onsemi-ATP102-TL-H
| Part # | onsemi-ATP102-TL-H |
Download  | onsemi-ATP102-TL-H |
Order
i
n
g number : EN
A
1
479A
ATP102
P-Channel Power MOSFET
–
–
Ω
30V, 40A,
18.5m ,
Single ATPAK
F
e
atures
•
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
•
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
–
–
30
Unit
V
V
D
S
S
V
±20
V
GSS
I
–
–
40
A
D
Dr
a
i
n
C
urrent
(
P
W
10 s)
I
PW 10 s,
duty cyc
l
e
1
%
–
–
120
40
A
≤
μ
≤
μ
≤
DP
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
P
T
c
=25 C
W
°C
°C
mJ
A
°
D
T
c
h
150
Storage
T
e
mperature
T
s
tg
–
–
55 to +150
58
A
v
a
l
a
nche Ene
r
g
y
(
S
i
n
g
l
e
P
u
l
s
e)
*
1
A
v
a
l
a
nche Current
*
2
E
AS
I
AV
20
Note :
1 V
=10
V
,
L
=200
H, I
=20A
*
μ
DD
2 L
200 H,
Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
:
A
T
P
A
K
7057-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
A
T
P
102-
T
L
–
H
1.5
Pack
i
n
g
T
y
p
e:
T
L
M
a
rk
i
n
g
6.5
4.6
2.6
0.4
0.4
A
T
P
102
4
L
O
T No.
TL
El
e
ctr
i
c
al Connect
i
o
n
4,2
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Dr
a
i
n
0.4
2.3
2.3
1
3 :
S
ource
4 : Dr
a
i
n
3
AT
P
A
K
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/52709
P
A
M
SIM TC-00001968
No. A1479-1/7
A
T
P
102
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
V
m
i
n
–
–
30
max
Dr
a
i
n
-to-Source Breakdown
V
o
l
t
age
Z
e
r
o
-Gate
V
o
l
t
age Dra
i
n
C
urrent
Gate-to-Source
L
e
akage Current
Cuto
f
f
V
o
l
t
age
V
I
=
–
–
1m
A
, V
=
0V
(
B
R
)
D
S
S
D GS
I
V
V
=
–
–
30
V
, V
=
0V
–
–
1
A
A
μ
D
S
S
DS
GS
I
=±16
V
, V
=
0V
DS
±10
μ
GSS
GS
V
(
o
f
f)
|
V
=
–
–
10
V
, I
=
–
–
1mA
–
–
1.2
–
–
2.6
V
GS
yfs
DS D
Forward
T
r
a
ns
f
e
r
A
d
m
i
t
tance
V
I
=
–
–
10
V
, I
=
–
–
20A
D
29
S
|
DS
R
R
(
o
n
)
1
(
o
n
)
2
=
–
–
20
A
, V
=
–
–
10V
GS
14
22
18.5
31
m
Ω
Ω
DS
DS
D
Stat
i
c Dr
a
i
n
-to-Source On-State Res
i
s
tance
I
D
=
–
–
10
A
, V
=
–
–
4.5V
GS
m
I
n
put Capac
i
t
ance
C
i
s
s
1490
360
270
11
pF
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=
–
–
10
V
,
f
=1MHz
pF
pF
ns
DS
t
t
t
t
(
o
n)
d
r
135
135
185
34
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
ns
d
f
ns
T
o
tal Gate Cha
r
g
e
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
DS
=
–
–
15
V
, V
=
–
–
10
V
, I
=
–
–
40A
GS
4.2
D
11.5
–
–
0.99
V
SD
I =
–
–
40
A
,
V
=
0V
S GS
–
–
1.5
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V =
–
–
15V
DD
V
IN
0V
–
–
10V
I
= –
–
20A
D
V
IN
R =0.75
Ω
L
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
G
A
T
P
102
P. G
50
Ω
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
A
T
PAK
Sh
i
p
p
i
n
g
3,000pcs./reel
memo
A
T
P
102-
T
L
–
H
Pb Free and Ha
l
o
gen Free
No. A1479-2/7
A
T
P
102
I
D
— V
DS
I
— V
D GS
–
–
40
–
–
35
–
–
30
–
–
25
–
–
20
–
–
15
–
–
10
–
–
50
–
–
45
–
–
40
–
–
35
–
–
30
–
–
25
–
–
20
–
–
15
–
–
10
V
=
–
–
10V
DS
Single pulse
–
–
5
0
Tc=25
°
C
Single pulse
–
–
5
0
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
–
–
1.4
–
–
1.6
–
–
1.8
–
–
2.0
0
–
–
0.5
–
–
1.0
–
–
1.5
–
–
2.0
–
–
2.5
–
–
3.0
–
–
3.5
–
–
4.0
–
–
4.5
–
–
5.0
IT14688
Drain-to-Source
V
o
ltage, V
DS
— V
IT14687
Gate-to-Source
V
o
ltage, V
–
– V
GS
R
(
o
n)
–
– V
R
(
o
n)
–
–
T
c
DS
GS
DS
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
Single pulse
Tc=25
°
C
Single pulse
I
=
–
–
10A
D
–
–
20A
5
0
10
5
–
–
60
–
–
40
–
–
20
0
20
40
60
80 100
120 140 160
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
–
–
6
–
–
7
–
–
8
–
–
9
–
–
10
–
–
11
–
–
12
–
–
13
–
–
14
–
–
15
–
–
16
Gate-to-Source
V
o
ltage, V
GS
— V
IT14689
Case Temperature, Tc
–
–
°
C
IT14690
|
y
fs
|
— I
I
— V
D
S
S
D
–
–
100
7
5
7
V
=
–
–
10V
V
=0V
DS
GS
Single pulse
5
3
2
Single pulse
3
2
–
–
10
7
5
3
2
–
–
1.0
10
7
5
7
5
3
2
–
–
0.1
7
5
3
2
3
2
–
–
0.01
7
5
3
2
1.0
–
–
0.001
–
–
0.3
–
–
0.4
–
–
0.5
–
–
0.6
–
–
0.7
–
–
0.8
–
–
0.9
–
–
1.0
–
–
1.1
–
–
1.2
7
2
3
5
7
2
3
5
7
2
3
5
7
–
–
0.1
–
–
1.0
–
–
10
–
–
100
Diode Forward
V
o
ltage, V
SD
— V
Drain Current, I
–
– A
IT14691
IT14692
D
SW
T
i
m
e
–
– I
C
i
s
s, Coss, Crss
–
– V
D
DS
7
5
V
V
=
–
–
15V
f=1MHz
DD
=
–
–
10V
5
GS
3
2
3
2
1000
t
f
100
7
5
7
5
3
2
3
2
t (on)
d
100
10
7
7
2
3
5
7
2
3
5
7
2
3
5
7
0
–
–
5
–
–
10
–
–
15
–
–
20
–
–
25
–
–
30
IT14694
–
–
0.1
–
–
1.0
–
–
10
–
–
100
Drain Current, I
–
– A
IT14693
Drain-to-Source
V
o
ltage, V
DS
— V
D
No. A1479-3/7
A
T
P
102
A S
O
V
GS
—
Q
g
3
2
–
–
10
–
–
9
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
V
I
=
–
–
15V
DS
=
–
–
40A
I
=
–
-120A
PW
≤
10
μ
s
DP
D
–
–
100
7
5
I
=
–
-40A
D
3
2
–
–
10
7
5
Operation in
this area is
3
2
limited by R
(on).
DS
–
–
1.0
7
5
3
–
–
1
0
2
Tc=25
°
C
Single pulse
–
–
0.1
–
–
0.1
2
3
5
7
2
3
5
7
–
–
10
2
3
5
0
5
10
15
20
25
30
35
40
–
–
1.0
Total Gate Charge, Qg
–
–
n
C
IT14695
Drain-to-Source
V
o
ltage, V
DS
— V
IT14696
P
—
T
c
E
—
T
a
D
AS
45
40
35
30
25
20
15
10
120
100
80
60
40
20
0
5
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT10478
IT14697
Ambient Temperature, Ta
–
–
°
C
Case Temperature, Tc
–
–
°
C
No. A1479-4/7
A
T
P
102
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
A
T
P102-TL-H
No. A1479-5/7
A
T
P
102
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
A
T
P102-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1479-6/7
A
T
P
102
Note on usage : Since the
A
T
P102 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1479-7/7
