onsemi-BC32740BU

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October 2014  

BC327  

PNP Epitaxial Silicon Transistor  

Features  

• Switching

 

and Amplifier Applications  

• Suitable

 

for AF-Driver Stages and Low-Power Output Stages  

• Complement

 

to BC337 / BC338  

TO-92  

1. Collector

 

2. Base

 

3. Emitter  

1

Ordering Information  

Part Number  

BC327BU  

Top Mark  

BC327  

Package  

Packing Method  

Bulk  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

TO-92 3L  

BC32716BU  

BC32716TA  

BC32725BU  

BC32725TA  

BC32740BU  

BC32740TA  

BC32716  

BC32716  

BC32725  

BC32725  

BC32740  

BC32740  

Bulk  

Ammo  

Bulk  

Ammo  

Bulk  

Ammo  

Absolute Maximum Ratings  

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  

absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

V

CES  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

-50  

Unit  

V

Collector-Emitter Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current (DC)  

Junction

T

e

mperature  

Storage

T

e

mperature  

-45  

V

-5  

V

-800  

mA  

°

C  

°

C  

T

J  

150  

T

STG  

-55 to 150  

© 2002 Fairchild Semiconductor Corporation  

BC327 Rev. 1.1.0  

Thermal Characteristics

(1)  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

P

D  

Parameter  

Value  

625  

Unit  

mW  

Power Dissipation  

Derate Above 25

°

C  

5.0  

mW/

°

C  

°

C/W  

R

θ

JA  

Thermal Resistance, Junction-to-Ambient  

200  

Note:  

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  

Electrical Characteristics  

Values are at T

A

= 25°C unless otherwise noted.  

Symbol  

BV

CEO  

BV

CES  

BV

EBO  

I

CES  

Parameter  

Conditions  

Min.  

-45  

-50  

-5  

Typ.  

Max.  

Unit  

V

Collector-Emitter Breakdown Voltage

 

I

C

= -10 mA, I

B

= 0  

Collector-Emitter Breakdown Voltage

 

I

C

= -0.1 mA, V

BE

= 0  

V

Emitter-Base Breakdown Voltage  

Collector Cut-Off Current  

I

E

= -10

μ

A, I

C

= 0  

V

V

CE

= -45

V

, I

B

= 0  

-2  

-100  

630  

nA  

h

FE1  

V

CE

= -1 V, I

C

= -100 mA  

V

CE

= -1 V, I

C

= -300 mA  

100  

60  

DC Current Gain  

h

FE2  

V

CE

(sat)  

V

BE

(on)  

Collector-Emitter Saturation Voltage

 

I

C

= -500 mA, I

B

= -50 mA  

-0.7  

-1.2  

V

V

Base-Emitter On Voltage  

V

CE

= -1 V, I

C

= -300 mA  

V

CE

= -5 V, I

C

= -10 mA,  

f = 20 MHz  

f

T  

Current Gain Bandwidth Product  

100  

12  

MHz  

pF  

V

CB

= -10

V

,

I

E

= 0,  

f = 1 MHz  

C

ob  

Output Capacitance  

h

FE

Classification  

Classification  

16  

100 ~ 250  

60 ~  

25  

40  

h

FE1  

h

FE2  

160 ~ 400  

100 ~  

250 ~ 630  

170 ~  

© 2002 Fairchild Semiconductor Corporation  

BC327 Rev. 1.1.0  

2

Typical Performance Characteristics  

-500  

-400  

-300  

-20  

-16  

-12  

-8  

-200  

I

B

= – 1.0mA  

I

B

= – 0.5mA  

-100  

-4  

I

B

= 0  

I

B

= 0  

-0  

-1  

-2  

-3  

-4  

-5  

-10  

-20  

-30  

-40  

-50  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

V

CE

[V], COLLECTOR-EMITTER VOLTAGE  

Figure 1. Static Characteristic  

Figure 2. Static Characteristic  

1000  

100  

10  

-10  

PULSE  

V

CE

= – 2.0V  

I

C

= 10 I

B  

PULSE  

V

CE

(sat)  

-1  

– 1.0V  

-0.1  

V

BE

(sat)  

1

-0.1  

-0.01  

-0.1  

-1  

-10  

-100  

-1000  

-1  

-10  

-100  

-1000  

I

C

[mA], COLLECTOR CURRENT  

I

C

[mA], COLLECTOR CURRENT  

Figure 3. DC current Gain  

Figure 4. Base-Emitter Saturation Voltage  

Collector-Emitter Saturation Voltage  

-1000  

-100  

-10  

1000  

V

CE

= -5.0V  

V

CE

= -1V  

PULSE  

100  

-1  

-0.1  

-0.4  

10  

-0.5  

-0.6  

-0.7  

-0.8  

-0.9  

-1  

-10  

-100  

V

BE

[V], BASE-EMITTER VOLTAGE  

I

C

[mA], COLLECTOR CURRENT  

Figure 5. Base-Emitter On Voltage  

Figure 6. Gain Bandwidth Product  

© 2002 Fairchild Semiconductor Corporation  

BC327 Rev. 1.1.0  

3

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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  

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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  

literature is subject to all applicable copyright laws and is not for resale in any manner.  

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