onsemi-2SK4177-DL-1E
| Part # | onsemi-2SK4177-DL-1E |
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Order
i
n
g number : EN
A
0
869A
2SK4177
N-Channel Power MOSFET
Ω
1500V, 2A, 13
, TO-263-2L
F
e
atures
•
•
ON-resistance R
(on)=10 (typ.)
10V drive
Input capacitance
Ciss=380pF (typ.)
Ω
DS
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
1500
±20
2
D
S
S
V
V
GSS
I
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
I
DP
PW 10 s,
duty cyc
l
e
1
%
4
A
≤
μ
≤
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
P
T
c
=25°C
80
W
°C
°C
mJ
A
D
T
c
h
150
Storage
T
e
mperature
T
s
tg
–
–
55 to +150
A
v
a
l
a
nche Ene
r
g
y
(
S
i
n
g
l
e
P
u
l
s
e)
*
1
A
v
a
l
a
nche Current
*
2
E
41
2
AS
I
AV
Note :
1 V
=50
V
,
L
=20mH, I
=2A (Fig.1)
*
DD
2 L
20mH, single pulse
AV
*
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product &
Package
I
n
f
o
rmat
i
o
n
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
• Package
: TO-263-2L
7535-001
• JEITA, JEDEC
: SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
2S
K
4
177-D
L
–
1E
Pack
i
n
g
T
y
p
e:
D
L
M
a
rk
i
n
g
4.5
10.0
8.0
1.3
4
K
4
177
5.3
L
O
T No.
DL
0.254
0.5
1
2
3
1.27
0.8
El
e
ctr
i
c
al Connect
i
o
n
2.54
2.54
2, 4
1 : Gate
2 : Dr
a
i
n
3 :
S
ource
4 : Dr
a
i
n
1
TO-263-2L
3
Semiconductor Components Industries, LLC, 2013
July, 2013
D0512 TKIM TC-00002833/31208QB TIIM TC-00001270
No. A0869-1/7
2SK4177
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
1500
max
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I =1m
A
,
V
=
0V
D GS
(
B
R
)
D
S
S
I
V
=1200
V
, V
=
0V
DS GS
100
A
A
μ
D
S
S
I
V
=±16
V
, V
=
0V
±10
3.5
μ
GSS
GS DS
V
(
o
f
f)
|
V
=10
V
, I
=
1mA
2.5
0.7
V
GS
yfs
DS D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
n
put Capac
i
t
ance
V
DS
=20
V
, I
=
1A
D
1.4
S
|
R
(
o
n)
I
D
=1
A
, V
=
10V
GS
10
380
70
13
Ω
DS
C
i
s
s
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capac
i
t
ance
Coss
Crss
V
DS
=30
V
,
f
=1MHz
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
40
t
t
t
t
(
o
n)
12
d
r
Ri
s
e
T
i
m
e
37
See F
i
g
.2
T
u
rn-OFF De
l
a
y
T
i
m
e
(
o
f
f)
152
59
d
f
Fa
l
l Ti
m
e
T
o
tal Gate Cha
r
g
e
Qg
37.5
2.7
20
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
DS
=200
V
, V
=
10
V
, I
=
2A
GS
D
V
I =2
A
,
V
=
0V
S GS
0.88
1.2
SD
Fi
g
.1 Unc
l
a
mped
I
n
duct
i
ve
S
w
i
t
ch
i
n
g
T
e
st C
i
r
c
u
i
t
Fi
g
.2 Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V =200V
DD
V
IN
10V
0V
L
D
S
I
=1A
≥
50
Ω
RG
D
V
IN
R =190
Ω
L
G
D
V
OUT
P
W
≤
10
μ
s
D.C.
≤
1%
2S
K
4
177
10V
0V
V
DD
50
Ω
G
2S
K
4
177
P. G
S
50
Ω
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
TO-263-2L
Sh
i
p
p
i
n
g
800pcs./reel
memo
2S
K
4
177-D
L
–
1E
Pb Free
No. A0869-2/7
2SK4177
I
D
— V
I
D
— V
DS
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
3.0
2.5
2.0
1.5
1.0
Tc=25
°
C
pulse
V =20V
DS
pulse
Tc=
–
–
25
°
C
25
°
C
75
°
C
6V
5V
0.5
0
0.5
0
V
=4V
GS
0
0
3
5
2
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source
V
o
ltage, V
— V
IT07130
Gate-to-Source
V
o
ltage, V
GS
— V
IT07131
DS
GS
R
(on)
–
– V
R
(on)
–
– Tc
DS
DS
30
25
20
15
10
30
25
20
15
10
I =1A
V
I
=1A
D
D
=10V
GS
Tc=75
°
C
25
°
C
–
–
25
°
C
5
0
5
0
4
6
8
10
12
14
16
18
20
–
–
50
–
–
25
0
25
50
75
100
125
150
Gate-to-Source
V
o
ltage, V
— V
IT07132
Case Temperature, Tc
–
–
°
C
IT07133
GS
y
fs
–
– I
D
I
— V
SD
S
5
10
7
5
V
=20V
V
=0V
DS
GS
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.01
0.2
0.1
5
7
2
3
5
7
2
3
0.4
0.6
0.8
1.0
1.2
0.1
1.0
Drain Current, I
–
– A
IT07134
IT07135
Diode Forward
V
o
ltage, V
Ciss, Coss, Crss
–
– V
DS
— V
D
SD
SW Time
–
– I
D
5
f=1MHz
V
=200V
=10V
DD
3
2
V
GS
3
2
1000
7
5
100
7
3
2
5
100
7
5
3
2
3
2
t (on)
d
10
0.1
10
0
5
10
15
20
25
30
35
40
45
50
2
3
5
7
2
3
1.0
Drain Current, I
–
– A
IT09038
IT09037
Drain-to-Source
V
o
ltage, V
— V
D
DS
No. A0869-3/7
2SK4177
V
—
Q
g
A S O
GS
10
7
5
10
9
V
=200V
DS
I
=4A(PW
≤
10
μ
s)
DP
I =2A
D
3
2
I
=2A
8
D
7
1.0
7
5
6
5
3
2
4
Operation in this area
is limited by R
(on).
0.1
7
5
DS
3
2
3
2
1
0
Tc=25
°
C
Single pulse
0.01
1.0
0
10
20
30
40
IT07138
2
3
5
7
2
3
5
7
2
3
5
7
2 3
10
100
1k
IT16905
Total Gate Charge, Qg
–
–
n
C
Drain-to-Source
V
o
ltage, V
–
– V
DS
P
— Tc
E
— Ta
D
AS
120
100
80
100
80
60
60
40
40
20
0
20
0
0
25
50
75
100
125
150
175
IT10478
0
20
40
60
80
100
120
140
160
IT12898
Ambient Temperature, Ta
–
–
°
C
Case Temperature, Tc
–
–
°
C
No. A0869-4/7
2SK4177
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
2SK4177-DL-1E
No. A0869-5/7
2SK4177
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
2SK4177-DL-1E
M
a
ss
(
g
)
Un
i
t
Unit: mm
1.5
mm
* For reference
No. A0869-6/7
2SK4177
Note on usage : Since the 2SK4177 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A0869-7/7
