onsemi-6HN04MH-TL-E
| Part # | onsemi-6HN04MH-TL-E |
Download  | onsemi-6HN04MH-TL-E |
Ordering number : ENA0365A
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
6HN04MH
Features
•
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
V
60
±
20
200
800
0.6
DSS
Gate-to-Source Voltage
Drain Current (DC)
V
GSS
I
D
mA
mA
W
Drain Current (Pulse)
Allowable Power Dissipation
Channel
T
e
mperature
Storage
T
e
mperature
I
PW
≤
10
µ
s, duty cycle
≤
1%
When mounted on ceramic substrate (900mm
2
✕
0.8mm)
DP
P
D
T
c
h
150
°
C
°
C
T
s
tg
–
–
55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V
=0V
D GS
60
V
µ
A
µ
A
V
(BR)DSS
I
V
V
V
V
=60
V
, V
=
0V
GS
1
DSS
GSS
DS
GS
DS
DS
I
=
±
16
V
, V
=
0V
DS
±
10
V
(off)
GS
=10
V
, I
=
100
µ
A
1.2
2.6
D
Forward Transfer Admittance
yfs
=10V, I
=100mA
140
240
mS
Ω
D
R
R
(on)1
DS
I
I
=100mA, V
=10V
GS
1.8
2.6
27
2.4
3.7
D
D
Static Drain-to-Source On-State Resistance
(on)2
DS
=50mA, V
=4V
GS
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FB
Ciss
V
V
V
=20
V
,
f
=1MHz
DS
=20
V
,
f
=1MHz
DS
=20
V
,
f
=1MHz
DS
pF
pF
pF
Coss
Crss
8.6
4.4
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Publication Order Number:
6HN04MH/D
6HN04MH
Continued from preceding page.
Ratings
typ
Parameter
Symbol
t (on)
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
See specified
T
e
st Circuit.
See specified
T
e
st Circuit.
See specified
T
e
st Circuit.
See specified
T
e
st Circuit.
13.5
ns
ns
ns
ns
nC
nC
nC
V
d
t
r
11.5
81
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
39
T
o
tal Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
V
V
V
=30V, V
=10V, I
=200mA
GS
1.88
0.4
DS
DS
DS
D
Qgs
Qgd
=30V, V
=10V, I
=200mA
GS
D
=30V, V
=10V, I
=200mA
GS
0.37
0.85
D
V
I =200mA,
V =0V
1.2
SD
S
GS
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7019A-003
V =30V
DD
V
IN
10V
0V
0.15
2.0
3
I
=200mA
D
V
IN
R =150
Ω
L
0 to 0.02
D
V
OUT
PW=10
µ
s
D.C.
≤
1%
R
g
G
1
2
0.65
0.3
6HN04MH
P. G
50
Ω
S
1 : Gate
2 : Source
3 : Drain
R =1.2k
Ω
g
SANYO : MCPH3
I
— V
I
— V
GS
D
DS
D
200
180
160
140
120
100
80
300
250
200
150
100
V =10V
DS
60
40
50
0
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-to-Source
V
o
ltage, V
— V
Gate-to-Source
V
o
ltage, V
GS
— V
IT11264
IT11263
DS
6HN04MH
R
(on)
–
– V
DS GS
R (on)
–
– Ta
DS
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Ta=25
°
C
100mA
I =50mA
D
0.5
0
0.5
0
0
2
4
6
8
10
12
14
16
18
20
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
Gate-to-Source
V
o
ltage, V
GS
— V
IT11265
Ambient Temperature, Ta
–
–
°
C
IT11266
y
fs
–
– I
I
— V
S SD
D
1000
7
5
V =10V
DS
V =0V
GS
7
5
3
2
3
2
100
7
5
0.1
7
3
2
5
10
7
5
3
2
3
2
0.01
1.0
0.4
2
3
5
7
2
3
5
7
2
3
5 7
1000
0.5
0.6
0.7
0.8
0.9
1.0
1.1
IT11268
1.0
10
100
Drain Current, I
–
–
m
A
IT11267
Diode Forward
V
o
ltage, V
–
– V
SD
D
SW Time
–
– I
Ciss, Coss, Crss
–
– V
D
DS
3
7
5
f=1MHz
V
=30V
=10V
DD
2
V
GS
3
2
100
7
5
10
3
2
7
5
t (on)
d
10
3
2
7
5
0.01
2
3
5
7
2
3
5
7
0
5
10
15
20
0.1
1.0
IT11269
Drain Current, I
–
– A
Drain-to-Source
V
o
ltage, V
— V
IT11270
D
DS
V
—
Q
g
A S O
GS
2
10
V
=30V
=200mA
DS
I
=800mA
≤
10
µ
s
DP
1.0
7
5
9
8
7
6
5
4
3
2
I
D
3
2
I =200mA
D
0.1
7
5
3
2
Operation in this
area is limited by R
(on).
0.01
7
5
DS
Ta=25
°
C
3
2
1
0
Single pulse
When mounted on ceramic substrate (900mm
2
✕
0.8mm)
0.001
0.01
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10
100
IT11272
Total Gate Charge, Qg
–
–
n
C
IT11271
Drain-to-Source
V
o
ltage, V
— V
DS
6HN04MH
P
— Ta
D
0.7
0.6
0.5
0.4
0.3
0.2
When mounted on ceramic substrate
(900mm
2
✕
0.8mm)
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta
–
–
°
C
IT11273
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6HN04MH/D
