onsemi-2SB1122S-TD-E

Part #onsemi-2SB1122S-TD-E
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onsemi-2SB1122S-TD-E
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i
n
g number : EN2040C  
2SB1122  
Bipolar Transistor  
–
–
( )  
sat PNP
 
Single PCP  
50V, 1A,
 
Low V  
CE  
A
p
p
l
i
c
a
i
t
ons  
•
V
o
ltage regulators relay drivers, lamp drivers, electrical equipment  
F
e
atures  
•
Adoption of FBET process  
•
Ultrasmall size making it easy to provide high-density hybrid IC’s  
Spec
i
fi
c
at
i
o
ns  
A
b
so
l
u
te Maximum Rat
i
n
gs  
at Ta=25°C  
Pa
r
a
meter  
Co
l
l
e
ctor to Base
V
o
l
t
age  
Co
l
l
e
ctor to Em
i
t
ter
V
o
l
t
age  
Em
i
t
ter to Base
V
o
l
t
age  
Co
l
l
e
ctor Current  
S
y
mbol  
Cond
i
t
i
o
ns  
Rat
i
n
gs  
–
–
60  
–
–
50  
— 5  
Unit  
V
V
CBO  
V
V
CEO  
V
V
EBO  
I
C
— 1  
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)  
I
CP  
— 2  
A
Continued on next page.  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package
D
i
m
ens
i
o
ns  
Product &
 
Package
I
n
f
o
rmat
i
o
n  
unit : mm (typ)  
• Package  
: PCP  
7007B-004  
• JEITA, JEDEC  
: SC-62, SOT-89, TO-243  
•
Minimum Packing Quantity
 
: 1,000 pcs./reel  
Top View  
2SB1122S-
T
D-E  
2SB1122
T
–
T
D-E  
4.5  
1.6  
Pack
i
n
g
T
y
p
e:
T
D  
M
a
rk
i
n
g  
1.5  
TD  
RANK  
1
2
3
0.4  
0.5  
0.4  
1.5  
3.0  
El
e
ctr
i
c
al Connect
i
o
n  
2
0.75  
1
3
1 : Base  
2 : Collector  
3 : Emitter  
Bottom View  
PCP  
Semiconductor Components Industries, LLC, 2013  
December, 2013  
D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266
A
T,
T
S
 
No.2040-1/4  

2SB1122  
Continued from preceding page.  
Pa
r
a
meter  
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n  
Junct
i
o
n
T
e
mperature  
Storage
T
e
mperature  
S
y
mbol  
Cond
i
t
i
o
ns  
Rat
i
n
gs  
Unit  
W
P
When mounted on ceram
i
c
s
ubstrate
(
2
50mm

2

0.8mm)  
1.3  
×
C
Tj  
150  
C
°
°
T
s
tg  
–
–
55 to +150  
C
at Ta=25°C  
El
e
ctr
i
c
al Character
i
s
t
i
c
s  
Rat
i
n
gs  
typ  
Pa
r
a
meter  
S
y
mbol  
Cond
i
t
i
o
ns  
Unit  
m
i
n  
max  
Co
l
l
e
ctor Cuto
f
f
C
urrent  
Em
i
t
ter Cuto
f
f
C
urrent  
I
V
=
–
–
50
V
, I
 
=
0A  
–
–
100  
–
–
100  
400*  
nA  
nA  
CBO  
CB  
V =
–
–
4
V
,
 
I
=
0A  
EB  
E
I
EBO  
C
h
h
1
2
V
CE  
=
–
–
2
V
, I
 
=
–
–
100mA  
140*  
FE  
FE  
C
DC Current Ga
i
n  
V
CE  
=
–
–
2
V
, I
 
=
–
–
1A  
30  
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct  
Output Capac
i
t
ance  
f
V
=
–
–
10
V
, I
 
=
–
–
50mA  
150  
12  
MHz  
pF  
mV  
V
T
CE C  
Cob  
V
CB  
=
–
–
10
V
,
f
=1MHz  
Co
l
l
e
ctor to Em
i
t
ter Saturat
i
o
n
V
o
l
t
age  
Base to Em
i
t
ter Saturat
i
o
n
V
o
l
t
age  
Co
l
l
e
ctor to Base Breakdown
V
o
l
t
age  
Co
l
l
e
ctor to Em
i
t
ter Breakdown
V
o
l
t
age  
Em
i
t
ter to Base Breakdown
V
o
l
t
age  
T
u
rn-ON Time  
V
(
s
at)  
(
s
at)  
I
C
=
–
–
500m
A
, I
 
=
–
–
50mA  
–
–
180  
–
–
0.9  
–
–
500  
–
–
1.2  
CE  
B
V
I =
–
–
500m
A
,
 
I
=
–
–
50mA  
C B  
BE  
V
I
C
=
–
–
10
A
,
 
I
=
0A  
–
–
60  
–
–
50  
–
–
5  
V
μ
(
B
R
)
C
BO  
E
V
I
C
=
–
–
1m
A
, R  
=
V
∞
(
B
R
)
C
EO  
BE  
V
I =
–
–
10
A
,
 
I
=
0A  
E
V
μ
(
B
R
)
EBO  
C
t
t
t
40  
300  
30  
ns  
on  
Storage
T
i
m
e  
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.  
ns  
stg  
f
Fa
l
l Ti
m
e  
ns  
: 2SB1122 is classi
fi
ed by 100mA h
 
as follows :  
*
FE  
Rank  
S
T
h
140 to 280  
200 to 400  
FE  
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t  
I
B1  
PW=20
μ
s  
D.C.
≤
1%  
I
B2  
OUTPUT  
INPUT  
R
V
B
R
R
L
50
Ω  
50
Ω  
+
+
100
μ
F  
470
μ
F  
V
=5V  
V
=
–
–
25V  
CC  
BE  
I =10I
 
=
–
–
10I
 
=
–
–
500mA  
C B1
 
B2  
Order
i
n
g
I
n
f
o
rmat
i
o
n  
D
e
v
i
c
e  
2SB1122S-
T
D-E  
2SB1122
T
–
T
D-E  
Package  
PCP  
Sh
i
p
p
i
n
g  
memo  
1,000pcs./reel  
1,000pcs./reel  
Pb Free  
PCP  
I
— V  
I
–
–
 
V  
C BE  
C
CE  
–
–
1200  
–
–
1000  
–
–
800  
–
–
600  
–
–
400  
–
–
200  
–
–
1.0  
–
–
0.8  
–
–
0.6  
–
–
0.4  
V
=
–
–
2V  
CE  
–
–
1mA  
–
–
0.2  
0
I =0mA  
B
0
0
–
–
0.2  
–
–
0.4  
–
–
0.6  
–
–
0.8  
–
–
1.0  
–
–
1.2  
0
–
–
1  
–
–
2  
–
–
3  
–
–
4  
–
–
5  
Collector to Emitter
V
o
ltage, V  
— V
ITR08877  
Base to Emitter
V
o
ltage, V  
— V  
ITR08879  
CE  
BE  
No.2040-2/4  

2SB1122  
h
— I  
f
— I  
FE  
C
T
C
5
1000  
V
=
–
–
10V  
V
=
–
–
2V  
CE  
CE  
7
5
3
2
3
2
100  
100  
7
5
7
5
3
2
3
2
10  
7
10  
5
5
5
5
0
7
2
3
5
7
2
3
5
7
2
3
5
5
5
7
2
3
5
7
2
3
5
–
–
10  
–
–
100  
–
–
1000  
–
–
10  
–
–
100  
C
ITR08883  
ITR08881  
Collector Current, I
 
–
–
m
A  
Collector Current, I
 
–
–
m
A  
C
Cob
–
– V  
V
(sat)
–
– I  
C
CB  
CE  
5
–
–
1000  
f=1MHz  
I
/ I
 
=10  
B
C
7
5
3
2
3
2
10  
–
–
100  
7
5
7
5
C
°
-25  
–
3
2
3
2
–
–
10  
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
2
–
–
10  
–
–
100  
–
–
1000  
ITR08885  
–
–
1.0  
–
–
10  
–
–
100  
— V
 
ITR08884  
Collector to Base
V
o
ltage, V  
Collector Current, I
 
–
–
m
A  
CB  
C
V
(sat)
–
– I  
C
S O A  
BE  
3
2
–
–
10  
I
=
–
–
2A  
I
/ I
 
=10  
B
CP  
C
7
5
I =
 
–
–
1A  
C
–
–
1.0  
7
5
3
2
3
2
–
–
1.0  
–
–
0.1  
7
5
7
5
3
2
3
2
Ta=25
°
C Single
 
pulse  
When mounted on ceramic substrate (250mm

2

✕
0.8mm)  
–
–
0.01  
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
–
–
100  
–
–
10  
–
–
100  
–
–
1000  
ITR08887  
–
–
1.0  
–
–
10  
Collector Current, I
 
–
–
m
A  
Collector to Emitter
V
o
ltage, V
 
–
– V

ITR08889  

C
CE  
P
— Ta  
C
1.4  
1.3  
1.2  
1.0  
0.8  
0.6  
0.5  
0.4  
0.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta
–
–
°
C  
ITR08890  
No.2040-3/4  

2SB1122  
Out
l
i
n
e Draw
i
n
g  
L
a
nd Pattern Examp
l
e  
2SB1122S-TD-E, 2SB1122T-TD-E  
M
a
ss
(
g
)
 
Un
i
t  
Unit: mm  
0.058  
mm  
* For reference  
2.2  
45°  
45°  
1.0  
1.0  
1.5  
3.0  
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals”
 
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PS No.2040-4/4