onsemi-ATP113-TL-H
| Part # | onsemi-ATP113-TL-H |
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Order
i
n
g number : EN
A
1
755A
ATP113
P-Channel Power MOSFET
–
–
Ω
60V, 35A,
29.5m ,
Single ATPAK
F
e
atures
•
•
•
ON-resistance R
(on)1=22.5m (typ.)
4V drive
Protection diode in
Input Capacitance
Ciss=2400pF(typ.)
Halogen free compliance
Ω
DS
•
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
–
–
60
±20
–
–
35
–
–
105
50
D
S
S
V
V
GSS
I
A
D
Dr
a
i
n
C
urrent
(
P
W
10 s)
I
PW 10 s,
duty cyc
l
e
1
%
A
≤
μ
≤
μ
≤
DP
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
P
T
c
=25 C
W
°C
°C
mJ
A
°
D
T
c
h
150
Storage
T
e
mperature
T
s
tg
–
–
55 to +150
A
v
a
l
a
nche Ene
r
g
y
(
S
i
n
g
l
e
P
u
l
s
e)
*
1
A
v
a
l
a
nche Current
*
2
E
95
AS
I
–
–
18
AV
—
—
AV
Note :
1 V
= 10
V
,
L
=500 H,
I =
18A
*
μ
DD
2 L
500 H,
Single pulse
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
:
A
T
P
A
K
7057-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
A
T
P
113-
T
L
–
H
1.5
6.5
4.6
2.6
Pack
i
n
g
T
y
p
e:
T
L
M
a
rk
i
n
g
0.4
0.4
4
A
T
P
113
L
O
T No.
TL
El
e
ctr
i
c
al Connect
i
o
n
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Dr
a
i
n
3 :
S
ource
4 : Dr
a
i
n
1
AT
P
A
K
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/72110PA TKIM TC-00002330
No. A1755-1/7
A
T
P
113
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
–
–
60
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=
–
–
1mA, V
=0V
V
μ
A
μ
A
V
(BR)DSS
D
GS
=
–
–
60V, V
=0V
I
I
V
V
V
V
— 1
DSS
DS
GS
DS
DS
GS
=±16
V
, V
=
0V
DS
±10
GSS
V
(off)
GS
=
–
–
10V, I
=
–
–
1mA
–
–
1.2
–
–
2.6
D
Forward Transfer Admittance
|
yfs
|
=
–
–
10V, I
=
–
–
18
A
37
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=
–
–
18A, V
=
–
–
10V
GS
22.5
27
29.5
38
m
Ω
m
Ω
m
Ω
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=
–
–
9A, V
=
–
–
4.5V
GS
=
–
–
5A, V
=
–
–
4V
GS
29
44
I
n
put Capac
i
t
ance
C
i
s
s
2400
250
195
15
Output Capac
i
t
ance
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
Ri
s
e
T
i
m
e
Coss
Crss
V
=
–
–
20
V
,
f
=1MHz
DS
t
t
t
t
(
o
n)
d
r
125
250
200
55
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
Fa
l
l Ti
m
e
(
o
f
f)
ns
d
f
ns
T
o
tal Gate Cha
r
g
e
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=
–
–
30
V
, V
=
–
–
10
V
, I
=
–
–
35A
GS
7.5
DS
D
12
V
SD
I =
–
–
35
A
,
V
=
0V
GS
–
–
0.98
–
–
1.5
S
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
V =
–
–
30V
DD
V
IN
0V
–
–
10V
I
=18A
D
V
IN
R =1.67
Ω
L
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
G
A
T
P
113
P. G
50
Ω
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
A
T
PAK
Sh
i
p
p
i
n
g
3,000pcs./reel
memo
A
T
P
113-
T
L
–
H
Pb Free and Ha
l
o
gen Free
No. A1755-2/7
A
T
P
113
I
D
— V
DS
I
— V
D GS
–
–
35
–
–
30
–
–
25
–
–
20
–
–
15
–
–
10
–
–
60
–
–
50
–
–
40
–
–
30
–
–
20
Tc=25
°
C
Single pulse
V
=
–
–
10V
DS
Single pulse
–
–
10
0
–
–
5
0
–
–
1.0
–
–
1.5
–
–
2.0
–
–
2.5
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
–
–
1.4
–
–
1.6
–
–
1.8
–
–
2.0
0
–
–
0.5
–
–
3.0
–
–
3.5
–
–
4.0
–
–
4.5
Drain-to-Source
V
o
ltage, V
DS
— V
Gate-to-Source
V
o
ltage, V
— V
IT15601
IT15602
GS
R
(
o
n)
–
– V
R
(
o
n)
–
–
T
c
DS
GS
DS
70
60
50
40
30
70
60
50
40
30
20
Tc=25
°
C
Single pulse
Single pulse
I
=
–
–
18A
D
–
–
9A
–
–
5A
20
10
10
0
–
–
50
–
–
25
0
25
50
75
100
125
150
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
–
–
6
–
–
7
–
–
8
–
–
9
–
–
10
–
–
11
–
–
12
–
–
13
–
–
14
–
–
15
–
–
16
Gate-to-Source
V
o
ltage, V
GS
— V
Case Temperature, Tc
–
–
°
C
IT15603
IT15604
|
y
fs
|
— I
I
— V
D
S
S
D
7
5
–
–
100
7
V
=0V
V
=
–
–
10V
GS
Single pulse
DS
Single pulse
5
3
2
3
2
–
–
10
7
5
3
2
–
–
1.0
10
7
5
7
5
3
2
–
–
0.1
7
5
3
2
3
2
–
–
0.01
7
5
3
2
1.0
–
–
0.001
–
–
0.2
–
–
0.3
–
–
0.4
–
–
0.5
–
–
0.6
–
–
0.7
–
–
0.8
–
–
0.9
–
–
1.0
–
–
1.1
–
–
1.2
–
–
1.3
7
2
3
5
7
2
3
5
7
–
–
10
2
3
5
7
–
–
0.1
–
–
1.0
Diode Forward
V
o
ltage, V
SD
— V
Drain Current, I
–
– A
IT15605
IT15606
D
SW
T
i
m
e
–
– I
C
i
s
s, Coss, Crss
–
– V
D
DS
1000
7
5
V
V
=
–
–
30V
=
–
–
10V
f=1MHz
DD
GS
7
5
3
2
3
2
t
f
1000
100
7
5
7
5
3
2
3
2
t (on)
d
10
100
7
7
2
3
5
7
2
3
5
7
2
3
5
7
0
–
–
10
–
–
20
–
–
30
–
–
40
–
–
50
–
–
60
IT15608
–
–
0.1
–
–
1.0
–
–
10
–
–
10
Drain Current, I
–
– A
Drain-to-Source
V
o
ltage, V
–
– V
DS
IT15607
D
No. A1755-3/7
A
T
P
113
A S
O
V
GS
—
Q
g
–
–
10
–
–
9
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
3
2
V
=
–
–
30V
DS
=
–
–
35A
I
I
=
–
–
105A (PW
≤
10
μ
s)
DP
I
D
–
–
100
7
5
=
–
–
35A
D
3
2
–
–
10
7
5
3
2
Operation in
this area is
limited by R
(on).
–
–
1.0
DS
7
5
3
2
–
–
1
0
Tc=25
°
C
Single pulse
–
–
0.1
–
–
0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
10
20
30
40
50
60
IT15609
–
–
1.0
–
–
10
–
–
100
IT15610
Total Gate Charge, Qg
–
–
n
C
Drain-to-Source
V
o
ltage, V
— V
DS
P
—
T
c
E
—
T
a
D
AS
60
50
40
30
20
120
100
80
60
40
20
0
10
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT15179
Ambient Temperature, Ta
–
–
°
C
Case Temperature, Tc
–
–
°
C
IT15611
No. A1755-4/7
A
T
P
113
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
A
T
P113-TL-H
No. A1755-5/7
A
T
P
113
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
A
T
P113-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1755-6/7
A
T
P
113
Note on usage : Since the
A
T
P113 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A1755-7/7
