onsemi-2SC4428M
| Part # | onsemi-2SC4428M |
Download  | onsemi-2SC4428M |
Ordering number : EN2851A
S
A
N
Y
O
S
em
i
conductors
DATA S
HEET
NPN Triple Diffused Planar Silicon Transistor
800V / 6A Switching Regulator
Applications
2SC4428
Features
•
High breakdown voltage, high reliability.
•
•
•
•
High-speed switching (t
: 0.1
µ
s typ).
Wide ASO.
Adoption of MBIT process.
Attachment workability is good by Mica-less package.
r
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
1100
800
7
V
V
I
6
A
C
Collector Current (Pulse)
Base Current
I
PW
≤
300
µ
s, duty cycle
≤
10%
T
c
=25
°
C
20
3
A
CP
I
B
A
3
W
W
°
C
°
C
Collector Dissipation
P
C
55
150
Junction
T
e
mperature
Storage
T
e
mperature
Tj
T
s
tg
–
–
55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
I
V
CB
V
EB
V
CE
V
CE
=800
V
, I
=
0A
10
µ
A
µ
A
CBO
E
Emitter Cutoff Current
I
=5
V
, I
=
0A
10
EBO
C
h
h
1
2
=5
V
, I
=
0.4A
10*
8
40*
FE
FE
C
DC Current Gain
=5
V
, I
=
2A
C
Continued on next page.
* : The h
1 of the 2SC4428 is classified as follows. When specifying the h
1 rank, specify two ranks or more in principle.
FE
FE
Rank
K
L
M
h
FE
10 to 20
15 to 30
20 to 40
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE
T
o
kyo Bldg., 1-10, 1 Chome, Ueno,
T
a
ito-ku, TOKYO, 110-8534 JAPAN
No.2851-1/4
71206 / 42506KB MS IM TB-00002147 / 13004TN (KT) / D1898HA (KT) / N248MO, TS
2SC4428
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
f
V
V
=10
V
, I
=
0.4A
C
15
120
MHz
pF
V
T
CE
Output Capacitance
Cob
=10
V
,
f
=1MHz
CB
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
V
V
(sat)
I
C
I
C
I
C
I
C
=3A, I
=0.6A
2.0
CE
B
(sat)
=3A, I
=0.6A
1.5
V
BE
B
V
V
V
=1mA, I
=0A
1100
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=5mA, R
=
∞
BE
800
7
V
I =1mA,
I =0A
V
E
C
C
V
(sus)
I
=3A, I
=0.6A, I
=
–
–
0.6A, L=1mH, Clamped
B1 B2
800
V
CEX
t
V
CC
V
CC
V
CC
=400V, I
=0.8A, I
=
–
-1.6A, I
=4A, R
=100
Ω
B1 B2
0.5
3.0
0.3
µ
s
µ
s
µ
s
on
C
L
Storage Time
t
=400V, I
=0.8A, I
=
–
-1.6A, I
=4A, R
=100
Ω
B1 B2
stg
C
L
Fall Time
t
=400V, I
=0.8A, I
=
–
-1.6A, I
=4A, R
=100
Ω
B1 B2
f
C
L
Package Dimensions
unit : mm
Switching Time Test Circuit
7502-002
I
I
B1
B2
OUTPUT
INPUT
PW=20
µ
s
5.6
3.4
16.0
3.1
R
B
R
L
D.C.
≤
1%
V
R
50
Ω
+
+
100
µ
F
=
–
–
5V
470
µ
F
V
V
=400V
CC
2.8
2.0
BE
2.0
0.6
1.0
1
2
3
1 : Base
2 : Collector
3 : Emitter
5.45
5.45
SANYO : TO-3PML
I
— V
CE
I
— V
C BE
C
7
6
5
4
3
2
7
6
5
4
3
2
V
=5V
CE
1
0
1
0
I =0mA
B
20mA
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR06862
Base-to-Emitter
V
o
ltage, V
–
– V
ITR06863
BE
No.2851-2/4
2SC4428
h
FE
— I
V
CE
(sat)
–
– I
C
C
2
10
V
=5V
I /
I =5
C B
7
CE
5
100
3
2
7
5
Ta=120
°
C
1.0
3
2
7
5
3
2
10
0.1
7
5
7
5
3
0.01
3
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0.1
1.0
10
0.1
1.0
10
ITR06865
ITR06864
Collector Current, I
–
– A
C
Collector Current, I
–
– A
C
V
BE
(sat)
–
– I
SW Time
–
– I
C
C
7
5
10
I
/ I
=5
B
C
7
5
3
2
3
2
1.0
7
5
1.0
3
2
7
5
0.1
3
7
5
0.1
2
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
ITR06866
1.0
10
ITR06867
Collector Current, I
–
– A
C
Collector Current, I
–
– A
C
Forward Bias A S O
Reverse Bias A S O
5
3
5
Tc=25
°
C
=
–
–
0.6A
3
2
I
=20A
CP
I
B2
2
L=200
µ
H
10
I
=6A
C
10
5
5
3
2
3
2
I
C
T
e
st Circuit
1.0
I
B1
1.0
5
I
B2
3
2
5
L
3
2
0.1
TUT
V
R
5
Tc=25
°
C
0.1
3
2
Single pulse
–
–
5V
100
V
CC
=20V
3
5
3
5
7
2
3
5
7
2
3
5
7
5
7
2
5
7
2
10
100
1000
— V
ITR06868
1000
— V
Collector-to-Emitter
V
o
ltage, V
Collector-to-Emitter
V
o
ltage, V
ITR06869
CE
CE
P
C
— Ta
P
C
—
T
c
3.5
3.0
2.5
2.0
1.5
1.0
70
60
50
40
30
20
0.5
0
10
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
ITR06870
Case Temperature, Tc
–
–
°
C
ITR06871
No.2851-3/4
2SC4428
Rth(t)
–
– t
5
Tc=25
°
C
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
3
5
2
3
5
2
3
5
2
3
5
0.1
1.0
10
100
1000
ITR06872
Time, t
–
–
m
s
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer’s products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.2851-4/4
