onsemi-2SB1229S-AA
| Part # | onsemi-2SB1229S-AA |
Download  | onsemi-2SB1229S-AA |
Ordering number:ENN2158A
PNP/NPN Epitaxial Planar Silicon
T
r
ansistor
2SB1229/2SD1835
Driver Applications
Applications
Package Dimensions
unit:mm
·
V
o
ltage regulators, relay drivers, lamp drivers,
electrical equipment.
2003B
[2SB1229/2SD1835]
5.0
4.0
Features
4.0
· Adoption of FBET, MBIT processes.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching time.
0.45
0.5
0.44
0.45
1
2
3
1 : Emitter
2 : Collector
3 : Base
( ) : 2SB1229
SANYO : NP
1.3
1.3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
V
(–)60
(–)50
(–)6
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
V
V
CEO
V
EBO
I
(–)2
A
C
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
I
(–)3
A
CP
P
C
0.75
150
W
˚
C
Tj
˚
C
Tstg
–55 to +150
Electrical Characteristics
at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
I
V
V
V
V
V
V
=(
–
)50V, I
=0
(
–
)100
(
–
)100
560*
nA
nA
CBO
CB
EB
CE
CE
CE
CB
E
Emitter Cutoff Current
DC Current Gain
I
=(
–
)4V, I
=0
EBO
C
h
h
1
=(
–
)2V, I
=(
–
)100mA
100*
40
FE
C
2
=(
–
)2V, I
=(
–
)1.5A
FE
C
Gain-Bandwidth Product
Output Capacitance
f
=(
–
)10V, I
=(
–
)50mA
150
12(22)
0.15
MHz
pF
V
T
C
C
=(
–
)10V, f=1MHz
ob
0.4
Collector-to-Emitter Saturation Voltage
V
I
=(
–
)1A, I
=(
–
)50mA
C B
CE(sat)
(
–
0.3) (
–
0.7)
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability,
such as life-support systems,
aircraft’s
control systems,
or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even
momentarily, rated values (such as maximum ratings,
operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
S
A
NYO El
e
ctric Co.,
L
t
d.
Sem
i
conductor
Com pany
TOKYO OFFICE
T
o
kyo Bldg., 1-10, 1 Chome, Ueno,
T
a
ito-ku, TOKYO, 110-8534 JAPAN
D1003TN (KT)/92098HA (KT)/4107KI/0296AT, TS
No.2158–1/5
2SB1229/2SD1835
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON TIme
V
I
I
I
=(
–
)1A, I
=(
–
)50mA
(
–
)0.9 (
–
)1.2
V
V
BE(sat)
C
C
C
B
V
V
V
=(
–
)10µA, I
=0
(
–
)60
(
–
)50
(
–
)6
(BR)CBO
(BR)CEO
(BR)EBO
E
=(
–
)1mA, R
=
∞
V
BE
I =(
–
)10µA, I
=0
V
E
C
t
See specified Test Circuit
60(60)
550
(450)
30
ns
ns
ns
ns
ns
on
Storage Time
Fall Time
t
See specified Test Circuit
stg
t
f
See specified Test Circuit
30
* : The 2SB1229/2SD1835 are classified by 100mA h
as follows :
FE
Rank
R
S
T
U
h
100 to 200
140 to 280
200 to 400
280 to 560
FE
Switching Time Test Circuit
I
B1
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
50
Ω
+
+
100
µ
F
470
µ
F
V
=
–
–
5V
V
CC
BE
I =10I
=
–
–
10I
=500mA, V
=25V
B1 B2
C
CC
(For PN
P
,
t
he polarity is reversed.)
I
— V
I
–
–
V
C CE
C
CE
–
–
2.4
–
–
2.0
–
–
1.6
–
–
1.2
–
–
0.8
2.4
2.0
1.6
1.2
0.8
2SB1229
2SD1835
50mA
—
–
–
6mA
–
–
4mA
–
–
2mA
–
–
0.4
0
0.4
0
I =0
B
I =0
B
0
–
–
0.4
–
–
0.8
–
–
1.2
–
–
1.6
–
–
2.0
–
–
2.4
0
0.4
0.8
1.2
1.6
2.0
– V
2.4
ITR09361
Collector-to-Emitter Voltage, V
CE
Collector-to-Emitter Voltage, V
CE
– V
ITR09360
I
— V
CE
I
— V
CE
C
C
–
–
1200
–
–
1000
–
–
800
–
–
600
–
–
400
1200
1000
800
2SB1229
2SD1835
600
2mA
1mA
400
200
0
–
–
200
0
I =0
I =0
B
B
0
–
–
2
–
–
4
–
–
6
–
–
8
–
–
10
–
–
12
– V
ITR09362
0
2
4
6
8
10
– V
12
Collector-to-Emitter Voltage, V
Collector-to-Emitter Voltage, V
CE
CE
ITR09363
No.2158–2/5
2SB1229/2SD1835
I
— V
I
— V
BE
C
BE
C
–
–
2.4
–
–
2.0
–
–
1.6
–
–
1.2
2.4
2SD1835
=2V
2SB1229
=
–
–
2V
V
V
CE
CE
2.0
1.6
1.2
0.8
–
–
0.8
–
–
0.4
0
0.4
0
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
ITR09364
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR09365
Base-to-Emitter Voltage, V
BE
– V
Base-to-Emitter Voltage, V
BE
– V
h
FE
— I
h
FE
— I
C
C
1000
1000
2SB1229
2SD1835
7
5
7
5
V
=
–
–
2V
V
=2V
CE
CE
3
2
3
2
5
°
C
Ta=7
100
100
7
5
7
5
3
2
3
2
7
2
3
5
7
2
3
5
7
2
7
2
3
5
7
2
3
5
7
2
3
3
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
1.0
Collector Current, I
– A
Collector Current, I
– A
ITR09367
ITR09366
C
C
f
— I
f
— I
T
C
T
C
1000
1000
2SD1835
2SB1229
7
5
7
5
V
=10V
V
=10V
CE
CE
3
2
3
2
100
7
100
7
5
5
3
2
3
2
10
–
–
10
10
3
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1000
2
3
–
–
100
–
–
1000
10
100
Collector Current, I
– mA
Collector Current, I
– mA
ITR09368
ITR09369
C
C
Cob
–
– V
Cob
–
– V
CB
CB
2
100
2SB1229
f=
1MHz
2SD1835
f=
1MHz
7
100
5
7
5
3
2
3
2
10
10
7
5
7
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
–
–
1.0
–
–
10
–
–
100
ITR09370
1.0
10
100
ITR09371
Collector-to-Base
V
o
ltage, V
CB
— V
Collector-to-Base
V
o
ltage, V
–
– V
CB
No.2158–3/5
2SB1229/2SD1835
V
(sat)
–
– I
V
(sat)
–
– I
CE C
CE
C
5
5
2SB1229
2SD1835
3
3
2
I
/ I
=
20
I
/ I
=
20
C
B
C B
2
1000
–
–
1000
7
5
7
5
3
2
3
2
–
–
100
100
7
5
7
5
3
2
3
2
10
–
–
10
7
7
3
2
3
5
7
2
3
5
7
2
3
7
2
3
5
7
2
3
5
7
2
3
–
–
0.01
–
–
1.0
0.01
1.0
Collecto
–
r
–
0
C
.
1
urrent, I
– A
Collecto
r
0
C
.1
urrent, I
– A
C
C
ITR09372
ITR09373
V
(sat)
–
– I
V
(sat)
–
– I
BE C
BE
C
–
–
10
10
2SB1229
/ I
=
20
2SD1835
/ I
=
20
7
7
I
I
C
B
C B
5
5
3
2
3
2
–
–
1.0
1.0
7
5
7
5
3
3
Collector Current, I
–
5
A
7
C
2
3
5
7
2
3
5
7
2
3
7
2
3
5
7
2
3
2
3
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
1.0
Collector Current, I
– A
C
ITR09374
ITR09375
A S O
P
— Ta
C
1000
5
3
2
I
=3A
2SB1229 / 2SD1835
2SB1229 / 2SD1835
CP
800
750
1.0
7
5
600
400
200
3
2
0.1
7
5
3
2
Ta=25
°
C
Single pulse
(For PN
P
,
m
inus sign is omitted.)
0.01
7
5
0
3
5
7
2
3
5
7
2
5
7
0
20
40
60
80
100
120
140
160
1.0
10
100
ITR09376
Ambient Temperature, Ta
– ˚C
Collector-to-Emitter Voltage, V
– V
ITR09377
CE
No.2158–4/5
2SB1229/2SD1835
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2003. Specifications and information herein are subject
to change without notice.
PS No.2158–5/5
