onsemi-BC807-16LT3G
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DATA SHEET
General Purpose
Transistors
COLLECTOR
3
PNP Silicon
1
BASE
BC807-16L, BC807-25L,
BC807-40L
2
EMITTER
Features
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC
−
Q101 Qualified and
PPAP Capable
3
1
•
These Devices are Pb
−
Free, Halogen Free/BFR Free and are RoHS
2
Compliant
SOT
−
23
CASE 318
STYLE 6
MAXIMUM RATINGS
Rating
Symbol
Value
−
45
Unit
V
MARKING DIAGRAM
Collector
−
Emitter Voltage
Collector
−
Base Voltage
V
CEO
V
CBO
V
EBO
−
50
V
5xx M
G
Emitter
−
Base Voltage
−
5.0
−
500
V
G
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
1
5xx =
Device Code
xx = A1, B1, or C
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5 Board,
P
D
M
= Date Code*
Derate above 25
°
C
225
1.8
mW
mW/
°
C
G
= Pb
−
Free Package
A
(Note: Microdot may be in either location)
Thermal Resistance,
R
436
°
C/W
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
q
JA
T
o
tal Device Dissipation Alumina
P
D
Substrate, (Note 1) T
= 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Thermal Resistance,
R
417
°
C/W
q
JA
Junction and Storage
T
e
mperature
T , T
−
55 to +150
°
C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. FR
−
4 Board, 1 oz. Cu, 100mm
.
2. Alumina
= 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
October, 2021
−
Rev. 16
BC807
−
16LT1/D
BC807
−
16L, BC807
−
25L, BC807
−
40L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted.)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
Emitter Breakdown Voltage
(I =
−
10 mA)
C
V
−
45
−
50
−
5.0
−
−
−
−
−
−
V
V
V
(BR)CEO
Collecto
r
−
Emitter Breakdown Voltage
V
(BR)CES
(V =
0, I
=
−
10
m
A)
EB
C
Emitte
r
−
Base Breakdown Voltage
V
(BR)EBO
(I =
−
1.0
m
A)
E
Collector Cutoff Current
I
CBO
(V =
−
20 V)
(V =
−
20
V
, T
=
1
50
°
C)
CB
−
−
−
−
−
100
−
5.0
nA
m
A
CB
J
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
−
100 mA, V
=
−
1.0 V)
BC807
−
16, SBC80
−
16L
BC807
−
25, SBC807
−
25L
BC807
−
40, SBC807
−
40L
100
160
250
40
−
−
−
−
250
400
600
−
C
CE
(I =
−
500 mA, V
=
−
1.0 V)
C
CE
Collecto
r
−
Emitter Saturation Voltage
(I =
−
500 mA, I
=
−
50 mA)
V
−
−
−
0.7
V
V
CE(sat)
C
B
Bas
e
−
Emitter On Voltage
(I =
−
500 mA, V
=
−
1.0 V)
V
BE(on)
−
−
−
1.2
C
CE
SMALL
−
SIGNAL CHARACTERISTICS
Curren
t
−
Gain
−
Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I =
−
10 mA, V
=
−
5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
−
10
V
, f =
1
.0 MHz)
C
−
10
obo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Device
BC807
−
16LT1G
Specific Marking
Package
Shipping
5A1
3000 /
T
a
pe & Reel
SBC807
−
16LT1G*
BC807
−
16LT3G
SBC807
−
16LT3G*
BC807
−
25LT1G
SBC807
−
25LT1G*
BC807
−
25LT3G
SBC807
−
25LT3G*
BC807
−
40LT1G
SBC807
−
40LT1G*
BC807
−
40LT3G
SBC807
−
40LT3G*
5A1
5B1
5B1
5C
10,000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SOT
−
23
(Pb
−
Free)
5C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
−
Q101 Qualified and PPAP
Capable.
2
BC807
−
16L, BC807
−
25L, BC807
−
40L
TYPICAL CHARACTERISTICS
−
BC807
−
16LT1
500
400
300
200
1
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
150
°
C
25
°
C
−
55
°
C
25
°
C
0.1
−
55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−
55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−
55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
3
BC807
−
16L, BC807
−
25L, BC807
−
40L
TYPICAL CHARACTERISTICS
−
BC807
−
16LT1
-1.0
T =
25
°
C
J
-0.8
-0.6
-0.4
I
=
-500 mA
C
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 6. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 7. Temperature Coefficients
Figure 8. Capacitances
4
BC807
−
16L, BC807
−
25L, BC807
−
40L
TYPICAL CHARACTERISTICS
−
BC807
−
25LT1
500
400
300
200
1
150
°
C
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
25
°
C
25
°
C
−
55
°
C
0.1
−
55
°
C
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−
55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−
55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
5
BC807
−
16L, BC807
−
25L, BC807
−
40L
TYPICAL CHARACTERISTICS
−
BC807
−
25LT1
-1.0
T =
25
°
C
J
-0.8
-0.6
-0.4
I
=
-500 mA
C
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 14. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 15. Temperature Coefficients
Figure 16. Capacitances
6
BC807
−
16L, BC807
−
25L, BC807
−
40L
TYPICAL CHARACTERISTICS
−
BC807
−
40LT1
1000
900
800
700
600
500
400
300
1
I /I
= 10
C
B
V
CE
= 1 V
150
°
C
150
°
C
25
°
C
−
55
°
C
0.1
25
°
C
−
55
°
C
200
100
0
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
V
CE
= 5 V
−
55
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
25
°
C
−
55
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 21. Current Gain Bandwidth Product
vs. Collector Current
7
BC807
−
16L, BC807
−
25L, BC807
−
40L
TYPICAL CHARACTERISTICS
−
BC807
−
40LT1
-1.0
T =
25
°
C
J
-0.8
-0.6
-0.4
I
=
-500 mA
C
I
C
= -300 mA
-0.2
0
I
C
= -100 mA
I
C
= -10 mA
-0.01
-0.1
-1.0
I ,
BASE CURRENT (mA)
-10
-100
B
Figure 22. Saturation Region
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
-1.0
-2.0
C
ob
q
for V
BE
VB
1.0
-0.1
-1.0
-10
-100
-1000
-1.0
-10
-100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 23. Temperature Coefficients
Figure 24. Capacitances
8
BC807
−
16L, BC807
−
25L, BC807
−
40L
TYPICAL CHARACTERISTICS
−
BC807
−
16LT1, BC807
−
25LT1, BC807
−
40LT1
1
1 mS
1 S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 25. Safe Operating Area
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT
−
23 (TO
−
236)
PAGE 1 OF 1
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Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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