onsemi-2SD1838
| Part # | onsemi-2SD1838 |
Download  | onsemi-2SD1838 |
Ordering number : EN2230C
S
A
N
Y
O
S
em
i
conductors
DATA S
HEET
NPN Triple Diffused Planar Silicon Darlington Transistor
2SD1838
Driver Applications
Applications
•
Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers).
Features
•
High DC current gain.
•
Large current capacity.
•
Wide ASO.
•
On-chip Zener diode of 60
±
10V between collector and base.
•
Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process.
•
High inductive load handling capability.
•
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
50*
50*
6
V
V
I
5
A
C
Collector Current (Pulse)
Base Current
I
8
A
CP
I
B
0.5
2.0
25
150
A
W
W
°
C
°
C
Collector Dissipation
P
C
T
c
=25
°
C
Junction
T
e
mperature
Tj
T
s
tg
Storage
T
e
mperature
–
–
55 to +150
*
: With Zener diode of (60
±
10V).
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
“standard application”, intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any “special application” (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
‘
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
‘
s products or
91008IA TI IM TC-00001592 / 22599TH (KT)/91096TS (KOTO) 8-2061/4277TA, TS No.2230-1/4
2SD1838
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
max
100
I
V
V
V
V
=40
V
, I
=
0A
μ
A
CBO
CB
BE
CE
CE
E
Emitter Cutoff Current
I
=5
V
, I
=
0A
3
mA
EBO
C
DC Current Gain
h
FE
=3
V
, I
=
2.5A
1000
4000
20
C
Gain-Bandwidth Product
f
=5
V
, I
=
2.5A
MHz
V
T
C
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Inductive Load Handling Capability
V
V
(sat)
I
C
I
C
I
C
I
C
=2.5A, I
=5mA
0.9
1.5
2.0
70
CE
B
(sat)
=2.5A, I
=5mA
V
BE
B
V
V
=5mA, I
=0A
50
50
50
60
60
V
(BR)CBO
E
=50mA, R
=
∞
BE
70
V
(BR)CEO
Es/b
L=100mH, R
=100
Ω
mJ
BE
See specified
T
e
st Circuit.
Turn-ON Time
Storage Time
Fall Time
t
0.6
4.0
1.5
μ
s
μ
s
μ
s
on
V
=200V, I
=3.0A, I
=
–
–
I =6mA
CC B1
B2
C
See specified
T
e
st Circuit.
t
stg
V
=200V, I
=3.0A, I
=
–
–
I =6mA
CC C
B1 B2
See specified
T
e
st Circuit.
t
f
V
=200V, I
=3.0A, I
=
–
–
I =6mA
CC C
B1 B2
Package Dimensions
unit : mm (typ)
7508-002
4.5
10.0
2.8
3.2
1.6
1.2
0.75
0.7
1
2 3
1 : Base
2 : Collector
3 : Emitter
2.55
2.55
SANYO : TO-220ML
Specified Test Circuit
Es/b Test Circuit
V
=20
V
, R
=
100
Ω
CC BE
PW=50
μ
s, Duty Cycle
≤
1
%
OUTPUT
TUT
L=100mH
I
B1
=
–
–
I
=6mA
B2
L
+V
CC
TUT
SW
R
INPUT
B
R
L
V
R
I
B
50
Ω
R
BE
6k
Ω
200
Ω
6k
Ω
200
Ω
+
+
100
μ
F
470 F
μ
V
=
–
–
5V
V
=20V
CC
BB
No.2230-2/4
2SD1838
I
C
— V
I
–
–
V
C BE
CE
5
4
3
2
6
5
4
3
2
From top
2000
μ
A
1800
μ
A
1600
μ
A
1400
μ
A
1200
μ
A
V
=3V
CE
1
0
1
0
I =0
μ
A
B
0
5
5
7
1
2
3
4
5
0
5
3
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Collector-to-Emitter
V
o
ltage, V
CE
— V
ITR10062
Base-to-Emitter
V
o
ltage, V
–
– V
ITR10063
BE
h
— I
V
(sat)
–
– I
FE
C
CE C
3
2
2
V
=3V
CE
I
C
/ I
=500
B
10
10000
7
5
7
5
3
2
3
2
1000
7
5
1.0
25
°
C
7
5
3
2
3
100
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
0.1
1.0
10
0.1
1.0
10
Collector Current, I
–
– A
ITR10064
Collector Current, I
–
– A
ITR10065
C
C
V
(sat)
–
– I
A S O
BE
C
2
2
I
/ I
=500
B
C
10
I
=8A
CP
10
7
5
I =5A
C
7
5
3
2
3
2
1.0
7
5
3
2
1.0
7
5
0.1
Tc=25
°
C
1ms to 100ms : single pulse
7
5
3
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
0.1
1.0
10
ITR10066
10
100
Collector-to-Emitter
V
o
ltage, V
— V
ITR10067
Collector Current, I
–
– A
CE
C
Is/b
–
– L
P
— Ta
C
2
2.4
2.0
1.6
1.2
0.8
R
=100
Ω
BE
10
I
CP
7
5
3
2
1.0
7
5
0.4
0
3
2
3
5
7
2
3
5
7
20
40
60
80
100
120
140
160
1.0
10
100
L
–
–
m
H
ITR10068
ITR10069
Ambient Temperature, Ta
–
–
°
C
No.2230-3/4
2SD1838
P
— Tc
C
28
25
24
20
16
12
8
4
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc
–
–
°
C
ITR10070
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification” for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
PS No.2230-4/4
