onsemi-2SD1060R-1E
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Order
i
n
g number : EN686K
2SD1060
Bipolar Transistor
( )
sat NPN
TO-220-3L
50V, 5A, Low V
CE
A
p
p
l
i
c
at
i
o
ns
•
Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching
F
e
atures
•
Low collector-to-emitter saturation voltage : V
(sat)=0.3V max / I
=3A, I
= 0.3A
CE
C
B
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
60
50
6
CBO
V
V
CEO
V
V
EBO
I
C
5
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
I
CP
9
A
1.75
30
150
W
W
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
P
C
T
c
=25 C
°
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
C
C
°
°
T
s
tg
–
–
55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product &
Package
I
n
f
o
rmat
i
o
n
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
• Package
: TO-220-3L
7536-002
• JEITA, JEDEC
: SC-46, TO-220AB
• Minimum Packing Quantity : 50 pcs./magazine
4.5
10.0
3.6
M
a
rk
i
n
g
El
e
ctr
i
c
al Connect
i
o
n
1.3
2
(0.6)
8.9 MAX
D1060
1
Rank
L
O
T
No.
1.52
1.27
0.8
3
0.5
1
2
3
1 : Base
2 : Co
l
l
e
ctor
3 : Em
i
t
ter
2.54
2.54
TO-220-3L
Semiconductor Components Industries, LLC, 2013
September, 2013
40412 TKIM TC-00002737/82207FA TIIM TC-00000844/913003TN(KT)/91098HA(KT)/D251MH/4017KI
No.686-1/4
2SD1060
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
0.1
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=40
V
, I
=
0A
mA
mA
CBO
CB
E
I
V
EB
=4
V
, I
=
0A
0.1
EBO
C
h
h
1
2
V
=2
V
, I
=
1A
100*
280*
FE
FE
CE
C
DC Current Ga
i
n
V
CE
=2
V
, I
=
2A
80
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=5
V
, I
=
1A
30
MHz
pF
V
T
CE C
Cob
V
CB
=10
V
,
f
=1MHz
100
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-On Time
V
(
s
at)
I
C
=3
A
, I
=
0.3A
0.3
CE
B
V
I
C
=1m
A
, I
=
0A
60
50
6
V
(
B
R
)
C
BO
E
V
I
C
=1m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =1m
A
,
I
=
0A
E
V
(
B
R
)
EBO
C
t
t
t
0.1
1.4
0.2
s
μ
s
μ
s
μ
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
stg
f
Fa
l
l Ti
m
e
* : The 2SD1060 is classi
fi
ed by 1A h
as follows
FE
Rank
R
S
h
100 to 200
140 to 280
FE
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
PW=20
μ
s
D.C.
≤
1%
OUTPUT
I
B2
INPUT
R
V
B
R
R =
L
10
Ω
50
Ω
+
+
100
μ
F
470
μ
F
V
=
–
–
5V
V
=20V
CC
BE
I =10I
=
–
–
10I
=2A
C B1
B2
I
C
— V
CE
I
— V
C BE
10
10
9
V
=2V
CE
8
8
6
4
7
6
5
4
3
2
2
0
1
0
I =0mA
B
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR08436
Base-to-Emitter
V
o
ltage, V
BE
— V
ITR08438
No.686-2/4
2SD1060
V
CE
(
s
at)
–
– I
C
h
— I
C
FE
1000
10
I
/ I
=10
B
V
=2V
C
CE
7
5
5
3
2
3
2
1.0
5
100
3
2
7
5
0.1
5
3
2
3
2
10
0.01
0.01
2
3
5
2
3
5
2
3
5
2
2
2
0
3
5
2
3
5
2
3
5
2
0.1
1.0
10
ITR08440
0.1
1.0
10
Collector Current, I
–
– A
Collector Current, I
–
– A
V
ITR08442
C
C
V
(
s
at)
–
– I
(
s
at)
–
– I
CE
C
BE C
10
10
I
/ I
=20
B
C
7
5
3
2
5
3
2
1.0
5
3
2
1.0
0.1
7
5
5
3
2
3
2
0.01
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
2
3
5
2
0.1
1.0
10
0.1
1.0
10
Collector Current, I
–
– A
ITR08444
Collector Current, I
–
– A
ITR08446
C
C
A S
O
P
—
T
a
C
2
2.0
1.8
1.75
I
=9A
CP
10
7
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I =5A
C
3
2
1.0
7
5
3
2
0.2
0
1ms to 100ms : Single pulse
5
0.1
7
2
3
5
7
2
3
5
7
20
40
60
80
100
120
140
160
1.0
10
100
Collector-to-Emitter
V
o
ltage, V
— V
ITR08448
Ambient Temperature, Ta
–
–
°
C
IT12873
CE
P
—
T
c
C
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc
–
–
°
C
ITR08449
No.686-3/4
2SD1060
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No.686-4/4
