onsemi-30C02SP-AC
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Order
i
n
g number : EN7364B
30C02MH
Bipolar Transistor
(
)
sat NPN
Single MCPH3
30V, 0.7A, Low V
CE
A
p
p
l
i
c
at
i
o
ns
•
Low-frequency Ampli
fi
er, high-speed switching, small motor drive
F
e
atures
•
•
•
•
•
Large current capacity
Low collector-to-emitter saturation voltage (resistance)) : R
(sat) typ=330m
[I =0.7A,
I =35mA]
Ω
CE
Ultrasmall package facilitates miniaturization in end products
C
B
Small ON-resistance (Ron)
Halogen free compliance
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Co
l
l
e
cto
r
–
to-Base
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter
V
o
l
t
age
Em
i
t
te
r
–
to-Base
V
o
l
t
age
Co
l
l
e
ctor Current
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
40
30
CBO
V
V
CEO
V
5
V
EBO
I
C
700
1.4
600
150
mA
A
Co
l
l
e
ctor Current
(
P
u
l
s
e)
Co
l
l
e
ctor
D
i
s
s
i
p
at
i
o
n
I
CP
P
When mounted on ceram
i
c
s
ubstrate
(
6
00mm
2
0.8mm)
mW
×
C
Junct
i
o
n
T
e
mperature
Storage
T
e
mperature
Tj
C
C
°
°
T
s
tg
-55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
: MCPH3
7019A-004
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity
: 3,000 pcs./reel
30C02MH-TL-E
30C02MH-TL-H
0.15
2.0
Pack
i
n
g
T
y
p
e :
T
L
M
a
rk
i
n
g
3
CL
0 to 0.02
TL
1
2
0.65
0.3
El
e
ctr
i
c
al Connect
i
o
n
3
1 : Base
1
2 : Emitter
3 : Collector
2
MCPH3
Semiconductor Components Industries, LLC, 2013
August, 2013
71812 TKIM/60210EA TKIM TC-00002359/O2203 TSIM TA-100141
No.7364-1/6
30C02MH
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
max
100
Co
l
l
e
ctor Cuto
f
f
C
urrent
Em
i
t
ter Cuto
f
f
C
urrent
I
V
=30
V
, I
=
0A
nA
nA
CBO
CB
E
I
V
EB
=4
V
, I
=
0A
100
800
EBO
C
DC Current Ga
i
n
h
V
CE
=2
V
, I
=
50mA
300
FE
C
Ga
i
n
-Bandw
i
d
th P
r
o
duct
Output Capac
i
t
ance
f
V
=10
V
, I
=
50mA
540
3.3
85
MHz
pF
mV
V
T
CE C
Cob
V
CB
=10
V
,
f
=1MHz
Co
l
l
e
cto
r
–
to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Base-to-Em
i
t
ter Saturat
i
o
n
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Base Breakdown
V
o
l
t
age
Co
l
l
e
cto
r
–
to-Em
i
t
ter Breakdown
V
o
l
t
age
Em
i
t
te
r
–
to-Base Breakdown
V
o
l
t
age
T
u
rn-ON Time
V
(
s
at)
(
s
at)
I
C
=200m
A
, I
=
10mA
190
1.2
CE
B
V
I
C
=200m
A
, I
=
10mA
0.9
BE
B
V
I
C
=10
A
,
I
=
0A
40
30
5
V
μ
(
B
R
)
C
BO
E
V
I
C
=1m
A
, R
=
V
∞
(
B
R
)
C
EO
BE
V
I =10
A
,
I
=
0A
E
V
μ
(
B
R
)
EBO
C
t
t
t
35
255
40
ns
on
Storage
T
i
m
e
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
ns
stg
f
Fa
l
l Ti
m
e
ns
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
I
B1
P
W
=20
μ
s
D.C.
≤
1%
OUT
P
U
T
I
B2
IN
P
U
T
R
B
V
R
R
L
50
Ω
+
+
220
μ
F
470
μ
F
V
BE
= –
–
5V
V
CC
=12V
I =20I
=
–
–
20I
=300mA
C B1
B2
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
30C02MH-TL-E
30C02MH-TL-H
Package
Sh
i
p
p
i
n
g
memo
MCPH3
MCPH3
3,000pcs./reel
3,000pcs./reel
Pb Free
Pb Free and Ha
l
o
gen Free
I
— V
BE
I
— V
CE
C
C
700
600
500
400
300
200
800
700
600
500
400
300
200
100
V
=2V
CE
400
μ
A
200
μ
A
100
0
I =0A
B
0
0
0.2
0.4
0.6
0.8
1.0
0
100 200 300 400 500 600 700 800 900
1000
Collector-to-Emitter
V
o
ltage, V
CE
—
m
V
Base-to-Emitter
V
o
ltage, V
BE
— V
IT05083
IT05082
No.7364-2/6
30C02MH
h
— I
V
CE
(
s
at)
–
– I
FE
C
C
1000
1000
I
/ I
=20
B
V
=2V
7
5
C
CE
7
3
2
5
100
7
5
3
2
3
2
10
7
5
3
2
100
1.0
1.0
1.0
2
3
5
7
2
3
5
7
2
2
2
3
5
7
2
2
2
3
3
3
5
5
5
7
2
3
5
7
2
2
2
3
5
7
1000
10
100
1000
10
100
Collector Current, I
–
–
m
A
Collector Current, I
–
–
m
A
C
IT05084
IT05085
C
V
(
s
at)
–
– I
V
(
s
at)
–
– I
CE
C
BE
C
1000
10
I
/ I
=20
B
I
/ I
=50
B
C
C
7
7
5
5
3
2
3
2
1.0
100
7
5
7
5
3
2
3
2
10
1.0
0.1
1.0
2
3
5
7
2
3
5
7
3
5
7
7
2
3
5
7
3
5
7
1000
10
100
1000
IT05086
10
100
Collector Current, I
–
–
m
A
Collector Current, I
–
–
m
A
IT05087
C
CB
C
Cob
–
– V
f
— I
T C
1000
10
f=1MHz
V
=10V
CE
7
7
5
5
3
2
3
2
1.0
1.0
100
1.0
2
3
5
7
3
5
7
2
3
5
7
3
5 7
1000
IT05089
10
10
100
Collector-to-Base
V
o
ltage, V
CB
— V
IT05088
Collector Current, I
–
–
m
A
C
Ron
–
– I
P
—
T
a
B
1k
Ω
C
10
700
600
500
400
300
200
When mounted on ceramic substrate
f=1MHz
7
(600mm
2
×
0.8mm)
OUT
IN
5
1k
Ω
3
2
I
B
1.0
7
5
3
2
100
0
0.1
0.1
2
3
2
3
0
20
40
60
80
100
120
140
160
5
7
5
7
1.0
10
Base Current, I
–
–
m
A
IT06793
Ambient Temperature,
Ta
–
–
°
C
IT05092
B
No.7364-3/6
30C02MH
E
m
bossed
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
30C02MH-TL-E, 30C02MH-TL-H
No.7364-4/6
30C02MH
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
30C02MH-TL-E, 30C02MH-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.007
mm
* For reference
0.4
0.65 0.65
No.7364-5/6
30C02MH
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
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warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
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PS No.7364-6/6
