onsemi-2SA2112-AN
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Order
i
n
g number : EN7379A
2SA2112
Bipolar Transistor
-50V, -3A, Low VCE(sat), PNP Single NMP
A
p
p
l
i
c
a
i
t
ons
•
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes
F
e
atures
•
•
•
•
Adoption of MBIT process
Large current capacity
High-speed switching
Low collector-to-emitter saturation voltage
Spec
i
fi
c
at
i
o
ns
A
b
so
l
u
te Maximum Rat
i
n
gs
at Ta=25°C
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
–
–
50
CBO
V
–
–
50
V
CES
V
–
–
50
V
CEO
V
— 6
V
EBO
I
C
— 3
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
Base Current
I
— 6
A
CP
I
B
–
–
600
mA
W
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
P
1
150
C
Tj
C
C
°
°
T
s
tg
–
–
55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package : NMP(Taping)
7540-001
•
•
JEITA, JEDEC : SC-71
Minimum Packing Quantity : 2,500 pcs./box
2.5
2S
A
2
112-
A
N
6.9
1.45
1.05
M
a
rk
i
n
g
(
NM
P
(
T
a
p
i
n
g
)
)
El
e
ctr
i
c
al Connect
i
o
n
2
A
2
112
L
O
T No.
3
0.6
0.5
1
0.9
1
2
3
0.45
1 : Emitter
2 : Collector
3 : Base
2.54
2.54
NMP(Taping)
Semiconductor Components Industries, LLC, 2013
September, 2013
82912 TKIM TC-00002806/N2503 TSIM TA-3749
No.7379-1/7
2S
A
2
112
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
DC Current Ga
i
n
I
V
=
–
–
40
V
, I
=
0A
–
–
1
–
–
1
A
A
μ
μ
CBO
CB E
I
V
=
–
–
4
V
, I
=
0A
EBO
EB C
h
V
CE
=
–
–
2
V
, I
=
–
–
100mA
200
560
FE
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
–
–
10
V
, I
=
–
–
500mA
390
24
MHz
pF
mV
mV
V
T
CE C
Cob
V
CB
=
–
–
10
V
,
f
=1MHz
V
(
s
at
)
1
(
s
at
)
2
(
s
at)
I
C
=
–
–
1
A
, I
=
–
–
50mA
–
–
135
–
–
260
–
–
0.88
–
–
270
–
–
700
–
–
1.2
CE
B
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
V
I =
–
–
2
A
,
I
=
–
–
100mA
C B
CE
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
V
I =
–
–
2
A
,
I
=
–
–
100mA
C B
BE
V
I
C
=
–
–
10
A
,
I
=
0A
–
–
50
–
–
50
–
–
50
–
–
6
V
μ
(
B
R
)
C
BO
E
V
I
C
=
–
–
100
A
,
R
=
0A
V
μ
(
B
R
)
C
ES
BE
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
V
I
C
=
–
–
1m
A
, R
=
∞
BE
V
(
B
R
)
C
EO
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-ON Time
V
I =
–
–
10
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
30
230
18
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
ns
stg
f
Fa
l
l Ti
m
e
ns
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B2
PW=20
μ
s
D.C.
≤
1%
OUTPUT
I
B1
INPUT
R
V
B
R
R
L
+
50
Ω
+
100
μ
F
470
μ
F
V
I
=5V
V
=
–
–
25V
CC
BE
=10I =
–
–
10I =
–
–
1A
C
B1 B2
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
NM
P
(
T
a
p
i
n
g)
Sh
i
p
p
i
n
g
2,500pcs./box
memo
2S
A
2
112-
A
N
Pb Free
No.7379-2/7
2S
A
2
112
I
— V
I
–
–
V
C CE
C
CE
–
–
2.0
–
–
1.6
–
–
1.2
–
–
0.8
–
–
2.0
–
–
1.6
–
–
1.2
–
–
0.8
–
–
4mA
–
–
2mA
–
–
0.4
0
–
–
0.4
0
I =0
I =0
B
B
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
0
–
–
4
–
–
8
–
–
12
–
–
16
–
–
20
Collector-to-Emitter
V
o
ltage, V
CE
— V
IT05441
Collector-to-Emitter
V
o
ltage, V
CE
— V
IT05442
I
C
— V
h
FE
— I
BE
C
1000
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
V
=
–
–
2V
V
=
–
–
2V
CE
CE
7
5
3
2
100
7
–
–
0.5
0
5
3
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
IT05443
2
3
5
7
2
3
5
7
2
3
5
–
–
0.01
–
–
0.1
–
–
1.0
Base-to-Emitter
V
o
ltage, V
BE
— V
Collector Current, I
–
– A
IT05444
C
V
(sat)
–
– I
V
(sat)
–
– I
CE C
CE
C
–
–
1.0
7
–
–
10
7
5
I
C
/ I
=20
I
/ I
=50
B
C
B
5
3
2
3
2
–
–
1.0
7
5
–
–
0.1
7
3
2
5
–
–
0.1
7
5
3
2
3
2
–
–
0.01
–
–
0.01
–
–
0.01
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
–
–
1.0
2
3
5
–
–
0.01
–
–
0.1
–
–
1.0
–
–
0.1
Collector Current, I
–
– A
IT05445
Collector Current, I
–
– A
IT05446
C
C
V
(sat)
–
– I
Cob
–
– V
CB
BE
C
100
–
–
10
f=1MHz
I
C
/ I
=50
B
7
5
7
5
3
2
3
2
25
°
C
–
–
1.0
7
5
3
10
–
–
1.0
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
–
–
0.01
–
–
0.1
–
–
1.0
–
–
10
–
–
100
IT05448
IT05447
Collector-to-Base
V
o
ltage, V
CB
— V
Collector Current, I
–
– A
C
No.7379-3/7
2S
A
2
112
f
— I
A S O
10ms
T
C
1000
–
–
10
7
5
V
=
–
–
10V
I
=
–
–
6.0A
CP
1ms
<10
μ
s
CE
7
I =
–
–
3.0A
C
5
3
2
3
2
–
–
1.0
7
5
100
3
2
7
5
–
–
0.1
7
5
3
2
3
2
Ta=25
°
C
Single pulse
10
–
–
0.01
–
–
0.01
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
–
–
10
2
3
5 7
–
–
0.1
–
–
1.0
–
–
0.1
–
–
1.0
Collector Current, I
–
– A
IT05449
Collector-to-Emitter
V
o
ltage, V
–
– V
IT05450
CE
C
P
— Ta
C
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature,
Ta
–
–
°
C
IT05451
No.7379-4/7
2S
A
2
112
B
a
g Pack
i
n
g Spec
i
fi
c
at
i
o
n
2SA2112-AN
No.7379-5/7
2S
A
2
112
Out
l
i
n
e Draw
i
n
g
2SA2112-AN
M
a
ss
(
g
)
Un
i
t
0.275
mm
* For reference
No.7379-6/7
2S
A
2
112
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
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PS No.7379-7/7
