onsemi-ATP101-TL-H
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Order
i
n
g number : EN
A
1
646A
ATP101
P-Channel Power MOSFET
–
–
Ω
30V, 25A,
30m ,
Single ATPAK
F
e
atures
•
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
•
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
–
–
30
Unit
V
V
D
S
S
V
±20
V
GSS
I
–
–
25
A
D
Dr
a
i
n
C
urrent
(
P
W
10 s)
I
DP
PW 10 s,
duty cyc
l
e
1
%
–
–
75
A
≤
μ
≤
μ
≤
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
P
T
c
=25 C
30
W
°C
°C
mJ
A
°
D
T
c
h
150
Storage
T
e
mperature
T
s
tg
–
–
55 to +150
25
A
v
a
l
a
nche Ene
r
g
y
(
S
i
n
g
l
e
P
u
l
s
e)
*
1
A
v
a
l
a
nche Current
*
2
E
AS
I
AV
–
–
13
Note :
1 V
= 10
V
,
L
=200 H,
I =
13A
— —
*
μ
DD
2 L
200 H,
Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
:
A
T
P
A
K
7057-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
A
T
P
101-
T
L
–
H
1.5
Pack
i
n
g
T
y
p
e:
T
L
M
a
rk
i
n
g
6.5
4.6
2.6
0.4
0.4
A
T
P
101
4
L
O
T No.
TL
El
e
ctr
i
c
al Connect
i
o
n
4,2
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Dr
a
i
n
0.4
2.3
2.3
1
3 :
S
ource
4 : Dr
a
i
n
3
AT
P
A
K
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/12710
P
A
T
KIM TC-00002233
No. A1646-1/7
A
T
P
101
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
–
–
30
max
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=
–
–
1m
A
, V
=
0V
(
B
R
)
D
S
S
D GS
I
V
V
=
–
–
30
V
, V
=
0V
–
–
1
A
A
μ
D
S
S
DS
GS
I
=±16
V
, V
=
0V
DS
±10
μ
GSS
GS
V
(
o
f
f)
|
V
=
–
–
10
V
, I
=
–
–
1mA
–
–
1.2
–
–
2.6
V
GS
yfs
DS D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
I
=
–
–
10
V
, I
=
–
–
13A
D
17
S
|
DS
R
R
(
o
n
)
1
(
o
n
)
2
=
–
–
13
A
, V
=
–
–
10V
GS
23
36
30
51
m
Ω
Ω
DS
DS
D
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=
–
–
7
A
, V
=
–
–
4.5V
GS
m
I
n
put Capac
i
t
ance
C
i
s
s
875
220
155
9.2
pF
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=
–
–
10
V
,
f
=1MHz
pF
pF
ns
DS
t
t
t
t
(
o
n)
d
r
70
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
80
ns
d
f
70
ns
T
o
tal Gate Cha
r
g
e
Qg
18.5
3.2
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=
–
–
15
V
, V
=
–
–
10
V
, I
=
–
–
25A
GS
DS
D
4.0
V
SD
I =
–
–
25
A
,
V
=
0V
S GS
–
–
0.99
–
–
1.5
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V =
–
–
15V
DD
V
IN
0V
–
–
10V
I
= –
–
13A
D
V
IN
R =1.15
Ω
L
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
G
A
T
P
101
P. G
50
Ω
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
A
T
PAK
Sh
i
p
p
i
n
g
3,000pcs./reel
memo
A
T
P
101-
T
L
–
H
Pb Free and Ha
l
o
gen Free
No. A1646-2/7
A
T
P
101
I
D
— V
DS
I
— V
D GS
–
–
25
–
–
20
–
–
15
–
–
10
–
–
30
–
–
25
–
–
20
–
–
15
–
–
10
Tc=25
°
C
V
=
–
–
10V
DS
Single pulse
–
–
5
0
–
–
5
0
0
–
–
0.5
–
–
1.0
–
–
1.5
–
–
2.0
0
–
–
0.5
–
–
1.0
–
–
1.5
–
–
2.0
–
–
2.5
–
–
3.0
–
–
3.5
–
–
4.0
–
–
4.5
–
–
5.0
IT15313
Drain-to-Source
V
o
ltage, V
DS
— V
IT15312
Gate-to-Source
V
o
ltage, V
–
– V
GS
R
(
o
n)
–
– V
R
(
o
n)
–
–
T
c
DS
GS
DS
80
70
60
50
40
30
20
80
70
60
50
40
30
Single pulse
Tc=25
°
C
Single pulse
I
=
–
–
7A
D
–
–
13A
20
10
10
0
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
–
–
6
–
–
7
–
–
8
–
–
9
–
–
10
–
–
11
–
–
12
–
–
13
–
–
14
–
–
15
–
–
16
Gate-to-Source
V
o
ltage, V
— V
IT15314
Case Temperature, Tc
–
–
°
C
IT15315
GS
|
y
fs
|
— I
I
S
— V
SD
D
7
5
3
2
5
V
=0V
V
=
–
–
10V
DS
GS
Single pulse
3
2
–
–
10
7
5
3
2
10
–
–
1.0
7
7
5
5
3
2
–
–
0.1
3
2
7
5
3
2
–
–
0.01
7
1.0
5
3
2
7
–
–
0.001
5
2
3
5
7
2
3
5
7
–
–
10
2
3
5
7
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
–
–
1.4
IT15317
–
–
0.1
–
–
1.0
Diode Forward
V
o
ltage, V
SD
— V
Drain Current, I
–
– A
IT15316
D
SW
T
i
m
e
–
– I
C
i
s
s, Coss, Crss
–
– V
D
DS
3
3
2
V
=
–
–
15V
f=1MHz
DD
2
V =
–
–
10V
GS
100
1000
7
5
7
5
t
f
3
2
3
2
t (on)
10
d
100
7
5
7
2
3
5
7
2
3
5
7
–
–
10
2
3
5
7
0
–
–
5
–
–
10
–
–
15
–
–
20
–
–
25
–
–
30
IT15319
–
–
0.1
–
–
1.0
Drain Current, I
–
– A
IT15318
Drain-to-Source
V
o
ltage, V
–
– V
DS
D
No. A1646-3/7
A
T
P
101
A S
O
V
GS
—
Q
g
2
–
–
10
–
–
9
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
V
=
–
–
15V
DS
=
–
–
25A
I
=
–
-75A
–
–
100
PW
≤
10
μ
s
DP
I
D
7
5
3
2
I
=
–
-25A
D
–
–
10
7
5
3
2
Operation in
this area is
limited by R
(on).
–
–
1.0
DS
7
5
3
2
–
–
1
0
Tc=25
°
C
Single pulse
–
–
0.1
–
–
0.1
2
3
5
7
2
3
5
7
2
3
5
0
2
4
6
8
10
12
14
16
18
20
–
–
1.0
–
–
10
Total Gate Charge, Qg
–
–
n
C
IT15320
Drain-to-Source
V
o
ltage, V
DS
— V
IT15321
P
—
T
c
E
—
T
a
D
AS
35
30
25
20
15
10
120
100
80
60
40
20
0
5
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT10478
IT15322
Ambient Temperature, Ta
–
–
°
C
Case Temperature, Tc
–
–
°
C
No. A1646-4/7
A
T
P
101
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
A
T
P101-TL-H
No. A1646-5/7
A
T
P
101
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
A
T
P101-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1646-6/7
A
T
P
101
Note on usage : Since the
A
T
P101 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A1646-7/7
