onsemi-BC517-D74Z

January 2005  

BC517  

NPN Darlington Transistor  

•

•

This device is designed for applications requiring extremely high current gain at currents to 1.0A.  

Sourced from process 05.  

TO-92  

1

1. Collector

 

2. Base

 

3. Emitter  

Absolute Maximum Ratings *  

T =

 

25°C unless otherwise noted  

a

Symbol  

Parameter  

Value  

30  

Units  

V

V

V

Collector-Emitter Voltage  

V

V

CEO  

CBO  

EBO  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

40  

10  

V

I

– Continuous  

1.2  

A

C

T , T  

Operating and Storage Junction

T

e

mperature Range  

-55 ~ 150  

°

C  

J

STG  

* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.  

NOTES:  

1. These ratings are based on a maximum junction temperature of 150 degrees C.  

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

Electrical Characteristics  

T =

 

25°C unless otherwise noted  

a

Symbol  

Parameter  

Conditions  

Min.  

Max  

Units  

Off Characteristics  

V

V

V

Collector-Emitter Breakdown Voltage *  

Collector-Base Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector Cut-off Current  

I

I

I

= 2.0mA, I

 

= 0  

30  

40  

10  

V

V

(BR)CEO  

(BR)CBO  

(BR)EBO  

CBO  

C

C

E

B

= 10

µ

A, I

 

= 0  

E

= 100nA, I

 

= 0  

V

C

I

V

= 30V, I

 

= 0  

100  

nA  

CB  

E

On Characteristics *  

h

DC Current Gain  

V

= 2.0

V

, I

 

=

2

0mA  

30,000  

FE  

CE  

C

V

V

Collector-Emitter Saturation Voltage  

Base-Emitter On Voltage  

I

I

= 100mA, I

 

= 0.1mA  

1

V

V

CE(sat)  

BE(on)  

C

C

B

= 10mA, V

 

= 5.0V  

1.4  

CE  

Thermal Characteristics  

T =

 

25°C unless otherwise noted  

a

Symbol  

Parameter  

Value  

Units  

P

T

o

tal Device Dissipation  

Derate above 25

°

C  

625  

5.0  

mW  

mW/

°

C  

D

R

R

Thermal Resistance, Junction to Case  

Thermal Resistance, Junction to Ambient  

83.3  

200  

°

C/W  

°

C/W  

θ

JC  

θ

JA  

©2005 Fairchild Semiconductor Corporation  

BC517 Rev. A  

1

Mechanical Dimensions  

TO-92  

+0.25  

–0.15  

4.58  

0.46

±

0.10  

+0.10  

–0.05  

1.27TYP  

1.27TYP  

0.38  

[1.27

±

0.20  

]

[1.27

±

0.20

]  

3.60

±

0.20  

(R2.29)  

Dimensions in Millimeters  

2

BC517 Rev. A  

TRADEMARKS  

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  

not intended to be an exhaustive list of all such trademarks.  

ACEx™  

POP™  

SPM™  

Stealth™  

IntelliMAX™  

ISOPLANAR™  

LittleFET™  

MICROCOUPLER™  

MicroFET™  

MicroPak™  

MICROWIRE™  

MSX™  

MSXPro™  

OCX™  

OCXPro™  

OPTOLOGIC  

OPTOPLANAR™  

PACMAN™  

FAST  

FASTr™  

FPS™  

FRFET™  

GlobalOptoisolator™  

GTO™  

ActiveArray™  

Bottomless™  

CoolFET™  

CROSSVOLT

™  

DOME™  

EcoSPARK™  

E

2

CMOS™  

EnSigna™  

FACT™  

Power247™  

PowerEdge™  

PowerSaver™  

PowerTrench  

QFET  

SuperFET™  

SuperSOT™-3  

SuperSOT™-6  

SuperSOT™-8  

SyncFET™  

QS™  

HiSeC™  

I

2

C™  

QT Optoelectronics™

 

TinyLogic  

Quiet Series™  

RapidConfigure™  

RapidConnect™  

µ

SerDes™  

TINYOPTO™  

TruTranslation™  

UHC™  

i-Lo

™  

ImpliedDisconnect™  

FACT Quiet Series™  

UltraFET  

Across the board. Around the world.™  

The Power Franchise  

Programmabl

e

A

ctive Droop™  

SILENT SWITCHER

 

UniFET™  

SMART START™  

VCX™  

DISCLAIMER  

FAIRCHILD SEMICONDUCTOR RESERVE

S

T

HE RIGH

T

T

O MAKE CHANGES WITHOU

T

F

URTHER NOTIC

E

T

O

A

NY  

PRODUCTS HEREI

N

T

O IMPROVE RELIABILIT

Y

,

F

UNCTION OR DESIGN. FAIRCHILD DOES NO

T

A

SSUM

E

A

N

Y

L

IABILITY  

ARISING OU

T

O

F

T

H

E

A

PPLICATION OR USE O

F

A

N

Y

P

RODUC

T

O

R CIRCUI

T

D

ESCRIBED HEREIN; NEITHER DOES IT  

CONVE

Y

A

N

Y

L

ICENSE UNDER ITS PATEN

T

R

IGHTS, NO

R

T

HE RIGHTS OF OTHERS.  

LIFE SUPPORT POLICY  

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  

DEVICES OR SYSTEMS WITHOU

T

T

HE EXPRESS WRITTE

N

A

PPROVA

L

O

F FAIRCHILD SEMICONDUCTOR CORPORATION.  

As used herein:  

1. Life support devices or systems are devices or  

systems which, (a) are intended for surgical implant into  

the body, or (b) support or sustain life, or (c) whose  

failure to perform when properly used in accordance  

with instructions for use provided in the labeling, can be  

reasonably expected to result in significant injury to the  

user.  

2. A critical component is any component of a life  

support device or system whose failure to perform can  

be reasonably expected to cause the failure of the life  

support device or system, or to affect its safety or  

effectiveness.  

PRODUCT STATUS DEFINITIONS  

Definition of Terms  

Datasheet Identification  

Product Status  

Definition  

Advance Information  

Formative or  

In Design  

This datasheet contains the design specifications for  

product development. Specifications may change in  

any manner without notice.  

Preliminary  

First Production  

This datasheet contains preliminary data, and  

supplementary data will be published at a later date.  

Fairchild Semiconductor reserves the right to make  

changes at any time without notice in order to improve  

design.  

No Identification Needed  

Obsolete  

Full Production  

This datasheet contains final specifications. Fairchild  

Semiconductor reserves the right to make changes at  

any time without notice in order to improve design.  

Not In Production  

This datasheet contains specifications on a product  

that has been discontinued by Fairchild semiconductor.  

The datasheet is printed for reference information only.  

Rev. I15