onsemi-2SC5658RM3T5G
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2SC5658M3T5G,
2SC5658RM3T5G
NPN Silicon General
Purpose Amplifier
T
r
ansistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
Features
•
Reduces Board Space
•
High h
, 21
0
−
460 (typical)
FE
SURFACE MOUNT
•
Low V
, < 0.5 V
CE(sat)
•
ESD Performance:
Human Body Model;
u
2000
V
,
COLLECTOR
3
Machine Model;
u
200 V
•
Available in 8 mm, 7
−
inch/3000 Unit Tape and Reel
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC
−
Q101
Qualified and PPAP Capable
•
These are Pb
−
Free Devices
1
2
BASE
EMITTER
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Symbol
Value
50
Unit
Vdc
MARKING
DIAGRAM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
V
V
50
Vdc
3
XXM
SOT
−
723
CASE 631AA
7.0
Vdc
2
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Rating
I
C
150
mAdc
1
XX =
Specific Device Code
(B9 =
2SC5658M3T5G
RM =
2SC5658RM3T5G)
Symbol
Max
260
Unit
mW
°
C
Junction
T
e
mperature
P
D
M
= Date Code
T
J
150
Storage
T
e
mperature Range
T
stg
−
55 ~
+
1
50
°
C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device
mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
†
Device
Package
Shipping
2SC5658M3T5G
SOT
−
723 8000
/
T
a
pe &
(Pb
−
Free) Reel
2SC5658RM3T5G
SOT
−
723 8000
/
T
a
pe &
(Pb
−
Free) Reel
NSV2SC5658M3T5G SOT
−
723 8000
/
T
a
pe &
(Pb
−
Free) Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
August, 2014
−
Rev. 5
2SC5658M3/D
2SC5658M3T5G, 2SC5658RM3T5G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C)
A
Characteristic
Collector-Base Breakdown Voltage (I
= 50
m
Adc, I
= 0)
Symbol
Min
50
50
7.0
−
Typ
−
Max
−
Unit
Vdc
Vdc
Vdc
m
A
V
C
E
(BR)CBO
(BR)CEO
(BR)EBO
Collector-Emitter Breakdown Voltage (I
= 1.0 mAdc, I
= 0)
V
V
−
−
C
B
Emitter-Base Breakdown Voltage (I
= 50
m
Adc, I
= 0)
−
−
E
E
Collector-Base Cutoff Current (V
= 30 Vdc, I
= 0)
I
CBO
−
0.5
0.5
CB
E
Emitter-Base Cutoff Current (V
= 4.0 Vdc, I
= 0)
I
EBO
−
−
m
A
EB
B
V
Vdc
CE(sat)
(I =
50 mAdc, I
= 5.0 mAdc)
−
−
0.4
C
B
(V =
6.0 Vdc, I
= 1.0 mAdc)
h
FE
−
2SC5658M3T5G
2SC5658RM3T5G
120
215
−
−
560
375
CE
C
(V =
6.0 Vdc, I
= 1.0 mAdc)
CE
C
Transition Frequency (V
= 12 Vdc, I
= 2.0 mAdc, f = 30 MHz)
f
−
−
180
2.0
−
−
MHz
pF
CE
C
T
Output Capacitance (V
= 12 Vdc, I
= 0 Adc, f = 1.0 MHz)
C
CB
C
OB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Include NSV
−
prefix devices where applicable.
2. Pulse
T
e
st: Pulse Width
≤
300
m
s, D.C.
≤
2%.
2
2SC5658M3T5G, 2SC5658RM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
1
60
50
40
30
I /I
= 10
C
B
160
m
A
140
m
A
T =
25
°
C
A
120
m
A
100
m
A
80
m
A
0.1
T =
25
°
C
A
60
m
A
20
10
0
T =
150
°
C
A
40
m
A
T =
−
55
°
C
I
B
= 20
m
A
A
0.01
0
2
4
6
8
0.1
1
10
100
1000
V
CE
, COLLECTOR VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. I
C
−
V
CE
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
1
1000
100
10
V
= 6 V
I /I
= 10
CE
C
B
T =
150
°
C
A
T =
25
°
C
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T =
−
55
°
C
A
T =
−
55
°
C
A
T =
25
°
C
A
T =
150
°
C
A
0.1
1
10
100
1000
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Base Emitter Saturation Voltage vs.
Figure 4. DC Current Gain vs. Collector
Current
Collector Current
30 mA
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
= 2 V
T =
25
°
C
CE
A
50 mA
30 mA
T =
−
55
°
C
A
T =
25
°
C
A
T =
150
°
C
A
I
= 100 mA
C
10 mA
0.01
0.1
1
10
100
0.1
1
10
100
1000
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Saturation Region
Figure 6. Base
−
Emitter Turn
−
ON Voltage vs.
Collector Current
3
2SC5658M3T5G, 2SC5658RM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
1
1000
V
=
−
2 V
CE
T =
25
°
C
A
C
ibo
100
C
obo
10
0.1
0.1
1
10
100
1
10
100
1000
V ,
REVERSE VOLTAGE (V)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Capacitance
Figure 8. Current Gain Bandwidth Product vs.
Collector Current
1000
100 ms
10 ms
100
10 s
Thermal
Limit
10
1
1
10
100
V
CE
, COLLECTOR REVERSE VOLTAGE (V)
Figure 9. Safe Operating Area
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
723
CASE 631AA
−
01
ISSUE D
DATE 10 AUG 2009
SCALE 4:1
NOTES:
−
X
−
1. DIMENSIONING
AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
A
b1
−
Y
−
3
E
H
E
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X
b
3X
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X
e
0.08 X
Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H
E
L
1.15
0.15
1.25
0.25
L2
GENERIC
3X
L2
MARKING DIAGRAM*
BOTTOM VIEW
STYLE 1:
PIN 1.
BASE
STYLE 2:
PIN 1.
ANODE
2. N/C
STYLE 3:
STYLE 4:
STYLE 5:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
ANODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
XX M
1
2. EMITTER
3. COLLECTOR
3. CATHODE
3. CATHODE
XX
M
= Specific Device Code
= Date Code
RECOMMENDED
SOLDERING FOOTPRINT*
*This information is generic. Please refer
to device data sheet for actual part
marking. Pb
−
Free indicator, “G”, may
or not be present.
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12989D
SOT
−
723
PAGE 1 OF 1
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:
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