onsemi-2SD1190
| Part # | onsemi-2SD1190 |
| Download | onsemi-2SD1190 |
Ordering number:ENN924E
PNP/NPN Epitaxial Planar Silicon Darlington
T
r
anasistors
2SB880/2SD1190
For Various Drivers Applications
Applications
Package Dimensions
unit:mm
· Motor drivers, printer hammer drivers, relay drivers,
voltage regulators.
2010C
[2SB880/2SD1190]
10.2
4.5
Features
3.6
5.1
1.3
· High DC current gain.
· Large current capacity and wide ASO.
· Low saturation voltage.
1.2
0.8
0.4
1
2
3
1 : Base
2 : Collector
3 : Emitter
( ) : 2SB880
2.55
2.55
SANYO : TO-220AB
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
V
(–)70
(–)60
(–)6
(–)4
(–)6
1.75
30
V
V
CBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
V
CEO
V
V
EBO
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
˚C
Collector Dissipation
P
C
Tc=25˚C
Junction Temperature
Storage Temperature
Tj
150
˚C
Tstg
–55 to +150
Electrical Characteristics
at Ta = 25˚C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
Collector Cutoff Current
I
V
V
V
V
=(–)40V, I
=0
(–)0.1
(–)3.0
mA
mA
CBO
CB
EB
CE
CE
E
Emitter Cutoff Current
DC Current Gain
I
=(–)5V, I
=0
C
=(–)2V, I
=(–)2A
C
=(–)5V, I
=(–)2A
C
EBO
h
2000
5000
20
FE
Gain-Bandwidth Product
f
MHz
V
T
0.9 (–)1.5
(–)1.0
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
V
V
I
=(–)2A, I
=(–)4mA
C B
CE(sat)
V
I
=(–)2A, I
=(–)4mA
B
(–)2.0
V
BE(sat)
C
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability,
such as life-support systems,
aircraft’s
control systems,
or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even
momentarily, rated values (such as maximum ratings,
operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd.
Semiconductor Company
TOKYO OFFICE
T
o
kyo Bldg., 1-10, 1 Chome, Ueno,
T
a
ito-ku, TOKYO, 110-8534 JAPAN
D1002AS (KT)/91098HA (KT)/D251MH/4027KI/2033KI, TS
No.924–1/4
2SB880/2SD1190
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V
V
I
I
=(–)5mA, I
=0
E
(–)70
(–)60
V
(BR)CBO
(BR)CEO
C
C
=(–)50mA, R
=
∞
V
BE
(0.5)
0.6
µs
µs
µs
µs
µs
µs
Turn-ON Time
Storage Time
Fall Time
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
on
(1.4)
2.7
t
stg
(1.2)
1.6
t
f
Switching Time Test Circuit
Electrical Connection
C
PW=50
µ
s, Duty Cycle
≤
1%
OUTPUT
500I =
–
–
500I =I
=2A
B1 B2
C
B
TUT
R
B
INPUT
6k
Ω
200
Ω
E
2SB880
R
10
Ω
L
50
Ω
V
R
C
+
+
100
µ
F
470
µ
F
B
V
=
–
–
5V
V
=20V
CC
BE
6k
Ω
200
Ω
(For PN
P
,
t
he polarity is reversed.)
E
2SD1190
I
— V
I
— V
CE
C
CE
C
–
–
5
–
–
4
–
–
3
–
–
2
5
4
3
2
2SB880
2SD1190
From left
8mA
7mA
From top
–
–
10mA
–
–
9mA
–
–
8mA
–
–
7mA
–
–
6mA
–
–
5mA
6mA
5mA
4mA
–
–
1
0
1
0
I =0
B
I =0
B
0
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
0
1
2
3
4
5
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V
CE
– V
ITR08518
ITR08519
I
— V
I
— V
CE
C
CE
C
–
–
4
–
–
3
–
–
2
4
3
2
From top
2SB880
2SD1190
From top
1000
µ
A
900
µ
A
800
µ
A
700
µ
A
–
–
1000
µ
A
–
–
900
µ
A
–
–
800
µ
A
–
–
700
µ
A
–
–
600
µ
A
–
–
500
µ
A
A
300
µ
–
–
1
0
1
0
I =0
B
I =0
B
0
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
0
1
2
3
4
5
Collector-to-Emitter Voltage, V
CE
– V
Collector-to-Emitter Voltage, V
– V
CE
ITR08521
ITR08520
No.924–2/4
2SB880/2SD1190
I
— V
I
— V
C BE
C
BE
–
–
5
–
–
4
–
–
3
–
–
2
5
2SB880
2SD1190
V =2V
CE
V
=
–
–
2V
CE
4
3
2
–
–
1
0
1
0
0
7
7
–
–
0.4
–
–
0.8
–
–
1.2
–
–
1.6
–
–
2.0
– V
–
–
2.4
–
–
2.8
0
7
7
7
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Base-to-Emitter Voltage, V
BE
Base-to-Emitter Voltage, V
– V
BE
ITR08522
ITR08523
h
FE
— I
h
FE
— I
C
C
2
2
2SB880
=
–
–
2V
2SD1190
V
V
=2V
CE
CE
10000
10000
7
5
7
5
3
2
3
2
–
–
40
°
C
1000
1000
7
5
7
5
3
2
3
2
100
100
2
3
5
7
2
3
5
2
3
5
7
2
3
5
–
–
0.1
0.1
0.1
0.1
Collector Current, I
–
–
1.
0
– A
Collector Current,
I
1.
0
– A
C
C
ITR08524
ITR08525
V
(sat)
–
– I
V
(sat)
–
– I
CE C
CE
C
–
–
10
10
2SB880
I /
I =500
C
2SD1190
7
7
5
I
/ I
=500
B
C
B
5
3
2
3
2
–
–
1.0
1.0
25
°
C
7
5
7
5
3
3
2
3
5
7
2
3
5
2
3
5
7
2
3
5
–
–
0.1
Collector Current, I
–
–
1.
0
– A
Collector Current, I
1.
0
– A
C
ITR08526
C
ITR08527
V
(sat)
–
– I
V
(sat)
–
– I
BE C
BE
C
10
–
–
10
2SB880
/ I
=500
2SD1190
I /
I =500
C
7
5
I
7
5
C
B
B
3
2
3
2
1.0
7
5
–
–
1.0
7
5
3
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
–
–
0.1
–
–
10
ITR08528
Collector Curr
e
–
–
1
n
.
t
0
, I
– A
Collector Current, I
1.0
– A
C
C
ITR08529
No.924–3/4
2SB880/2SD1190
A S O
A S O
–
–
10
7
10
7
I =6A
CP
2SB880
2SD1190
I
=–6A
6
CP
6
4
5
5
4
I =4A
3
2
I =–4A
3
2
C
C
–
–
1.0
7
1.0
7
5
5
3
2
3
2
–
–
0.1
0.1
7
7
5
5
3
2
3
2
1ms to 100ms : single pulse
1ms to 100ms : single pulse
60
60
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
–
–
10
–
–
100
ITR08530
10
100
Collector-to-Emitter Voltage, V
– V
ITR08531
CE
Collector-to-Emitter Voltage, V
– V
CE
P
— Ta
P
—
T
c
C
C
2.0
40
30
20
2SB880 / 2SD1190
2SB880 / 2SD1190
1.75
1.6
1.2
0.8
10
0
0.4
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
– ˚C
Case Temperature, Tc
– ˚C
ITR08532
ITR08533
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2002. Specifications and information herein are subject
to change without notice.
PS No.924–4/4
