onsemi-BC818-40LT1G
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BC818-40L, NSVBC818-40L
General Purpose
Transistors
NPN Silicon
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
Compliant
BASE
2
MAXIMUM RATINGS
EMITTER
Rating
Collecto
r
−
E
mitter Voltage
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
Symbol
Value
25
Unit
V
V
CEO
V
CBO
V
EBO
3
30
V
1
5.0
V
2
Collector Current − Continuous
I
500
mAdc
C
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5
B
oard,
P
D
225
1.8
mW
mW/
°
C
A
MARKING DIAGRAMS
Derate above 25
°
C
Thermal Resistance,
Junction−to−Ambient
R
556
°
C/W
q
JA
6G M
G
G
T
o
tal Device Dissipation
P
D
300
2.4
mW
mW/
°
C
A
1
Derate above 25
°
C
6G =
Specific Device Code
Thermal Resistance,
Junction−to−Ambient
R
417
°
C/W
q
JA
M
= Date Code*
G
= Pb−Free Package
Junction and Storage
T
e
mperature
T , T
J
−
5
5 to +150
°
C
stg
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina
= 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
BC818−40LT1G
SOT−23
(Pb−Free)
3000 /
T
a
pe &
Reel
NSVBC818−40LT1G
SOT−23
(Pb−Free)
3000 /
T
a
pe &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
November, 2016 − Rev. 4
BC818−40LT1/D
BC818−40L, NSVBC818−40L
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
25
30
−
−
−
−
−
−
V
V
V
(BR)CEO
(I =
−10 mA)
C
Collecto
r
−
E
mitter Breakdown Voltage
V
(BR)CES
(BR)EBO
(V =
0, I
= −10
m
A)
EB
C
Emitte
r
−
B
ase Breakdown Voltage
V
5.0
(I =
−1.0
m
A)
E
Collector Cutoff Current
I
CBO
(V =
20 V)
−
−
−
−
100
5.0
nA
m
A
CB
(V =
20
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
100 mA, V
= 1.0 V)
250
40
−
−
600
−
C
CE
(I =
500 mA, V
= 1.0 V)
C
CE
Collecto
r
−
E
mitter Saturation Voltage
(I =
500 mA, I
= 50 mA)
V
−
−
0.7
V
V
CE(sat)
C
B
Bas
e
−
E
mitter On Voltage
(I =
500 mA, V
= 1.0 V)
V
BE(on)
−
−
1.2
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
100
−
−
−
−
MHz
pF
T
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
10
V
, f =
1
.0 MHz)
C
10
obo
CB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1000
V
CE
= 1 V
T =
25
°
C
J
100
10
0.1
1.0
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
2
BC818−40L, NSVBC818−40L
1.0
0.8
0.6
0.4
1.0
T =
25
°
C
T =
25
°
C
A
J
V
@ I
/I =
10
C B
BE(sat)
0.8
0.6
V
BE(on)
@ V
= 1 V
CE
I
C
= 10 mA
100 mA
300 mA
500 mA
0.4
0.2
0
0.2
0
V
@ I
/I =
10
C B
CE(sat)
0.01
0.1
1
I ,
BASE CURRENT (mA)
10
100
1
10
100
1000
I ,
COLLECTOR CURRENT (mA)
C
B
Figure 2. Saturation Region
Figure 3. “On” Voltages
100
+1
0
q
for V
CE(sat)
VC
C
ib
10
-1
-2
C
ob
q
for V
BE
VB
1
0.1
1
10
100
1000
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
V ,
REVERSE VOLTAGE (VOLTS)
R
Figure 4. Temperature Coefficients
Figure 5. Capacitances
3
BC818−40L, NSVBC818−40L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
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T
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o
ll Free
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o
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◊
BC818−40LT1/D
