onsemi-2SD1816S-TL-E
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2SB1216, 2SD1816
Bipolar Transistor
(
−
)100V, (
−
)4A, Low VCE(sat),
(PNP)NPN Single
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.onsemi.com
Features
•
Low Collector to Emitter Saturation Voltage
•
Small and Slim Package Facilitating Compactness of Sets
ELECTRICAL CONNECTION
•
High f
T
•
Good Linearity of h
FE
2,4
2,4
•
Fast Switching Time
1
1
1 : Base
Typical Applications
•
Suitable for Relay Drivers
•
High Speed Inverters
2 : Collector
3 : Emitter
4 : Collector
3
2SB1216
3
2SD1816
•
Converters
•
Other General High Current Switching Applications
MARKING
SPECIFICATIONS
( )
: 2SB1216
ABSOLUTE MAXIMUM RATING
at Ta = 25
°
C
(Note 1)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
(
−
) 120
Unit
V
B1216
D1816
V
CBO
CEO
EBO
RANK
LOT No.
RANK
LOT No.
V
V
(
−
) 100
(
−
) 6
(
−
) 4
(
−
) 8
V
V
I
I
A
C
Collector Current (Pulse)
A
CP
1
W
W
°
C
°
C
Collector Dissipation
P
C
Tc=25
°
C
20
4
4
Junction Temperature
Storage Temperature
Tj
150
Tstg
−
55 to +150
2
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1
3
1
DPAK / TP-FA
IPAK / TP
2
3
ORDERING INFORM
A
T
ION
See detailed ordering and shipping
information on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
March 2016 – Rev. 2
1
Publication Order Number :
2SB1216_2SD1816/D
2SB1216, 2SD1816
ELECTRICAL CHARACTERISTICS
at Ta
=
25
°
C
(Note 2)
Value
typ
Parameter
Symbol
Conditions
Unit
min
max
(
−
)1
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
V
V
=(
−
)100V, I
=0A
μ
A
μ
A
CBO
EBO
CB
EB
CE
CE
CE
CB
E
=(
−
)4V, I
=0A
(
−
)1
C
h
h
1
2
=(
−
)5V, I
=(
−
)0.5A
140*
400*
FE
FE
C
DC Current Gain
=(
−
)5V,I =(
−
)3A
40
C
Gain-Bandwidth Product
Output Capacitance
f
=(
−
)10V, I
=(
−
)0.5A
(130) 180
(65) 40
MHz
pF
T
C
Cob
=(
−
)10V, f=1MHz
Collector to Emitter Saturation
Voltage
V
V
V
(sat)
I =(
−
)2A, I
=(
−
)0.2A
(
−
200) 150
(
−
500) 400
mV
V
CE
BE
C
B
Base to Emitter Saturation Voltage
(sat)
I =(
−
)2A, I
=(
−
)0.2A
(
−
) 0.9
(
−
) 1.2
C
B
Collector to Base Breakdown
Voltage
I =(
−
)10
μ
A, I
=0A
(
−
)120
V
(BR)CBO
C
E
Collector to Emitter Breakdown
Voltage
V
V
I =(
−
)1mA, R
=
∞
BE
(
−
)100
(
−
) 6
V
(BR)CEO
(BR)EBO
C
Emitter to Base Breakdown Voltage
Turn-On Time
I =(
−
)10
μ
A, I
=0A
V
E
C
100
(800) 900
50
t
t
t
ns
ns
ns
on
See specified Test
Circuit
Storage Time
stg
Fall Time
f
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*:
The 2SB1216/2SD1816 are classified by 0.5A h
as follows:
FE
Rank
S
T
h
140 to 280
200 to 400
FE
Fig.1 Switching Time Test Circuit
2
2SB1216, 2SD1816
PACKAGE DIMENSIONS
unit : mm
IPAK / TP
CASE 369AJ
ISSUE O
1 : Base
2 : Collector
3 : Emitter
4 : Collector
5
2SB1216, 2SD1816
PACKAGE DIMENSIONS
unit : mm
DPAK / TP-FA
CASE 369AH
ISSUE O
1 : Base
2 : Collector
3 : Emitter
4 : Collector
Recommended
Soldering Footprint
7.0
1.5
2.3
2.3
6
2SB1216, 2SD1816
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
2SB1216S-E
2SB1216T-E
2SD1816S-E
B1216
B1216
D1816
IPAK / TP
(Pb-Free)
2SD1816T-E
D1816
B1216
B1216
D1816
D1816
B1216
B1216
D1816
D1816
B1216
B1216
D1816
D1816
500/ bag
2SB1216S-H
2SB1216T-H
IPAK / TP
(Pb-Free / Halogen Free)
2SD1816S-H
2SD1816T-H
2SB1216S-TL-E
2SB1216T-TL-E
2SD1816S-TL-E
2SD1816T-TL-E
2SB1216S-TL-H
2SB1216T-TL-H
2SD1816S-TL-H
2SD1816T-TL-H
DPAK / TP-FA
(Pb-Free)
700/ Tape & Reel
DPAK / TP-FA
(Pb-Free / Halogen Free)
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiarie
s
i
n the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pd
f
.
S
CILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilit
y
o
f its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
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s
i
ntended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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