onsemi-BC847BLT1G
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BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
•
Moisture Sensitivity Level: 1
•
ESD Rating − Human Body Model: > 4000 V
ESD Rating
− Machine Model: > 400 V
COLLECTOR
3
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
1
BASE
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
2
EMITTER
Compliant
MAXIMUM RATINGS
3
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
1
BC846
BC847, BC850
BC848, BC849
65
45
30
2
SOT−23
CASE 318
STYLE 6
Collector−Base Voltage
Emitter−Base Voltage
Vdc
Vdc
BC846
BC847, BC850
BC848, BC849
80
50
30
MARKING DIAGRAM
BC846
BC847, BC850
BC848, BC849
6.0
6.0
5.0
XX M
G
G
Collector Current − Continuous
I
C
100
mAdc
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XX =
Device Code
M
= Date Code*
G
= Pb−Free Package
THERMAL CHARACTERISTICS
(Note: Microdot may be in either location)
Characteristic
Symbol
Max
Unit
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
o
tal Device Dissipation FR
−
5
B
oard,
P
D
225
mW
T =
25
°
C
Derate above 25
°
C
A
1.8
mW/
°
C
°
C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Thermal Resistance,
R
556
q
JA
T
o
tal Device Dissipation
P
D
300
mW
T =
25
°
C
Derate above 25
°
C
A
2.4
mW/
°
C
°
C/W
Thermal Resistance,
R
417
q
JA
Junction and Storage
T
e
mperature Range
T , T
−
5
5 to
+150
°
C
J
stg
1. FR
−
5
=
1
.0
ꢀ
0.75
ꢀ
0.062 in.
2. Alumina
= 0.4
ꢀ
0.3
ꢀ
0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
November, 2016 − Rev. 16
BC846ALT1/D
BC846ALT1G Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V
65
45
30
−
−
−
−
−
−
V
(BR)CEO
(I =
10 mA)
C
Collecto
r
−
E
mitter Breakdown Voltage
BC846A, B
BC847A, B, C BC850B, C
BC848A, B, C, BC849B, C
V
80
50
30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
10
m
A, V
= 0)
C
EB
Collecto
r
−
B
ase Breakdown Voltage
(I =
10
m
A)
C
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V
V
80
50
30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
1.0
m
A)
E
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
6.0
6.0
5.0
−
−
−
−
−
−
Collector Cutoff Current (V
= 30 V)
I
−
−
−
−
15
5.0
nA
m
A
CB
CBO
(V =
30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
h
FE
−
−
−
90
150
270
−
−
−
−
(I =
10
m
A, V
= 5.0 V)
C
CE
(I =
2.0 mA, V
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
110
200
180
290
220
450
C
CE
BC847C, BC848C, BC849C, BC850C
420
520
800
Collecto
r
−
E
mitter Saturation Voltage (I
= 10 mA, I
= 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
Collecto
r
−
E
mitter Saturation Voltage
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
E
mitter Saturation Voltage (I
= 10 mA, I
= 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
BE(sat)
Bas
e
−
E
mitter Saturation Voltage
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
E
mitter Voltage (I
= 2.0 mA, V
= 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Bas
e
−
E
mitter Voltage
(I =
10 mA, V
= 5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
100
−
−
−
−
MHz
T
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V
= 10
V
, f =
1
.0 MHz)
C
4.5
pF
dB
CB
obo
Noise Figure (I
= 0.2 mA,
NF
C
V
= 5.0 Vdc, R
= 2.0 k
W
,
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
−
−
−
−
10
4.0
CE
S
f = 1.0 kHz, BW = 200 Hz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
BC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
300
200
300
V
CE
= 5 V
V
CE
= 1 V
150
°
C
150
°
C
200
25
°
C
25
°
C
−55
°
C
−55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
0.18
I /I
= 20
C
B
150
°
C
0.16
0.14
0.12
0.10
0.08
0.06
0.04
25
°
C
−55
°
C
0.02
0
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1.2
−55
°
C
25
°
C
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
I /I
= 20
0.9
0.8
0.7
0.6
0.5
0.4
C
B
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
3
BC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
-55
°
C to +125
°
C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA
20 mA
I
C
= 50 mA
I =
100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Collector Saturation Region
Figure 7. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 8. Capacitances
Figure 9. Current−Gain − Bandwidth Product
4
BC846ALT1G Series
BC846B, SBC846B
600
500
400
600
V
CE
= 1 V
V
CE
= 5 V
150
°
C
150
°
C
500
400
300
200
25
°
C
25
°
C
300
200
−55
°
C
−55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 10. DC Current Gain vs. Collector
Current
Figure 11. DC Current Gain vs. Collector
Current
0.30
I /I
= 20
C
B
150
°
C
0.25
0.20
0.15
25
°
C
0.10
0.05
0
−55
°
C
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 20
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
5
BC846ALT1G Series
BC846B, SBC846B
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
A
1.4
100 mA
200 mA
20 mA
50 mA
1.8
q
for V
BE
VB
-55
°
C to 125
°
C
I =
10 mA
C
2.2
2.6
3.0
0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 15. Collector Saturation Region
Figure 16. Base−Emitter Temperature Coefficient
40
T =
25
°
C
A
V
= 5 V
CE
500
T =
25
°
C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 17. Capacitance
Figure 18. Current−Gain − Bandwidth Product
6
BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B
600
500
400
300
200
600
V
CE
= 1 V
V
CE
= 5 V
150
°
C
25
°
C
150
°
C
500
400
300
25
°
C
200 −55
°
C
−55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 19. DC Current Gain vs. Collector
Current
Figure 20. DC Current Gain vs. Collector
Current
0.30
I /I
= 20
C
B
0.25
0.20
0.15
0.10
150
°
C
25
°
C
−55
°
C
0.05
0
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 20
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
7
BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
-55
°
C to +125
°
C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA
20 mA
I
C
= 50 mA
I =
100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 24. Collector Saturation Region
Figure 25. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 26. Capacitances
Figure 27. Current−Gain − Bandwidth Product
8
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
1000
900
1000
V
CE
= 1 V
900
800
700
600
500
400
300
200
V
CE
= 5 V
150
°
C
150
°
C
800
700
600
500
400
300
200
25
°
C
25
°
C
−55
°
C
−55
°
C
100
0
100
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 28. DC Current Gain vs. Collector
Current
Figure 29. DC Current Gain vs. Collector
Current
0.30
I /I
= 20
C
B
0.25
0.20
0.15
0.10
150
°
C
25
°
C
−55
°
C
0.05
0
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 5 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
I /I
= 20
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.3
0.2
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current
Figure 32. Base Emitter Voltage vs. Collector
Current
9
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
2.0
1.6
1.2
0.8
0.4
0
1.0
T =
25
°
C
-55
°
C to +125
°
C
A
1.2
1.6
2.0
2.4
2.8
I
C
= 200 mA
I
=
I
=
10 mA
20 mA
I
C
= 50 mA
I =
100 mA
C
C
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 33. Collector Saturation Region
Figure 34. Base−Emitter Temperature
Coefficient
10
7.0
5.0
400
300
T =
25
°
C
A
200
C
ib
V
= 10 V
CE
100
80
T =
25
°
C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6
0.8 1.0
2.0
4.0 6.0
8.0 10
20
40
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 35. Capacitances
Figure 36. Current−Gain − Bandwidth Product
10
BC846ALT1G Series
1
1
100 mS
10 mS
1 S
100 mS
10 mS
1 S
1 mS
1 mS
0.1
0.1
Thermal Limit
Thermal Limit
0.01
0.01
0.001
0.001
1
10
, COLLECTOR EMITTER VOLTAGE (V)
100
0.1
1
10
100
V
CE
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for
BC846A, BC846B
Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
1
100 mS
10 mS
1 mS
0.1
1 S
Thermal Limit
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
11
BC846ALT1G Series
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BC846ALT1G
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SBC846ALT1G*
BC846ALT3G
1A
BC846BLT1G
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
SBC846BLT1G*
BC846BLT3G
1B
1E
1F
SBC846BLT3G*
BC847ALT1G
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
BC847ALT3G
BC847BLT1G
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
SBC847BLT1G*
BC847BLT3G
NSVBC847BLT3G*
BC847CLT1G
SBC847CLT1G*
BC847CLT3G
BC848ALT1G
1G
1J
SOT−23
(Pb−Free)
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
BC848BLT1G
3,000 /
T
a
pe & Reel
SBC848BLT1G*
BC848BLT3G
1K
1L
2B
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
BC848CLT1G
BC848CLT3G
BC849BLT1G
3,000 /
T
a
pe & Reel
NSVBC849BLT1G*
BC849BLT3G
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
BC849CLT1G
BC849CLT3G
BC850BLT1G
2C
2F
2G
NSVBC850BLT1G*
BC850CLT1G
NSVBC850CLT1G*
3,000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
12
BC846ALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
STYLE 6:
SIDE VIEW
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
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LITERATURE FULFILLMEN
T
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◊
BC846ALT1/D
