onsemi-AFGHL50T65SQ
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Field Stop
T
rench IGBT
50ꢀA, 650ꢀV
AFGHL50T65SQ
Using the novel field stop 4th generation high speed IGBT
technology. AFGHL5
0
T65SQ which is AEC Q101 qualified offers the
optimum performance for both hard and soft switching topology in
automotive application. It is a stand
−
alone IGBT.
Features
•
AEC
−
Q101 Qualified
50 A, 650 V
•
Maximum Junction Temperature: T
= 175
°
C
J
V
CESat
= 1.6 V
•
Positive Temperature Co
−
efficient for Easy Parallel Operating
•
High Current Capability
C
•
Low Saturation
V
o
ltage: V
= 1.6 V (Typ.) @ I
= 50 A
C
CE(Sat)
LM
•
Fast Switching
•
Tight Parameter Distribution
•
RoHS Compliant
G
E
Typical Applications
•
Automotive HEV
−
EV Onboard Chargers
•
Automotive HEV
−
EV DC
−
DC Converters
•
Totem Pole Bridgeless PFC
•
PTC
G
MAXIMUM RATINGS
C
E
Rating
Symbol Value
Unit
V
TO
−
247
−
3L
CASE 340CX
Collector
−
to
−
Emitter Voltage
V
CES
V
GES
650
Gate
−
to
−
Emitter Voltage
Transient Gate
−
to
−
Emitter Voltage
20
30
V
MARKING DIAGRAM
@ T
= 25
°
C
I
C
80
50
A
C
@ T
= 100
°
C
C
I
200
200
A
A
LM
I
CM
&Z&3&K
AFGHL
50T65SQ
Maximum Power Dissipation
@ T
= 25
°
C
P
268
134
W
C
C
D
@ T
= 100
°
C
Operating Junction
T , T
−
55 to
°
C
°
C
J
STG
/ Storage
T
e
mperature Range
+175
Maximum Lead
T
e
mp. for Soldering
Purposes, 1/8
″
from case for 5 seconds
T
L
300
&Z
&3
&K
= Assembly Plant Code
= 3
−
Digit Date Code
= 2
−
Digit Lot Traceability Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value
limit by bond wire
AFGHL50T65SQ = Specific Device Code
2. V
= 400
V
, V
=
1
5
V
, I
=
2
00 A, R
= 15
W
, Inductive Load
CC
GE
C
G
3. Repetitive
Rating: pulse width limited by max. Junction temperature
ORDERING INFORMATION
Device
Package
Shipping
AFGHL50T65SQ
TO
−
247
−
3L 30
Units / Rail
©
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2020
−
Rev. 1
AFGHL50T65SQ/D
AFGHL50T65SQ
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.56
40
Unit
°
C
/W
°
C
/W
Thermal resistance junction
−
to
−
case, for IGBT
Thermal resistance junction
−
to
−
ambient
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−
emitter breakdown voltage,
gate
−
emitter short
−
circuited
V
C
= 0
V
,
BV
650
−
−
−
V
GE
CES
I
= 1 mA
T
e
mperature Coefficient of
Breakdown Voltage
V
C
= 0
V
,
= 1 mA
−
0.6
V/
°
C
GE
D
BV
D
T
CES
I
J
Collector
−
emitter cut
−
off current,
gate
−
emitter short
−
circuited
V
CE
= 0
V
,
I
−
−
−
−
250
400
m
A
GE
CES
V
= 650 V
Gate leakage current, collector
−
emitter short
−
circuited
V
= 20 V,
= 0 V
I
nA
GE
GES
V
CE
ON CHARACTERISTICS
Gate
−
emitter threshold voltage
Collector
−
emitter saturation voltage
V
= V
, I
= 50 mA
V
GE(th)
3.4
4.9
6.4
V
V
GE
CE
C
V
= 15 V, I
= 50 A
V
CE(sat)
−
−
1.6
1.95
2.1
−
GE
C
V
GE
= 15 V, I
= 50 A, T
= 175
°
C
C
J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V,
GE
C
−
−
−
−
−
−
3209
42
−
−
−
−
−
−
pF
nC
CE
ies
V
= 0
V
,
Output capacitance
C
oes
f = 1 MHz
Reverse transfer capacitance
Gate charge total
C
12
res
V
= 400
V
,
= 50 A,
Q
99
CE
g
I
C
Gate
−
to
−
emitter charge
Gate
−
to
−
collector charge
Q
Q
17
ge
gc
V
= 15 V
GE
23
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn
−
on delay time
Rise time
T
= 25
°
C,
= 400
V
,
= 25 A,
= 4.7
W
,
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
19
11
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
C
d(on)
V
CC
t
r
I
C
R
GE
G
Turn
−
off delay time
Fall time
t
87
d(off)
V
= 15 V,
Inductive Load,
FWD: AFGHL50T65SQD
t
f
5
Turn
−
on switching loss
Turn
−
off switching loss
T
o
tal switching loss
Turn
−
on delay time
Rise time
E
0.35
0.12
0.47
20
mJ
ns
on
off
E
E
ts
T
C
= 25
°
C,
= 400
V
,
= 50 A,
= 4.7
W
,
t
t
d(on)
V
CC
C
G
GE
t
r
28
I
R
V
Turn
−
off delay time
Fall time
81
d(off)
= 15 V,
Inductive Load,
FWD: AFGHL50T65SQD
t
f
36
Turn
−
on switching loss
Turn
−
off switching loss
T
o
tal switching loss
E
0.95
0.46
1.41
mJ
on
off
E
E
ts
2
AFGHL50T65SQ
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (Continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn
−
on delay time
Rise time
T =
175
°
C,
CC
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18
14
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400
V
,
= 25 A,
t
r
I
C
G
R
= 4.7
W
,
Turn
−
off delay time
Fall time
99
d(off)
V
GE
= 15 V,
Inductive Load,
t
f
7
FWD: AFGHL50T65SQD
Turn
−
on switching loss
Turn
−
off switching loss
T
o
tal switching loss
Turn
−
on delay time
Rise time
E
on
E
off
0.66
0.3
0.96
20
mJ
ns
E
ts
T =
175
°
C,
t
t
J
d(on)
V
= 400
V
,
= 50 A,
CC
t
r
29
I
C
R
GE
= 4.7
W
,
G
Turn
−
off delay time
Fall time
88
d(off)
V
= 15 V,
Inductive Load,
FWD: AFGHL50T65SQD
t
f
46
Turn
−
on switching loss
Turn
−
off switching loss
T
o
tal switching loss
E
on
E
off
1.42
0.65
2.07
mJ
E
ts
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
AFGHL50T65SQ
TYPICAL CHARACTERISTICS
200
200
150
100
50
20V
15V
20V
15V
T
C
T
C
= 175
°
C
= 25
°
C
12V
10V
12V
10V
150
100
V
GE
= 8V
V
GE
= 8V
50
0
0
0
1
2
3
4
5
0
1
2
3
4
5
200
20
Collector
−
Emitter Voltage, V
CE
[V]
Collector
−
Emitter Voltage, V
CE
[V]
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
150
100
50
3.0
T
C
= 25
°
C
T
C
Common Emitter
V
GE
= 15V
= 175
°
C
Common Emitter
V
GE
= 15V
100 A
50 A
2.0
1.0
I
C
= 25 A
0
0
1
2
3
4
5
−
100
−
50
0
50
100
150
Collector
−
Emitter Voltage, V
CE
[V]
Collector
−
Emitter Case
T
e
mperature, T
C
[ C]
°
Figure 3. Typical Saturation Voltage
Figure 4. Saturation Voltage vs. Case
Temperature
20
16
12
8
20
16
12
8
Common Emitter
Common Emitter
= 175
°
C
T
C
T
C
= 25
°
C
100A
100A
50A
50A
I
C
= 25A
4
4
0
I
C
= 25A
0
4
8
12
16
20
4
8
12
16
Gate
−
Emitter Voltage, V
GE
[V]
Gate
−
Emitter Voltage, V
GE
[V]
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
4
AFGHL50T65SQ
TYPICAL CHARACTERISTICS
15
V
CC
= 200V
Common Emitter
T
C
= 25
°
C
10000
1000
100
300V
12
9
C
ies
400V
C
oes
6
C
res
10
1
3
0
Common Emitter
V
GE
= 0
V
, f =
1
Mhz
T
C
= 25
°
C
10
Collector
−
Emitter Voltage, V
CE
[V]
1
30
0
20
40
60
80
100
120
Gate Charge, Q
g
[nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge
1000
100
t
r
t
d(off)
100
10
t
f
td
(on)
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 50A
Common Emitter
V
CC
= 400
V
, V
= 15
V
,
GE
I
C
= 50A
T
C
T
C
= 25
°
C
= 175
°
C
T
C
T
C
= 25
°
C
= 175
°
C
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance,
R
g
[
W
]
Gate Resistance, R
g
[
W
]
Figure 9. Turn
−
On Characteristics vs. Gate
Figure 10. Turn
−
Off Characteristics vs. Gate
Resistance
Resistance
200
100
Common Emitter
V
CC
= 400V, V
GE
= 15V,
R
G
= 4.7
W
t
f
T
C
T
C
t
r
= 25
°
C
= 175
°
C
100
t
d(off)
t
d(on)
10
Common Emitter
V
CC
= 400V, V
GE
= 15V,
R
G
= 4.7
W
T
C
T
C
= 25
°
C
= 175
°
C
1
10
0
25
50
75
100
125
150
10
35
60
85
110
135
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Figure 11. Turn
−
On Characteristics vs.
Figure 12. Turn
−
Off Characteristics vs.
Collector Current
Collector Current
5
AFGHL50T65SQ
TYPICAL CHARACTERISTICS
10
10
E
on
E
on
1
1
E
off
Common Emitter
Common Emitter
V
CC
= 400V, V
GE
= 15V,
I
C
= 50A
V
CC
= 400
V
, V
GE
= 15
V
,
E
off
R
G
= 4.7
W
T
C
= 25
°
C
T
C
= 175
°
C
T
C
T
C
= 25
°
C
= 175
°
C
0.1
0.1
0
10
20
30
40
50
0
25
50
75
100
125
150
Gate Resistance,
R
g
[
W
]
Collector Current,
I
C
[A]
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector
Current
300
DC
m
s
10
100
m
s
100
1ms
10
10ms
1
*Notes:
1. T
C
2. T
J
= 25
°
C
= 175
°
C
3. Single Pulse
0.1
1
10
100
1000
Collector
−
Emitter Voltage, V
CE
[V]
Figure 15. SOA Characteristics
1
0.5
0.2
0.1
0.1
Notes:
Duty Factor, D = t
/t
Peak T
= P
0.05
P
DM
1
x Z
2
0.02
0.01
(t) + T
JC C
q
J
DM
t
1
t
2
Single Pulse
0.01
−
5
−
4
−
3
−
2
−
1
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 16. transient Thermal Impedance of IGBT
6
AFGHL50T65SQ
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