onsemi-2SC3649T-TD-E
| Part # | onsemi-2SC3649T-TD-E |
Download  | onsemi-2SC3649T-TD-E |
Order
i
n
g number : EN2007C
2SA1419/2SC3649
Bipolar Transistor
(–)
(–)
(
) (
)
160V,
1.5A, Low V
CE
sat ,
PNP NPN Single PCP
F
e
atures
•
Adoption of FBET, MBIT processes
•
•
High breakdown voltage and large current capacity
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
( )
: 2SA1419
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
(-
–
)
1
80
(-
–
)
1
60
(-
–
)
6
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
(-
–
)
1
.5
(-
–
)
2
.5
500
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
I
A
CP
mW
W
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
P
C
When mounted on ceram
i
c
s
ubstrate
(
2
50mm
2
0.8mm)
1.5
×
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
150
C
°
°
T
s
tg
–
–
55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product &
Package
I
n
f
o
rmat
i
o
n
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity
: 1,000 pcs./reel
Top View
2S
A
1
419S-
T
D-E
2S
A
1
419S-
T
D-H
2S
A
1
419
T
–
T
D-E
2S
A
1
419
T
–
T
D-H
2SC3649S-
T
D-E
2SC3649S-
T
D-H
2SC3649
T
–
T
D-E
2SC3649
T
–
T
D-H
4.5
1.6
Pack
i
n
g
T
y
p
e:
T
D
1.5
TD
1
2
3
M
a
rk
i
n
g
0.4
0.5
0.4
1.5
3.0
R
A
NK
R
A
NK
2S
A
1
419
2SC3649
0.75
El
e
ctr
i
c
al Connect
i
o
n
2
2
1 : Base
2 : Collector
3 : Emitter
1
1
3
3
Bottom View
PCP
2S
A
1
419
2SC3649
Semiconductor Components Industries, LLC, 2013
August, 2013
82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS
No.2007-1/7
2S
A
1
419 / 2SC3649
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
(-
–
)
1
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=
(
–
–
)
1
20
V
, I
=
0A
A
A
μ
CBO
CB E
I
V
=
(
–
–
)
4
V
, I
=
0A
(-
–
)
1
μ
EBO
EB C
h
h
1
2
V
=
(
–
–
)
5
V
, I
=
(
–
–
)
1
00mA
100*
400*
FE
FE
CE
C
DC Current Ga
i
n
V
CE
=
(
–
–
)
5
V
, I
=
(
–
–
)
1
0mA
80
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=
(
–
–
)
1
0
V
, I
=
(
–
–
)
5
0mA
120
MHz
pF
mV
V
T
CE C
Cob
V
CB
=
(
–
–
)
1
0
V
,
f
=1MHz
(
2
2
)
1
4
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-ON Time
V
(
s
at)
(
s
at)
I
C
=
(
–
–
)
5
00m
A
, I
=
(
–
–
)
5
0mA
(-
–
200
)
1
30
(
–
–
500
)
4
50
CE
B
V
I
C
=
(
–
–
)
5
00m
A
, I
=
(
–
–
)
5
0mA
(-
–
)
0
.85
(-
–
)
1
.2
BE
B
V
I
C
=
(
–
–
)
1
0
A
,
I
=
0A
(-
–
)
1
80
(-
–
)
1
60
(-
–
)
6
V
μ
(
B
R
)
C
BO
E
V
I
C
=
(
–
–
)
1
m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =
(
–
–
)
1
0
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
(
4
0
)
4
0
(
0
.7
)
1
.2
(
4
0
)
8
0
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
s
μ
stg
f
Fa
l
l Ti
m
e
ns
: The 2SA1419 / 2SC3649 are classi
fi
ed by 100mA h
as follows :
*
FE
Rank
R
S
T
h
100 to 200
140 to 280
200 to 400
FE
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
PW=20
μ
s
D.C.
≤
1%
I
B2
INPUT
R
R
B
L
V
R
50
Ω
+
+
100
μ
F
470
μ
F
–
–
5V
100V
I =10I
=
–
–
10I =0.7A
C
B1
B2
(For PN
P
,
t
he polarity is reversed)
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
2S
A
1
419S-
T
D-E
2S
A
1
419S-
T
D-H
2S
A
1
419
T
–
T
D-E
2S
A
1
419
T
–
T
D-H
2SC3649S-
T
D-E
2SC3649S-
T
D-H
2SC3649
T
–
T
D-E
2SC3649
T
–
T
D-H
Package
PCP
Sh
i
p
p
i
n
g
memo
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
Pb Free
PCP
Pb Free and Ha
l
o
gen Free
Pb Free
PCP
PCP
Pb Free and Ha
l
o
gen Free
Pb Free
PCP
PCP
Pb Free and Ha
l
o
gen Free
Pb Free
PCP
PCP
Pb Free and Ha
l
o
gen Free
No.2007-2/7
2S
A
1
419 / 2SC3649
I
— V
I
— V
CE
C
CE
C
–
–
1.8
–
–
1.6
–
–
1.4
–
–
1.2
–
–
1.0
–
–
0.8
–
–
0.6
–
–
0.4
–
–
0.2
0
1.8
2SA1419
2SC3649
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–
–
2mA
–
–
1mA
1mA
I =0mA
B
I =0mA
B
0
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
ITR03571
0
1
2
3
4
5
Collector-to-Emitter
V
o
ltage, V
CE
— V
Collector-to-Emitter
V
o
ltage, V
–
– V
ITR03572
CE
I
— V
I
— V
C
CE
C CE
1.0
0.8
0.6
0.4
0.2
0
–
–
1.0
–
–
0.8
–
–
0.6
–
–
0.4
–
–
0.2
0
2SC3649
2SA1419
0.5mA
I =0mA
B
I =0mA
B
0
–
–
10
–
–
20
–
–
30
–
–
40
–
–
50
0
10
20
30
40
50
ITR03574
Collector-to-Emitter
V
o
ltage, V
— V
ITR03573
Collector-to-Emitter
V
o
ltage, V
CE
— V
CE
I
— V
I
C
— V
C
BE
BE
–
–
1.6
1.6
1.2
0.8
0.4
0
2SC3649
2SA1419
V
=5V
V
=
–
–
5V
CE
CE
–
–
1.2
–
–
0.8
–
–
0.4
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
0.2
0.4
0.6
0.8
1.0
1.2
ITR03576
0
0
Base-to-Emitter
V
o
ltage, V
— V
ITR03575
Base-to-Emitter
V
o
ltage, V
–
– V
BE
BE
h
— I
h
— I
FE C
FE
C
1000
1000
2SA1419
2SC3649
7
5
7
5
V
=
–
–
5V
V
CE
=5V
CE
3
2
3
2
25
°
C
25
°
C
–
–
25
°
C
100
7
100
–
–
25
°
C
7
5
5
3
2
3
2
10
1
0
–
–
5
–
–
7
–
–
0.01
–
–
2
–
–
3
–
–
2
–
–
3
–
–
2
–
–
3
ITR03577
7
2
3
5
7
2
3
5
7
1.0
2
3
–
–
5
–
–
7
–
–
0.1
–
–
5
–
–
7
–
–
1.0
0.01
0.1
Collector Current, I
–
– A
Collector Current, I
–
– A
C
ITR03578
C
No.2007-3/7
2S
A
1
419 / 2SC3649
Cob
–
– V
CB
f
— I
C
T
5
100
2SA1419 / 2SC3649
2SA1419 / 2SC3649
7
5
3
2
3
2
2SA1419
100
7
5
10
3
2
7
5
For PN
P
,
m
inus sign is omitted
For PN
P
,
m
inus sign is omitted
3
1.0
10
0.01
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
0.1
1.0
ITR03579
10
100
ITR03580
Collector-to-Base
V
o
ltage, V
CB
— V
Collector Current, I
–
– A
C
V
(sat)
–
– I
V
(sat)
–
– I
CE C
CE
C
3
3
2
2SA1419
2SC3649
2
I
/ I
=10
I /
I =10
C
B
C B
1000
–
–
1000
7
5
7
5
3
2
3
2
25
°
C
100
–
–
100
25
°
C
7
7
5
5
–
–
25
°
C
–
–
25
°
C
3
2
3
2
2
3
5
7
2
3
5
7
2
3
7
7
0
2
3
5
7
2
3
5
7
1.0
2
3
7
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
ITR03581
ITR03582
Collector Current, I
–
– A
Collector Current, I
–
– A
C
C
V
(sat)
–
– I
V
(sat)
–
– I
BE C
BE
C
–
–
10
10
2SA1419
/ I
=10
2SC3649
7
5
7
5
I
I
/ I
=10
C
B
C B
3
2
3
2
Ta=–25
°
C
Ta=–25
°
C
–
–
1.0
1.0
7
5
7
5
25
°
C
75
°
C
25
°
C
75
°
C
3
3
7
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1.0
2
3
–
–
0.01
–
–
0.1
–
–
1.0
0.01
0.1
Collector Current, I
–
– A
Collector Current, I
–
– A
ITR03583
ITR03584
C
C
A S O
P
— Ta
C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
5
2SA1419 / 2SC3649
2SA1419 / 2SC3649
I
=2.5A
CP
3
2
I =1.5A
C
1.0
7
5
3
2
0.1
7
5
3
2
For PN
P
,
m
inus sign is omitted
0.01
Single pulse Ta=25
°
C
7
5
Mounted on a ceramic board (250mm
2
✕
0.8mm)
7
2
3
5
7
2
3
5
7
2
3
20
40
60
80
100
120
140
160
1.0
10
100
ITR03586
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR03585
Ambient Temperature, Ta
–
–
°
C
No.2007-4/7
2S
A
1
419 / 2SC3649
B
a
g Pack
i
n
g Spec
i
fi
c
at
i
o
n
2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H,
2SC3649T-TD-E, 2SC3649T-TD-H
No.2007-5/7
2S
A
1
419 / 2SC3649
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H,
2SC3649T-TD-E, 2SC3649T-TD-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.058
mm
* For reference
2.2
45°
45°
1.0
1.0
1.5
3.0
No.2007-6/7
2S
A
1
419 / 2SC3649
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.2007-7/7
