onsemi-2N6395G
| Part # | onsemi-2N6395G |
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2N6394 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
•
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Blocking
V
o
ltage to 800 V
•
These are Pb
−
Free Devices
G
†
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
A
K
Rating
Symbol
Value
Unit
V
V
DRM,
RRM
(T =
−
40 to 125
°
C, Sine Wave,
V
MARKING
DIAGRAM
J
50 to 60 Hz, Gate Open)
2N6394
2N6395
2N6397
2N6399
50
100
400
800
4
On-State RMS Current
I
12
A
A
T(RMS)
(180
°
Conduction Angles; T
= 90
°
C)
C
TO
−
220AB
CASE 221A
STYLE 3
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
= 90
°
C)
I
100
2N639xG
AYWW
TSM
J
2
2
Circuit Fusing (t = 8.3 ms)
I t
40
20
A s
1
Forward Peak Gate Power
P
W
W
A
GM
2
(Pulse Width
≤
1.0
m
s, T
= 90
°
C)
C
3
Forward Average Gate Power
P
0.5
2.0
G(AV)
2N639x = Device Code
x = 4, 5, 7, or 9
(t = 8.3 ms, T
= 90
°
C)
C
Forward Peak Gate Current
I
GM
G
A
Y
WW
= Pb
−
Free Package
= Assembly Location
=
Y
e
ar
(Pulse Width
≤
1.0
m
s, T
= 90
°
C)
C
Operating Junction
T
e
mperature Range
T
J
−
40 to +125
−
40 to +150
°
C
°
C
= Work Week
Storage
T
e
mperature Range
†
T
stg
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
PIN ASSIGNMENT
Cathode
Rating
Symbol
Max
2.0
Unit
°
C/W
°
C
1
Thermal Resistance, Junction
−
to
−
Case
R
q
JC
2
3
4
Anode
Maximum Lead
T
e
mperature for Soldering
Purposes 1/8
″
from Case for 10 Seconds
T
L
260
Gate
Anode
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
1. V
and V
for all types can be applied on a continuous basis. Ratings
DRM
RRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
September, 2012
−
Rev. 9
2N6394/D
2N6394 Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
†Peak Repetitive Forward or Reverse Blocking Current
I
, I
DRM RRM
(V =
Rated V
or V
, Gate Open)
T =
25
°
C
J
J
AK
DRM
RRM
−
−
−
−
10
2.0
m
A
mA
T =
125
°
C
ON CHARACTERISTICS
V
−
−
1.7
5.0
0.7
−
2.2
30
1.5
−
V
mA
V
TM
TM
†Gate Trigger Current (Continuous dc) (V
= 12 Vdc, R
= 100 Ohms)
I
D
L
GT
†
G
ate Trigger Voltage (Continuous dc) (V
= 12 Vdc, R
= 100 Ohms)
V
−
D
L
GT
Gate Non
−
Trigger Voltage (V
= 12 Vdc, R
= 100 Ohms, T
= 125
°
C)
V
GD
0.2
−
V
D
L
J
†
H
olding Current (V
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
I
6.0
1.0
50
2.0
mA
m
s
m
s
D
H
Turn-On Time (I
= 12 A, I
= 40 mAdc, V
= Rated V
)
t
−
TM
GT
D
DRM
gt
Turn-Off Time (V
= Rated V
)
(I =
12 A, I
= 12 A)
t
q
−
−
15
35
−
−
D
DRM
TM
R
(I =
12 A, I
= 12 A, T
= 125
°
C)
TM
R
J
DYNAMIC CHARACTERISTICS
Critical Rate
−
of
−
Rise of Off-State Voltage Exponential
dv/dt
−
50
−
V/
m
s
(V =
Rated V
, T
= 125
°
C)
J
D
DRM
†Indicates JEDEC Registered Data
2. Pulse
T
e
st: Pulse Width
≤
300
m
sec, Duty Cycle
≤
2%.
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
on state
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
I
H
I
I
at V
RRM
RRM
V
RRM
RRM
I
+ Voltage
V
TM
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
I
H
Holding Current
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
20
18
130
125
16
α
α
180
°
120
115
110
105
100
dc
α
= CONDUCTION ANGLE
α
= CONDUCTION ANGLE
14
90
°
12
60
°
α
= 30
°
10
8.0
6.0
4.0
dc
T
≈
125
°
C
J
60
°
α
= 30
°
95
90
2.0
0
90
°
180
°
7.0
0
1.0
2.0
3.0
4.0
5.0
6.0
8.0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0 8.0
I ,
AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
T(AV)
I ,
AVERAGE ON‐STATE CURRENT (AMPS)
T(AV)
Figure 1. Current Derating
Figure 2. Maximum On
−
State Power Dissipation
2
2N6394 Series
100
70
T =
25
°
C
J
125
°
C
50
30
20
10
7.0
5.0
3.0
2.0
100
95
1 CYCLE
1.0
0.7
0.5
90
85
80
75
70
65
60
0.3
0.2
T =
125
°
C
J
f = 60 Hz
SURGE IS PRECEDED AND
55
50
FOLLOWED BY RATED CURRENT
0.1
1.0
2.0
3.0
4.0
6.0
8.0 10
0.4
1.2
v
2.0
2.8
3.6
4.4
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
5.2
6.0
NUMBER OF CYCLES
TH
Figure 3. On
−
State Characteristics
Figure 4. Maximum Non
−
Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
Z
= R
JC
•
r(t)
q
q
JC(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1.0 k
2.0 k
3.0 k
5.0 k
10
t, TIME (ms)
Figure 5. Thermal Response
3
2N6394 Series
TYPICAL CHARACTERISTICS
300
200
3.0
OFF‐STATE VOLTAGE = 12 V
OFF‐STATE VOLTAGE = 12 V
2.0
100
70
50
1.0
0.7
0.5
30
20
T =
-40
°
C
J
25
°
C
10
7.0
5.0
100
°
C
3.0
0.3
0.2
0.5 1.0
2.0
5.0
10
20
50 100
200
-40 -20
0
20
40
60
80
100 120 140
160
PULSE WIDTH (
m
s)
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 6. Typical Gate Trigger Current
versus Pulse Width
Figure 7. Typical Gate Trigger Current
versus Temperature
1.1
1.0
0.9
0.8
0.7
0.6
30
20
OFF‐STATE VOLTAGE = 12 V
OFF‐STATE VOLTAGE = 12 V
10
7.0
5.0
0.5
0.4
3.0
-60 -40
-20
0
20
40
60
80
100 120 140
-60 -40
-20
0
20
40
60
80
100 120
140
T , JUNCTION TEMPERATURE (
°
C)
J
T , JUNCTION TEMPERATURE (
°
C)
J
Figure 8. Typical Gate Trigger Voltage
versus Temperature
Figure 9. Typical Holding Current
versus Temperature
ORDERING INFORMATION
Device
Package
Shipping
**
500 Units / Bulk
50 Units / Rail
500 Units / Bulk
500 Units / Bulk
50 Units / Rail
500 Units / Bulk
50 Units / Rail
2N6394G
2N6394TG
2N6395G
2N6397G
2N6397TG
2N6399G
2N6399TG
TO
−
220AB
(Pb
−
Free)
**For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
4
2N6394 Series
PACKAGE DIMENSIONS
TO
−
220AB
CASE 221A
−
07
ISSUE AA
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−
T
−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN
MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
—
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
—
Q
A
K
0.405
0.190
0.035
0.147
0.105
0.155
0.022
9.66
4.07
0.64
3.61
2.42
2.80
0.36
1
2
U
H
G
H
J
Z
K
L
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
—
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
—
N
Q
R
S
T
R
J
L
V
G
U
V
Z
D
0.080
2.04
N
STYLE 3:
PIN 1.
CATHODE
2. ANODE
3. GATE
4. ANODE
ON Semiconductor
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−
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and actual performance may vary over time.
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T
:
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−
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o
ll Free
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−
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o
ll Free USA/Canada
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−
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−
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o
ll Free USA/Canada
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For additional information, please contact your local
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2N6394/D
