onsemi-2SC6097-E

Part #onsemi-2SC6097-E
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onsemi-2SC6097-E
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i
n
g number : EN
A
0
412A  
2SC6097  
Bipolar Transistor  
(
)
sat , NPN Single TP/TP-FA  
60V, 3A, Low V  
CE  
A
p
p
l
i
c
at
i
o
ns  
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter  
F
e
atures  
•
•
•
•
•
Adoption of FBET, MBIT process  
Low collector-to-emitter saturation voltage  
High allowable power dissipation  
Large current capacity  
High-speed switching  
Spec
i
fi
c
at
i
o
ns  
A
b
so
l
u
te Maximum Rat
i
n
gs  
at Ta=25°C  
Pa
r
a
meter  
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age  
Em
i
t
te
r
–
to-Base
V
o
l
t
age  
Co
l
l
e
ctor Current  
S
y
mbol  
Cond
i
t
i
o
ns  
Rat
i
n
gs  
100  
100  
60  
Unit  
V
V
CBO  
V
V
CES  
V
V
CEO  
V
6.5  
3
V
EBO  
I
C
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)  
Base Current  
I
5
A
CP  
I
B
600  
mA  
Continued on next page.  
unit : mm (typ)  
unit : mm (typ)  
Package
D
i
m
ens
i
o
ns  
7518-003  
Package
D
i
m
ens
i
o
ns  
7003-003  
2.3  
0.5  
6.5  
5.0  
6.5  
5.0  
4
2.3  
0.5  
2SC6097-E  
2SC6097-
T
L
–
E  
4
0.5  
0.85  
0.7  
0.85  
1.2  
0.5  
1
2
3
0.6  
0 to 0.2  
1.2  
0.6  
1 : Base  
1 : Base  
2 : Collector  
3 : Emitter  
2 : Collector  
3 : Emitter  
4 : Collector  
1
2
3
4 : Collector  
2.3  
2.3  
TP-FA  
2.3  
2.3  
TP  
Product &
 
Package
I
n
f
o
rmat
i
o
n  
• Package : TP  
• Package : TP-FA  
•
•
JEITA, JEDEC : S
C-64, TO-251  
•
•
JEITA, JEDEC :
SC-63, TO-252  
Minimum Packing Quantity
:
700 pcs./reel  
Minimum Packing Quantity  
:
500 pcs./bag  
M
a
rk
i
n
g  
Pack
i
n
g
T
y
p
e
(
T
P
–
F
A)
 
: TL  
El
e
ctr
i
c
al Connect
i
o
n  
2,4  
(TP, T
P
–
F
A)  
C6097  
1
LOT No.  
TL  
3
Semiconductor Components Industries, LLC, 2013  
September, 2013  
80812 TKIM/70306/53006EA MSIM TB-00002348
 
No. A0412-1/9  

2SC6097  
Continued from preceding page.  
Pa
r
a
meter  
S
y
mbol  
Cond
i
t
i
o
ns  
Rat
i
n
gs  
Unit  
W
0.8  
15  
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n  
P
C
T
c
=25 C  
W
°
Junct
i
o
n
T
e
mperature  
Storage
T
e
mperature  
Tj  
T
s
tg  
150  
C
C
°
°
–
–
55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
at Ta=25°C  
El
e
ctr
i
c
al Character
i
s
t
i
c
s  
Rat
i
n
gs  
typ  
Pa
r
a
meter  
S
y
mbol  
Cond
i
t
i
o
ns  
Unit  
m
i
n  
max  
Co
l
l
e
ctor Cuto
f
f
C
urrent  
Em
i
t
ter Cuto
f
f
C
urrent  
DC Current Ga
i
n  
I
V
=50
V
, I
 
=
0A  
1
1
A
A
μ
CBO  
CB E  
I
V
=4
V
, I
 
=
0A  
μ
EBO  
EB C  
h
V
CE  
=2
V
, I
 
=
100mA  
300  
600  
FE  
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct  
Output Capac
i
t
ance  
f
V
=10
V
, I
 
=
500mA  
390  
18  
MHz  
pF  
mV  
mV  
V
T
CE C  
Cob  
V
CB  
=10
V
,
f
=1MHz  
V
(
s
at
)
1  
(
s
at
)
2  
(
s
at)  
I
C
=1
A
, I
 
=
50mA  
100  
90  
150  
135  
1.2  
CE  
B
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age  
V
I =1
A
,
 
I
=
100mA  
C B  
CE  
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age  
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age  
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age  
T
u
rn-On Time  
V
I
C
=1
A
, I
 
=
100mA  
0.84  
BE  
B
V
I
C
=10
A
,
 
I
=
0A  
100  
100  
60  
V
μ
(
B
R
)
C
BO  
E
V
I
C
=100
A
,
 
R  
=
V
μ
0
Ω
 
(
B
R
)
C
ES  
BE  
V
I
C
=1m
A
, R
 
=  
BE  
V
∞
(
B
R
)
C
EO  
V
I =10
A
,
 
I
=
0A  
E
6.5  
V
μ
(
B
R
)
EBO  
C
t
t
t
35  
680  
24  
ns  
on  
Storage
T
i
m
e  
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t  
ns  
stg  
f
Fa
l
l Ti
m
e  
ns  
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t  
I
B1  
PW=20
μ
s  
OUTPUT  
D.C. 1%  
I
B2  
INPUT  
V
10  
R
R
B
R
L
50
Ω  
+
+
100
μ
F  
=
–
–
5V  
470
μ
F  
V
V
=30V  
CC  
BE  
I =10I
 
=
–
–
10I
 
=0.5A  
C
B1  
B2  
Order
i
n
g
I
n
f
o
rmat
i
o
n  
D
e
v
i
c
e  
Package  
TP  
Sh
i
p
p
i
n
g  
memo  
Pb Free  
Pb Free  
2SC6097-E  
500pcs./bag  
700pcs./reel  
2SC6097-
T
L
–
E  
T
P
–
F
A  
No. A0412-2/9  

2SC6097  
I
— V  
I
C
— V  
BE  
C
CE  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
V
=2V  
CE  
0.5  
0
0.5  
0
I =0mA  
B
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT11047  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
Collector-to-Emitter
V
o
ltage, V  
— V
 
IT11046  
Base-to-Emitter
V
o
ltage, V  
— V  
CE  
BE  
f
— I  
h
— I  
T
C
FE  
C
1000  
7
5
V
CE  
=10V  
V
=2V  
CE  
7
5
3
2
3
2
100  
7
5
100  
7
5
3
2
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
0.01  
0.1  
1.0  
0.01  
0.1  
1.0  
IT11048  
IT11049  
Collector Current, I
 
–
– A  
C
Collector Current, I
 
–
– A  
C
V
(sat)
–
– I  
Cob
–
– V  
CE  
C
CB  
7
5
5
I
/ I
 
=10  
B
f=1MHz  
C
3
2
0.1  
3
2
7
5
3
2
0.01  
10  
7
5
7
5
3
2
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0.1  
1.0  
10  
100  
0.1  
1.0  
Collector-to-Base
V
o
ltage, V  
CB  
— V  
IT11050  
Collector Current, I
 
–
– A  
IT11051  
C
V
(sat)
–
– I  
C
V
(sat)
–
– I  
BE  
CE  
C
5
3
2
I
/ I
 
=20  
B
I
/ I
 
=10  
B
C
C
3
2
0.1  
7
5
1.0  
3
2
7
5
0.01  
7
3
0.01  
5
0.01  
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
1.0  
2
3
5
0.1  
1.0  
0.1  
Collector Current, I
 
–
– A  
IT11053  
Collector Current, I
 
–
– A  
IT11052  
C
C
No. A0412-3/9  

2SC6097  
A S O  
A S O  
10  
10  
10ms  
7
5
7
5
1ms  
<
10
μ
s  
I
=5A  
<
10
μ
s  
I
=5A  
CP  
CP  
3
2
3
2
I =3A  
C
DC operation  
100ms  
I =3A  
C
1.0  
7
5
1.0  
7
5
3
2
3
2
0.1  
0.1  
7
5
7
5
3
2
3
Ta=25
°
C  
2
Tc=25
°
C  
Single Pulse  
Single Pulse  
0.01  
0.1  
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
100  
IT11055  
1.0  
10  
100  
IT11054  
1.0  
10  
Collector-to-Emitter
V
o
ltage, V  
CE  
— V  
Collector-to-Emitter
V
o
ltage, V  
CE  
— V  
P
— Ta  
P
C
— Tc  
C
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
17.5  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0
0.1  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
IT11056  
IT11057  
Ambient Temperature, Ta
 
–
–
°
C  
Case Temperature, Tc
 
–
–
°
C  
No. A0412-4/9  

2SC6097  
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n  
2SC6097-TL-E  
No. A0412-5/9  

2SC6097  
Out
l
i
n
e Draw
i
n
g  
L
a
nd Pattern Examp
l
e  
2SC6097-TL-E  
M
a
ss
(
g
)
 
Un
i
t  
Unit: mm  
0.282  
mm  
* For reference  
7.0  
1.5  
2.3  
2.3  
No. A0412-6/9  

2SC6097  
B
a
g Pack
i
n
g Spec
i
fi
c
at
i
o
n  
2SC6097-E  
No. A0412-7/9  

2SC6097  
Out
l
i
n
e Draw
i
n
g  
2SC6097-E  
M
a
ss
(
g
)
 
Un
i
t  
0.315  
mm  
* For reference  
No. A0412-8/9  

2SC6097  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals”
 
must be validated for each customer application by customer’s technical  
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
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death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
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PS No. A0412-9/9