onsemi-2SB1123SCZ-T-TD-E

Order

i

n

g number : EN1727F  

2SB1123/2SD1623  

Bipolar Transistor  

(–)  

(–)  

(

) (  

)

50V,  

2A, Low V  

CE  

sat ,

 

PNP NPN Single PCP  

A

p

p

l

i

c

a

i

t

ons  

•

V

o

ltage regulators, relay drivers, lamp drivers, electrical equipment  

F

e

atures  

•

•

•

•

•

Adoption of FBET, MBIT processes  

Large current capacity and wide ASO  

Low collector-to-emitter saturation voltage  

Fast switching speed  

The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further  

miniaturization  

( )

 

: 2SB1123  

Spec

i

fi

c

at

i

o

ns  

at Ta=25°C  

A

b

so

l

u

te Maximum Rat

i

n

gs  

Pa

r

a

meter  

Co

l

l

e

cto

r

–

to-Base

V

o

l

t

age  

Co

l

l

e

cto

r

–

to-Em

i

t

ter

V

o

l

t

age  

Em

i

t

te

r

–

to-Base

V

o

l

t

age  

Co

l

l

e

ctor Current  

S

y

mbol  

Cond

i

t

i

o

ns  

Rat

i

n

gs  

Unit  

V

V

(-

–

)

6

0  

(-

–

)

5

0  

(-

–

)

6  

CBO  

V

V

CEO  

V

V

EBO  

I

C

(-

–

)

2  

A

Co

l

l

e

ctor Current

(

P

u

l

s

e)  

I

CP  

(-

–

)

4  

A

Continued on next page.  

Package

D

i

m

ens

i

o

ns  

Product &

 

Package

I

n

f

o

rmat

i

o

n  

unit : mm (typ)  

• Package  

: PCP  

7007B-004  

• JEITA, JEDEC  

: SC-62, SOT-89, TO-243  

•

Minimum Packing Quantity

 

: 1,000 pcs./reel  

Top View  

2SB1123S-

T

D-E  

2SB1123

T

–

T

D-E  

2S

D

1623S-TD-E  

2S

D

1623

T

–

T

D-E  

4.5  

1.6  

Pack

i

n

g

T

y

p

e:

T

D  

1.5  

TD  

1

2

3

M

a

rk

i

n

g  

0.4  

0.5  

0.4  

1.5  

3.0  

R

A

NK  

R

A

NK  

2SB1123  

2S

D

1623  

2

0.75  

El

e

ctr

i

c

al Connect

i

o

n  

2

1 : Base  

2 : Collector  

3 : Emitter  

1

1

3

3

Bottom View  

PCP  

2SB1123  

2S

D

1623  

Semiconductor Components Industries, LLC, 2013  

September, 2013  

82212 TKIM/31010EA TKIM/N1501 TSIM/92098 HA (KT)/4107 KI/N275 KI/3045 MW, TS

 

No.1727-1/8  

2SB1123 / 2SD1623  

Continued from preceding page.  

Pa

r

a

meter  

S

y

mbol  

Cond

i

t

i

o

ns  

Rat

i

n

gs  

Unit  

W

0.5  

1.3  

Co

l

l

e

ctor

D

i

s

s

i

p

at

i

o

n  

P

C

When mounted on ceram

i

c

s

ubstrate

(

2

50mm

2

0.8mm)  

W

×

Junct

i

o

n

T

e

mperature  

Storage

T

e

mperature  

Tj  

T

s

tg  

150  

C

C

°

°

–

–

55 to +150  

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  

at Ta=25°C  

El

e

ctr

i

c

al Character

i

s

t

i

c

s  

Rat

i

n

gs  

typ  

Pa

r

a

meter  

S

y

mbol  

Cond

i

t

i

o

ns  

Unit  

m

i

n  

max  

Co

l

l

e

ctor Cuto

f

f

C

urrent  

Em

i

t

ter Cuto

f

f

C

urrent  

I

V

=

(

–

–

)

5

0

V

, I

 

=

0A  

(-

–

)

1

00  

(-

–

)

1

00  

560*  

nA  

nA  

CBO  

CB  

V =

(

–

–

)

4

V

,

 

I

=

0A  

EB  

E

I

EBO  

C

h

h

1

2

V

CE  

=

(

–

–

)

2

V

, I

 

=

(

–

–

)

1

00mA  

100*  

FE  

FE  

C

DC Current Ga

i

n  

V

CE  

=

(

–

–

)

2

V

, I

 

=

(

–

–

)

1

.5A  

40  

C

Ga

i

n

-Bandw

i

d

th P

r

o

duct  

Output Capac

i

t

ance  

f

V

=

(

–

–

)

1

0

V

, I

 

=

(

–

–

)

5

0mA  

150  

(

2

2

)

1

2  

MHz  

pF  

V

T

CE C  

Cob  

V

CB  

=

(

–

–

)

1

0

V

,

f

=1MHz  

Co

l

l

e

cto

r

–

to-Em

i

t

ter Saturat

i

o

n

V

o

l

t

age  

Base-to-Em

i

t

ter Saturat

i

o

n

V

o

l

t

age  

Co

l

l

e

cto

r

–

to-Base Breakdown

V

o

l

t

age  

Co

l

l

e

cto

r

–

to-Em

i

t

ter Breakdown

V

o

l

t

age  

Em

i

t

te

r

–

to-Base Breakdown

V

o

l

t

age  

T

u

rn-ON Time  

V

(

s

at)  

(

s

at)  

I

C

=

(

–

–

)

1

A

, I

 

=

(

–

–

)

5

0mA  

(-

–

0.3

)

0

.15  

(-

–

)

0

.9  

(-

–

0.7

)

0

.4  

(-

–

)

1

.2  

CE  

B

V

I

C

=

(

–

–

)

1

A

, I

 

=

(

–

–

)

5

0mA  

V

BE  

B

V

I

C

=

(

–

–

)

1

0

A

,

 

I

=

0A  

(-

–

)

6

0  

(-

–

)

5

0  

(-

–

)

6  

V

μ

(

B

R

)

C

BO  

E

V

I

C

=

(

–

–

)

1

m

A

, R  

=

V

∞

(

B

R

)

C

EO  

BE  

V

I =

(

–

–

)

1

0

A

,

 

I

=

0A  

E

V

μ

(

B

R

)

EBO  

C

t

t

t

(

6

0

)

6

0  

(

4

50

)

5

50  

(

3

0

)

3

0  

ns  

ns  

ns  

on  

Storage

T

i

m

e  

See spec

i

fi

e

d

T

e

st C

i

r

c

u

i

t

.  

stg  

f

Fa

l

l Ti

m

e  

: The 2SB1123 / 2SD1623 are classi

fi

ed by 100mA hFE as follows :  

*

Rank  

R

S

T

U

h

100 to 200  

140 to 280  

200 to 400  

280 to 560  

FE  

Sw

i

t

ch

i

n

g

T

i

m

e

T

e

st C

i

r

c

u

i

t  

PW=20

μ

s  

D.C.

≤

1%  

I

B1  

OUTPUT  

R

B

INPUT  

V

I

R

B2  

R =50

Ω  

L

50

Ω  

+

+

100

μ

F  

470

μ

F  

–

–

5V  

25V  

I =10I

 

=

–

–

10I

 

=500mA  

C

B1  

B2  

(For PN

P

,

t

he polarity is reversed)  

Order

i

n

g

I

n

f

o

rmat

i

o

n  

D

e

v

i

c

e  

2SB1123S-

T

D-E  

2SB1123

T

–

T

D-E  

2S

D

1623S-TD-E  

2S

D

1623

T

–

T

D-E  

Package  

Sh

i

p

p

i

n

g  

memo  

PCP  

PCP  

PCP  

PCP  

1,000pcs./reel  

1,000pcs./reel  

1,000pcs./reel  

1,000pcs./reel  

Pb Free  

No.1727-2/8  

2SB1123 / 2SD1623  

I

C

— V  

I

— V  

CE  

CE  

C

–

–

2.4  

–

–

2.0  

–

–

1.6  

–

–

1.2  

–

–

0.8  

2.4  

2SB1123  

Pulse  

2SD1623  

Pulse  

2.0  

1.6  

1.2  

0.8  

–

–

8mA  

–

–

6mA  

–

–

4mA  

–

–

2mA  

2mA  

I =0mA  

–

–

0.4  

0

0.4  

0

I =0mA  

B

B

0

0

0

–

–

0.4  

–

–

0.8  

–

–

1.2  

–

–

1.6  

–

–

2.0  

–

–

2.4  

0

0

0

0.4  

0.8  

1.2  

1.6  

2.0  

2.4  

Collector-to-Emitter

V

o

ltage, V  

CE  

— V

 

ITR08891  

Collector-to-Emitter

V

o

ltage, V  

CE  

— V

 

ITR08892  

I

C

— V  

I

C

— V  

CE  

CE  

–

–

1200  

–

–

1000  

–

–

800  

1200  

1000  

800  

2SB1123  

Pulse  

2SD1623  

Pulse  

–

–

600  

600  

3mA  

2mA  

1mA  

I =0mA  

–

–

400  

400  

–

–

200  

0

200  

0

I =0mA  

B

B

10  

–

–

2  

–

–

4  

–

–

6  

–

–

8  

–

–

10  

–

–

12  

2

4

6

8

12  

Collector-to-Emitter

V

o

ltage, V  

CE  

— V

 

ITR08893  

Collector-to-Emitter

V

o

ltage, V  

CE  

— V

 

ITR08894  

I

C

— V  

I

C

— V  

BE  

BE  

–

–

1200  

–

–

1000  

–

–

800  

–

–

600  

–

–

400  

1200  

1000  

800  

2SB1123  

2SD1623  

V =

 

–

–

2V  

CE  

V

CE  

=2V  

600  

400  

–

–

200  

0

200  

0

–

–

0.2  

–

–

0.4  

–

–

0.6  

–

–

0.8  

–

–

1.0  

–

–

1.2  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

Base-to-Emitter

V

o

ltage, V  

BE  

— V

 

ITR08895  

Base-to-Emitter

V

o

ltage, V  

— V

 

ITR08896  

BE  

h

— I  

h

— I  

C

FE  

C

FE  

1000  

1000  

2SB1123  

2SD1623  

7

5

7

5

V

=

–

–

2V  

V

=2V  

CE  

CE  

3

2

3

2

100  

100  

7

5

7

5

3

2

3

2

10  

–

–

10  

10  

2

3

5

7

2

3

5

7

2

3

5

2

3

5

7

2

3

5

7

2

3

5

–

–

100  

–

–

1000  

10  

100  

1000  

ITR08897  

ITR08898  

Collector Current, I

 

–

–

m

A  

Collector Current, I

 

–

–

m

A  

C

C

No.1727-3/8  

2SB1123 / 2SD1623  

f

— I  

f

— I  

C

T

C

T

1000  

1000  

2SB1123  

2SD1623  

7

7

V

=10V  

V

=10V  

CB  

CB  

5

5

3

2

3

2

100  

100  

7

5

7

5

3

2

3

2

10  

–

–

10  

10  

2

3

5

7

2

3

5

7

2

3

2

3

5

7

2

3

5

7

1000  

2

3

–

–

100  

–

–

1000  

10  

100  

ITR08899  

ITR08900  

Collector Current, I

 

–

–

m

A  

Collector Current, I

 

–

–

m

A  

C

C

Cob

–

– V  

Cob

–

– V  

CB  

CB  

2

100  

2SB1123  

f=1MHz  

2SD1623  

f=1MHz  

7

100  

5

7

5

3

2

3

2

10  

10  

7

5

7

5

–

–

1.0  

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

–

–

10  

–

–

100  

1.0  

10  

100  

Collector-to-Base

V

o

ltage, V  

— V

 

ITR08901  

Collector-to-Base

V

o

ltage, V  

— V

 

ITR08902  

CB  

CB  

V

(sat)

–

– I  

V

(sat)

–

– I  

CE C  

CE  

C

–

–

100  

100  

2SB1123  

2SD1623  

I

/ I

 

=20  

C B  

5

2

5

2

I

/ I

 

=20  

C

B

–

–

10  

10  

5

2

5

2

–

–

1.0  

1.0  

5

2

5

2

–

–

0.1  

0.1  

5

2

5

2

–

–

0.01  

–

–

10  

0.01  

2

3

5

7

2

3

5

7

2

3

2

3

5

7

2

3

5

7

1000  

2

3

–

–

100  

–

–

1000  

10  

100  

Collector Current, I

 

–

–

m

A  

C

ITR08903  

Collector Current, I

 

–

–

m

A  

ITR08904  

C

A S O  

P

C

— Ta  

10  

0.8  

2SB1123 / 2SD1623  

2SB1123 / 2SD1623  

I

=4A  

5

CP  

3

2

I =2A  

C

0.6  

0.5  

0.4  

1.0  

5

3

2

0.1  

0.2  

0

Ta=25

°

C  

Single pulse  

For PN

P

,

m

inus sign is omitted  

Mounted on a ceramic board (250mm

2

✕

0.8mm)  

5

3

2

5

7

2

3

5

7

2

3

5

7

0

20  

40  

60  

80  

100  

120  

140  

160  

1.0  

10  

100  

Collector-to-Emitter

V

o

ltage, V  

CE  

— V

ITR08906  

Ambient Temperature, Ta

–

–

°

C  

IT04221  

No.1727-4/8  

2SB1123 / 2SD1623  

P

— Ta  

C

1.6  

2SB1123 / 2SD1623  

1.4  

1.3  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0

0

20  

40  

60  

80  

100  

120  

140  

160  

Ambient Temperature, Ta

–

–

°

C  

IT04222  

No.1727-5/8  

2SB1123 / 2SD1623  

B

a

g Pack

i

n

g Spec

i

fi

c

at

i

o

n  

2SB1123S-TD-E, 2SB1123T-TD-E, 2SD1623S-TD-E, 2SD1623T-TD-E  

No.1727-6/8  

2SB1123 / 2SD1623  

Out

l

i

n

e Draw

i

n

g  

L

a

nd Pattern Examp

l

e  

2SB1123S-TD-E, 2SB1123T-TD-E, 2SD1623S-TD-E, 2SD1623T-TD-E  

M

a

ss

(

g

)

 

Un

i

t  

Unit: mm  

0.058  

mm  

* For reference  

2.2  

45°  

45°  

1.0  

1.0  

1.5  

3.0  

No.1727-7/8  

2SB1123 / 2SD1623  

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  

warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  

application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  

performance may vary over time. All operating parameters, including “Typicals”

 

must be validated for each customer application by customer’s technical  

experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  

as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  

which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  

any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  

harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  

death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  

part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  

PS No.1727-8/8