onsemi-BC817-40WT1G
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BC817-40W
45
V
,
0
.5 A, General
Purpose NPN
T
r
ansistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
1
BASE
MAXIMUM RATINGS
(T =
25
°
C)
A
Rating
Symbol
Value
45
Unit
V
2
EMITTER
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
V
CEO
V
CBO
V
EBO
50
V
5.0
V
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
500
mAdc
C
SC−70
CASE 419
STYLE 3
Symbol
Max
460
272
Unit
mW
P
D
Thermal Resistance,
R
°
C/W
q
JA
MARKING DIAGRAM
Junction and Storage
T
e
mperature
Range
T , T
−
5
5 to +150
°
C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
CE M
G
G
2
1. FR−4
Board, 1 oz. Cu, 100 mm
1
CE
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BC817−40WT1G
SC−70
(Pb−Free)
3000 /
T
a
pe &
Reel
NSVBC817−40WT1G
SC−70
(Pb−Free)
3000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2016 − Rev. 2
BC817−40W/D
BC817−40W
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collecto
r
−
E
mitter Breakdown Voltage
V
45
50
−
−
−
−
−
−
V
V
V
(VR)CEO
(I =
10 mA)
C
Collecto
r
−
E
mitter Breakdown Voltage
V
(VR)CES
(V =
0
V
, I
=
1
0
m
A)
EB
C
Emitte
r
−
B
ase Breakdown Voltage
V
5.0
(VR)EBO
(I =
1.0
m
A)
E
Collector Cutoff Current
I
CBO
(V =
20 V)
−
−
−
−
100
5.0
nA
m
A
CB
(V =
20
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
h
FE
−
(I =
100 mA, V
= 1.0 V)
250
40
−
−
600
−
C
CE
(I =
500 mA, V
= 1.0 V)
C
CE
(I =
500 mA, I
= 50 mA)
V
−
−
0.7
V
V
CE(sat)
C
B
(I =
500 mA, V
= 1.0 V)
V
BE(on)
−
−
1.2
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
100
−
−
−
−
MHz
pF
T
(I =
10 mA, V
= 5.0
V
, f =
1
00 MHz)
C
CE
Output Capacitance
C
10
obo
(V =
10
V
, f =
1
.0 MHz)
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
Condition: Pulse Width = 300
m
sec, Duty Cycle
≤
2%
2
BC817−40W
TYPICAL CHARACTERISTICS
700
600
1
I /I
= 10
C
B
150
°
C
V
CE
= 1 V
150
°
C
500
400
300
200
25
°
C
0.1
25
°
C
−55
°
C
−55
°
C
0.01
100
0
0.001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
−55
°
C
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 10
C
B
−55
°
C
25
°
C
25
°
C
0.8
0.7
0.6
0.5
0.4
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
V
CE
= 1 V
T =
25
°
C
A
100
10
0.1
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
3
BC817−40W
TYPICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
+1
T =
25
°
C
J
q
for V
CE(sat)
VC
0
-1
-2
I
C
= 10 mA
100 mA
300 mA
500 mA
q
for V
BE
VB
0.2
0
0.01
0.1
1
I ,
BASE CURRENT (mA)
10
100
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
B
Figure 6. Saturation Region
Figure 7. Temperature Coefficients
100
C
ib
10
C
ob
1
0.1
1
10
100
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 8. Capacitances
1
1 ms
10 ms
100 ms
1 s
Thermal Limit
0.1
0.01
Single Pulse
T
e
st @ T
= 25
°
C
A
0.001
0.01
0.1
1
10
100
V
CE
(Vdc)
Figure 9. Safe Operating Area
4
BC817−40W
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
H
E
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
STYLE 3:
c
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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o
ll Free
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o
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BC817−40W/D
