onsemi-2N6518TA
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2N6518
High Voltage Transistor
•
•
•
Collector-Emitter Voltage: V
= -250V
CEO
Collector Dissipation: P
(max)=625mW
C
Complement to 2N6515
TO-92
1. Emitter
2. Base
3. Collector
1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T =25
°
C unless otherwise noted
a
Symbol
Parameter
Value
-250
-250
-5
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
V
CEO
EBO
V
I
I
-500
-250
625
mA
mA
mW
mW/
°
C
°
C
C
Base Current
B
P
Collector Power Dissipation
Derate above 25
°
C
C
5
T
T
Junction
T
e
mperature
150
J
Storage
T
e
mperature
-55 ~ 150
°
C
STG
•
Refer to 2N6520 for graphs
Electrical Characteristics
T =25
°
C unless otherwise noted
a
Symbol
Parameter
* Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
Min.
-250
-250
-5
Max.
Units
BV
I =
-100
µ
A, I
=0
V
V
CBO
CEO
EBO
C
E
BV
BV
I =
-1mA, I
=0
C B
I =
-10
µ
A, I
=0
V
E
C
I
I
V
= -150V, I
=0
-50
-50
nA
nA
CBO
CB
E
Emitter Cut-off Current
V
= -4V, I
=0
EB C
EBO
h
* DC Current Gain
V
V
V
V
V
= -10V, I
= -1mA
35
50
50
45
25
FE
CE
CE
CE
CE
CE
C
= -10V, I
= -10mA
C
= -10V, I
= -30mA
300
220
C
= -10V, I
= -50mA
C
= -10V, I
= -100mA
C
V
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I =
-10mA, I
= -1mA
-0.30
-0.35
-0.50
-1
V
V
V
V
CE
C
B
I =
-20mA, I
= -2mA
C
B
I =
-30mA, I
= -3mA
C
B
I =
-50mA, I
= -5mA
C
B
V
V
(sat)
(on)
I =
-10mA, I
= -1mA
-0.75
-0.85
-0.90
V
V
V
BE
BE
C
B
I =
-20mA, I
= -2mA
C
B
I =
-30mA, I
= -3mA
C
B
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
V
= -10V, I
= -100mA
-2
200
6
V
MHz
pF
CE
CE
CB
C
f
V
V
V
V
= -20V, I
= -10mA, f=20MHz
40
T
C
C
C
= -20V, I
=0, f=1MHz
E
ob
Emitter-Base Capacitance
Turn On Time
= -0.5
V
, I
=
0, f=1MHz
100
200
pF
EB
EB
C
t
(off)= -2V, V
= -100V
ns
ON
BE
CC
I =
-50mA, I
= -10mA
C
B1
t
Turn Off Time
V
= -100V, I
= -50mA
3.5
ns
OFF
CC
C
I
=I =10mA
B1 B2
* Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46
±
0.10
+0.10
–0.05
1.27TYP
1.27TYP
0.38
[1.27
±
0.20
]
[1.27
±
0.20
]
3.60
±
0.20
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
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™ FRFET™
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FACT Quiet series™
ISOPLANAR™
POP™
Stealth™
FAST
®
LittleFET™
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MicroPak™
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®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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QS™
EcoSPARK™
E
2
CMOS™
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Across the board. Around the world.™
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I
2
C™
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®
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RapidConfigure™
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®
SILENT SWITCHER
®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
