onsemi-2N7002LT1G

Part #onsemi-2N7002LT1G
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onsemi-2N7002LT1G
2N7002L, 2V7002L  
Small Signal MOSFET  
60 V, 115 mA, N
−
Channel SOT
−
23  
Features  
•
2V Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC
−
Q101 Qualified and  
P
P
A
P Capable (2V7002L)  
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
7.5
W
@ 10
V
,  
60 V  
115 mA  
500 mA  
MAXIMUM RATINGS  
N
−
Channel  
Rating  
Drain
−
Source Voltage  
Symbol  
Value  
60  
Unit  
Vdc  
3
V
DSS  
DGR  
Drain
−
Gate Voltage (R
 
= 1.0 M
W
)  
V
60  
Vdc  
GS  
Drain Current  
−
Continuous T
 
= 25
°

−
Continuous
T =
 
100
°

I
I
ꢀ
115  
ꢀ
75  
ꢀ
800  
mAdc  
D
D
C
I
1
DM  
C
Gate
−
Source Voltage  
−
Continuous  
V
GSM  
ꢀ
20  
ꢀ
40  
Vdc  
Vpk  
GS  
2
V
−
Non
−
repetitive (t
 
≤
50
m
s)  
p
MARKING  
DIAGRAM  
3
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
1
T
o
tal Device Dissipation FR
−
5 Board  
P
D
2
702 M
G  
225  
1.8  
556  
mW  
mW/
°
C  
°
C/W  

(Note 3) T

= 25
°
C  
A
G
Derate above 25
°
C  
Thermal Resistance, Junction
−
to
−
Ambient  
SOT
−
23  
CASE 318  
STYLE 21  
R
q
JA  
1
T
o
tal Device Dissipation  
P
D
300  
2.4  
mW  
mW/
°
C  
°
C/W  
Derate above 25
°
C  
Thermal Resistance, Junction
−
to
−
Ambient  
702  
M
= Device Code  
= Date Code*  
= Pb
−
Free Package  
A
R
417  
q
JA  
G
(Note: Microdot may be in either location)  
Junction and Storage
T
e
mperature  
T , T  
J
−
ꢀ
55 to  
+150  
°
C  
stg  
*Date Code orientation and/or position may  
vary depending upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The
 
Power Dissipation of the package may result in a lower continuous drain  
current.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
2N7002LT1G  
2N7002LT3G  
2V7002
L
T
1G  
3000
T
a
pe & Reel  
10,000
T
a
pe & Reel  
3000
T
a
pe & Reel  
2. Pulse
 
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.  
SOT
−
23  
(Pb
−
Free)  
3. FR
−
5 = 1.0 x 0.75 x 0.062 in.  
4. Alumina
 
= 0.4 x 0.3 x 0.025 in 99.5% alumina.  
SOT
−
23  
(Pb
−
Free)  
2V7002LT3G  
2N7002LT1H*  
10,000
T
a
pe & Reel  
3000
T
a
pe & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our
T
a
pe and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*Not for new design.  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
April, 2013
−
Rev. 7  
2N7002L/D  
 

2N7002L, 2V7002L  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain
−
Source Breakdown Voltage  
V
60  
−
−
Vdc  
(BR)DSS  
(V =
 
0, I
 
= 10
m
Adc)  
GS  
D
Zero Gate Voltage Drain Current  
(V =
 
0, V
 
= 60 Vdc)  
T =
 
25
°
C  
J
I
−
−
−
−
1.0  
500  
m
Adc  
nAdc  
nAdc  
J
DSS  
T =
 
125
°
C  
GS  
DS  
Gate
−
Body Leakage Current, Forward  
I
−
−
100  
GSSF  
GSSR  
(V =
 
20 Vdc)  
GS  
Gate
−
Body Leakage Current, Reverse  
I
−
−
−
100  
(V =
 
−
ꢀ
20 Vdc)  
GS  
ON CHARACTERISTICS

Gate Threshold Voltage  
V
I
1.0  
−
−
2.5  
Vdc  
mA  
Vdc  
GS(th)  
(V =
 
V ,
 
I =
 
250
m
Adc)  
DS  
GS  
D
On
−
State Drain Current  
(V
≥
2.0 V
 
, V
 
= 10 Vdc)  
500  
−
D(on)  
DS  
DS(on) GS  
Static Drain
−
Source On
−
State Voltage  
(V =
 
10 Vdc, I
 
= 500 mAdc)  
V
DS(on)  
−
−
−
−
3.75  
0.375  
GS  
D
(V =
 
5.0 Vdc, I
 
= 50 mAdc)  
GS  
D
Static Drain
−
Source On
−
State Resistance  
(V =
 
10
V
, I
 
=
5
00 mAdc)  
r
Ohms  
mS  
DS(on)  
T =
 
25
°
C  
C
−
−
−
−
−
−
−
−
7.5  
13.5  
7.5  
GS  
D
T
= 125
°
C  
C
(V =
 
5.0 Vdc, I
 
= 50 mAdc)  
T =
 
25
°
C  
C
GS  
D
T
C
= 125
°
C  
13.5  
Forward Transconductance  
(V
≥
2.0 V
 
, I
 
= 200 mAdc)  
g
FS  
80  
−
−
DS  
DS(on)  
D
DYNAMIC CHARACTERISTICS  
Input Capacitance  
C
−
−
−
−
−
−
50  
25  
pF  
pF  
pF  
iss  
(V =
 
25 Vdc, V
 
= 0, f = 1.0 MHz)  
DS  
GS  
Output Capacitance  
C
oss  
(V =
 
25 Vdc, V
 
= 0, f = 1.0 MHz)  
DS  
GS  
Reverse Transfer Capacitance  
(V =
 
25 Vdc, V
 
= 0, f = 1.0 MHz)  
C
5.0  
rss  
DS  
GS  
SWITCHING CHARACTERISTICS

Turn
−
On Delay Time  
t
−
−
−
−
20  
40  
ns  
ns  
d(on)  
(V =
 
25 Vdc, I
 
^
500 mAdc,  
DD  
D
R
= 25
W
, R
 
= 50
W
, V  
= 10 V)  
G
L
gen  
Turn
−
Off Delay Time  
t
d(off)  
BODY
−
DRAIN DIODE RATINGS  
Diode Forward On
−
Voltage  
V
−
−
−
−
−
−
−
1.5  
−
1
1
5  
−
800  
Vdc  
SD  
(I =
 
11.5 mAdc, V
 
= 0 V)  
S
GS  
Source Current Continuous  
(Body Diode)  
I
mAdc  
mAdc  
S
Source Current Pulsed  
I
SM  
5. Pulse
 
T
e
st: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.  
2
 

2N7002L, 2V7002L  
TYPICAL ELECTRICAL CHARACTERISTICS  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
V
= 10 V  
T =
 
25
°
C  
DS  
A
25
°
C  
-ꢀ55
°
C  
0.8  
0.6  
0.4  
0.2  
V
= 10 V  
9 V  
GS  
125
°
C  
8 V  
7 V  
6 V  
5 V  
4 V  
3 V  
0
1.0 2.0 3.0 4.0
 
5.0  
6.0  
7.0 8.0 9.0 10  
0
1.0 2.0 3.0 4.0  
5.0  
6.0 7.0 8.0  
9.0 10  
V
DS  
, DRAIN SOURCE VOLTAGE (VOLTS)  
V ,
 
GATE SOURCE VOLTAGE (VOLTS)  
GS  
Figure 1. Ohmic Region  
Figure 2. Transfer Characteristics  
2.4  
1.2  
1.05  
1.1  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
I
= V  
GS  
= 1.0 mA  
V
I
= 10 V  
DS  
GS  
= 200 mA  
D
D
1.10  
1.0  
0.95  
0.9  
0.85  
0.8  
0.75  
0.7  
-ꢀ60  
-ꢀ20  
+ꢀ20  
+ꢀ60  
+ꢀ100  
+ꢀ140  
-ꢀ60  
-ꢀ20  
+ꢀ20  
+ꢀ60  
+ꢀ100  
+ꢀ140  
T, TEMPERATURE (
°
C)  
T, TEMPERATURE (
°
C)  
Figure 3. Temperature versus Static  
Figure 4. Temperature versus Gate  
Threshold Voltage  
Drain
−
Source On
−
Resistance  
3

2N7002L, 2V7002L  
PACKAGE DIMENSIONS  
SOT
−
23 (TO
−
236)  
CASE 318
−
08  
ISSUE AP  
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING
 
DIMENSION: INCH.  
D
3. MAXIMUM
 
LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS
 
D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0
°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0
°  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10
°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10
°  
c
1
2
b
0.25  
e
q
H
A
E
q
L
STYLE 21:  
A1  
PIN 1.
 
GATE  
2. SOURCE  
3. DRAIN  
L1  
VIEW C  
SOLDERING FOOTPRINT  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
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and  
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limitation special, consequential or incidental damages.
 
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time.
 
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does not convey any license under its patent rights nor the rights of others.
 
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PUBLICATION ORDERING INFORMATION  
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2N7002L/D