onsemi-2N7002D87Z
| Part # | onsemi-2N7002D87Z |
Download  | onsemi-2N7002D87Z |
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
High density cell design for low R
DS(ON)
.
These N-Channel
enhancement mode field effect transistors
are produced using Fairchild’s proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
G
D
G
S
TO-92
2N7000
S
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
2N7000
2N7002
60
NDS7002A
Symbol
Parameter
Units
V
DSS
Drain-Source Voltage
V
V
60
V
DGR
V
GSS
Drain-Gate Voltage (R
GS
< 1 M
W
)
Gate-Source Voltage – Continuous
V
±
20
– Non Repetitive (tp < 50µs)
±
40
115
800
200
1.6
I
D
Maximum Drain Current – Continuous
– Pulsed
200
500
400
3.2
280
1500
mA
P
D
Maximum Power Dissipation
Derated above 25
o
C
300
mW
mW/°C
°C
2.4
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-55 to 150
-65 to 150
Maximum Lead Temperature for
Soldering
Purposes, 1/16″ from Case for 10 Seconds
300
625
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
312.5
417
°C/W
R
JA
q
© 1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev. A1
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
OFF CHARACTERISTICS
All
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 10 µA
Zero Gate Voltage
Drain Current
V
DS
= 48 V, V
GS
= 0 V
60
V
2N7000
1
1
µA
mA
µA
mA
nA
nA
T
J
=125°C
T
J
=125°C
2N7002
NDS7002A
V
DS
= 60 V, V
GS
= 0 V
1
0.5
10
100
2N7000
I
GSSF
Gate – Body Leakage, Forward
Gate – Body Leakage, Reverse
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
2N7002
NDS7002A
2N7000
I
GSSR
V
GS
= -15 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
-10
nA
nA
2N7002
NDS7002A
-100
ON CHARACTERISTICS
(Note 1)
2N7000
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
0.8
1
2.1
2.1
3
V
2N7002
NDS7002A
2.5
2N7000
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 500 mA
1.2
1.9
1.8
1.2
1.7
1.7
2.4
1.2
2
5
9
W
T
J
=125°C
V
GS
= 4.5 V, I
D
= 75 mA
V
GS
= 10 V, I
D
= 500 mA
5.3
7.5
13.5
7.5
13.5
2
2N7002
T
J
=100°C
T
J
=100C
T
J
=125°C
T
J
=125°C
V
GS
= 5.0 V, I
D
= 50 mA
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 5.0 V, I
D
= 50 mA
NDS7002
A
3.5
3
1.7
2.8
0.6
0.14
0.6
0.09
0.6
0.09
5
2N7000
2N7002
V
DS(ON)
Drain-Source On-Voltage
V
GS
= 10 V,
I
D
= 500 mA
V
GS
= 4.5 V,
I
D
= 75 mA
V
GS
= 10 V,
I
D
= 500mA
V
GS
= 5.0 V,
I
D
= 50 mA
V
GS
= 10 V,
I
D
= 500mA
V
GS
= 5.0 V,
I
D
= 50 mA
2.5
0.4
3.75
1.5
1
V
NDS7002A
0.15
2N7000.SAM Rev. A1
Electrical Characteristics
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
ON CHARACTERISTICS
Continued
(Note 1)
2N7000
2N7002
I
D(ON)
On-State Drain Current
V
GS
= 4.5 V,
V
DS
= 10 V
V
GS
= 10 V,
V
DS
> 2
V
DS(on)
V
GS
= 10 V,
V
DS
> 2
V
DS(on)
V
DS
= 10 V, I
D
= 200 mA
V
DS
> 2
V
DS(on)
, I
D
= 200 mA
V
DS
> 2
V
DS(on)
, I
D
= 200 mA
75
500
500
100
80
600
2700
2700
320
mA
NDS7002A
2N7000
g
FS
Forward Transconductance
mS
2N7002
320
NDS7002A
80
320
DYNAMIC CHARACTERISTICS
All
All
C
iss
C
oss
C
rss
t
on
Input Capacitance
V
DS
= 25 V,
V
GS
= 0 V,
f =
1.0 MHz
20
11
4
50
25
5
pF
pF
pF
ns
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
All
2N7000
10
V
DD
= 15 V, R
L
= 25
W
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
2
2N700
20
V
DD
= 30 V, R
L
= 150
W
,
I
D
= 200 mA, V
GS
= 10 V,
NDS7002A
R
GEN
= 25
W
2N7000
t
off
Turn-Off Time
10
20
ns
V
DD
= 15 V, R
L
= 25
W
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
2
2N700
V
DD
= 30 V, R
L
= 150
W
,
I
D
= 200 mA, V
GS
= 10 V,
NDS7002
A
R
GEN
= 25
W
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
2N7002
NDS7002A
2N7002
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
115
280
0.8
1.5
1.5
1.2
mA
A
I
SM
NDS7002A
2N7002
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 115 mA
(Note 1)
V
GS
= 0 V,
I
S
= 400 mA
(Note 1)
0.88
0.88
V
NDS7002
A
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
1
.
5
1
3
2
.
5
2
V
GS
= 10V
V
GS
=
4
.
0
V
9.0
8.0
4
.
5
5
.
0
7.0
6
.
0
6.0
7
.
0
8
.
0
5.0
1
.
5
1
9
.
0
10
0
.
5
0
4.0
3.0
0
.
5
0
1
2
3
4
5
0
0
.
4
0
.
8
1
.
2
1
.
6
2
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DR
A
I
N CURRENT (A)
DS
D
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
3
V
GS
= 10V
V
GS
= 10V
1.75
1.5
2.5
2
I
D
= 500mA
T
=
1
25°C
J
1.25
1
1.5
1
25°C
-55°C
0.75
0.5
0
0.5
–
5
0
–
2
5
0
T
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2
, JUNCTION TEMPERATURE (°C)
J
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
2
1.6
1.2
0.8
0.4
0
1
.
1
T
= -55°C
J
V
DS
=
1
0V
25°C
V
DS
= V
GS
I
D
= 1
m
A
125°C
1
.
0
5
1
0
.
9
5
0
.
9
0
.
8
5
0
.
8
-50
-25
0
T
25
50
75
100
125
150
0
2
4
6
8
10
, JUNCTION T
E
M
PER
A
TURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
2N7000.SAM Rev. A1
Typical Electrical Characteristics
(continued)
2N7000 / 2N7002 /NDS7002A
1.1
1.075
1.05
1.025
1
2
1
I
D
= 250µA
V
GS
=
0
V
0
.
5
T
=
1
25°C
J
0
.
1
25°C
0
.
0
5
–
5
5°C
0.975
0.95
0.925
0
.
0
1
0
.
0
05
0
.
0
01
-50
-25
0
T
25
50
75
100
125
150
0
.
2
0
.
4
V
0
.
6
0
.
8
1
1
.
2
1
.
4
, JUNCTION TE
M
P
ERATURE (°C)
J
, BODY DIODE FOR
W
ARD VOLTAGE
(
V)
SD
Figure 8.
Body Diode Forward Voltage Variation with
Figure 7. Breakdown Voltage Variation
with Temperature
60
40
10
V
DS
=
2
5V
C
iss
8
20
10
5
C
oss
6
I
D
=
500m A
4
C
rss
f = 1
M
Hz
V
GS
= 0V
2
280m A
2
1
115m A
0
1
2
3
5
10
20
30
50
0
0
.
4
0
.
8
1
.
2
1
.
6
2
V
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE
C
H
ARGE (nC)
DS
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
t
on
t
off
V
DD
t
d(off)
r
t
t
f
t
d(on)
90%
90%
R
L
V
IN
D
V
OUT
Output, V
Input, V
out
10%
90%
10%
V
GS
Inverted
R
GEN
DUT
G
50%
in
50%
10%
S
Pulse Width
Figure 11.
Figure 12. Switching Waveforms
2N7000.SAM Rev. A1
Typical Electrical Characteristics
(continued)
3
2
3
2
1
1
0.5
0.5
0.1
0.1
0.05
0.05
V
GS
= 10V
V
GS
= 10V
SINGLE PULSE
T
A
= 25°C
SINGLE PULSE
T
A
= 25°C
0.01
0.01
0.005
0.005
1
2
5
10
20
30
60 80
1
2
5
10
20
30
60 80
V
, DRAIN-SOURCE VOLTAGE (V)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
DS
Figure 13. 2N7000 Maximum
Safe Operating Area
Figure 14. 2N7002 Maximum
Safe Operating Area
3
2
1
0.5
0.1
0.05
V
GS
= 10V
SINGLE PULSE
T
A
= 25°C
0.01
0.005
1
2
5
10
20
30
60 80
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 15. NDS7000A Maximum
Safe Operating Area
1
D =
0
.
5
0
.
2
0.5
R
(t) = r(t)
*
R
q
JA
q
JA
R
= (See Datasheet)
0.2
0.1
q
JA
0.1
P(pk)
0.05
t
1
0.05
t
2
0.02
T
– T
= P
* R
(t)
0.01
J
A
q
JA
Single
P
ulse
0.02
0.01
Duty Cycle, D = t
1
/
t
2
0.0001
0.001
0.01
0.1
t ,
TIME (sec)
1
10
100
300
1
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
1
D = 0.5
0
.
2
0.1
0
.
0
5
0
.
0
2
0
.
0
1
0.5
0.2
0.1
R
(t) = r(t)
* R
q
JA
q
JA
= (See Datasheet)
R
q
JA
0.05
P(pk)
t
1
0.01
t
2
Single
P
ulse
T
– T
= P
* R
(t)
J
A
q
JA
Duty Cycle, D = t
1
/
t
2
0.002
0.001
0.0001
0.001
0.01
0.1
t ,
TIME (sec)
1
10
100
300
1
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve
2N7000.SAM Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT
™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE T
O
A
NY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NO
T
A
SSUM
E
A
NY LIABILIT
Y
A
RISING OUT OF TH
E
A
PPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
