onsemi-BC337-25RL1

Part #onsemi-BC337-25RL1
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onsemi-BC337-25RL1
BC337, BC337-25,  
BC337-40  
Amplifier
T
r
ansistors  
NPN Silicon  
Features  
•
These are Pb
−
Free Devices  
COLLECTOR  
1
2
MAXIMUM RATINGS  
BASE  
Rating  
Collector
−
Emitter Voltage  
Collector
−
Base Voltage  
Emitter
−
Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
3
EMITTER  
50  
Vdc  
5.0  
Vdc  
Collector Current
−
Continuous  
I
C
800  
mAdc  
T
o
tal Device Dissipation @ T
 
= 25
°
C  
P
D
625  
5.0  
mW  
mW/
°
C  
A
Derate above 25
°
C  
TO
−
92  
CASE 29  
STYLE 17  
T
o
tal Device Dissipation @ T
 
= 25
°
C  
P
D
1.5  
12  
W
mW/
°
C  
C
Derate above 25
°
C  
Operating and Storage Junction  
T
e
mperature Range  
T , T  
−
55 to +150  
°
C  
J
stg  
1
1
2
2
3
3
THERMAL CHARACTERISTICS  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Characteristic  
Symbol  
Max  
200  
Unit  
°
C/W  
°
C/W  
Thermal Resistance, Junction
−
to
−
Ambient  
Thermal Resistance, Junction
−
to
−
Case  
R
q
JA  
R
83.3  
q
JC  
MARKING DIAGRAM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
BC33  
7
−
xx  
AYWW
G  
G
BC337
−
xx = Device
 
Code  
(Refer to page 4)  
A
Y
= Assembly Location  
=
Y
e
ar  
WW  
G
= Work Week  
= Pb
−
Free Package  
(Note: Microdot may be in either location)  
*For additional information on our Pb
−
Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting
T
e
chniques  
Reference Manual, SOLDERRM/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
November, 2013
−
Rev. 8  
BC337/D  

BC337, BC337
−
25, BC337
−
40  
ELECTRICAL CHARACTERISTICS
(T =
 
25
°
C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collecto
r
−
Emitter Breakdown Voltage  
V
45  
50  
5.0  
−
−
−
−
−
−
−
−
−
Vdc  
Vdc  
(BR)CEO  
(I =
 
10 mA, I
 
= 0)  
C
B
Collecto
r
−
Emitter Breakdown Voltage  
(I =
 
100
m
A, I
 
= 0)  
V
(BR)CES  
(BR)EBO  
C
E
Emitte
r
−
Base Breakdown Voltage  
(I =
 
10
m
A, I
 
= 0)  
V
−
Vdc  
E
C
Collector Cutoff Current  
(V =
 
30
V
, I
 
=
0
)  
I
100  
100  
100  
nAdc  
nAdc  
nAdc  
CBO  
CB  
E
Collector Cutoff Current  
(V =
 
45
V
, V
 
=
0
)  
I
−
CES  
EBO  
CE  
BE  
Emitter Cutoff Current  
(V =
 
4.0
V
, I
 
=
0
)  
I
−
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
−
(I =
 
100 mA, V
 
= 1.0 V)  
BC337  
BC337
−
25  
BC337
−
40  
100  
160  
250  
60  
−
−
−
−
630  
400  
630  
−
C
CE  
(I =
 
300 mA, V
 
= 1.0 V)  
C
CE  
Base
−
Emitter On Voltage  
(I =
 
300 mA, V
 
= 1.0 V)  
V
−
−
1.2  
Vdc  
Vdc  
BE(on)  
C
CE  
Collecto
r
−
Emitter Saturation Voltage  
(I =
 
500 mA, I
 
= 50 mA)  
V
−
−
0.7  
CE(sat)  
C
B
SMALL
−
SIGNAL CHARACTERISTICS  
Output Capacitance  
C
f
−
−
15  
−
−
pF  
ob  
(V =
 
10
V
, I
 
=
0
, f = 1.0 MHz)  
CB  
E
Curren
t
−
Gain
−
Bandwidth Product  
(I =
 
10 mA, V
 
= 5.0
V
, f =
1
00 MHz)  
210  
MHz  
T
C
CE  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
1.0  
0.7  
D = 0.5  
0.5  
0.3  
0.2  
0.2  
0.1  
q
q
q
q
(t) = (t)
q  
JC  
JC  
JC  
JA  
JA  
= 100
°
C/W MAX  
(t) = r(t)
q  
0.05  
0.02  
0.1  
P
(pk)  
JA  
0.07  
0.05  
= 375
°
C/W MAX  
SINGLE PULSE  
SINGLE PULSE  
t
1
D CURVES APPLY FOR  
POWER  
PULSE TRAIN SHOWN  
0.01  
0.03  
0.02  
t
2
DUTY CYCLE, D = t
 
/t  
1 2  
READ TIME AT t  
1
T
J(pk)  
−
T =
 
P  
q
(t)  
(pk) JC  
C
0.01  
0.001 0.002  
0.005 0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
t, TIME (SECONDS)  
Figure 1. Thermal Response  
2

BC337, BC337
−
25, BC337
−
40  
1000  
100  
10  
1000  
1.0 s  
1.0 ms  
T =
 
135
°
C  
J
V
= 1 V  
CE  
T =
 
25
°
C  
J
100
m
s  
dc  
T
= 25
°
C  
C
dc  
100  
T =
 
25
°
C  
A
CURRENT LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
(APPLIES BELOW RATED V  
)
CEO  
10  
0.1  
1.0  
3.0  
10  
30  
100  
1.0  
10  
100  
1000  
V
CE  
, COLLECTOR-EMITTER VOLTAGE  
I ,
 
COLLECTOR CURRENT (MA)  
C
Figure 2. Active Region
−
Safe Operating Area  
Figure 3. DC Current Gain  
1.0  
0.8  
0.6  
0.4  
1.0  
0.8  
T =
 
25
°
C  
T =
 
25
°
C  
A
J
V
@ I
 
/I =
 
10  
C B  
BE(sat)  
V
BE(on)  
@ V
 
= 1 V  
CE  
0.6  
0.4  
0.2  
0
I
C
= 10 mA  
100 mA
 
300 mA  
500 mA  
0.2  
0
V
@ I
 
/I =
 
10  
C B  
CE(sat)  
0.01  
0.1  
1
I ,
 
BASE CURRENT (mA)  
10  
100  
1
10  
100  
1000  
I ,
 
COLLECTOR CURRENT (mA)  
C
B
Figure 4. Saturation Region  
Figure 5. “On” Voltages  
100  
+1  
0
q
for V  
CE(sat)  
VC  
C
ib  
10  
-1  
-2  
C
ob  
q
for V  
BE  
VB  
1
0.1  
1
10  
100  
1000  
1
10  
100  
I ,
 
COLLECTOR CURRENT (mA)  
C
V ,
 
REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Temperature Coefficients  
Figure 7. Capacitances  
3

BC337, BC337
−
25, BC337
−
40  
ORDERING INFORMATION  
†
Device  
BC337G  
Marking  
7
Package  
Shipping  
5000 Units / Bulk  
2000 /
T
a
pe & Reel  
5000 Units / Bulk  
2000 /
T
a
pe & Reel  
2000 /
T
a
pe & Reel  
2000 / Ammo Box  
5000 Units / Bulk  
2000 /
T
a
pe & Reel  
2000 / Ammo Box  
BC337RL1G  
7
BC337
−
025G  
7
−
25  
7
−
25  
7
−
25  
7
−
25  
7
−
40  
7
−
40  
7
−
40  
BC337
−
25RL1G  
BC337
−
25RLRAG  
BC337
−
25ZL1G  
BC337
−
040G  
TO
−
92  
(Pb
−
Free)  
BC337
−
40RL1G  
BC337
−
40ZL1G  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging  
Specifications Brochure, BRD8011/D.  
4

MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO
−
92 (TO
−
226)  
CASE 29
−
11  
ISSUE AM  
SCALE 1:1  
DATE 09 MAR 2007  
1
1
2
2
3
3
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING
 
DIMENSION: INCH.  
3. CONTOUR
 
OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
STRAIGHT LEAD  
BULK PACK  
B
R
4. LEAD
 
DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN
 
MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
—  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
—  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
—  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
—  
D
X X  
G
J
H
K
L
—  
—  
V
N
P
R
V
0.105  
0.100  
—  
2.66  
2.54  
—  
C
SECTION X
−
X  
0.115  
0.135  
2.93  
3.43  
1
N
—  
—  
N
NOTES:  
1. DIMENSIONING
 
AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING
 
DIMENSION: MILLIMETERS.  
3. CONTOUR
 
OF PACKAGE BEYOND  
DIMENSION R IS UNCONTROLLED.  
A
BENT LEAD  
TAPE & REEL  
AMMO PACK  
B
R
4. LEAD
 
DIMENSION IS UNCONTROLLED IN P  
AND BEYOND DIMENSION K MINIMUM.  
P
T
MILLIMETERS  
SEATING  
PLANE  
DIM MIN  
MAX  
5.20  
5.33  
4.19  
0.54  
2.80  
0.50  
—  
K
A
B
C
D
G
J
4.45  
4.32  
3.18  
0.40  
2.40  
0.39  
12.70  
2.04  
1.50  
2.93  
3.43  
D
X X  
G
K
N
P
R
V
J
2.66  
4.00  
—  
V
C
—  
SECTION X
−
X  
1
N
STYLES ON PAGE 2  
98ASB42022B  
ON SEMICONDUCTOR STANDARD  
DOCUMENT NUMBER:  
STATUS:  
Electronic versions are uncontrolled except when  
accessed directly from the Document Repository. Printed  
versions are uncontrolled except when stamped  
“CONTROLLED COPY” in red.  
NEW STANDARD:  
DESCRIPTION: TO
−
92 (TO
−
226)  
PAGE 1 O
F
3

TO
−
92 (TO
−
226)  
CASE 29
−
11  
ISSUE AM  
DATE 09 MAR 2007  
STYLE 2:  
PIN 1.
 
BASE  
2. EMITTER  
3. COLLECTOR  
STYLE 3:  
STYLE 4:  
PIN 1.
 
CATHODE  
STYLE 5:  
STYLE 1:  
PIN 1.
 
EMITTER  
2. BASE  
PIN 1.
 
ANODE  
2. ANODE  
3. CATHODE  
PIN 1.
 
DRAIN  
2. SOURCE  
3. GATE  
2. CATHODE  
3. ANODE  
3. COLLECTOR  
STYLE 8:  
PIN 1.
 
DRAIN  
2. GATE  
STYLE 9:  
STYLE 10:  
STYLE 7:  
STYLE 6:  
PIN 1.
 
GATE  
PIN 1.
 
BASE 1  
2. EMITTER  
3. BASE
 
2  
PIN 1.
 
CATHODE  
2. GATE  
3. ANODE  
PIN 1.
 
SOURCE  
2. DRAIN  
3. GATE  
2. SOURCE
 
& SUBSTRATE  
3. DRAIN  
3. SOURCE
 
& SUBSTRATE  
STYLE 13:  
STYLE 14:  
STYLE 15:  
STYLE 12:  
STYLE 11:  
PIN 1.
 
ANODE  
PIN 1.
 
ANODE 1  
2. GATE  
3. CATHODE
 
2  
PIN 1.
 
EMITTER  
2. COLLECTOR  
3. BASE  
PIN 1.
 
ANODE 1  
2. CATHODE  
3. ANODE
 
2  
PIN 1.
 
MAIN TERMINAL 1  
2. GATE  
3. MAIN
 
TERMINAL 2  
2. CATHODE
 
& ANODE  
3. CATHODE  
STYLE 18:  
STYLE 19:  
STYLE 20:  
STYLE 17:  
STYLE 16:  
PIN 1.
 
ANODE  
2. GATE  
PIN 1.
 
ANODE  
2. CATHODE  
3. NOT
 
CONNECTED  
PIN 1.
 
GATE  
2. ANODE  
3. CATHODE  
PIN 1.
 
NOT CONNECTED  
2. CATHODE  
3. ANODE  
PIN 1.
 
COLLECTOR  
2. BASE  
3. EMITTER  
3. CATHODE  
STYLE 23:  
STYLE 24:  
STYLE 25:  
STYLE 22:  
STYLE 21:  
PIN 1.
 
GATE  
2. SOURCE  
3. DRAIN  
PIN 1.
 
EMITTER  
2. COLLECTOR/ANODE  
3. CATHODE  
PIN 1.
 
MT 1  
2. GATE  
3. MT
 
2  
PIN 1.
 
SOURCE  
2. GATE  
3. DRAIN  
PIN 1.
 
COLLECTOR  
2. EMITTER  
3. BASE  
STYLE 28:  
STYLE 29:  
STYLE 30:  
STYLE 27:  
PIN 1.
 
MT  
2. SUBSTRATE  
3. MT  
STYLE 26:  
PIN 1.  
PIN 1.
 
CATHODE  
2. ANODE  
3. GATE  
PIN 1.
 
NOT CONNECTED  
2. ANODE  
3. CATHODE  
PIN 1.
 
DRAIN  
2. GATE  
3. SOURCE  
V
CC  
2. GROUND
 
2  
3. OUTPUT  
STYLE 33:  
STYLE 34:  
STYLE 35:  
PIN 1.
 
GATE  
2. COLLECTOR  
3. EMITTER  
STYLE 32:  
PIN 1.
 
BASE  
2. COLLECTOR  
STYLE 31:  
PIN 1.
 
GATE  
2. DRAIN  
PIN 1.
 
RETURN  
2. INPUT  
3. OUTPUT  
PIN 1.
 
INPUT  
2. GROUND  
3. LOGIC  
3. EMITTER  
3. SOURCE  
98ASB42022B  
DOCUMENT NUMBER:  
STATUS:  
Electronic versions are uncontrolled except when  
accessed directly from the Document Repository. Printed  
versions are uncontrolled except when stamped  
“CONTROLLED COPY” in red.  
ON SEMICONDUCTOR STANDARD  
NEW STANDARD:  
DESCRIPTION: TO
−
92 (TO
−
226)  
PAGE 2 O
F
3

DOCUMENT NUMBER:  
98ASB42022B  
PAGE 3 OF 3  
ISSUE  
REVISION  
DATE  
09 MAR 2007  
AM  
ADDED BENT
−
LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA.  
ON Semiconductor
and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
 
SCILLC reserves the right to make changes without further notice  
to any products herein.
 
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
 
All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
 
SCILLC does not convey any license under its patent rights  
nor the rights of others.
 
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
 
Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
 
SCILLC is an Equal  
Opportunity/Affirmative Action Employer.
 
This literature is subject to all applicable copyright laws and is not for resale in any manner.  
©
Semiconductor Components Industries, LLC, 2007  
Case Outline Number:  
March, 2007
−
Rev. 11AM  
29  

onsemi
,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates  
and/or subsidiaries in the United States and/or other countries.
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.
onsemi
reserves the right to make changes at any time to any  
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−
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onsemi
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use  
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and applications using
onsemi
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license  
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems  
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onsemi
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal  
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:  
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