onsemi-2SA1450T-AA
| Part # | onsemi-2SA1450T-AA |
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Ordering number : EN2217B
S
A
N
Y
O
S
em
i
conductors
DATA S
HEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1450 / 2SC3708
Low-Frequency Driver Applications
Features
•
Adoption of FBET process.
•
AF amp, AF power amp.
•
High breakdown voltage : V
> 80
V
.
CEO
Specifications
( )
: 2SA1450
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
(
–
–
)100
(
–
–
)80
(
–
–
)5
CBO
CEO
EBO
V
V
I
I
I
(
–
–
)500
(
–
–
)800
(
–
–
)100
600
mA
mA
mA
mW
°
C
°
C
C
Collector Current (Pulse)
Base Current
CP
B
Collector Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
P
C
Tj
150
T
s
tg
–
–
55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
=(
–
–
)60
V
, I
=
0A
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
(
–
–
)0.1
(
–
–
)0.1
400*
μ
A
μ
A
CBO
CB
EB
CE
CE
E
=(
–
-)4V, I
=0A
EBO
C
h
h
1
2
=(
–
–
)5
V
, I
=
(
–
-)50mA
100*
60
FE
C
DC Current Gain
=(
–
–
)5
V
, I
=
(
–
-)400mA
FE
C
Continued on next page.
*
: The 2SA1450 / 2SC3708 are classified by 50mA h
as follws:
FE
Rank
R
S
T
h
FE
100 to 200
140 to 280
200 to 400
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
“standard application”, intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any “special application” (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
‘
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
‘
s products or
N2509CA TK IM / O3103TN (KT)/71598HA (KT)/D129MO/2197TA, TS No.2217-1/5
2SA1450 / 2SC3708
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
f
V
V
=(
–
-)10V, I
=(
–
–
)10mA
C
120
MHz
pF
V
T
CE
Output Capacitance
Cob
=(
–
-)10V, f=1MHz
(7)5
(
–
-0.2)0.16
(
–
–
)0.9
CB
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V
V
V
V
V
(sat)
(sat)
I
C
I
C
I
C
I
C
=(
–
–
)400mA, I
=(
–
–
)40mA
(
–
-)0.5
(
–
-)1.2
CE
B
=(
–
–
)400mA, I
=(
–
–
)40mA
V
BE
B
=(
–
–
)10
μ
A, I
=0A
(
–
–
)100
(
–
–
)80
(
–
–
)5
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(
–
–
)1mA, R
=
∞
BE
V
I =(
–
-)10
μ
A, I
=0A
E
V
C
Package Dimensions
unit : mm (typ)
7522-002
5.0
4.0
4.0
0.45
0.5
0.45
0.44
1
2 3
1 : Emitter
2 : Collector
3 : Base
1.3
1.3
SANYO : NP
I
— V
I
— V
C CE
C
CE
–
–
500
600
500
400
300
2SC3708
2SA1450
–
–
400
–
–
300
–
–
200
–
–
100
200
100
0
I =0
mA
B
I =0
mA
B
0.8
0
0
0.2
0.4
0.6
1.0
Collector-to-Emitter
V
o
ltage, V
–
– V
ITR03634
CE
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
ITR03633
Collector-to-Emitter
V
o
ltage, V
— V
CE
No.2217-2/5
2SA1450 / 2SC3708
I
— V
I
— V
C CE
C
CE
20
–
–
20
–
–
16
–
–
12
2SC3708
2SA1450
16
12
8
–
–
8
4
—
4
0
I =0
μ
A
I =0
μ
A
B
B
0
0
–
–
10
–
–
20
–
–
30
–
–
40
–
–
50
ITR03631
0
10
20
30
40
50
Collector-to-Emitter
V
o
ltage, V
–
– V
ITR03632
CE
Collector-to-Emitter
V
o
ltage, V
— V
CE
I
— V
I
— V
C
BE
C
BE
–
–
600
–
–
500
–
–
400
–
–
300
600
500
2SA1450
–
–
5V
2SC3708
V =5V
CE
V
=
CE
400
300
200
100
0
–
–
200
–
–
100
0
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03636
Base-to-Emitter
V
o
ltage, V
— V
ITR03635
Base-to-Emitter
V
o
ltage, V
— V
BE
BE
h
FE
— I
h
FE
— I
C
C
1000
1000
2SC3708
2SA1450
7
5
7
5
V
=5V
V
=
–
–
5V
CE
CE
°
C
Ta=75
3
2
3
2
25
°
C
°
C
–
–
25
100
100
7
7
5
5
3
2
3
2
10
5
10
2
3
3
3
2
5
2
5
2
3
5
2
3
5
2
3
5
5
7
–
–
1.0
7
–
–
10
7
–
–
100
7
–
–
1000
1.0
10
100
1000
ITR03639
ITR03640
Collector Current, I
–
–
m
A
Collector Current, I
–
–
m
A
C
C
f
— I
f
— I
C
T
C
T
1000
2SA1450
=
–
–
10V
2SC3708
7
V
V
=10V
CE
CE
3
2
5
3
2
100
7
100
7
5
5
3
2
3
2
10
–
–
1.0
10
2
3
5
7
2
3
5
7
2
3
5
2
3
5
2
3
5
2
3
5
–
–
10
–
–
100
7
–
–
1000
1.0
10
100
1000
Collector Current,
I
–
–
m
A
ITR03637
Collector Current,
I
–
–
m
A
ITR03638
C
C
No.2217-3/5
2SA1450 / 2SC3708
Cob
–
– V
Cob
–
– V
CB
CB
5
3
2SA1450
f=
1MHz
2SC3708
f=
1MHz
2
3
2
10
10
7
5
7
5
3
2
3
2
1.0
1.0
1.0
7
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
–
–
1.0
–
–
10
–
–
100
10
100
ITR03642
Collector-to-Base
V
o
ltage,
V
— V
Collector-to-Base
V
o
ltage,
V
— V
ITR03641
CB
CB
V
(sat)
–
– I
C
V
(sat)
–
– I
C
CE
CE
–
–
1.0
1.0
2SC3708
2SA1450
/ I
=
10
7
7
I
C
/ I
=
10
B
I
C
B
5
5
3
2
3
2
0.1
–
–
0.1
7
5
7
5
3
2
3
2
0.01
–
–
0.01
7
2
3
5
2
3
5
2
3
5 7
7
–
–
10
7
–
–
100
–
–
1000
ITR03643
2
3
5
2
3
5
2
3
5
–
–
1.0
1.0
10
100
1000
Collector Current, I
–
–
m
A
Collector Current, I
–
–
m
A
ITR03644
A S O
C
P
— Ta
C
C
1000
700
600
2SA1450 / 2SC3708
2SA1450 / 2SC3708
I
CP
=800mA
5
I =500mA
C
3
2
500
400
100
5
3
300
200
100
2
10
5
3
2
(For PN
P
,
m
inus sign is omitted.)
0
5
2
3
2
5
2
3
5
0
20
40
60
80
100
120
140
160
1.0
10
100
Collector-to-Emitter
V
o
ltage, V
— V
ITR03645
Ambient Temperature, Ta
–
–
°
C
ITR03646
CE
No.2217-4/5
2SA1450 / 2SC3708
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of November, 2009. Specifications and information herein are subject
to change without notice.
PS No.2217-5/5
