onsemi-BC516-D27Z
| Part # | onsemi-BC516-D27Z |
Download  | onsemi-BC516-D27Z |
BC516
PNP Darlington Transistor
Features
• This
device is designed for applications reguiring extremely
high current gain at currents to 1 A.
• Sourced
from process 61.
1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
T
a
pe and Reel
BC516
–
D27Z
BC516
TO-92 3L
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-30
-40
V
-10
V
Collector Current – Continuous
-1
A
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°
C
© 2002
Semiconductor Components Industries, LLC.
September-2017,
Rev.
2
Publication Order Number:
BC516-D27Z/D
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Parameter
Max.
625
Unit
mW
T
o
tal Device Dissipation, T
A
= 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
R
θ
JA
200
°
C/W
°
C/W
R
θ
JC
83.3
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
Parameter
Conditions
Min.
-30
Typ.
Max.
Unit
V
Collector-Emitter Breakdown Voltage
I
C
= -2 mA, I
B
= 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
I
C
= -100
μ
A, I
E
= 0
I
E
= -10
μ
A, I
C
= 0
-40
V
-10
V
V
CB
= -30
V
, I
E
= 0
I
C
= -20 mA, V
CE
= -2 V
-100
nA
h
FE
DC Current Gain
30,000
V
CE
(sat) Collector-Emitter
Saturation Voltage
I
C
= -100 mA, I
B
= -0.1 mA
-1
V
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -10 mA, V
CE
= -5 V
-1.4
I
C
= -10 mA, V
CE
= -5 V,
f = 100 MHz
f
T
Current Gain – Bandwidth Product
(3)
200
MHz
Notes:
2. Pulse test: pulse width
≤
2.0%
3. f
T
= Ih
fe
I · f
test
2
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