onsemi-2SC3746R

Part #onsemi-2SC3746R
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onsemi-2SC3746R
Ordering number : EN1973B  
S
A
N
Y
O
S
em
 
i
conductors  
DATA S
 
HEET  
PNP / NPN Epitaxial Planar Silicon Transistors  
60V / 5A High-Speed Switching  
Applications  
2SA1469 / 2SC3746  
Applications  
•
V
a
rious inductance lamp drivers for electrical equipment.  
Inverters, converters (flash, fluorescent lamp lighting circuit).  
Power amp (high power car stereo, motor controller).  
High-speed switching (switching regulator, driver).  
•
•
•
Features  
•
Low saturation voltage.  
•
Excellent current dependence of h  
•
Short switching time.  
.
FE  
•
Micaless package facilitating mounting.  
Specifications
( )
 
: 2SA1469  
Absolute Maximum Ratings
at Ta=25
°
C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
(
–
–
)80  
(
–
–
)60  
(
–
-)5  
(
–
-)5  
(
–
-)7  
2
V
V
I
A
C
Collector Current (Pulse)  
I
A
CP  
W
W
°
C  
°
C  
Collector Dissipation  
P
C
T
c
=25
°
C  
20  
Junction
T
e
mperature  
Storage
T
e
mperature  
Tj  
T
s
tg  
150  
–
–
55 to +150  
Electrical Characteristics
at Ta=25
°
C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=(
–
–
)40
V
, I
 
=
0A  
Unit  
min  
max  
I
V
CB  
V
EB  
V
CE  
(
–
–
)0.1  
(
–
–
)0.1  
280*  
mA  
mA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=(
–
–
)4V, I
 
=0A  
C
EBO  
h
FE  
=(
–
–
)2V, I
 
=(
–
–
)1A  
100*  
C
*
: The 2SA1469/2SC3746 are classified by 1A h
 
as follows :  
FE  
Continued on next page.  
Rank  
R
S
h
100 to 200  
140 to 280  
FE  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE
T
o
kyo Bldg., 1-10, 1 Chome, Ueno,
T
a
ito-ku, TOKYO, 110-8534 JAPAN  
72506FA MS IM TC-00000058 / O3103TN (KT) / 71598HA (KT) / 3277KI / N265KI
 
No.1973-1/4  

2SA1469 / 2SC3746  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Gain-Bandwidth Product  
Collector-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-On Time  
f
V
=(
–
–
)5V, I
 
=(
–
-)1A  
100  
MHz  
V
T
CE  
C
V
(sat)  
I
C
I
C
I
C
=(
–
–
)2.5A, I
 
=(
–
–
)0.125A  
(
–
–
)0.4  
CE  
B
V
V
V
=(
–
–
)1mA, I
 
=0A  
(
–
–
)80  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
E
=(
–
–
)1mA, R
 
=
∞  
BE  
(
–
–
)60  
(
–
–
)5  
V
I =(
–
-)1mA,
 
I =0A  
E
V
C
t
See specified
T
e
st Circuit.  
See specified
T
e
st Circuit.  
See specified
T
e
st Circuit.  
0.1  
0.5  
0.1  
µ
s  
µ
s  
µ
s  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Package Dimensions  
unit : mm (typ)  
Switching Time Test Circuit  
7508-002  
I
B1  
PW=20
µ
s  
OUTPUT  
I
D.C.
≤
1%  
B2  
4.5  
10.0  
2.8  
3.2  
INPUT  
R
B
R
L
V
10
Ω  
R
50
Ω  
+
+
100
µ
F  
=
–
–
5V  
470
µ
F  
V
V
=20V  
BE  
CC  
1.6  
1.2  
20I =
 
–
–
20I =I
 
=2A  
B1 B2  
C
For PN
P
,
t
he polarity is reversed.  
0.75  
0.7  
1
2
3
1 : Base  
2 : Collector  
3 : Emitter  
2.55  
2.55  
SANYO : TO-220ML  
I
— V  
I
— V  
BE  
C
BE  
C
6
5
4
3
2
—  
—  
—  
—  
—  
—  
6
5
4
3
2
2SC3746  
=2V  
2SA1469  
V
V
=
–
–
2V  
CE  
CE  
1
0
1
0
0
–
–
0.2  
–
–
0.4  
–
–
0.6  
–
–
0.8  
–
–
1.0  
–
–
1.2  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
ITR03648  
Base-to-Emitter
V
o
ltage, V  
BE  
— V  
Base-to-Emitter
V
o
ltage, V
 
–
– V  
BE  
ITR03647  
No.1973-2/4  

2SA1469 / 2SC3746  
h
FE  
— I  
h
FE  
— I  
C
C
1000  
1000  
2SC3746  
2SA1469  
7
7
V
CE  
=2V  
V
CE  
=
–
–
2V  
5
5
3
2
°
C  
Ta=120  
3
2
°
C  
Ta=120  
25
°
C  
25
°
C  
100  
°
C  
–
–
40  
100  
°
C  
–
–
40  
7
5
7
5
3
2
3
2
10  
10  
7
5
7
5
3
3
3
3
–
–
0.01  

7

–
–
0.1  

7

–
–
1.0  

7

–
–
10  
ITR03649  
2
3
5
2
5
2
5
2
2
3
5
7
2
3
5
7
2
3
5
7
2
0.01  
0.1  
1.0  
10  
ITR03650  
Collector Current, I
 
–
– A  
Collector Current, I
 
–
– A  
C
C
f
— I  
f
— I  
T C  
T
C
2
2
2SA1469  
2SC3746  
V
CE  
=
–
–
5V  
V
CE  
=5V  
100  
100  
7
5
7
5
3
2
3
2
10  
10  
7
5
7
5
5
2
3
5
2
3
5
2
3
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5
7

7

–
–
0.01  

7

–
–
0.1  

7

–
–
1.0  
–
–
10  
ITR03651  
0.01  
0.1  
1.0  
10  
ITR03652  
Collector Current, I
 
–
– A  
Collector Current, I
 
–
– A  
C
C
V
(sat)
–
– I  
V
(sat)
–
– I  
CE  
C
CE  
C
100  
–
–
100  
2SC3746  
/ I
 
=
20  
2SA1469  
5
3
2
5
I
I
/ I
 
=
20  
C
B
C
B
3
2
10  
–
–
10  
5
3
2
5
3
2
1.0  
–
–
1.0  
5
3
2
5
3
2
0.1  
–
–
0.1  
5
3
2
5
3
2
–
–
0.01  
–
–
0.01  
0.01  
0.01  

7

–
–
0.1  

7

–
–
1.0  
C
–
–
10  
ITR03653  
0.1  
1.0  
10  
ITR03654  
2
3
5
2
3
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
Collector Current, I
 
–
– A  
Collector Current, I
 
–
– A  
C
A S O  
A S O  
–
–
10  
10  
I
=7A  
I
=
–
–
7A  
2SC3746  
2SA1469  
CP  
CP  
7
5
7
5
I =5A  
C
I =
 
–
–
5A  
C
3
2
3
2
–
–
1.0  
1.0  
7
7
5
5
3
2
3
2
–
–
0.1  
0.1  
Tc=25
°
C  
Single Pulse  
Tc=25
°
C  
Single Pulse  
7
5
7
5
2
2
2
3
5
7
2
3
5
7
3
5
7
3
5
7
–
–
10  
–
–
100  
10  
100  
Collector-to-Emitter
V
o
ltage, V  
CE  
— V
 

ITR03655  

Collector-to-Emitter
V
o
ltage, V  
CE  
— V
 

ITR03656  

No.1973-3/4  

2SA1469 / 2SC3746  
P
— Ta  
P
—
T
c  
C
C
2.5  
2.0  
1.5  
1.0  
25  
2SA1469 / 2SC3746  
2SA1469 / 2SC3746  
20  
15  
10  
0.5  
0
5
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta
 
–
–
°
C  
IT11350  
IT11351  
Case Temperature, Tc
 
–
–
°
C  
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state,  
and are not guarantees of the performance, characteristics, and functions of the described products  
as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be  
evaluated in an independent device, the customer should always evaluate and test devices mounted  
in the customer’s products or equipment.  
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any  
and all semiconductor products fail with some probability. It is possible that these probabilistic failures  
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or  
fire, or that could cause damage to other property. When designing equipment, adopt safety measures  
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to  
protective circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO Semiconductor products (including technical data,services) described  
or contained herein are controlled under any of applicable local export control laws and regulations, such  
products must not be exported without obtaining the export license from the authorities concerned in  
accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic  
or mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”  
for the SANYO Semiconductor product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate  
and reliable, but no guarantees are made or implied regarding its use or any infringements of  
intellectual property rights or other rights of third parties.  
This catalog provides information as of July, 2006. Specifications and information herein are subject  
to change without notice.  
PS No.1973-4/4