onsemi-AFGHL40T120RLD
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IGBT for Automotive
Application
1200
V
,
4
0 A
AFGHL40T120RLD
Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust
and cost effective Field Stop II Trench construction. Provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss, which is AEC Q101
qualified offer the optimum performance for both hard and soft
switching topology in automotive application.
V
V
I
C
CE(Sat)
CES
1.75 V (Typ.)
1200 V
40 A
C
Features
•
Extremely Efficient Trench with Field Stop Technology
•
Maximum Junction Temperature: T
= 175
°
C
J
•
Short Circuit Withstand Time 9
m
s
G
•
Low Saturation
V
o
ltage: V
= 1.75 V (Typ.) @ I
= 40 A
C
CE(Sat)
E
LM
•
Fast Switching
•
Tighten Parameter Distribution
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
This Device is Pb
−
Free, Halogen Free/BFR Free and is RoHS
G
Compliant
C
E
TO
−
247
−
3L
Typical Applications
CASE 340CX
•
Automotive HEV
−
EV E
−
Compressor
•
Automotive HEV
−
EV PTC Heater
•
Automotive HEV
−
EV Onboard Chargers
•
Automotive HEV
−
EV DC
−
DC Converters
MARKING DIAGRAM
AFG40T
120RLD
$Y&Z&3&K
AFG40T120RLD
= Specific Device Code
= ON Semiconductor Logo
= Assembly Plant Code
= 3
−
Digit Date Code
$Y
&Z
&3
&K
= 2
−
Digit Lot Traceability Code
ORDERING INFORMATION
Shipping
Device
Package
AFGHL40T120RLD TO
−
247
−
3L 30
Units / Rail
©
Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2021
−
Rev. 1
AFGHL40T120RLD/D
AFGHL40T120RLD
MAXIMUM RATINGS
Description
Symbol
Value
1200
20
Units
Collector to Emitter Voltage
Gate to Emitter Voltage
V
CES
V
GES
V
V
Transient Gate to Emitter Voltage
30
Collector Current @ T
= 25
°
C (Note 1)
I
C
48
A
C
Collector Current @ T
= 100
°
C
40
C
Pulsed Collector Current (Note 3)
I
160
160
48
A
A
A
LM
I
CM
Diode Forward Current @ T
= 25
°
C (Note 1)
I
F
C
Diode Forward Current @ T
= 100
°
C
40
C
Pulsed Diode Maximum Forward Current
I
160
529
264
9
A
FM
Maximum Power Dissipation @ T
= 25
°
C
P
W
C
D
Maximum Power Dissipation @ T
= 100
°
C
C
Short Circuit Withstand Time
SCWT
m
s
V
GE
= 15
V
, V
=
6
00
V
, T
=
1
50
°
C
CE J
Operating Junction
T
e
mperature / Storage
T
e
mperature Range
T
T
−
55 to +175
°
C
°
C
J, STG
Maximum Lead
T
e
mp. For Soldering Purposes,
⅛
” from case for 5 seconds
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Value
limited by bond wire.
2. V
= 600 V, V
= 15 V, I
= 160 A, R
= 15
W
, Inductive Load, 100%
T
e
sted
CC
GE
C
G
3. Repetitive
rating: pulse width limited by max. Junction temperature.
THERMAL CHARACTERISTICS
Rating
Symbol
Max.
0.28
0.47
40
Units
_
C/W
_
C/W
_
C/W
Thermal Resistance, Junction to Case, for IGBT
Thermal Resistance, Junction to Case, Max for Diode
Thermal Resistance, Junction to Ambient, Max
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector
−
emitter Breakdown Voltage,
Gate
−
emitter Short
−
circuited
V
GE
V
GE
V
GE
V
GE
= 0
V
, I
= 1mA
BV
CES
1250
−
1.4
−
−
V
V/
_
C
m
A
C
T
e
mperature Coefficient of Breakdown
Voltage
= 0
V
, I
= 1mA
D
BV
/
−
−
−
−
C
CES
D
T
J
Collector
−
emitter Cut
−
off Current,
Gate
−
emitter Short
−
circuited
= 0
V
, V
= V
I
CES
I
GES
40
400
CE
CES
Gate Leakage Current,
Collector
−
emitter Short
−
circuited
= V
, V
= 0 V
CE
−
nA
GES
ON CHARACTERISTICS
Gate
−
emitter Threshold Voltage
Collector
−
emitter Saturation Voltage
V
= V
, I
= 40
m
A
V
GE(th)
5.3
6.3
7.3
V
V
GE
CE
C
V
GE
V
GE
= 15 V, I
= 40 A
V
CE(sat)
−
−
1.75
2.09
2.1
−
C
= 15 V, I
= 40 A, T
= 175
_
C
C
J
2
AFGHL40T120RLD
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified) (continued)
J
Parameter
DYNAMIC CHARACTERISTICS
Input Capacitance
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
V
CE
= 30
V
, V
= 0 V, f = 1
M
Hz
C
−
−
−
8755
302
−
−
−
pF
GE
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
162
res
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn
−
on Delay Time
Rise Time
T =
25
_
C
Rg = 5
W
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
43
18
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
CC
d(on)
V
= 600
V
, I
=
2
0 A
C
t
r
V
= 15 V
GE
Turn
−
off Delay Time
Fall Time
t
222
53
d(off)
Inductive Load
t
f
Turn
−
on Switching Loss
Turn
−
off Switching Loss
T
o
tal Switching Loss
Turn
−
on Delay Time
Rise Time
E
on
E
off
1.6
0.45
2.05
48
mJ
ns
E
ts
T =
25
_
C
t
t
J
CC
d(on)
V
= 600
V
, I
=
4
0 A
C
t
r
32
Rg = 5
W
V
GE
= 15 V
Turn
−
off Delay Time
Fall Time
208
68
d(off)
Inductive Load
t
f
Turn
−
on Switching Loss
Turn
−
off Switching Loss
T
o
tal Switching Loss
Turn
−
on Delay Time
Rise Time
E
on
E
off
3.4
1.2
4.6
40
mJ
ns
E
ts
T =
175
_
C
t
t
J
CC
d(on)
V
= 600
V
, I
=
2
0 A
C
t
r
20
Rg = 5
W
V
GE
= 15 V
Turn
−
off Delay Time
Fall Time
252
156
2.5
1.08
3.58
44
d(off)
Inductive Load
t
f
Turn
−
on Switching Loss
Turn
−
off Switching Loss
T
o
tal Switching Loss
Turn
−
on Delay Time
Rise Time
E
on
E
off
mJ
ns
E
ts
T =
175
_
C
t
t
J
CC
d(on)
V
= 600
V
, I
=
4
0 A
C
t
r
32
Rg = 5
W
= 15 V
V
GE
Turn
−
off Delay Time
Fall Time
236
164
4.9
2.5
7.4
395
72
d(off)
Inductive Load
t
f
Turn
−
on Switching Loss
Turn
−
off Switching Loss
T
o
tal Switching Loss
T
o
tal Gate Charge
Gate to Emitter Charge
Gate to collector Charge
DIODE CHARACTERISTICS
Forward Voltage
E
on
E
off
mJ
nC
E
ts
V
CE
= 600
V
, I
=
4
0 A, V
= 15 V
Q
g
C
GE
Q
ge
gc
Q
198
I =
40 A, T
= 25
_
C
V
F
−
−
1.51
1.54
2.0
V
F
J
J
I =
40 A, T
= 175
_
C
F
Reverse Recovery Energy
T =
25
_
C
E
−
−
−
0.74
143
−
−
−
mJ
ns
J
R
rec
V
= 600
V
, I
=
2
0 A
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
rr
dI /dt
= 1000 A/
m
s
F
Q
2546
nC
rr
3
AFGHL40T120RLD
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
DIODE CHARACTERISTICS
Reverse Recovery Energy
T =
25
_
C
dI /dt
= 1000 A/
m
s
F
E
−
−
−
−
−
−
−
−
−
1.14
195
−
−
−
−
−
−
−
−
−
mJ
ns
J
R
rec
V
= 600
V
, I
=
4
0 A
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
3761
1.92
212
nC
mJ
ns
rr
T =
175
_
C
E
rec
J
R
V
= 600
V
, I
=
2
0 A
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
dI /dt
= 1000 A/
m
s
F
Q
5242
2.768
286
nC
mJ
ns
rr
T =
175
_
C
E
rec
J
R
V
= 600
V
, I
=
4
0 A
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
rr
dI /dt
= 1000 A/
m
s
F
Q
7321
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4
AFGHL40T120RLD
TYPICAL CHARACTERISTICS
160
120
80
160
V
GE
= 20 V
15 V
12 V
10 V
8 V
V
GE
= 20 V
15 V
12 V
10 V
8 V
120
80
7 V
7 V
40
0
40
0
0
1
2
3
4
5
1
2
3
4
5
0
V
CE
, Drain
−
Source Voltage (V)
V
CE
, Drain
−
Source Voltage (V)
Figure 2. Typical Output Characteristics (175
5
C)
Figure 1. Typical Output Characteristics (25
5
C)
160
3,5
Common Emitter
20 A
25 A
40 A
80 A
V
= 15 V
GE
3
2,5
2
T =
25
°
C
J
120
80
40
0
T =
175
°
C
J
1,5
1
−
100
−
50
0
50
100
150
200
0
1
2
3
4
5
T , Case
T
e
mperature (
°
C)
J
V
CE
, Collector
−
Emitter Voltage (V)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
18
16
14
12
10
8
20
20 A
25 A
40 A
80 A
20 A
25 A
40 A
80 A
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
20
10
20
5
15
0
5
10
15
V
GE
, Gate
−
Emitter Voltage (V)
V
GE
, Gate
−
Emitter Voltage (V)
Figure 5. Saturation Voltage vs. V
GE
(25
5
C)
Figure 6. Saturation Voltage vs. V
GE
(175
5
C)
5
AFGHL40T120RLD
TYPICAL CHARACTERISTICS
(continued)
15,00
V
= 400 V
10000
1000
100
CC
C
ies
12,00
9,00
6,00
500 V
600 V
3,00
0,00
Common Emitter
= 0
V
, f = 1
M
Hz
J
C
C
oes
res
V
GE
T =
25
°
C
0
400
200
Gate Charge (nC)
500
100
300
0,1
10
, Drain to Source Voltage (V)
Q
g,
V
DS
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
1000
100
10
10000
1000
t
25
°
C
t 25
°
C
d(on),
f,
t
t
t , 25
°
C
, 25
°
C
r
d(off)
d(off)
f,
t
, 175
°
C
, 175
°
C
d(on)
t 175
°
C
r,
t 175
°
C
100
10
1
11
21
31
41
51
3
13
23
33
43
53
R ,
Gate Resistance (
W
)
g
R ,
Gate Resistance (
W
)
g
Figure 9. Turn
−
on Characteristics vs. Gate
Figure 10. Turn
−
off Characteristics vs. Gate
Resistance
Resistance
1000
t 25
°
C
r,
t , 175
°
C
r
t
t
, 25
°
C
d(on)
d(on),
200
175
°
C
t 25
°
C
f,
t , 175
°
C
100
10
f
t
t
, 25
°
C
d(off)
d(off),
175
°
C
20
2
22
42
62
0
20
40
60
80
I ,
Collector Current (A)
C
I ,
Collector Current (A)
C
Figure 11. Turn
−
on Characteristics vs. Collector
Figure 12. Turn
−
off Characteristics vs. Collector
Current
Current
6
AFGHL40T120RLD
TYPICAL CHARACTERISTICS
(continued)
10
9
8
7
6
5
4
3
2
1
0
E
on
E
on
E
off
E
off
, 25
°
C
, 175
°
C
, 25
°
C
E
on
E
on
E
off
E
off
, 25
°
C
, 175
°
C
, 25
°
C
12
9
, 175
°
C
, 175
°
C
6
3
0
82
2
42
62
22
0
10
20
30
40
50
I ,
Collector Current (A)
C
R ,
Gate Resistance (
W
)
g
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
1000
100
10
10
m
s
100
100
m
s
1
0,1
0,01
10
1
1 ms
10 ms
DC
0,001
*Note:
0,0001
0,00001
0,000001
0,0000001
1. T
= 25
°
C
25
°
C
175
°
C
75
°
C
C
0
2. T = 175
°
C
j
3. Single Pulse
0
0
0,5
1
1,5
2
2,5
3
1
10
100
1000
10000
V , Forward Voltage (V)
F
V
CE
, Collector
−
Emitter Voltage (V)
Figure 15. SOA Characteristics
Figure 16. Forward Characteristics
650
600
550
500
450
400
350
300
250
200
150
100
50
12000
10000
8000
6000
4000
2000
0
di/dt = 500 A/
m
s_25
°
C
di/dt = 1000 A/
m
s_25
°
C
di/dt = 500 A/
m
s_175
°
C
di/dt = 1000 A/
m
s_175
°
C
di/dt = 500 A/
m
s_25
°
C
di/dt = 1000 A/
m
s_25
°
C
di/dt = 500 A/
m
s_175
°
C
di/dt = 1000 A/
m
s_175
°
C
0
0
20
40
60
80
100
100
20
40
60
80
0
I , Forward Current (A)
F
I , Forward Current (A)
F
Figure 18. Stored Charge
Figure 17. Reverse Recovery Time
7
AFGHL40T120RLD
TYPICAL CHARACTERISTICS
(continued)
1
0.5
0.2
0,1
P
DM
t
1
t
2
0.1
Duty Factor, D = t
/t
Peak T
= Pdm x Z
q
jc + T
1
2
0.05
j
C
R
R
1
2
0.02
0.01
0,01
0,001
i:
ri[K/W]: 0.001841
0.07031 0.08463
0.04473
τ[s]: 6.006E-6
3.359E-4 4.019E-
3 1.42E-2
1
2
3
4
Single
0,00001
0,0001
0,001
0,01
0,1
1
t, Rectangular Pulse Duration
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0,1
0.2
0.1
P
DM
t
1
t
2
0.05
0.02
0.01
Duty Factor, D = t
/t
Peak T
= Pdm x Z
q
jc + T
R
1
2
j
C
R
2
1
Single
0,01
i:
1
2
3
4
ri[K/W]: 0.009712
0.06656 0.1583
0.08883
τ[s]:
1.35E-5
1.019E-4 3.938E-
3 1.883E-2
0,001
0,00001
0,0001
0,001
0,01
0,1
1
t, Rectangular Pulse Duration
Figure 20. Transient Thermal Impedance of Diode
8
AFGHL40T120RLD
Figure 21.
Test Circuit for Switching Characteristics
Figure 22. Definition of Turn On Waveform
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO
−
247
−
3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX =
Specific Device Code
A
Y
= Assembly Location
=
Y
e
ar
WW
G
= Work Week
= Pb
−
Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO
−
247
−
3LD
PAGE 1 OF 1
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