onsemi-2SA2126-H
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| Download | onsemi-2SA2126-H |
Order
i
n
g number : EN7990A
2SA2126
Bipolar Transistor
-50V, -3A, Low VCE(sat), PNP Single TP/TP-
FA
A
p
p
l
i
c
at
i
o
ns
•
DC / DC converter, relay drivers, lamp drivers, motor drivers
F
e
atures
•
•
•
•
Adoption of MBIT processes
High current capacitance
High-speed switching
Low collector-to-emitter saturation voltage
Spec
i
fi
c
at
i
o
ns
A
b
so
l
u
te Maximum Rat
i
n
gs
at Ta=25°C
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
–
–
50
–
–
50
–
–
50
— 6
Unit
V
V
CBO
V
V
CES
V
V
CEO
V
V
EBO
I
C
— 3
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
Base Current
I
— 6
A
CP
I
B
–
–
600
mA
Continued on next page.
unit : mm (typ)
unit : mm (typ)
Package
D
i
m
ens
i
o
ns
Package
D
i
m
ens
i
o
ns
7518-003
7003-003
2.3
0.5
6.5
5.0
6.5
5.0
4
2.3
0.5
2S
A
2
126-
T
L
–
E
2S
A
2
126-
T
L
–
H
2S
A
2
126-E
2S
A
2
126-H
4
0.5
0.85
0.7
0.85
1.2
0.5
1
2
3
0.6
0 to 0.2
1.2
0.6
1 : Base
1 : Base
2 : Collector
3 : Emitter
2 : Collector
3 : Emitter
4 : Collector
1
2
3
4 : Collector
2.3
2.3
TP-FA
2.3
2.3
TP
Product &
Package
I
n
f
o
rmat
i
o
n
• Package : TP
• Package : TP-FA
•
•
JEITA, JEDEC :
SC-64, TO-251
500 pcs./bag
•
•
JEITA, JEDEC :
SC-63, TO-252
Minimum Packing Quantity
:
700 pcs./reel
Minimum Packing Quantity
:
M
a
rk
i
n
g
Pack
i
n
g
T
y
p
e
(
T
P
–
F
A)
: TL
El
e
ctr
i
c
al Connect
i
o
n
(TP, T
P
–
F
A)
2,4
A2126
1
LOT No.
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
60612 TKIM TC-00002496/21505EA TSIM TB-00000214
No.7990-1/9
2S
A
2
126
Continued from preceding page.
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
W
0.8
15
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
P
C
T
c
=25 C
W
°
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
T
s
tg
150
C
C
°
–
–
55 to +150
°
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
DC Current Ga
i
n
I
V
=
–
–
40
V
, I
=
0A
–
–
1
–
–
1
A
A
μ
CBO
CB
E
I
V
=
–
–
4
V
, I
=
0A
μ
EBO
EB C
h
V
CE
=
–
–
2
V
, I
=
–
–
100mA
200
560
FE
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
–
–
10
V
, I
=
–
–
500mA
390
24
MHz
pF
mV
mV
V
T
CE C
Cob
V
CB
=
–
–
10
V
,
f
=1MHz
V
(
s
at
)
1
(
s
at
)
2
(
s
at)
I
C
=
–
–
1
A
, I
= –
–
50mA
–
–
135
–
–
260
–
–
0.96
–
–
270
–
–
520
–
–
1.2
CE
B
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
V
I =
–
–
2
A
, I
= –
–
100mA
C B
CE
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-On Time
V
I =
–
–
2
A
, I
= –
–
100mA
C B
BE
V
I
C
=
–
–
10
A
, I
=
0A
–
–
50
–
–
50
–
–
50
–
–
6
V
μ
(
B
R
)
C
BO
E
V
I
C
=
–
–
100
A
, R
=
V
μ
0
(
B
R
)
C
ES
BE
V
I
C
=
–
–
1m
A
, R
=
BE
V
∞
(
B
R
)
C
EO
V
I =
–
–
10
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
30
230
18
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
ns
stg
f
Fa
l
l Ti
m
e
ns
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
PW=20
μ
s
D.C. 1%
I
B2
OUTPUT
INPUT
V
R
R
+
B
R
L
+
50
Ω
100
μ
F
470
μ
F
V
=5V
V
=
–
–
25V
CC
BE
–
–
10I =10I =
I =
–
–
1A
B1 B2
C
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
Sh
i
p
p
i
n
g
memo
2S
A
2
126-E
TP
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
Pb Free
2S
A
2
126-H
TP
Pb Free and Ha
l
o
gen Free
Pb Free
2S
A
2
126-
T
L
–
E
2S
A
2
126-
T
L
–
H
T
P
–
F
A
T
P
–
F
A
Pb Free and Ha
l
o
gen Free
No.7990-2/9
2S
A
2
126
I
— V
I
— V
BE
C
CE
C
–
–
5.0
–
–
4.5
–
–
4.0
–
–
3.5
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
–
–
3.0
–
–
2.5
V
=
–
–
2V
CE
–
–
2.0
–
–
1.5
–
–
1.0
–
–
0.5
0
–
–
0.5
0
I =0
B
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
–
–
1.4
–
–
1.6
–
–
1.8
–
–
2.0
— V
IT07642
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
IT07643
Collector-to-Emitter
V
o
ltage, V
CE
Base-to-Emitter
V
o
ltage, V
–
– V
BE
h
— I
f
T
— I
FE
C
C
1000
1000
V
=
–
–
10V
V
=
–
–
2V
CE
CE
7
5
7
5
3
2
3
2
100
7
100
7
5
5
3
3
2
2
2
3
3
3
5
7
2
3
5
7
2
3
5
7
2
3
3
3
5
5
5
7
2
3
5
7
2
3
5
7
–
–
0.01
–
–
0.1
–
–
1.0
–
–
10
IT07644
–
–
0.01
–
–
0.1
–
–
1.0
–
–
10
IT07645
Collector Current, I
–
– A
Collector Current, I
–
– A
C
C
Cob
–
– V
CB
V
(sat)
–
– I
CE
C
100
–
–
1.0
I
/ I
=20
B
f=1MHz
C
7
5
7
5
3
2
–
–
0.1
3
2
7
5
3
2
–
–
0.01
10
5
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
–
–
10
–
–
0.1
–
–
1.0
–
–
10
CB
C
–
–
100
–
–
0.01
–
–
0.1
–
–
1.0
IT07646
Collector Current, I
–
– A
IT07647
Collector-to-Base
V
o
ltage, V
— V
C
V
(sat)
–
– I
V
(sat)
–
– I
BE
CE
C
3
2
3
I
/ I
=20
B
I
/ I
=50
B
C
C
2
–
–
1.0
7
5
3
2
–
–
1.0
–
–
0.1
7
5
7
5
3
2
–
–
0.01
–
–
0.01
3
5
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
–
–
10
–
–
0.1
–
–
1.0
–
–
0.01
–
–
0.1
–
–
1.0
Collector Current, I
–
– A
IT07648
Collector Current, I
–
– A
IT07649
C
C
No.7990-3/9
2S
A
2
126
A S O
P
— Ta
C
–
–
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
=
–
–
6A
<
10
μ
s
7
CP
5
3
2
I =
–
–
3A
C
–
–
1.0
7
5
3
2
–
–
0.1
7
5
3
2
0.1
0
Tc=25
°
C
Single pulse
–
–
0.01
–
–
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
–
–
1.0
–
–
10
–
–
100
IT07650
Collector-to-Emitter
V
o
ltage, V
— V
Ambient Temperature, Ta
–
–
°
C
IT07651
CE
P
— Tc
C
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc
–
–
°
C
IT07652
No.7990-4/9
2S
A
2
126
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
2SA2126-TL-E, 2SA2126-TL-H
No.7990-5/9
2S
A
2
126
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
2SA2126-TL-E, 2SA2126-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.282
mm
* For reference
7.0
1.5
2.3
2.3
No.7990-6/9
2S
A
2
126
B
a
g Pack
i
n
g Spec
i
fi
c
at
i
o
n
2SA2126-E, 2SA2126-H
No.7990-7/9
2S
A
2
126
Out
l
i
n
e Draw
i
n
g
2SA2126-E, 2SA2126-H
M
a
ss
(
g
)
Un
i
t
0.315
mm
* For reference
No.7990-8/9
2S
A
2
126
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
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reserves the right to make changes without further notice to any products herein. SCILLC makes no
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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PS No.7990-9/9
