onsemi-2SB1122S-TD-E
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Order
i
n
g number : EN2040C
2SB1122
Bipolar Transistor
–
–
( )
sat PNP
Single PCP
50V, 1A,
Low V
CE
A
p
p
l
i
c
a
i
t
ons
•
V
o
ltage regulators relay drivers, lamp drivers, electrical equipment
F
e
atures
•
Adoption of FBET process
•
Ultrasmall size making it easy to provide high-density hybrid IC’s
Spec
i
fi
c
at
i
o
ns
A
b
so
l
u
te Maximum Rat
i
n
gs
at Ta=25°C
Pa
r
a
meter
Co
l
l
e
ctor to Base
V
o
l
t
age
Co
l
l
e
ctor to Em
i
t
ter
V
o
l
t
age
Em
i
t
ter to Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
–
–
60
–
–
50
— 5
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
— 1
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
I
CP
— 2
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
Product &
Package
I
n
f
o
rmat
i
o
n
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity
: 1,000 pcs./reel
Top View
2SB1122S-
T
D-E
2SB1122
T
–
T
D-E
4.5
1.6
Pack
i
n
g
T
y
p
e:
T
D
M
a
rk
i
n
g
1.5
TD
RANK
1
2
3
0.4
0.5
0.4
1.5
3.0
El
e
ctr
i
c
al Connect
i
o
n
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
December, 2013
D0413 TKIM TC-00003072/31710EA TKIM/O1003TN (KOTO)/92098HA (KT)/4107KI/9266
A
T,
T
S
No.2040-1/4
2SB1122
Continued from preceding page.
Pa
r
a
meter
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
W
P
When mounted on ceram
i
c
s
ubstrate
(
2
50mm
2
0.8mm)
1.3
×
C
Tj
150
C
°
°
T
s
tg
–
–
55 to +150
C
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=
–
–
50
V
, I
=
0A
–
–
100
–
–
100
400*
nA
nA
CBO
CB
V =
–
–
4
V
,
I
=
0A
EB
E
I
EBO
C
h
h
1
2
V
CE
=
–
–
2
V
, I
=
–
–
100mA
140*
FE
FE
C
DC Current Ga
i
n
V
CE
=
–
–
2
V
, I
=
–
–
1A
30
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
–
–
10
V
, I
=
–
–
50mA
150
12
MHz
pF
mV
V
T
CE C
Cob
V
CB
=
–
–
10
V
,
f
=1MHz
Co
l
l
e
ctor to Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Base to Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
ctor to Base Breakdown
V
o
l
t
age
Co
l
l
e
ctor to Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
ter to Base Breakdown
V
o
l
t
age
T
u
rn-ON Time
V
(
s
at)
(
s
at)
I
C
=
–
–
500m
A
, I
=
–
–
50mA
–
–
180
–
–
0.9
–
–
500
–
–
1.2
CE
B
V
I =
–
–
500m
A
,
I
=
–
–
50mA
C B
BE
V
I
C
=
–
–
10
A
,
I
=
0A
–
–
60
–
–
50
–
–
5
V
μ
(
B
R
)
C
BO
E
V
I
C
=
–
–
1m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =
–
–
10
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
40
300
30
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
ns
stg
f
Fa
l
l Ti
m
e
ns
: 2SB1122 is classi
fi
ed by 100mA h
as follows :
*
FE
Rank
S
T
h
140 to 280
200 to 400
FE
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
PW=20
μ
s
D.C.
≤
1%
I
B2
OUTPUT
INPUT
R
V
B
R
R
L
50
Ω
50
Ω
+
+
100
μ
F
470
μ
F
V
=5V
V
=
–
–
25V
CC
BE
I =10I
=
–
–
10I
=
–
–
500mA
C B1
B2
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
2SB1122S-
T
D-E
2SB1122
T
–
T
D-E
Package
PCP
Sh
i
p
p
i
n
g
memo
1,000pcs./reel
1,000pcs./reel
Pb Free
PCP
I
— V
I
–
–
V
C BE
C
CE
–
–
1200
–
–
1000
–
–
800
–
–
600
–
–
400
–
–
200
–
–
1.0
–
–
0.8
–
–
0.6
–
–
0.4
V
=
–
–
2V
CE
–
–
1mA
–
–
0.2
0
I =0mA
B
0
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
0
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
Collector to Emitter
V
o
ltage, V
— V
ITR08877
Base to Emitter
V
o
ltage, V
— V
ITR08879
CE
BE
No.2040-2/4
2SB1122
h
— I
f
— I
FE
C
T
C
5
1000
V
=
–
–
10V
V
=
–
–
2V
CE
CE
7
5
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
7
10
5
5
5
5
0
7
2
3
5
7
2
3
5
7
2
3
5
5
5
7
2
3
5
7
2
3
5
–
–
10
–
–
100
–
–
1000
–
–
10
–
–
100
C
ITR08883
ITR08881
Collector Current, I
–
–
m
A
Collector Current, I
–
–
m
A
C
Cob
–
– V
V
(sat)
–
– I
C
CB
CE
5
–
–
1000
f=1MHz
I
/ I
=10
B
C
7
5
3
2
3
2
10
–
–
100
7
5
7
5
C
°
-25
–
3
2
3
2
–
–
10
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
2
–
–
10
–
–
100
–
–
1000
ITR08885
–
–
1.0
–
–
10
–
–
100
— V
ITR08884
Collector to Base
V
o
ltage, V
Collector Current, I
–
–
m
A
CB
C
V
(sat)
–
– I
C
S O A
BE
3
2
–
–
10
I
=
–
–
2A
I
/ I
=10
B
CP
C
7
5
I =
–
–
1A
C
–
–
1.0
7
5
3
2
3
2
–
–
1.0
–
–
0.1
7
5
7
5
3
2
3
2
Ta=25
°
C Single
pulse
When mounted on ceramic substrate (250mm
2
✕
0.8mm)
–
–
0.01
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
–
–
100
–
–
10
–
–
100
–
–
1000
ITR08887
–
–
1.0
–
–
10
Collector Current, I
–
–
m
A
Collector to Emitter
V
o
ltage, V
–
– V
ITR08889
C
CE
P
— Ta
C
1.4
1.3
1.2
1.0
0.8
0.6
0.5
0.4
0.2
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
ITR08890
No.2040-3/4
2SB1122
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
2SB1122S-TD-E, 2SB1122T-TD-E
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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PS No.2040-4/4
