onsemi-2SA1416T-TD-E
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Order
i
n
g number : EN2005C
2SA1416/2SC3646
Bipolar Transistor
(–)
–)
(
), (
sat PNP)NPN
Single PCP
100V, (
1A, Low V
CE
F
e
atures
•
Adoption of FBET, MBIT processes
•
•
•
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
( )
: 2SA1416
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
(-
–
)
1
20
(-
–
)
1
00
(-
–
)
6
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
(-
–
)
1
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
I
CP
(-
–
)
2
A
500
mW
W
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
P
C
When mounted on ceram
i
c
s
ubstrate
(
2
50mm
2
0.8mm)
1.3
×
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
150
C
°
°
T
s
tg
–
–
55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
Product &
Package
I
n
f
o
rmat
i
o
n
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity
: 1,000 pcs./reel
Top View
2S
A
1
416S-
T
D-E
2S
A
1
416
T
–
T
D-E
2SC3646S-
T
D-E
2SC3646
T
–
T
D-E
4.5
1.6
Pack
i
n
g
T
y
p
e:
T
D
1.5
TD
1
2
3
M
a
rk
i
n
g
0.4
0.5
0.4
1.5
3.0
RANK
RANK
2SA1416
2SC3646
2
0.75
El
e
ctr
i
c
al Connect
i
o
n
2
1 : Base
2 : Collector
3 : Emitter
1
1
Bottom View
3
3
PCP
2SA1416
2SC3646
Semiconductor Components Industries, LLC, 2013
September, 2013
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS
No.2005-1/7
2S
A
1
416 / 2SC3646
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=
(
–
–
)
1
00
V
, I
=
0A
(-
–
)
1
00
(-
–
)
1
00
400*
nA
nA
CBO
CB
V =
(
–
–
)
4
V
,
I
=
0A
EB
E
I
EBO
C
DC Current Ga
i
n
h
V
CE
=
(
–
–
)
5
V
, I
=
(
–
–
)
1
00mA
100*
FE
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
(
–
–
)
1
0
V
, I
=
(
–
–
)
1
00mA
120
(
1
3
)
8
.5
(-
–
0.2
)
0
.1
(-
–
)
0
.85
MHz
pF
V
T
CE C
Cob
V
CB
=
(
–
–
)
1
0
V
,
f
=1MHz
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-ON Time
V
(
s
at)
(
s
at)
I
C
=
(
–
–
)
4
00m
A
, I
=
(
–
–
)
4
0mA
(-
–
0.6
)
0
.4
(-
–
)
1
.2
CE
B
V
I
C
=
(
–
–
)
4
00m
A
, I
=
(
–
–
)
4
0mA
V
BE
B
V
I
C
=
(
–
–
)
1
0
A
,
I
=
0A
(-
–
)
1
20
(-
–
)
1
00
(-
–
)
6
V
μ
(
B
R
)
C
BO
E
V
I
C
=
(
–
–
)
1
m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =
(
–
–
)
1
0
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
(
8
0
)
8
0
(
7
00
)
8
50
(
4
0
)
5
0
ns
ns
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
stg
f
Fa
l
l Ti
m
e
: The 2SA1416 / 2SC3646 are classi
fi
ed by 100mA h
as follows :
*
FE
Rank
R
S
T
h
100 to 200
140 to 280
200 to 400
FE
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
PW=20
μ
s
D.C.
≤
1%
I
B2
INPUT
R
B
R
L
V
R
50
Ω
+
+
100
μ
F
470
μ
F
–
–
5V
50V
I =10I
=
–
–
10I =400mA
C
B1
B2
(For PN
P
,
t
he polarity is reversed)
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
2S
A
1
416S-
T
D-E
2S
A
1
416
T
–
T
D-E
2SC3646S-
T
D-E
2SC3646
T
–
T
D-E
Package
PCP
Sh
i
p
p
i
n
g
memo
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
PCP
Pb Free
PCP
PCP
No.2005-2/7
2S
A
1
416 / 2SC3646
I
— V
I
— V
C
CE
C
CE
–
–
1.0
–
–
0.8
–
–
0.6
–
–
0.4
–
–
0.2
0
1.0
2SC3646
2SA1416
0.8
0.6
0.4
0.2
0
1mA
I =0mA
B
I =0mA
B
0
0
0
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
0
0
0
7
1
2
3
4
5
Collector-to-Emitter
V
o
ltage, V
— V
Collector-to-Emitter
V
o
ltage, V
–
– V
ITR03527
CE
ITR03526
CE
I
C
— V
I
— V
CE
C
CE
500
400
300
200
100
0
–
–
500
–
–
400
–
–
300
–
–
200
–
–
100
0
2SC3646
2SA1416
0.5mA
I =0mA
B
40
— V
I =0mA
B
–
–
30
–
–
10
–
–
20
–
–
40
— V
–
–
50
ITR03528
10
20
30
50
ITR03529
Collector-to-Emitter
V
o
ltage, V
Collector-to-Emitter
V
o
ltage, V
CE
CE
I
C
— V
I
— V
BE
BE
C
–
–
1.2
–
–
1.0
–
–
0.8
–
–
0.6
–
–
0.4
–
–
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
2SA1416
=
–
–
5V
2SC3646
V
V
=5V
CE
CE
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
— V
ITR03530
–
–
1.2
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter
V
o
ltage, V
Base-to-Emitter
V
o
ltage, V
— V
ITR03531
BE
BE
h
— I
h
— I
FE
C
FE
C
1000
1000
2SA1416
2SC3646
7
5
7
5
V
=
–
–
5V
V
CE
=5V
CE
3
2
3
2
25
°
C
25
°
C
100
7
100
–
–
25
°
C
–
–
25
°
C
7
5
5
3
2
3
2
10
10
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1.0
2
3
7
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
ITR03532
Collector Current, I
–
– A
Collector Current, I
–
– A
ITR03533
C
C
No.2005-3/7
2S
A
1
416 / 2SC3646
Cob
–
– V
CB
f
— I
C
T
3
2
100
2SA1416 / 2SC3646
=10V
2SA1416 / 2SC3646
f=1MHz
7
5
V
CE
2SA1416
3
2
100
7
5
2SC3646
10
3
2
7
5
3
2
For PN
P
,
m
inus sign is omitted
For PN
P
,
m
inus sign is omitted
10
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
100
2
0.01
0.1
1.0
ITR03538
1.0
10
Collector-to-Base
V
o
ltage, V
— V
Collector Current, I
–
– A
ITR03539
CB
C
V
(sat)
–
– I
V
(sat)
–
– I
CE C
CE
C
–
–
1000
1000
2SA1416
2SC3646
7
5
7
I
/ I
=10
I
/ I
=10
B
C
B
C
5
3
2
3
2
–
–
100
100
7
5
7
5
–
–
25
°
C
C
25
°
–
–
25
°
C
3
2
3
2
25
°
C
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
7
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
1.0
ITR03536
ITR03537
Collector Current, I
–
– A
Collector Current, I
–
– A
C
C
V
(sat)
–
– I
V
(sat)
–
– I
BE
C
BE
C
–
–
10
10
2SA1416
2SC3646
7
5
7
5
I
/ I
=10
I
/ I
=10
C
B
C
B
3
2
3
2
–
–
1.0
1.0
7
5
7
5
25
°
C
75
°
C
25
°
C
75
°
C
3
3
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
7
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
1.0
Collector Current, I
–
– A
Collector Current, I
–
– A
ITR03534
ITR03535
C
C
A S O
P
C
— Ta
1.6
5
3
2
2SA1416 / 2SC3646
I
=2A
CP
1.4
1.3
1.2
I =1A
C
1.0
7
5
1.0
0.8
3
2
0.1
7
0.6
0.5
0.4
5
3
2
For PN
P
,
m
inus sign is omitted
2SA1416 / 2SC3646
0.2
0
0.01
Single pulse Ta=25
°
C
Mounted on a ceramic board (250mm
2
✕
0.8mm)
7
5
5
7
2
3
5
7
2
3
5
7
2
0
20
40
60
80
100
120
140
160
1.0
10
100
Collector-to-Emitter
V
o
ltage, V
— V
ITR03540
Ambient Temperature, Ta
–
–
°
C
ITR03541
CE
No.2005-4/7
2S
A
1
416 / 2SC3646
B
a
g Pack
i
n
g Spec
i
fi
c
at
i
o
n
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E
No.2005-5/7
2S
A
1
416 / 2SC3646
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No.2005-6/7
2S
A
1
416 / 2SC3646
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performance may vary over time. All operating parameters, including “Typicals”
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PS No.2005-7/7
