onsemi-BC847AWT1G
| Part # | onsemi-BC847AWT1G |
Download  | onsemi-BC847AWT1G |
BC846, BC847, BC848
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
COLLECTOR
3
Features
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
V
3
SC−70/SOT−323
BC846
BC847
BC848
65
45
30
CASE 419
STYLE 3
1
2
Collector-Base Voltage
Emitter-Base Voltage
V
V
BC846
BC847
BC848
80
50
30
MARKING DIAGRAM
BC846
BC847
BC848
6.0
6.0
5.0
XX M
G
G
Collector Current − Continuous
I
C
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
XX
M
G
= Specific Device Code
= Month Code
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
(Note: Microdot may be in either location)
T
o
tal Device Dissipation FR
−
5
B
oard,
P
D
200
mW
A
Thermal Resistance,
Junction−to−Ambient
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
R
620
°
C/W
°
C
q
JA
Junction and Storage
T
e
mperature
T , T
J
−
5
5 to
+150
stg
1. FR−5
= 1.0 x 0.75 x 0.062 in.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
April, 2015 − Rev. 12
BC846AWT1/D
BC846, BC847, BC848
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
(I =
10 mA)
C
BC846 Series
BC847 Series
BC848 Series
V
65
45
30
−
−
−
−
−
−
V
(BR)CEO
Collecto
r
−
E
mitter Breakdown Voltage
BC846 Series
BC847 Series
BC848 Series
V
80
50
30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
10
m
A, V
= 0)
C
EB
Collecto
r
−
B
ase Breakdown Voltage
(I =
10
m
A)
C
BC846 Series
BC847 Series
BC848 Series
V
V
80
50
30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
1.0
m
A)
E
BC846 Series
BC847 Series
BC848 Series
6.0
6.0
5.0
−
−
−
−
−
−
Collector Cutoff Current (V
= 30 V)
I
−
−
−
−
15
5.0
nA
m
A
CB
CBO
(V =
30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
h
FE
−
−
−
90
150
270
−
−
−
−
(I =
10
m
A, V
= 5.0 V)
C
CE
(I =
2.0 mA, V
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
110
200
420
180
290
520
220
450
800
C
CE
Collecto
r
−
E
mitter Saturation Voltage (I
= 10 mA, I
= 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
Bas
e
−
E
mitter Saturation Voltage
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
E
mitter Saturation Voltage (I
= 10 mA, I
= 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
Bas
e
−
E
mitter Saturation Voltage
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
E
mitter Voltage (I
= 2.0 mA, V
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Bas
e
−
E
mitter Voltage
(I =
10 mA, V
= 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
T
100
−
−
MHz
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V
= 10
V
, f =
1
.0 MHz)
C
−
−
−
−
4.5
10
pF
dB
CB
obo
Noise Figure (I
= 0.2 mA, V
= 5.0 Vdc, R
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
NF
C
CE
S
2
BC846, BC847, BC848
BC846A, BC847A, BC848A
300
200
300
150
°
C
V =
5 V
CE
V
CE
= 1 V
150
°
C
200
25
°
C
25
°
C
−55
°
C
−55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
0.18
I /I
= 20
C
B
150
°
C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
25
°
C
−55
°
C
0.02
0
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
−55
°
C
25
°
C
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
I /I
= 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
3
BC846, BC847, BC848
BC846A, BC847A, BC848A
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
-55
°
C to +125
°
C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA
20 mA
I
C
= 50 mA
I =
100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Collector Saturation Region
Figure 7. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 8. Capacitances
Figure 9. Current−Gain − Bandwidth Product
4
BC846, BC847, BC848
BC846B
600
500
400
600
V
CE
= 1 V
V
CE
= 5 V
150
°
C
25
°
C
150
°
C
500
400
25
°
C
300
200
300
−55
°
C
200
−55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 10. DC Current Gain vs. Collector
Current
Figure 11. DC Current Gain vs. Collector
Current
0.30
I /I
= 20
C
B
150
°
C
0.25
0.20
0.15
25
°
C
0.10
0.05
0
−55
°
C
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 20
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
5
BC846, BC847, BC848
BC846B
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
A
1.4
100 mA
200 mA
20 mA
50 mA
1.8
q
for V
BE
VB
-55
°
C to 125
°
C
I =
10 mA
C
2.2
2.6
3.0
0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 15. Collector Saturation Region
Figure 16. Base−Emitter Temperature Coefficient
40
T =
25
°
C
A
V
= 5 V
CE
500
T =
25
°
C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 17. Capacitance
Figure 18. Current−Gain − Bandwidth Product
6
BC846, BC847, BC848
BC847B, BC848B
600
500
400
300
200
600
V
CE
= 1 V
V
CE
= 5 V
150
°
C
25
°
C
150
°
C
500
400
300
25
°
C
−55
°
C
200 −55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 19. DC Current Gain vs. Collector
Current
Figure 20. DC Current Gain vs. Collector
Current
0.30
I /I
= 20
C
B
0.25
0.20
0.15
0.10
150
°
C
25
°
C
−55
°
C
0.05
0
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 20
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
7
BC846, BC847, BC848
BC847B, BC848B
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
-55
°
C to +125
°
C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA
20 mA
I
C
= 50 mA
I =
100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 24. Collector Saturation Region
Figure 25. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 26. Capacitances
Figure 27. Current−Gain − Bandwidth Product
8
BC846, BC847, BC848
BC847C, BC848C
1000
900
1000
150
°
C
V
CE
= 1 V
900
800
700
600
500
400
300
200
V
CE
= 5 V
150
°
C
800
700
600
500
400
300
200
25
°
C
25
°
C
−55
°
C
−55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 28. DC Current Gain vs. Collector
Current
Figure 29. DC Current Gain vs. Collector
Current
0.30
I /I
= 20
C
B
0.25
0.20
0.15
0.10
150
°
C
25
°
C
−55
°
C
0.05
0
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 20
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current
Figure 32. Base Emitter Voltage vs. Collector
Current
9
BC846, BC847, BC848
BC847C, BC848C
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
-55
°
C to +125
°
C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA
20 mA
I
C
= 50 mA
I =
100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 33. Collector Saturation Region
Figure 34. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 35. Capacitances
Figure 36. Current−Gain − Bandwidth Product
10
BC846, BC847, BC848
1
1
100 mS
10 mS
1 S
100 mS
10 mS
1 S
1 mS
1 mS
0.1
0.1
Thermal Limit
Thermal Limit
0.01
0.01
0.001
0.001
1
10
, COLLECTOR EMITTER VOLTAGE (V)
100
0.1
1
10
100
V
CE
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for
BC846A, BC846B
Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C
1
100 mS
10 mS
1 mS
0.1
1 S
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C
11
BC846, BC847, BC848
DEVICE ORDERING AND SPECIFIC MARKING INFORMATION
†
Device
BC846BWT1G
Specific Marking Code
Package
Shipping
1B
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SBC846BWT1G*
BC847AWT1G
1E
1F
1G
1G
SBC847AWT1G*
BC847BWT1G
SBC847BWT1G*
BC847CWT1G
SBC847CWT1G*
BC847CWT3G
SBC847CWT3G*
BC848BWT1G
NSVBC848BWT1G*
BC848CWT1G
SC−70 (SOT−323)
(Pb−Free)
1K
1L
3,000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
70 (SOT
−
323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX M
G
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1.
ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1.
ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1.
CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1.
BASE
STYLE 8:
PIN 1.
GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1.
EMITTER
PIN 1.
ANODE
PIN 1.
CATHODE
2. ANODE
PIN 1.
CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC
−
70 (SOT
−
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onsemi
and
are trademarks of Semiconductor Components Industries, LLC dba
onsemi
or its subsidiaries in the United States and/or other countries.
onsemi
reserves
the right to make changes without further notice to any products herein.
onsemi
makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
onsemi
does not convey any license under its patent rights nor the rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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