onsemi-2SA2012-TD-E

Order

i

n

g number : EN6306B  

2SA2012  

Bipolar Transistor  

–

–

( )  

sat PNP

 

Single PCP  

30V, 5A,

 

Low V  

CE  

A

p

p

l

i

c

a

i

t

ons  

•

Relay drivers, lamp drivers, motor drivers,

fl

ash  

F

e

atures  

•

•

•

•

•

Adoption of MBIT processes  

Large current capacity  

Low collector to emitter saturation voltage  

Ultrasmall-sized package permitting applied sets to be made small and slim  

High allowable power dissipation  

Spec

i

fi

c

at

i

o

ns  

A

b

so

l

u

te Maximum Rat

i

n

gs  

at Ta=25°C  

Pa

r

a

meter  

Co

l

l

e

ctor to Base

V

o

l

t

age  

Co

l

l

e

ctor to Em

i

t

ter

V

o

l

t

age  

Em

i

t

ter to Base

V

o

l

t

age  

Co

l

l

e

ctor Current  

S

y

mbol  

Cond

i

t

i

o

ns  

Rat

i

n

gs  

–

–

30  

–

–

30  

— 5  

Unit  

V

V

CBO  

V

V

CEO  

V

V

EBO  

I

C

— 5  

A

Co

l

l

e

ctor Current

(

P

u

l

s

e)  

I

CP  

— 8  

A

Continued on next page.  

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  

Product &

 

Package

I

n

f

o

rmat

i

o

n  

Package

D

i

m

ens

i

o

ns  

unit : mm (typ)  

• Package  

: PCP  

7007B-004  

• JEITA, JEDEC  

: SC-62, SOT-89, TO-243  

•

Minimum Packing Quantity

 

: 1,000 pcs./reel  

Top View  

2S

A

2

012-

T

D-E  

4.5  

1.6  

Pack

i

n

g

T

y

p

e:

T

D  

M

a

rk

i

n

g  

1.5  

TD  

1

2

3

0.4  

0.5  

0.4  

1.5  

3.0  

El

e

ctr

i

c

al Connect

i

o

n  

2

0.75  

1

3

1 : Base  

2 : Collector  

3 : Emitter  

Bottom View  

PCP  

Semiconductor Components Industries, LLC, 2013  

December, 2013  

D0413 TKIM TC-00003071/40710EA TKIM/21400TS (KOTO) TA-2520

 

No.6306-1/5  

2S

A

2

012  

Continued from preceding page.  

Pa

r

a

meter  

S

y

mbol  

Cond

i

t

i

o

ns  

Rat

i

n

gs  

Unit  

mA  

W

Base Current  

I

–

–

600  

1.3  

B

When mounted on ceram

i

c

s

ubstrate

(

2

50mm

2

0.8mm)  

×

Co

l

l

e

ctor

D

i

s

s

i

p

at

i

o

n  

P

C

T

c

=25 C  

3.5  

W

°

Junct

i

o

n

T

e

mperature  

Storage

T

e

mperature  

Tj  

150  

C

°

°

T

s

tg  

–

–

55 to +150  

C

at Ta=25°C  

El

e

ctr

i

c

al Character

i

s

t

i

c

s  

Rat

i

n

gs  

typ  

Pa

r

a

meter  

S

y

mbol  

Cond

i

t

i

o

ns  

Unit  

m

i

n  

max  

–

–

0.1  

–

–

0.1  

560  

Co

l

l

e

ctor Cuto

f

f

C

urrent  

Em

i

t

ter Cuto

f

f

C

urrent  

DC Current Ga

i

n  

I

V

=

–

–

30

V

, I

 

=

0A  

A

A

μ

CBO  

CB  

E

I

V

=

–

–

4

V

, I

 

=

0A  

μ

EBO  

EB C  

h

V

CE  

=

–

–

2

V

, I

 

=

–

–

500mA  

200  

FE  

C

Ga

i

n

-Bandw

i

d

th P

r

o

duct  

Output Capac

i

t

ance  

f

V

=

–

–

10

V

, I

 

=

–

–

500mA  

350  

30  

MHz  

pF  

mV  

mV  

V

T

CE C  

Cob  

V

CB  

=

(

–

–

)

1

0

V

,

f

=1MHz  

V

(

s

at

)

1  

(

s

at

)

2  

(

s

at)  

I

C

=

–

–

1.5

A

, I

 

=

–

–

30mA  

–

–

140  

–

–

170  

–

–

0.83  

–

–

210  

–

–

260  

–

–

1.2  

CE  

B

Co

l

l

e

ctor to Em

i

t

ter Saturat

i

o

n

V

o

l

t

age  

V

I =

–

–

2.5

A

,

 

I

=

–

–

125mA  

C B  

CE  

Base to Em

i

t

ter Saturat

i

o

n

V

o

l

t

age  

Co

l

l

e

ctor to Base Breakdown

V

o

l

t

age  

Co

l

l

e

ctor to Em

i

t

ter Breakdown

V

o

l

t

age  

Em

i

t

ter to Base Breakdown

V

o

l

t

age  

T

u

rn-ON Time  

V

I =

–

–

1.5

A

,

 

I

=

–

–

30mA  

C B  

BE  

V

I

C

=

–

–

10

A

,

 

I

=

0A  

–

–

30  

–

–

30  

–

–

5  

V

μ

(

B

R

)

C

BO  

E

V

I

C

=

–

–

1m

A

, R  

=

V

∞

(

B

R

)

C

EO  

BE  

V

I =

–

–

10

A

,

 

I

=

0A  

E

V

μ

(

B

R

)

EBO  

C

t

t

t

50  

270  

25  

ns  

on  

Storage

T

i

m

e  

See spec

i

fi

e

d

T

e

st C

i

r

c

u

i

t

.  

ns  

stg  

f

Fa

l

l Ti

m

e  

ns  

Sw

i

t

ch

i

n

g

T

i

m

e

T

e

st C

i

r

c

u

i

t  

I

B1  

PW=20

μ

s  

D.C.

≤

1%  

I

B2  

OUTPUT  

INPUT  

R

B

24

Ω  

V

R

+

+

50

Ω  

100

μ

F  

470

μ

F  

V

=5V  

V

=

–

–

12V  

CC  

BE  

I =20I

 

=

–

–

20I

 

=

–

–

500mA  

C B1

 

B2  

Order

i

n

g

I

n

f

o

rmat

i

o

n  

D

e

v

i

c

e  

Package  

PCP  

Sh

i

p

p

i

n

g  

1,000pcs./reel  

memo  

2S

A

2

012-

T

D-E  

Pb Free  

No.6306-2/5  

2S

A

2

012  

I

— V  

I

— V  

BE  

C

CE  

C

–

–

5.0  

–

–

4.5  

–

–

5  

–

–

4  

–

–

3  

–

–

2  

V

=

–

–

2V  

CE  

–

–

4.0  

–

–

3.5  

–

–

90mA  

–

–

40mA  

25

°

C  

–

–

3.0  

–

–

2.5  

–

–

2.0  

–

–

1.5  

–

–

1.0  

–

–

30mA  

–

–

20mA  

–

–

10mA  

–

–

1  

0

–

–

0.5  

0

I =0mA  

B

0

–

–

0.2  

–

–

0.4  

–

–

0.6  

–

–

0.8  

–

–

1.0  

0

–

–

0.2  

–

–

0.4  

–

–

0.6  

–

–

0.8  

–

–

1.0  

–

–

1.2  

–

–

1.4  

Collector to Emitter

V

o

ltage, V  

— V  

IT00134  

Base to Emitter

V

o

ltage, V  

— V  

IT00136  

CE  

BE  

h

— I  

f

— I  

C

FE  

C

T

1000  

1000  

V

=

–

–

10V  

V

=

–

–

2V  

CE  

CE  

7

5

7

5

Ta=75

°

C  

25

°

C  

3

2

3

2

–

–

25

°

C  

100  

100  

7

5

7

5

3

2

3

2

10  

10  

2

3

5

7

2

3

5

7

2

3

5

7

5

7

2

3

5

7

2

3

5

7

2

3

5 7  

–

–

10  

IT00148  

–

–

0.01  

–

–

0.1  

–

–

1.0  

–

–

10  

IT00138  

–

–

0.01  

–

–

0.1  

–

–

1.0  

Collector Current, I

 

–

– A  

Collector Current, I

 

–

– A  

C

C

Cob

–

– V  

CB  

V

(sat)

–

– I  

CE  

C

5

–

–

1000  

f=1MHz  

I

/ I

 

=20  

B

C

7

5

3

2

3

2

100  

7

5

–

–

100  

7

5

3

2

25

°

C  

3

2

10  

7

5

–

–

10  

3

2

7

5

5

7

2

3

5

7

2

3

5

7

2

3

5

2

3

5

7

2

3

5

7

2

3

5 7  

–

–

0.1  

–

–

1.0  

–

–

10  

— V  

–

–

0.01  

–

–

0.1  

–

–

1.0  

–

–

10  

IT00140  

Collector to Base

V

o

ltage, V  

IT00146  

Collector Current, I

 

–

– A  

CB  

C

V

(sat)

–

– I  

BE  

V

(sat)

–

– I  

CE  

C

C

–

–

10  

–

–

1000  

I

/ I

 

=50  

I /

 

I =50  

C B  

C

B

7

5

7

5

3

2

3

2

–

–

100  

–

–

1.0  

Ta=–25

°

C  

75

°

C  

7

5

7

5

25

°

C  

25

°

C  

3

2

3

2

–

–

10  

–

–

0.01  

–

–

0.1  

–

–

0.01  

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5 7  

–

–

10  

IT00144  

–

–

0.1  

–

–

1.0  

–

–

0.1  

–

–

1.0  

–

–

10  

IT00141  

Collector Current, I

 

–

– A  

Collector Current, I

 

–

– A  

C

C

No.6306-3/5  

2S

A

2

012  

P

C

— Ta  

S O A  

2

2.0  

100ms  

I

=

–

–

8A  

–

–

10  

CP  

7

5

I =

 

–

–

5A  

C

3

2

1.5  

1.3  

–

–

1.0  

7

5

1.0  

3

2

–

–

0.1  

7

0.5  

0

5

3

2

Tc=25

°

C  

Single pulse  

–

–

0.01  

2

3

5

7

2

3

5

7

–

–

10  

CE  

2

3

5

0

20  

40  

60  

80  

100  

120  

140  

IT00151  

160  

–

–

0.1  

–

–

1.0  

Ambient Temperature, Ta

 

–

–

°

C  

Collector to Emitter

V

o

ltage, V  

— V

 

IT00150  

P

— Tc  

C

4.0  

3.5  

3.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0

0

20  

40  

60  

80  

100  

120  

140  

160  

Case Temperature, Tc

 

–

–

°

C  

IT01532  

No.6306-4/5  

2S

A

2

012  

Out

l

i

n

e Draw

i

n

g  

L

a

nd Pattern Examp

l

e  

2SA2012-TD-E  

M

a

ss

(

g

)

 

Un

i

t  

Unit: mm  

0.058  

mm  

* For reference  

2.2  

45°  

45°  

1.0  

1.0  

1.5  

3.0  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals”

 

must be validated for each customer application by customer’s technical  

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  

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PS No.6306-5/5