onsemi-2N7002KW
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2N7002KW
N-Channel Enhancement
Mode Field Effect
Transistor
Features
•
Low On
−
Resistance
•
Low Gate Threshold
V
o
ltage
•
Low Input Capacitance
D
•
Fast Switching Speed
S
•
Low Input/Output Leakage
•
Ultra
−
Small Surface Mount Package
•
These Devices are Pb
−
Free and are RoHS Compliant
•
ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V
as per JESD22 C101
G
SC
−
70
3 LEAD
CASE 419AB
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Rating
Drain
−
Source Voltage
Symbol
Value
60
Unit
V
7KW
V
DSS
GSS
Gate
−
Source Voltage
V
20
V
7KW = Specific Device Marking
D
Maximum Drain Current
Continuous
I
310
195
1.2
mA
mA
A
D
T =
100
°
C
J
Pulsed
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
T
−
55 to
+150
°
C
J
T
−
55 to
+150
°
C
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G
S
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
†
T
o
tal Device Dissipation
P
300
2.4
mW
D
Derating above T
= 25
°
C
mW/
°
C
A
†
Device
2N7002KW
Package
Shipping
Thermal Resistance,
Junction to Ambient*
R
410
°
C/W
q
JA
SC
−
70
3000 /
T
a
pe &
Reel
*Device mounted on FR
−
4 PCB, 1
″
x 0.85
″
x 0.062
″
. Minimum land pad size
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
May, 2018
−
Rev. 1
2N7002KW/D
2N7002KW
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain
−
Source Breakdown Voltage
V
= 0
V
, I
=
1
0
m
A
60
−
−
−
V
DSS
GS
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
= 60
V
, V
= 0 V
−
1.0
0.5
m
A
mA
DSS
GS
= 60
V
, V
= 0 V, T
= 125
°
C
GS
J
I
Gate
−
Body Leakage
V
DS
= 0
V
, V
=
GS
20 V
−
−
10
m
A
GSS
V
Gate Threshold Voltage
V
= V
, I
= 250
m
A
1.1
−
−
2.1
V
GS(th)
DS(on)
DS
GS
D
R
Static Drain
−
Source On
−
Resistance
V
GS
V
GS
V
GS
V
GS
= 10
V
, I
= 500 mA
−
1.6
2.4
2
W
D
= 10
V
, I
= 500 mA, T
= 100
°
C
D
J
= 5
V
, I
= 50 mA
D
= 5
V
, I
= 50 mA, T
= 100
°
C
3
D
J
V
DS(on)
Drain
−
Source On
−
Voltage
V
GS
V
GS
= 10
V
, I
= 500 mA
−
−
3.75
1.5
V
D
= 5
V
, I
= 50 mA
D
I
On
−
State Drain Current
V
GS
V
DS
= 10
V
, V
= 2 V
500
80
−
−
−
−
mA
mS
D(on)
DS
g
FS
Forward Transconductance
= 2
V
, I
=
0
.2 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25
V
, V
= 0 V, f =
1
.0 MHz
−
−
−
−
−
−
50
25
5
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-Off Delay Time
V
D
= 30
V
, R
= 150
W
, V
= 10
V
,
−
−
−
−
20
60
ns
ns
d(on)
d(off)
DD
L
GS
I
= 200 mA, R
= 25
W
GEN
t
DRAIN
−
SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain
−
Source Diode Forward Current
Maximum Pulsed Drain
−
Source Diode Forward Current
−
−
−
−
−
−
115
0.8
1.1
mA
A
S
I
SM
V
SD
Drain
−
Source Diode Forward Voltage
V
GS
= 0
V
, I
= 115 mA
V
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse
T
e
st: Pulse Width < 300
m
s, Duty Cycle < 2.0%.
2
2N7002KW
TYPICAL PERFORMANCE CHARACTERISTICS
2.2
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
V
GS
= 10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
9V
8V
6V
5V
V
GS
= 10V
7V
I
D
= 500mA
V
GS
= 5V
I
D
= 50mA
4V
V
GS
= 3V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
−
50
0
50
100
150
T
J
. Junction Temperature (
o
C)
V
DS
. Drain
−
Source Voltage (V)
Figure 1. On
−
Region Characteristics
Figure 2. On
−
Resistance Variation with
Temperature
3.0
2.5
2.0
1.5
1.0
0.5
5
4
3
2
1
0
V
GS
= 4V
4.5V
V
GS
= 10V
V
GS
= 7V
5V
6V
T
A
= 12
5
o
C
T
A
= 25
o
C
10V
9V
8V
T
A
=
−
5
5
o
C
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
I
D
. Drain
−
Source Current(A)
I
D
. Drain Current (A)
Figure 3. On
−
Resistance Variation with Gate
Figure 4. On
−
Resistance Variation with Drain
Voltage and Drain Current
Current and Temperature
1.10
3.5
V
DS
=
V
GS
V
DS
= 10V
T
A
=
−
55(
o
C)
1.05
1.00
0.95
0.90
0.85
0.80
0.75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
A
= 25(
o
C)
I
D
= 1mA
T
A
= 125
(
o
C)
I
D
= 0.25mA
−
25
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
V
G
S
. Gate
−
Source Voltage (V)
T
J
. Junction Temperature (
o
C)
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
3
2N7002KW
TYPICAL PERFORMANCE CHARACTERISTICS
10000
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
V
GS
= 0 V
I
D
=250uA
1000
100
T
A
=125
o
C
10
T
A
=25
o
C
1
T
A
=
−
55
o
C
0.1
−
25
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
, Junction Temperatture(
o
C)
V
. Body Diode Forward Voltage [V]
SD
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage
Variation with Source Current and
Temperature
100
10
1
10
V
DS
= 25V
8
6
4
2
0
C
ISS
I
D
= 500mA
C
OSS
C
RSS
I
D
= 115mA
0.2
f = 1MHZ
I
D
= 280mA
V
GS
= 0V
1
10
100
0.0
0.4
0.6
0.8
1.0
V
D
S
. Drain to Source Voltage (V)
Qg. Gate Charge (nC)
Figure 9. Capacitance Variation
Figure 10. Gate Charge Characteristics
1
10
0
10
−
1
10
−
2
10
−
3
10
−
4
10
0
m
s
50%
20%
1ms
10ms
100ms
1S
Rthja(t)=r(t)*Rthja
Rthja=410
o
C/W
DC
R
DS(on)
Limit
0.1
10%
5%
Vgs=10V
2%
Single Pulse
Rthja=410
o
C/W
D=1%
T =
2
5
o
C
a
Single Pulse
0.01
10
−
1
10
0
10
1
10
2
1E
−
4
1E
−
3
0.01
0.1
1
10
100
1000
t1, time(sec)
V
D
S
, Drain
−
Source Voltage [V]
Figure 11. Maximum Safe Operating Area
Figure 12. Transient Thermal Response Curve
4
2N7002KW
PACKAGE DIMENSIONS
SC
−
70, 3 Lead, 1.25×2
CASE 419AB
−
01
ISSUE O
SYMBOL
MIN
NOM
MAX
D
0.80
A
1.10
A1
A2
0.00
0.80
0.10
1.00
0.90
b
c
0.15
0.08
1.80
1.80
1.15
0.30
0.22
2.20
2.40
1.35
D
E
2.00
2.10
E1
E
E1
e
1.25
0.65 BSC
0.36
L
0.26
0.46
e
e
L1
L2
0.42 REF
0.15 BSC
TOP VIEW
0º
4º
8º
θ
10º
θ1
q
1
A2
A1
A
q
L
b
L1
q
1
c
L2
SIDE VIEW
END VIEW
Notes:
(1) All
dimensions are in millimeters. Angles in degrees.
(2) Complies
with JEDEC MO-203.
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−
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2N7002KW/D
