onsemi-2SB1124S-TD-H
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Order
i
n
g number : EN2019B
2SB1124/2SD1624
Bipolar Transistor
(–)
(–)
(
) (
)
50V,
3A, Low V
CE
sat ,
PNP NPN Single PCP
A
p
p
l
i
c
at
i
o
ns
•
V
o
ltage regulators, relay drivers, lamp drivers, electrical equipment
F
e
atures
•
•
•
Adoption of FBET, MBIT processes
Fast switching speed
Low collector-to-emitter saturation voltage
Large current capacity and wide ASO
•
( ):
2SB1124
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
(-
–
)
6
0
(-
–
)
5
0
(-
–
)
6
CBO
V
V
CEO
V
V
EBO
I
C
(-
–
)
3
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
I
CP
(-
–
)
6
A
Continued on next page.
Package
D
i
m
ens
i
o
ns
Product &
Package
I
n
f
o
rmat
i
o
n
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity
: 1,000 pcs./reel
Top View
2SB1124S-
T
D-E
2SB1124S-
T
D-H
2SB1124
T
–
T
D-E
2SB1124
T
–
T
D-H
2S
D
1624S-TD-E
2S
D
1624S-TD-H
2S
D
1624
T
–
T
D-E
2S
D
1624
T
–
T
D-H
4.5
1.6
Pack
i
n
g
T
y
p
e:
T
D
1.5
TD
1
2
3
M
a
rk
i
n
g
0.4
0.5
0.4
1.5
3.0
R
A
NK
R
A
NK
2SB1124
2S
D
1624
2
0.75
El
e
ctr
i
c
al Connect
i
o
n
2
1 : Base
2 : Collector
3 : Emitter
1
1
3
3
Bottom View
PCP
2SB1124
2S
D
1624
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/O1003TN (KOTO)/92098HA (KT)/3307
A
T,
T
S
No.2019-1/7
2SB1124 / 2SD1624
Continued from preceding page.
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
mW
W
500
1.5
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
P
C
When mounted on ceram
i
c
s
ubstrate
(
2
50mm
2
0.8mm)
×
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
T
s
tg
150
C
C
°
°
–
–
55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
(-
–
)
1
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=
(
–
–
)
4
0
V
, I
=
0A
A
A
μ
CBO
CB
E
I
V
=
(
–
–
)
4
V
, I
=
0A
(-
–
)
1
μ
EBO
EB C
h
h
1
2
V
=
(
–
–
)
2
V
, I
=
(
–
–
)
1
00mA
100*
560*
FE
FE
CE
C
DC Current Ga
i
n
V
CE
=
(
–
–
)
2
V
, I
=
(
–
–
)
3
A
35
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
(
–
–
)
1
0
V
, I
=
(
–
–
)
5
0mA
150
(
3
9
)
2
5
MHz
pF
V
T
CE C
Cob
V
CB
=
(
–
–
)
1
0
V
,
f
=1MHz
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-ON Time
V
(
s
at)
(
s
at)
I
C
=
(
–
–
)
2
A
, I
=
(
–
–
)
1
00mA
(-
–
0.35
)
0
.19
(-
–
)
0
.94
(-
–
0.7
)
0
.5
(-
–
)
1
.2
CE
B
V
V
CE
=
(
–
–
)
2
A
, I
=
(
–
–
)
1
00mA
V
BE
C
V
I
C
=
(
–
–
)
1
0
A
,
I
=
0A
(-
–
)
6
0
(-
–
)
5
0
(-
–
)
6
V
μ
(
B
R
)
C
BO
E
V
I
C
=
(
–
–
)
1
m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =
(
–
–
)
1
0
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
(
7
0
)
7
0
(
4
50
)
6
50
(
3
5
)
3
5
ns
ns
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
stg
f
Fa
l
l Ti
m
e
* ; T
h
e
2SB1124/2SD1624 are c
l
a
ss
i
fi
e
d by 100mA h
as
f
o
l
l
o
ws :
FE
Rank
R
S
T
U
h
100 to 200
140 to 280
200 to 400
280 to 560
FE
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
PW=20
μ
s
D.C.
≤
1%
I
B1
OUTPUT
R
B
INPUT
V
I
R
B2
25
Ω
50
Ω
+
+
100
μ
F
470
μ
F
–
–
5V
25V
I =10I
=
–
–
10I
=1A
B1 B2
C
For PN
P
,
t
he polarity is reversed.
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
2SB1124S-
T
D-E
2SB1124S-
T
D-H
2SB1124
T
–
T
D-E
2SB1124
T
–
T
D-H
2S
D
1624S-TD-E
2S
D
1624S-TD-H
2S
D
1624
T
–
T
D-E
2S
D
1624
T
–
T
D-H
Package
PCP
Sh
i
p
p
i
n
g
memo
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
1,00pcs./reel
Pb Free
PCP
Pb Free and Ha
l
o
gen Free
Pb Free
PCP
PCP
Pb Free and Ha
l
o
gen Free
Pb Free
PCP
PCP
Pb Free and Ha
l
o
gen Free
Pb Free
PCP
PCP
Pb Free and Ha
l
o
gen Free
No.2019-2/7
2SB1124 / 2SD1624
I
C
— V
CE
I
C
— V
CE
–
–
5.0
–
–
4.5
–
–
4.0
–
–
3.5
–
–
3.0
–
–
2.5
–
–
2.0
–
–
1.5
–
–
1.0
5.0
2SB1124
2SD1624
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
–
–
0.5
0
0.5
0
I =0
B
–
–
1.6
I =0
B
1.6
0
0
0
7
–
–
0.4
–
–
0.8
–
–
1.2
–
–
2.0
0
0
0
7
0.4
0.8
1.2
2.0
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR08907
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR08908
I
C
— V
I
— V
CE
C
CE
–
–
2.0
–
–
1.8
–
–
1.6
–
–
1.4
–
–
1.2
–
–
1.0
–
–
0.8
–
–
0.6
–
–
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2SB1124
2SD1624
–
–
0.2
0
0.2
0
I =0
B
I =0
B
16
–
–
2
–
–
4
–
–
6
–
–
8
–
–
10
–
–
12
–
–
14
–
–
16
–
–
18
–
–
20
2
4
6
8
10
12
14
18
20
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR08909
Collector-to-Emitter
V
o
ltage, V
–
– V
ITR08910
CE
I
C
— V
I
C
— V
BE
BE
–
–
3.2
–
–
2.8
–
–
2.4
3.2
2.8
2.4
2SB1124
2SD1624
V
=
–
–
2V
V
=2V
CE
CE
–
–
2.0
–
–
1.6
–
–
1.2
–
–
0.8
2.0
1.6
1.2
0.8
–
–
0.4
0
0.4
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
0.2
0.4
0.6
0.8
1.0
1.2
ITR08912
ITR08911
Base-to-Emitter
V
o
ltage, V
BE
— V
Base-to-Emitter
V
o
ltage, V
–
– V
BE
h
— I
h
— I
FE
C
FE C
1000
1000
2SB1124
2SD1624
V
7
5
7
5
V
=
–
–
2V
=2V
CE
CE
°
C
Ta=75
25
°
C
3
2
3
2
25
°
C
–
–
25
°
C
100
7
100
7
5
5
3
2
3
2
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0
2
3
5
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
ITR08913
ITR08914
Collector Current, I
–
– A
Collector Current, I
–
– A
C
C
No.2019-3/7
2SB1124 / 2SD1624
f
— I
C
Cob
–
– V
CB
T
1000
5
2SB1124 / 2SD1624
=10V
2SB1124 / 2SD1624
f=1MHz
7
V
CE
3
2
5
3
2
10
100
7
5
7
5
3
2
3
2
For PN
P
,
t
he minus sign is omitted.
For PN
P
,
t
he minus sign is omitted.
10
0.01
1.0
1.0
2
3
5
2
3
5
2
3
5
2
3
5
7
2
3
5
7
0.1
1.0
10
ITR08915
10
100
ITR08916
— V
Collector Current, I
–
– A
Collector-to-Base
V
o
ltage, V
CB
C
V
(sat)
–
– I
V
(sat)
–
– I
CE C
CE
C
–
–
1000
1000
2SB1124
2SD1624
I
/ I
=20
C
7
7
I
C
/ I
=20
B
B
5
5
3
2
3
2
–
–
100
100
7
5
7
5
3
2
3
2
–
–
10
10
7
7
3
2
3
5
7
2
3
5
7
2
3
5
7
7
0
2
3
5
7
2
3
5
7
2
3
5
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
1.0
Collector Current, I
–
– A
ITR08917
Collector Current, I
–
– A
ITR08918
C
C
C
C
V
(sat)
–
– I
V
(sat)
–
– I
BE
BE
–
–
10
10
2SB1124
/ I
=20
2SD1624
I
/ I
=20
C
I
7
7
C
B
B
5
5
3
2
3
2
–
–
1.0
1.0
7
5
7
5
3
3
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0
2
3
5
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
Collector Current, I
–
– A
C
ITR08919
Collector Current, I
–
– A
ITR08920
C
A S O
P
— Ta
C
1.8
10
I
CP
=6A
2SB1124 / 2SD1624
2SB1124 / 2SD1624
1ms
1.6
1.5
5
I =3A
C
3
2
1.4
1.2
1.0
1.0
0.8
5
3
2
0.6
0.5
0.4
0.1
Ta=25
°
C
5
Single pulse
For PN
P
,
m
inus sign is omitted.
0.2
0
3
2
Mounted on a ceramic board (250mm
2
✕
0.8mm)
5
7
2
3
5
7
2
3
5
7
100
20
40
60
80
100
120
140
160
1.0
10
ITR08922
Collector-to-Emitter
V
o
ltage, V
— V
ITR08921
Ambient Temperature, Ta
–
–
°
C
CE
No.2019-4/7
2SB1124 / 2SD1624
B
a
g Pack
i
n
g Spec
i
fi
c
at
i
o
n
2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H,
2SD1624T-TD-E, 2SD1624T-TD-H
No.2019-5/7
2SB1124 / 2SD1624
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H,
2SD1624T-TD-E, 2SD1624T-TD-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No.2019-6/7
2SB1124 / 2SD1624
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PS No.2019-7/7
