onsemi-2SD1826
| Part # | onsemi-2SD1826 |
Download  | onsemi-2SD1826 |
Ordering number : EN2210C
S
A
N
Y
O
S
em
i
conductors
DATA S
HEET
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
2SB1224 / 2SD1826
Driver Applications
Applications
•
Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators.
Features
•
High DC current gain.
•
Large current capacity and wide ASO.
•
Micaless package facilitating mounting.
Specifications
( )
: 2SB1224
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
(
–
–
)70
(
–
–
)60
(
–
-)6
(
–
-)7
(
–
–
)10
2.0
V
V
I
A
C
Collector Current (Pulse)
I
A
CP
W
W
°
C
°
C
Collector Dissipation
P
C
T
c
=25
°
C
25
Junction
T
e
mperature
Storage
T
e
mperature
Tj
T
s
tg
150
–
–
55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
=(
–
–
)40
V
, I
=
0A
Unit
min
max
I
V
CB
V
EB
V
CE
(
–
–
)0.1
(
–
–
)3.0
mA
mA
CBO
E
Emitter Cutoff Current
DC Current Gain
I
=(
–
–
)5V, I
=0A
C
EBO
h
FE
=(
–
–
)2V, I
=(
–
–
)3.5A
2000
5000
C
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
“standard application”, intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any “special application” (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
‘
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
‘
s products or
TOKYO OFFICE
T
o
kyo Bldg., 1-10, 1 Chome, Ueno,
T
a
ito-ku, TOKYO, 110-8534 JAPAN
52307IA TI IM TC-00000687 / N2503TN (KT)/92098HA(KT)/80796TS(KOTO) 8-9896/3127
A
T, TS No.2210-1/5
2SB1224 / 2SD1826
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
f
V
=(
–
–
)5V, I
=(
–
-)3.5A
CE
20
MHz
V
T
C
V
V
(sat)
I
C
I
C
I
C
I
C
=(
–
–
)3.5A, I
=(
–
–
)7mA
(
–
-1.0)0.9
(
–
–
)1.5
(
–
–
)2.0
CE
B
(sat)
=(
–
–
)3.5A, I
=(
–
–
)7mA
V
BE
B
V
V
=(
–
–
)5mA, I
=0A
(
–
–
)70
V
(BR)CBO
(BR)CEO
E
=(
–
–
)50mA, R
=
∞
BE
(
–
–
)60
V
t
See specified
T
e
st Circuit.
See specified
T
e
st Circuit.
See specified
T
e
st Circuit.
(0.5)0.6
(1.5)3.0
(1.4)1.7
µ
s
µ
s
µ
s
on
Storage Time
t
stg
Fall Time
t
f
Package Dimensions
unit : mm (typ)
Electrical Connection
7508-002
C
4.5
10.0
2.8
B
3.2
6k
Ω
200
Ω
E
2SB1224
C
1.6
1.2
B
0.75
0.7
6k
Ω
200
Ω
E
2SD1826
1
2
3
1 : Base
2 : Collector
3 : Emitter
2.55
2.55
SANYO : TO-220ML
Switching Time Test Circuit
PW=50
µ
s, Duty Cycle
≤
1
%
OUTPUT
TUT
500I =
–
–
500I =I
=3A
B1 B2
C
R
B
INPUT
R
6.7
Ω
L
50
Ω
V
R
+
+
100
µ
F
470
µ
F
V
=
–
–
5V
V
=20V
BE
CC
(For PN
P
,
t
he polarity is reversed.)
No.2210-2/5
2SB1224 / 2SD1826
I
— V
I
— V
CE
C
CE
C
–
–
10
–
–
8
10
2SD1826
From top
9mA
8mA
7mA
6mA
5mA
4mA
From top
–
–
5.0mA
–
–
4.5mA
–
–
4.0mA
–
–
3.5mA
–
–
3.0mA
–
–
2.5mA
–
–
2.0mA
–
–
1.5mA
2SB1224
8
6
4
–
–
6
–
–
4
–
–
2
0
2
0
I =0
mA
I =0
mA
B
4
B
0
0
0
7
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
0
0
0
7
1
2
3
5
Collector-to-Emitter
V
o
ltage, V
— V
ITR09282
2SB1224
Collector-to-Emitter
V
o
ltage, V
— V
ITR09283
CE
CE
I
— V
I
— V
CE
C
CE
C
–
–
5
–
–
4
–
–
3
–
–
2
8
6
4
2
From top
–
–
500
µ
A
–
–
450
µ
A
–
–
400
µ
A
–
–
350
µ
A
–
–
300
µ
A
–
–
250
µ
A
From top
1000
µ
A
900
µ
A
800
µ
A
700
µ
A
600
µ
A
2SD1826
500
µ
A
–
–
1
0
I =0
µ
A
B
I =0
µ
A
B
–
–
4
0
8
–
–
1
–
–
2
–
–
3
–
–
5
1
2
3
4
5
Collector-to-Emitter
V
o
ltage, V
— V
ITR09284
Collector-to-Emitter
V
o
ltage, V
— V
ITR09285
CE
CE
I
— V
BE
I
— V
C BE
C
–
–
5
–
–
4
–
–
3
–
–
2
2SD1826
2SB1224
V
CE
=2V
V
CE
=
–
–
2V
6
4
2
–
–
1
0
0
2
–
–
0.4
–
–
0.8
–
–
1.2
–
–
1.6
–
–
2.0
–
–
2.4
–
–
2.8
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Base-to-Emitter
V
o
ltage, V
— V
ITR09286
Base-to-Emitter
V
o
ltage, V
— V
ITR09287
BE
BE
h
FE
— I
h
FE
— I
C
C
2
2SB1224
2SD1826
V
CE
=
–
–
2V
V
CE
=2V
10000
10000
7
5
7
5
3
2
3
2
1000
1000
7
5
7
5
3
2
3
2
100
100
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
–
–
0.1
–
–
1.0
–
–
10
0.1
1.0
10
Collector Current, I
–
– A
ITR09288
Collector Current, I
–
– A
ITR09289
C
C
No.2210-3/5
2SB1224 / 2SD1826
V
(sat)
–
– I
V
(sat)
–
– I
CE
C
CE
C
–
–
10
10
2SB1224
2SD1826
7
7
I
/ I
=500
I
/ I
=500
C
B
C
B
5
5
3
2
3
2
–
–
1.0
1.0
25
°
C
25
°
C
7
5
7
5
3
3
7
2
3
5
7
2
3
5
7
7
7
2
0
2
3
5
7
2
3
5
7
–
–
0.1
–
–
1.0
–
–
10
ITR09290
0.1
1.0
10
ITR09291
Collector Current, I
–
– A
Collector Current, I
–
– A
V
(sat)
–
–
C
I
V
(sat)
–
–
C
I
BE
C
BE
C
–
–
10
10
2SB1224
/ I
=500
2SD1826
I
7
5
I
/ I
=500
C
B
7
5
C
B
3
2
3
2
25
°
C
1.0
7
5
–
–
1.0
7
5
3
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
–
–
0.1
–
–
1.0
–
–
10
ITR09292
0.1
1.0
10
Collector Current, I
–
– A
Collector Current, I
–
– A
ITR09293
C
C
A S O
A S O
2
2
2SB1224
Tc=25
°
C
2SD1826
Tc=25
°
C
I
=
–
–
10A
I
=10A
CP
CP
–
–
10
10
7
5
7
5
I =7A
I =
–
–
7A
C
C
3
2
3
2
–
–
1.0
1.0
7
5
7
5
3
2
3
2
–
–
0.1
0.1
7
5
7
5
3
2
3
2
1ms to 100ms : Single pulse
1ms to 100ms : Single pulse
2
3
5
7
2
3
5
7
3
5
7
2
3
5
6 7
–
–
10
–
–
100
10
100
Collector-to-Emitter
V
o
ltage, V
— V
ITR09294
Collector-to-Emitter
V
o
ltage, V
— V
ITR09295
CE
CE
P
— Tc
P
— Ta
C
C
2.4
2.0
1.6
1.2
0.8
28
2SB1224 / 2SD1826
2SB1224 / 2SD1826
25
24
20
16
12
8
0.4
0
4
0
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Case Temperature, Tc
–
–
°
C
Ambient Temperature, Ta
–
–
°
C
ITR09296
ITR09297
No.2210-4/5
2SB1224 / 2SD1826
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No.2210-5/5
