onsemi-3LN01CPA-TB-E
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Order
i
n
g number : EN6260C
3LN01C
N-Channel Small Signal MOSFET
Ω
30V, 0.15A, 3.7
, Single CP
F
e
atures
•
Low ON-resistance
•
Ultrahigh-speed switching
•
2.5V drive
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
t
o Source
V
o
l
t
age
Gate to Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
30
Unit
V
V
D
S
S
V
±10
V
GSS
I
0.15
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
Storage
T
e
mperature
I
PW 10 s,
duty cyc
l
e
1
%
0.6
A
≤
μ
≤
DP
P
0.25
W
°C
°C
D
T
c
h
150
T
s
tg
–
–
55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Order
i
n
g &
Package
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
Sh
i
p
p
i
n
g
memo
7013A-013
CP
3,000
pcs./
r
e
el
3
L
N01C-TB-E
SC-59,
T
O-236,
SO
T
–
23,
T
O-236
A
B
Pb-Free
2.9
0.1
3
L
N01C-TB-E
3
L
N01C-TB-H
CP
Pb-Free
and
H
a
l
o
gen Free
3
3,000
pcs./
r
e
el
3
L
N01C-TB-H
SC-59,
T
O-236,
SO
T
–
23,
T
O-236
A
B
Pack
i
n
g
T
y
p
e:
T
B
M
a
rk
i
n
g
1
2
0.95
0.4
YA
1 : Gate
TB
2 : Source
3 : Drain
CP
El
e
ctr
i
c
al Connect
i
o
n
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987
No.6260-1/6
3LN01C
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
max
Dr
a
i
n
t
o Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate to Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=1m
A
, V
=
0V
30
(
B
R
)
D
S
S
D
GS
I
V
=30
V
, V
=
0V
1
A
A
μ
D
S
S
DS GS
I
V
=±8
V
, V
=
0V
±10
1.3
μ
GSS
GS DS
V
(
o
f
f)
|
V
=10
V
, I
=
100
A
μ
0.4
V
GS
yfs
DS
D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
=10
V
, I
=
80mA
D
0.15
0.22
2.9
S
|
DS
R
R
R
(
o
n
)
1
(
o
n
)
2
(
o
n
)
3
I
=80m
A
, V
=
4V
3.7
5.2
Ω
DS
DS
DS
D GS
Stat
i
c Dr
a
i
n
t
o Source On-State Res
i
s
tance
I
D
=40m
A
, V
=
2.5V
GS
3.7
Ω
I
D
=10m
A
, V
=
1.5V
GS
6.4
12.8
Ω
I
n
put Capac
i
t
ance
C
i
s
s
7.0
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=10
V
,
f
=1MHz
5.9
DS
2.3
t
t
t
t
(
o
n)
19
d
r
65
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
155
120
1.58
0.26
0.31
0.87
d
f
T
o
tal Gate Cha
r
g
e
Qg
Gate to Source Charge
Gate to Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
DS
=10
V
, V
=
10
V
, I
=
150mA
GS
D
V
SD
I =150m
A
,
V
=
0V
S GS
1.2
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V
=15V
DD
V
IN
4V
0V
I
=80mA
L
D
V
R =187.5
Ω
IN
PW=10
μ
s
D.C.
≤
1%
D
V
OUT
G
3LN01C
P
.
G
50
Ω
S
No.6260-2/6
3LN01C
I
D
— V
DS
I
D
— V
GS
0.30
0.25
0.20
0.15
0.10
0.16
V
=10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
V
=1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
Drain to Source
V
o
ltage, V
DS
— V
IT00029
Gate to Source
V
o
ltage, V
GS
— V
R
(on)
–
– I
R
(on)
–
– V
DS
D
DS
GS
10
7
10
9
Ta=25
°
C
V
=4V
GS
8
7
5
I =80mA
D
Ta=75
°
C
25
°
C
6
5
4
3
2
40mA
3
2
–
–
25
°
C
1
0
1.0
0.01
2
2
2
3
3
3
5
7
2
3
5
7
0
1
2
3
4
5
6
7
8
9
10
0.1
1.0
IT00031
IT00032
Gate to Source
V
o
ltage, V
GS
— V
Drain Current, I
–
– A
D
R
(on)
–
– I
R
(on)
–
– I
DS
D
DS
D
10
100
V
=2.5V
V
=1.5V
GS
GS
7
5
7
5
3
2
Ta=75
°
C
25
°
C
–
–
25
°
C
10
Ta=75
°
C
–
–
25
°
C
3
2
7
5
3
2
25
°
C
1.0
1.0
0.001
2
3
5
7
2
3
5
7
5
7
2
3
5
7
0.01
0.1
1.0
IT00033
0.01
0.1
IT00034
Drain Current, I
–
– A
Drain Current, I
–
– A
D
D
R
(on)
–
– Ta
|
yfs
|
–
– I
DS
D
1.0
7
V
=10V
DS
7
5
6
3
2
5
4
3
2
25
°
C
0.1
7
5
3
2
1
0
0.01
0.01
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
5
7
2
3
5
7
0.1
1.0
Ambient Temperature, Ta
–
–
°
C
Drain Current, I
–
– A
IT00035
IT00036
D
No.6260-3/6
3LN01C
I
S
— V
SD
SW Time
–
– I
D
1.0
1000
V
V
=15V
V
=0V
DD
=4V
GS
7
7
GS
5
5
3
2
3
2
t
f
100
0.1
7
5
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
2
3
5
7
2
0.1
Diode Forward
V
o
ltage, V
SD
— V
Drain Current, I
–
– A
D
IT00038
Ciss, Coss, Crss
–
– V
V
—
Q
g
DS
GS
10
100
V
=10V
f=1MHz
DS
7
9
8
7
I =150mA
D
5
3
2
6
5
4
3
2
1
0
10
Ciss
7
5
Coss
3
2
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT00039
IT00040
Drain to Source
V
o
ltage, V
— V
Total Gate Charge, Qg
–
–
n
C
DS
P
— Ta
D
0.30
0.25
0.20
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
IT00041
No.6260-4/6
3LN01C
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
3LN01C-TB-E, 3LN01C-TB-H
M
a
ss
(
g
)
Un
i
t
0.013
Unit: mm
mm
* For reference
0.8
0.95
0.95
No.6260-5/6
3LN01C
Note on usage : Since the 3LN01C is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No.6260-6/6
