onsemi-2SD1191

Ordering number:ENN925E  

PNP/NPN Epitaxial Planar Silicon Darlington

T

r

anasistors  

2SB881/2SD1191  

Driver Applications  

Applications  

Package Dimensions  

unit:mm  

· Motor drivers, printer hammer drivers, relay drivers,  

voltage regulator control.  

2010C  

[2SB881/2SD1191]  

10.2  

4.5  

Features  

3.6  

5.1  

1.3  

· High DC current gain.  

· High current capacity and wide ASO.  

· Low saturaion voltage.  

1.2  

0.8  

0.4  

1

2

3

1 : Base  

2 : Collector  

3 : Emitter  

( ) : 2SB881  

2.55  

2.55  

SANYO : TO-220AB  

Specifications  

Absolute Maximum Ratings

at Ta = 25˚C  

Parameter  

Symbol  

Conditions  

Ratings  

Unit  

Collector-to-Base Voltage  

V

(–)70  

(–)60  

(–)6  

(–)7  

(–)10  

1.75  

35  

V

V

CBO  

Collector-to-Emitter Voltage  

Emitter-to-Base Voltage  

Collector Current  

V

CEO  

V

V

EBO  

I

A

C

Collector Current (Pulse)  

I

A

CP  

W

W

˚C  

Collector Dissipation  

P

C

Tc=25˚C  

Junction Temperature  

Storage Temperature  

Tj  

150  

˚C  

Tstg  

–55 to +150  

Electrical Characteristics

at Ta = 25˚C  

Ratings  

Parameter  

Symbol  

Conditions  

Unit  

min  

typ  

max  

Collector Cutoff Current  

I

V

=(–)40V, I

 

=0  

(–)0.1  

(–)3.0  

mA  

mA  

CBO  

CB  

EB  

CE  

CE  

E

Emitter Cutoff Current  

DC Current Gain  

I

V

V

V

=(–)5V, I

 

=0  

C

=(–)2V, I

 

=(–)3.5A  

C

=(–)5V, I

 

=(–)3.5A  

C

EBO  

h

2000  

5000  

20  

FE  

Gain-Bandwidth Product  

f

MHz  

V

T

0.9 (–)1.5  

(–)1.0  

Collector-to-Emitter Saturation Voltage  

Base-to-Emitter Saturation Voltage  

V

V

I

=(–)3.5A, I

 

=(–)7mA  

C B  

CE(sat)  

V

I

=(–)3.5A, I

 

=(–)7mA  

B

(–)2.0  

V

BE(sat)  

C

Continued on next page.  

Any and all SANYO products described or contained herein do not have specifications that can handle  

applications that require extremely high levels of reliability,

 

such as life-support systems,

 

aircraft’s  

control systems,

 

or other applications whose failure can be reasonably expected to result in serious  

physical and/or material damage. Consult with your SANYO representative nearest you before using  

any SANYO products described or contained herein in such applications.  

SANYO assumes no responsibility for equipment failures that result from using products at values that  

exceed, even

 

momentarily, rated values (such as maximum ratings,

 

operating condition ranges,or other  

parameters) listed in products specifications of any and all SANYO products described or contained  

herein.  

SANYO Electric Co.,Ltd.

 

Semiconductor Company  

TOKYO OFFICE

T

o

kyo Bldg., 1-10, 1 Chome, Ueno,

T

a

ito-ku, TOKYO, 110-8534 JAPAN  

D1002AS (KT)/91098HA (KT)/10996TS (KOT) 8-4333/D251MH/4027KI/2033KI, TS

 

No.925–1/4  

2SB881/2SD1191  

Continued from preceding page.  

Ratings  

typ  

Parameter  

Symbol  

Conditions  

Unit  

min  

max  

Collector-to-Base Breakdown Voltage  

Collector-to-Emitter Breakdown Voltage  

V

V

I

I

=(–)5mA, I

 

=0  

E

(–)70  

(–)60  

V

(BR)CBO  

(BR)CEO  

C

C

=(–)50mA, R

 

=

∞

 

V

BE  

(0.5)  

0.6  

µs  

µs  

µs  

µs  

µs  

µs  

Turn-ON Time  

Storage Time  

Fall Time  

t

See specified Test Circuit  

See specified Test Circuit  

See specified Test Circuit  

on  

(1.5)  

3.0  

t

stg  

(1.4)  

1.7  

t

f

Switching Time Test Circuit  

Electrical Connection  

PW=50

µ

s, Duty Cycle

≤

1%  

C

C

500I =

–

–

500I =I

 

=3A  

B1 B2  

C

OUTPUT  

B

B

TUT  

6k

Ω

200

Ω  

6k

Ω

200

Ω  

R

INPUT  

B

E

E

R

L

6.7

Ω

 

2SB881  

2SD1191  

50

Ω  

VR  

+

+

470

µ

F  

100

µ

F  

V

=

–

–

5V  

V

=20V  

CC  

BE  

(For PN

P

,

t

he polarity is reversed.)  

I

— V  

I

— V  

CE  

C

CE  

C

10  

8

–

–

10  

–

–

8  

2SB881  

2SD1191  

From top  

–

–

5.0mA  

–

–

4.5mA  

–

–

4.0mA  

–

–

3.5mA  

–

–

3.0mA  

–

–

2.5mA  

–

–

2.0mA  

From top  

9mA  

8mA  

7mA  

6mA  

6

–

–

6  

5mA  

4mA  

–

–

4  

4

–

–

2  

0

2

0

I =0  

I =0  

B

3

B

0

–

–

1  

–

–

2  

–

–

3  

–

–

4  

–

–

5  

0

1

2

4

5

Collector-to-Emitter Voltage, V  

CE  

– V  

Collector-to-Emitter Voltage, V  

CE  

– V  

ITR08534  

ITR08535  

I

— V  

I

— V  

CE  

C

CE  

C

8

6

4

–

–

5  

–

–

4  

–

–

3  

–

–

2  

2SB881  

From top  

1000

µ

A  

900

µ

A  

800

µ

A  

700

µ

A  

600

µ

A  

500

µ

A  

From top  

–

–

500

µ

A  

–

–

450

µ

A  

–

–

400

µ

A  

–

–

350

µ

A  

–

–

300

µ

A  

2SD1191  

2

0

µ

A  

300  

–

–

1  

0

200

µ  

A

I =0  

I =0  

B

B

4

0

–

–

1  

–

–

2  

–

–

3  

–

–

4  

–

–

5  

ITR08536  

0

1

2

3

5

Collector-to-Emitter Voltage, V  

CE  

– V  

Collector-to-Emitter Voltage, V  

CE  

– V  

ITR08537  

No.925–2/4  

2SB881/2SD1191  

I

— V  

I

— V  

C BE  

C

BE  

–

–

5  

–

–

4  

–

–

3  

–

–

2  

8

2SB881  

2SD1191  

=2V  

V

=

–

–

2V  

V

CE  

CE  

6

4

2

–

–

1  

0

0

2

0

7

7

7

–

–

0.4  

–

–

0.8  

–

–

1.2  

–

–

1.6  

–

–

2.0  

– V  

–

–

2.4  

–

–

2.8  

0

0.4  

0.8  

1.2  

1.6  

2.0  

2.4  

2.8  

Base-to-Emitter Voltage, V  

BE  

Base-to-Emitter Voltage, V  

– V  

ITR08538  

ITR08539  

BE  

h

FE  

— I  

h

FE  

— I  

C

C

2

2SB881  

2SD1191  

V

=

–

–

2V  

V

=2V  

CE  

CE  

10000  

10000  

7

5

7

5

3

2

3

2

1000  

1000  

7

5

7

5

3

2

3

2

100  

100  

2

2

2

3

5

7

2

3

3

3

5

7

7

2

3

5

7

2

3

5

7

–

–

10  

10  

–

–

0.1  

0.1  

0.1  

0.1  

1.0  

Collector Curr

–

e

–

1

n

.

t

0

, I

 

– A  

Collector Current, I

 

– A  

C

C

ITR08540  

ITR08541  

V

(sat)

–

– I  

V

(sat)

–

– I  

CE  

C

CE  

C

–

–

10  

10  

2SB881  

/ I

 

=500  

2SD1191  

/ I

 

=500  

I

7

5

7

I

C

B

C

B

5

3

2

3

2

1.0  

–

–

1.0  

25

°

C  

25

°

C  

7

5

7

5

3

3

3

5

7

2

5

7

7

2

3

5

7

2

3

5

7

–

–

0.1  

–

–

1.0  

–

–

10  

ITR08542  

10  

ITR08543  

Collector Current, I

 

– A  

Collector Curr

1

e

.

n

0

t, I

 

– A  

C

C

V

(sat)

–

– I  

V

(sat)

–

– I  

BE  

C

BE  

C

–

–

10  

10  

2SB881  

/ I

 

=500  

2SD1191  

I /

 

I =500  

C

I

7

5

C

B

B

7

5

3

2

3

2

25

°

C  

1.0  

7

5

–

–

1.0  

7

5

3

3

5

7

2

5

7

7

2

3

5

7

2

3

5

7

–

–

10  

ITR08544  

–

–

0.1  

–

–

1.0  

10  

Collector Current, I

 

– A  

Collector Curr

1

e

.

n

0

t, I

 

– A  

ITR08545  

C

C

No.925–3/4  

2SB881/2SD1191  

A S O  

A S O  

2

2

2SB881  

I

2SD1191  

I

=–10A  

=10A  

CP  

CP  

–

–

10  

7

10  

7

5

I =–7A  

C

5

I =7A  

C

3

2

3

2

–

–

1.0  

7

1.0  

7

5

5

3

2

3

2

–

–

0.1  

0.1  

7

5

7

5

Tc=25

°

C  

1ms to 100ms : single pulse  

Tc=25

°

C  

1ms to 100ms : single pulse  

3

2

3

2

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

6 7  

100  

ITR08547  

–

–

10  

–

–

100  

ITR08546  

10  

Collector-to-Emitter Voltage, V  

– V  

Collector-to-Emitter Voltage, V  

– V  

CE  

CE  

P

—

T

c  

C

36  

35  

2SD881 / 2SD1191  

32  

28  

24  

20  

16  

12  

8

4

0

0

20  

40  

60  

80  

100  

120  

140 150 160  

ITR08548  

Case Temperature, Tc

 

– ˚C  

Specifications of any and all SANYO products described or contained herein stipulate the performance,  

characteristics, and functions of the described products in the independent state, and are not guarantees  

of the performance, characteristics, and functions of the described products as mounted in the customer’s  

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  

the customer should always evaluate and test devices mounted in the customer’s products or equipment.  

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  

semiconductor products fail with some probability. It is possible that these probabilistic failures could  

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  

or that could cause damage to other property. When designing equipment, adopt safety measures so  

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  

circuits and error prevention circuits for safe design, redundant design, and structural design.  

In the event that any or all SANYO products(including technical data,services) described or  

contained herein are controlled under any of applicable local export control laws and regulations,  

such products must not be exported without obtaining the export license from the authorities  

concerned in accordance with the above law.  

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  

mechanical, including photocopying and recording, or any information storage or retrieval system,  

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  

Any and all information described or contained herein are subject to change without notice due to  

product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”  

for the SANYO product that you intend to use.  

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  

no guarantees are made or implied regarding its use or any infringements of intellectual property rights  

or other rights of third parties.  

This catalog provides information as of December, 2002. Specifications and information herein are subject  

to change without notice.  

PS No.925–4/4