onsemi-2SD1062R
| Part # | onsemi-2SD1062R |
Download  | onsemi-2SD1062R |
Ordering number : EN723I
PNP / NPN Epitaxial Planar Silicon Transistors
2SB826 / 2SD1062
50V / 12A Switching Applications
Applications
•
Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
•
Low-saturation collector-to-emitter voltage : V
(sat)=
–
-0.5V(PNP), 0.4V(NPN) max.
CE
•
Wide ASO leading to high resistance to breakdown.
Specifications
( )
: 2SB826
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
(
–
–
)60
(
–
–
)50
(
–
–
)6
V
V
I
C
(
–
–
)12
(
–
–
)15
1.75
40
A
Collector Current (Pulse)
I
A
CP
W
W
°
C
°
C
Collector Dissipation
P
C
T
c
=25
°
C
Junction
T
e
mperature
Storage
T
e
mperature
Tj
T
s
tg
150
–
–
55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
=(
–
-)40V, I
=0A
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
V
V
(
–
–
)0.1
(
–
–
)0.1
mA
mA
CBO
CB
EB
E
I
=(
–
–
)4
V
, I
=
0A
C
EBO
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Publication Order Number:
2SB826_2SD1062/D
2SB826 / 2SD1062
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
280*
h
h
1
2
V
V
V
=(
–
-)2V, I
=(
–
–
)1A
70*
30
FE
FE
CE
CE
CE
C
DC Current Gain
=(
–
-)2V, I
=(
–
–
)5A
C
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
f
T
=(
–
-)5V, I
=(
–
–
)1A
10
MHz
V
C
V
CE
(sat)
I
C
I
C
I
C
=(
–
–
)6A, I
=(
–
–
)0.3A
(
–
–
0.5)0.4
B
V
V
V
=(
–
–
)1mA, I
=0A
(
–
–
)60
(
–
–
)50
(
–
–
)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(
–
-)1mA, R
=
∞
BE
V
I =(
–
-)1mA,
I =0A
V
E
C
t
See specified
T
e
st Circuit.
See specified
T
e
st Circuit.
See specified
T
e
st Circuit.
(0.2)0.1
(0.4)1.2
µ
s
µ
s
µ
s
on
Storage Time
t
stg
Fall Time
t
f
(0.1)0.05
*
: The 2SB826 / 2SD1062 are classified by 1A h
as follows :
FE
Rank
Q
R
S
h
70 to 140
100 to 200
140 to 280
FE
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7507-001
I
B1
PW=20
µ
s
t , t
≤
15ns
OUTPUT
4.5
10.2
r
f
I
B2
3.6
5.1
1.3
INPUT
R
1
Ω
V
100
Ω
B
R
R
4Ω
L
50
Ω
+
1µ
F
+
1
µ
F
V
=
–
–
5V
V
=20V
CC
BE
1.2
0.8
I =10I
=
–
–
10I
=5A
B1 B2
For PN
P
,
t
he polarity is reversed.
C
0.4
1
2
3
1 : Base
2 : Collector
3 : Emitter
2.55
2.55
SANYO : TO-220
I
— V
I
— V
C CE
C
CE
–
–
16
–
–
14
–
–
12
–
–
10
–
–
8
16
14
12
10
8
2SB826
2SD1062
80mA
60mA
–
–
6
6
–
–
80mA
–
–
60
–
–
40mA
–
–
20mA
mA
40mA
–
–
4
4
20mA
–
–
2
0
2
0
I =0mA
I =0mA
B
1.0
B
–
–
1.0
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.2
–
–
1.4
0
0.2
0.4
0.6
0.8
1.2
1.4
Collector-to-Emitter
V
o
ltage, V
— V
ITR08461
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR08462
CE
2SB826 / 2SD1062
I
— V
I
— V
C BE
C
BE
–
–
16
16
2SB826
2SD1062
V =2V
CE
V
=
–
–
2V
–
–
14
CE
14
12
10
8
–
–
12
–
–
10
–
–
8
–
–
6
6
–
–
4
4
–
–
2
2
0
0
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
–
–
1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter
V
o
ltage, V
— V
ITR08463
Base-to-Emitter
V
o
ltage, V
BE
— V
ITR08464
BE
h
FE
— I
h
FE
— I
C
C
5
1000
2SB826
2SD1062
7
5
3
2
V
CE
=
–
–
2V
V
CE
=2V
3
2
100
7
100
7
5
5
3
2
3
2
10
7
10
7
5
5
3
2
3
2
0.01
2
2
5
3
5
7
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
3
5
7
2
–
–
0.1
–
–
1.0
–
–
10
0.1
1.0
10
ITR08466
ITR08465
Collector Current, I
–
– A
V
Collector Current, I
–
– A
(sat)
–
–
C
I
V
(sat)
–
–
C
I
CE
CE
C
C
10
7
–
–
10
2SB826
2SD1062
7
5
5
3
2
3
2
1.0
7
–
–
1.0
7
5
5
3
2
3
2
0.1
7
–
–
0.1
5
7
5
3
2
3
2
0.01
3
5
7
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
3
5
7
2
–
–
0.1
–
–
1.0
–
–
10
0.1
1.0
10
Collector Current, I
–
– A
ITR08467
Collector Current, I
–
– A
ITR08468
C
C
A S O
A S O
3
2
3
2
2SB826
2SD1062
I
=
–
–
15A
I
=15A
CP
CP
10
–
–
10
I =
–
–
12A
C
I =12A
C
7
5
7
5
3
2
3
2
–
–
1.0
1.0
7
5
7
5
3
2
3
2
Tc=25
°
C
1ms to 100ms : Single pulse
Tc=25
°
C
1ms to 100ms : Single pulse
–
–
0.1
0.1
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
100
–
–
1.0
–
–
10
–
–
100
1.0
10
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR08469
Collector-to-Emitter
V
o
ltage, V
— V
ITR08470
CE
2SB826 / 2SD1062
P
— Tc
P
— Ta
C
C
2.0
50
2SB826 / 2SD1062
1.8
1.75
40
30
20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
0
0.2
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
IT13046
Case Temperature, Tc
–
–
°
C
ITR08471
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2SB826_2SD1062/D
