onsemi-6HP04MH-TL-E
| Part # | onsemi-6HP04MH-TL-E |
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Order
i
n
g number : EN
A
1
039A
6HP04CH
P-Channel Small Single MOSFET
–
–
Ω
60V, 370mA,
4.2 ,
Single CPH3
F
e
atures
•
4V drive
•
Halogen free compliance
•
Protection diode in
Spec
i
fi
c
at
i
o
ns
A
b
so
l
u
te Maximum Rat
i
n
gs
at Ta=25°C
Pa
r
a
meter
Dr
a
i
n
t
o Source
V
o
l
t
age
Gate to Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
–
–
60
Unit
V
V
D
S
S
V
±20
V
GSS
I
–
–
370
mA
mA
W
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
Storage
T
e
mperature
I
PW 10 s,
duty cyc
l
e
1
%
–
–
1480
0.6
≤
μ
≤
DP
P
When mounted on ceram
i
c
s
ubstrate
(
9
00mm
2
0.8mm)
×
D
T
c
h
150
°C
T
s
tg
–
–
55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
–
–
60
max
Dr
a
i
n
t
o Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate to Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I =
–
–
1m
A
,
V
=
0V
D GS
(
B
R
)
D
S
S
I
V
=
–
–
60
V
, V
=
0V
–
–
1
A
A
μ
μ
D
S
S
DS GS
I
V
=±16
V
, V
=
0V
±10
GSS
GS DS
V
(
o
f
f)
|
V
DS
=
–
–
10
V
, I
=
–
–
100
A
–
–
1.2
–
–
2.6
V
μ
GS
yfs
D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
DS
=
–
–
10
V
, I
=
–
–
190mA
D
310
3.1
mS
Ω
|
R
R
(
o
n
)
1
(
o
n
)
2
I
=
–
–
190m
A
, V
=
–
–
10V
D GS
4.2
7.3
DS
DS
Stat
i
c Dr
a
i
n
t
o Source On-State Res
i
s
tance
I
D
=
–
–
100m
A
, V
=
–
–
4V
GS
5.1
Ω
I
n
put Capac
i
t
ance
C
i
s
s
24.1
8.5
pF
pF
pF
ns
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=
–
–
20
V
,
f
=1MHz
DS
4.1
t
t
t
t
(
o
n)
18.4
15.2
113
41
d
r
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
ns
d
f
ns
T
o
tal Gate Cha
r
g
e
Qg
0.84
0.19
0.21
–
–
0.92
nC
nC
nC
V
Gate to Source Charge
Gate to Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=
–
–
30
V
, V
=
–
–
10
V
, I
=
–
–
370mA
GS
DS
D
V
SD
I =
–
–
370m
A
,
V
=
0V
S GS
–
–
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2014
May, 2014
50714 TKIM TC-00003062/20608PE TIIM TC-00001164
No.A1039-1/5
6HP04CH
I
— V
I
— V
D
DS
D
GS
–
–
400
–
–
350
–
–
300
–
–
250
–
–
200
–
–
150
–
–
100
–
–
400
–
–
300
V
=
–
–
10V
DS
-10.0V
–
–
–
200
–
–
100
0
V
=
–
–
3V
–
–
50
0
GS
0
–
–
0.2
–
–
0.6
–
–
1.0
–
–
1.4
–
–
1.6
0
–
–
3
–
–
4
— V
–
–
5
IT17337
D
–
r
–
a
0
i
.
4
n to Source
–
–
V
0
o
.
8
ltage, V
–
–
–
1
–
.2
V
IT17336
—
G
1
ate to So
–
u
–
2
rce
V
o
ltage, V
DS
GS
R
(on)
–
– V
R
(on)
–
– Ta
DS
DS
GS
14
12
10
8
14
12
10
8
Ta=25 C
°
–
–
190mA
6
6
4
4
I
=
–
–
100mA
D
2
0
2
0
—
G
4
ate
–
–
t
6
o Source
V
o
ltage, V
–
–
14
–
– V
GS
0
–
–
2
–
–
8
–
–
10
–
–
12
–
–
16
–
–
18
–
–
20
–
–
60
–
–
40
0
20
40
100
140 160
IT17338
–
–
2
0
Ambient Temper
a
6
t
u
0
re,
8
T
0
a
–
–
°
C
120
IT17339
|
yfs
|
–
– I
I
— V
S SD
D
1000
–
–
1000
V
=0V
V
=
–
–
10V
7
5
7
GS
DS
5
3
2
3
2
100
–
–
100
7
5
7
5
3
2
3
2
–
–
10
10
7
5
7
5
3
2
3
2
1
–
–
1
2
3
5
7
2
3
5
7
2
3
5 7
–
–
1000
0
–
–
0.8
–
–
1.0
— V
–
–
1.2
IT17341
–
–
0.
2
Diode
–
–
F
0
o
.
4
rward
–
V
–
0
o
.
6
ltage, V
–
–
1
–
–
10
–
–
100
Drain Current, I
–
–
m
A
IT17340
D
SD
SW Time
–
– I
Ciss, Coss, Crss
–
– V
D
DS
100
1000
V
V
=
–
–
30V
7
f=1MHz
DD
7
5
5
=
–
–
10V
GS
3
2
3
2
Ciss
100
7
5
3
2
t
f
10
7
5
t
10
r
7
5
3
2
3
2
1
1
2
3
5
7
2
3
5
7
0
–
–
10
–
–
20
–
–
25
— V
–
–
30
IT17343
–
–
5
Drain to Source
V
–
–
1
o
5
ltage, V
–
–
0.1
–
–
1
–
–
10
IT17342
Drain Current, I
–
– A
D
DS
No.A1039-2/5
6HP04CH
S O A
V
—
Q
g
GS
–
–
10
–
–
10
–
–
9
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
7
V
= –
-30V
DS
5
3
I
=
–
–
1480mA
(PW
≤
10
μ
s)
2
DP
–
–
1.0
7
I =
–
–
370mA
D
5
3
2
–
–
0.1
7
5
3
Operation in this area
2
is limited by R
(on).
DS
–
–
0.01
7
Ta=25
°
C
5
Single pulse
3
2
–
–
1
0
When mounted on ceramic substrate
(900mm
2
✕
0.8mm)
–
–
0.001
2
3
5
7
–
–
0.1
2
3
5 7
2
3
5
7
2
3
5 7
–
–
100
IT17345
0
0.2
0.4
0.8
1.0
IT17344
Total Gate Charge,
0
Q
.
6
g
–
–
n
C
–
–
0.01
–
–
1
Drain to Source
V
o
ltage, V
–
–
–
1
–
0
V
DS
P
— Ta
D
0.8
0.7
0.6
0.5
0.4
0.3
0.2
When mounted on ceramic substrate
(900mm
2
✕
0.8mm)
0.1
0
Ambien
6
t
0
Temperatur
e
1
,
0
T
0
a
–
–
1
°
2
C
0
0
20
40
80
140
IT17346
160
No.A1039-3/5
6HP04CH
Package
D
i
m
ens
i
o
ns
6HP04CH-TL-W
CPH3
C
A
S
E 318BA
I
S
S
U
E O
Unit : mm
1: Gate
2: Source
3: Drain
L
a
nd Pattern Examp
l
e
0.6
0.95
0.95
Order
i
n
g &
Package
I
n
f
o
rmat
i
o
n
Pack
i
n
g
T
y
p
e
:
TL
M
a
r
k
i
n
g
D
e
v
i
c
e
Package
Sh
i
p
p
i
n
g
memo
Pb-Free
and
H
a
l
o
gen Free
CPH3, SC-59
SO
T
–
23,
T
O-236
3,000
pcs. /
r
e
el
6HP04CH-T
L
–
W
TL
El
e
ctr
i
c
al Connect
i
o
n
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V
=
–
–
30V
V
3
DD
IN
0V
–
–
10V
I
=
–
–
190mA
D
V
IN
R =154
Ω
L
D
V
OUT
1
PW
≤
10
μ
s
D.C.
≤
1%
Rg
G
2
6HP04CH
P
.
G
50
Ω
S
Rg=5k
Ω
No.A1039-4/5
6HP04CH
Note on usage : Since the 6HP04CH is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No.A1039-5/5
