onsemi-ATP301-TL-H
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Order
i
n
g number : EN
A
1
457A
ATP301
P-Channel Power MOSFET
–
–
Ω
100V, 28A,
75m ,
ATPAK
F
e
atures
•
•
•
ON-resistance R
(on)=57m (typ.)
10V drive
Input capacitance
Ciss=4000pF (typ.)
Halogen free compliance
Ω
DS
•
Spec
i
fi
c
at
i
o
ns
at Ta=25°C
A
b
so
l
u
te Maximum Rat
i
n
gs
Pa
r
a
meter
Dr
a
i
n
-to-Source
V
o
l
t
age
Gate-to-Source
V
o
l
t
age
Dr
a
i
n
C
urrent
(
D
C
)
S
y
mbol
Cond
i
t
i
o
ns
Rat
i
n
gs
Unit
V
V
–
–
100
±20
–
–
28
–
–
112
70
D
S
S
V
V
GSS
I
A
D
Dr
a
i
n
C
urrent
(
P
u
l
s
e)
I
PW 10 s,
duty cyc
l
e
1
%
A
≤
μ
≤
DP
All
o
wab
l
e
P
ower
D
i
s
s
i
p
at
i
o
n
Channel
T
e
mperature
P
T
c
=25 C
W
°C
°C
mJ
A
°
D
T
c
h
150
Storage
T
e
mperature
T
s
tg
–
–
55 to +150
A
v
a
l
a
nche Ene
r
g
y
(
S
i
n
g
l
e
P
u
l
s
e)
*
1
A
v
a
l
a
nche Current
*
2
E
54
AS
I
–
–
28
AV
Note :
1 V
=
–
-30
V
,
L
=100
H, I
=
–
-28A
*
μ
DD
2 L
100 H,
Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package
D
i
m
ens
i
o
ns
unit : mm (typ)
Product &
Package
I
n
f
o
rmat
i
o
n
• Package
:
A
T
P
A
K
7057-001
• JEITA, JEDEC
: –
• Minimum Packing Quantity
: 3,000 pcs./reel
A
T
P
301-
T
L
–
H
Pack
i
n
g
T
y
p
e:
T
L
M
a
rk
i
n
g
1.5
6.5
4.6
2.6
0.4
0.4
A
T
P
301
4
L
O
T No.
TL
El
e
ctr
i
c
al Connect
i
o
n
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Dr
a
i
n
0.4
2.3
2.3
1
3 :
S
ource
4 : Dr
a
i
n
3
AT
P
A
K
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/42209QA MS IM TC-00001941
No. A1457-1/7
A
T
P
301
at Ta=25°C
El
e
ctr
i
c
al Character
i
s
t
i
c
s
Rat
i
n
gs
typ
Pa
r
a
meter
S
y
mbol
Cond
i
t
i
o
ns
Unit
m
i
n
–
–
100
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=
–
–
1mA, V
=0V
V
μ
A
μ
A
V
(BR)DSS
D
GS
=
–
–
100V, V
=0V
I
I
V
V
V
V
— 1
DSS
DS
GS
DS
DS
GS
=±16
V
, V
=
0V
DS
±10
GSS
V
(off)
GS
=
–
–
10V, I
=
–
–
1mA
–
–
2.0
–
–
3.5
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
I
n
put Capac
i
t
ance
|
yfs
|
(on)
=
–
–
10V, I
=
–
–
14
A
32
S
D
R
I
=
–
–
14A, V
=
–
–
10V
D GS
57
4000
270
150
32
75
m
Ω
pF
pF
pF
ns
DS
C
i
s
s
Output Capac
i
t
ance
Coss
Crss
V
=
–
–
20
V
,
f
=1MHz
DS
Reverse
T
r
a
ns
f
e
r Capac
i
t
ance
T
u
rn-ON De
l
a
y
T
i
m
e
t
t
t
t
(
o
n)
d
r
Ri
s
e
T
i
m
e
130
330
190
73
ns
See spec
i
fi
e
d
T
e
st C
i
r
c
u
i
t
.
T
u
rn-OFF De
l
a
y
T
i
m
e
(
o
f
f)
ns
d
f
Fa
l
l Ti
m
e
ns
T
o
tal Gate Cha
r
g
e
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Dra
i
n “Mill
e
r
” Charge
Di
o
de Forward
V
o
l
t
age
Qgs
Qgd
V
=
–
–
60
V
, V
=
–
–
10
V
, I
=
–
–
28A
GS
16
DS
D
14
V
I =
–
–
28
A
,
V
=
0V
GS
–
–
1.0
–
–
1.5
SD
S
Sw
i
t
ch
i
n
g
T
i
m
e
T
e
st C
i
r
c
u
i
t
Av
a
l
a
nche Res
i
s
tance
T
e
st C
i
r
c
u
i
t
V =
–
–
60V
DD
V
IN
0V
–
–
10V
L
≥
50
Ω
RG
I
= –
–
14A
D
V
IN
R =4.3
Ω
L
D
V
OUT
P
W
=10
μ
s
D.C.
≤
1%
A
T
P
301
0V
–
–
10V
V
DD
50
Ω
G
A
T
P
301
P. G
50
Ω
S
Order
i
n
g
I
n
f
o
rmat
i
o
n
D
e
v
i
c
e
Package
A
T
PAK
Sh
i
p
p
i
n
g
memo
Pb Free and Ha
l
o
gen Free
A
T
P
301-
T
L
–
H
3,000pcs./reel
No. A1457-2/7
A
T
P
301
I
D
— V
DS
I
— V
(
o
f
f)
D GS
–
–
60
–
–
50
–
–
40
–
–
30
–
–
20
–
–
60
–
–
50
–
–
40
–
–
30
–
–
20
V
=
–
–
10V
Tc=25
°
C
DS
–
–
10
0
–
–
10
0
0
–
–
0.5
–
–
1.0
–
–
1.5
–
–
2.0
–
–
2.5
–
–
3.0
–
–
3.5
–
–
4.0
–
–
4.5
–
–
5.0
IT14592
0
–
–
1
–
–
2
–
–
3
–
–
4
–
–
5
–
–
6
IT14593
Drain-to-Source
V
o
ltage, V
DS
— V
Cutoff
V
o
ltage, V
(off)
–
– V
GS
R
(
o
n)
–
– V
R
(
o
n)
–
–
T
c
DS
GS
DS
160
140
120
100
80
200
180
160
140
120
100
80
Single pulse
Single pulse
I =
–
–
14A
D
Tc=75
°
C
60
25
°
C
60
–
–
25
°
C
40
40
20
0
20
0
–
–
50
–
–
25
0
25
50
75
100
125
150
–
–
2
–
–
3
–
–
4
–
–
5
–
–
6
–
–
7
–
–
8
–
–
9
–
–
10
Gate-to-Source
V
o
ltage, V
— V
IT14594
Case Temperature, Tc
–
–
°
C
IT14595
GS
|
y
fs
|
— I
I
— V
D
S
S
D
–
–
100
100
7
5
V
=
–
–
10V
V
=0V
DS
GS
7
Single pulse
3
2
5
–
–
10
3
2
7
5
3
2
–
–
1.0
7
5
10
7
5
3
2
–
–
0.1
7
5
3
2
3
2
–
–
0.01
7
5
1.0
3
2
7
5
–
–
0.001
2
3
5
7
2
3
5
7
2
3
5
0
–
–
0.2
–
–
0.4
–
–
0.6
–
–
0.8
–
–
1.0
–
–
1.2
IT14597
–
–
0.1
–
–
1.0
–
–
10
Diode Forward
V
o
ltage, V
SD
— V
Drain Current, I
–
– A
IT14596
D
SW
T
i
m
e
–
– I
C
i
s
s, Coss, Crss
–
– V
D
DS
1000
10000
f=1MHz
V
V
=
–
–
60V
=
–
–
10V
DD
GS
7
5
7
5
3
2
3
2
t
f
1000
100
7
5
7
5
3
2
t (on)
d
3
2
100
10
–
–
0.1
7
2
3
5
7
2
3
5
7
2
3
5
0
–
–
5
–
–
10
–
–
15
–
–
20
–
–
25
–
–
30
IT14599
–
–
1.0
–
–
10
Drain Current, I
–
– A
IT14598
Drain-to-Source
V
o
ltage, V
–
– V
DS
D
No. A1457-3/7
A
T
P
301
A S
O
V
GS
—
Q
g
–
–
10
–
–
9
–
–
8
–
–
7
–
–
6
–
–
5
–
–
4
–
–
3
–
–
2
3
2
I
=
–
–
112A
=
–
–
28A
V
=
–
–
60V
PW
≤
10
μ
s
DP
DS
=
–
–
28A
–
–
100
I
D
7
5
3
2
I
D
–
–
10
7
5
3
2
–
–
1.0
Operation in
this area is
limited by R
(on).
7
5
3
2
DS
–
–
0.1
7
5
3
2
–
–
1
0
Tc=25
°
C
Single pulse
–
–
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
0
10
20
30
40
50
60
70
80
–
–
0.1
–
–
1.0
–
–
10
–
–
100
IT14601
Total Gate Charge, Qg
–
–
n
C
IT14600
Drain-to-Source
V
o
ltage, V
— V
DS
P
—
T
c
E
—
T
a
D
AS
120
80
70
60
50
40
30
20
100
80
60
40
20
0
10
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT14603
IT14602
Ambient Temperature, Ta
–
–
°
C
Case Temperature, Tc
–
–
°
C
No. A1457-4/7
A
T
P
301
T
a
p
i
n
g Spec
i
fi
c
at
i
o
n
A
T
P301-TL-H
No. A1457-5/7
A
T
P
301
Out
l
i
n
e Draw
i
n
g
L
a
nd Pattern Examp
l
e
A
T
P301-TL-H
M
a
ss
(
g
)
Un
i
t
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1457-6/7
A
T
P
301
Note on usage : Since the
A
T
P301 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No. A1457-7/7
