
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
P
(pk)
R
R
(t) = r(t) R
q
JC
q
q
JC
JC
0.1
0.07
0.05
= 1.17
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
t
1
1
t
2
0.03
0.02
0.01
T
– T
= P
C
q
(t)
J(pk)
(pk) JC
DUTY CYCLE, D = t
/t
1
2
SINGLE
PULSE
0.01
0.01
0.02
0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
20 30
50
100
200 300
500
1000
Figure 4. Thermal Response
ACTIVE
−
REGION SAFE OPERATING AREA
50
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
−
V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
0.1 ms
C
CE
20
10
5.0
0.5 ms
1.0 ms
5.0 ms
The data of Figures 5, and 6 is based on T
T is
variable depending on conditions. Second breakdown
C
= 200
_
C;
J(pk)
2.0
1.0
0.5
pulse limits are valid for duty cycles to 10% provided
T =
200
°
C
J
T
v
200
_
C; T
may be calculated from the data in
J(pk)
J(pk)
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
Figure 4.
At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.2
0.1
d
c
@T =
25
°
C (SINGLE PULSE)
C
0.05
10
20
30
50
70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5.
500
3000
2000
T =
25
°
C
C
T =
25
°
C
J
V
= 3.0 V
CE
= 5.0 A
300
200
I
1000
C
500
C
ib
C
200
100
ob
100
70
50
30
50
0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
1.0
2.0
5.0
10
20
50 100
200
500 1000
V ,
REVERSE VOLTAGE (VOLTS)
R
f, FREQUENCY (kHz)
Figure 7. Capacitance
Figure 6. Small
−
Signal Current Gain
3
2N6052
20,000
10,000
V
CE
= 3.0 V
T =
150
°
C
J
5000
3000
2000
25
°
C
-ꢂ55
°
C
1000
500
300
200
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
50
20
I ,
COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
3.0
2.6
2.2
1.8
1.4
1.0
T =
25
°
C
J
I
C
= 3.0 A
6.0 A
9.0 A
12 A
0.5
1.0
2.0 3.0
5.0
10
20 30
I ,
BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
3.0
2.5
2.0
T =
25
°
C
J
V
@ I
/I =
250
C B
BE(sat)
1.5
1.0
0.5
V
@ V
= 3.0 V
CE
BE
V
@ I
/I =
250
C B
CE(sat)
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I ,
COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
DATE 05/18/1988
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
N
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPL
Y
.
C
SEATING
PLANE
−T−
E
INCHES
DIM MIN
MAX
1.550 REF
MILLIMETERS
K
D
2 PL
MIN
MAX
A
B
C
D
E
G
H
K
L
39.37 REF
M
M
M
Y
0.13 (0.005)
T Q
—
0.250
0.038
0.055
1.050
—
6.35
0.97
1.40
26.67
8.51
1.09
1.77
0.335
0.043
0.070
U
−Y−
L
V
H
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
2
1
B
G
N
Q
U
V
—
0.151
0.830
0.165
—
3.84
21.08
4.19
1.187 BSC
30.15 BSC
0.131
0.188
3.33
4.77
−Q−
0.13 (0.005)
M
M
T Y
STYLE 1:
PIN 1.
BASE
2. EMITTER
CASE: COLLECTOR
STYLE 2:
PIN 1.
BASE
2. COLLECTOR
CASE: EMITTER
STYLE 3:
PIN 1.
GATE
2. SOURCE
CASE: DRAIN
STYLE 4:
PIN 1.
GROUND
2. INPUT
STYLE 5:
PIN 1.
CATHODE
2. EXTERNAL
TRIP/DELAY
CASE: ANODE
CASE: OUTPUT
STYLE 6:
PIN 1.
GATE
2. EMITTER
CASE: COLLECTOR
STYLE 7:
STYLE 8:
STYLE 9:
PIN 1.
ANODE
2. OPEN
CASE: CATHODE
PIN 1.
CATHODE #1
2. CATHODE
#2
CASE: ANODE
PIN 1.
ANODE #1
2. ANODE
#2
CASE: CATHODE
ON Semiconductor
and
are trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes
without further notice to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time.
All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer.
©
Semiconductor Components Industries, LLC, 2000
1
Case Outline Number:
January, 2000 − Rev. 07Z
1
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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