onsemi-BC847CDW1T1G
| Part # | onsemi-BC847CDW1T1G |
Download  | onsemi-BC847CDW1T1G |
BC846BDW1, BC847BDW1,
BC848CDW1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
SOT−363/SC−88
CASE 419B
STYLE 1
•
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and P
P
A
P Capable
(3)
(2)
(1)
Q
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Q
1
2
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848
Unit
(4)
(5)
(6)
Collecto
r
−
E
mitter Voltage
Collecto
r
−
B
ase Voltage
Emitte
r
−
B
ase Voltage
V
V
V
65
80
45
50
30
30
V
V
CEO
CBO
EBO
MARKING DIAGRAM
6.0
100
6.0
100
5.0
100
V
Collector Current −
Continuous
I
C
mAdc
6
1x M
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
G
1
THERMAL CHARACTERISTICS
1x = Specific Device Code
= B,
F
,
G
, L
M =
Date Code
x
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation
Per Device
P
D
380
250
mW
mW
G
= Pb−Free Package
(Note: Microdot may be in either location)
T =
25
°
C
A
Derate Above 25
°
C
3.0
mW/
°
C
°
C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Thermal Resistance,
Junction to Ambient
R
q
JA
328
Junction and Storage
T
e
mperature
Range
T , T
−
5
5 to +150
°
C
J
stg
1. FR−5
= 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2016 − Rev. 11
BC846BDW1T1/D
BC846BDW1, BC847BDW1, BC848CDW1
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
V
V
(BR)CEO
(I =
10 mA)
C
BC846
BC847
BC848
65
45
30
−
−
−
−
−
−
Collecto
r
−
E
mitter Breakdown Voltage
V
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
10
m
A, V
= 0)
C
EB
BC846
BC847
BC848
80
50
30
−
−
−
−
−
−
Collecto
r
−
B
ase Breakdown Voltage
V
V
(I =
10
m
A)
C
BC846
BC847
BC848
80
50
30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
1.0
m
A)
E
BC846
BC847
BC848
6.0
6.0
5.0
−
−
−
−
−
−
Collector Cutoff Current
I
CBO
(V =
30 V)
−
−
−
−
15
5.0
nA
m
A
CB
(V =
30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I =
10
m
A, V
= 5.0 V)
BC846B, BC847B
BC847C, BC848C
C
CE
−
−
150
270
−
−
(I =
2.0 mA, V
= 5.0 V)
BC846B, BC847B
BC847C, BC848C
C
CE
200
420
290
520
450
800
Collecto
r
−
E
mitter Saturation Voltage
V
V
V
CE(sat)
(I =
10 mA, I
= 0.5 mA)
−
−
−
−
0.25
0.6
C
B
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
10 mA, I
= 0.5 mA)
V
BE(sat)
−
−
0.7
0.9
−
−
C
B
(I =
100 mA, I
= 5.0 mA)
C
B
Bas
e
−
E
mitter Voltage
(I =
2.0 mA, V
= 5.0 V)
V
BE(on)
mV
580
−
660
−
700
770
C
CE
(I =
10 mA, V
= 5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
MHz
pF
T
(I =
10 mA, V
= 5.0 Vdc, f = 100 MHz)
100
−
−
−
−
−
C
CE
Output Capacitance
(V =
10
V
, f =
1
.0 MHz)
CB
C
obo
4.5
10
Noise Figure
NF
dB
(I =
0.2 mA, V
= 5.0 Vdc, R
= 2.0 k
W
,f = 1.0 kHz, BW = 200 Hz)
−
C
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
600
500
400
300
200
100
0
600
V
CE
= 10 V
V
CE
= 5 V
500
400
300
200
100
0
150
°
C
25
°
C
150
°
C
25
°
C
−55
°
C
−55
°
C
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain at V
CE
= 5 V
Figure 2. DC Current Gain at V
CE
= 10 V
0.25
0.20
0.15
0.10
0.05
0.00
0.3
0.25
0.2
I /I
= 10
C
B
I /I
= 20
C
B
0.15
0.1
150
°
C
25
°
C
150
°
C
25
°
C
−55
°
C
0.05
0
−55
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 3. V
CE(sat)
at I
C
/I
B
= 10
Figure 4. V
CE(sat)
at I
C
/I
B
= 20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
I /I
= 10
I /I
= 20
C
B
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 5. V
BE(sat)
at I
C
/I
B
= 10
Figure 6. V
BE(sat)
at I
C
/I
B
= 20
3
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC846BDW1
1000
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
V
= 10 V
CE
V
= 5 V
CE
T =
25
°
C
A
−55
°
C
25
°
C
100
150
°
C
10
0.1
0.0001
0.001
0.01
0.1
1
10
100
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. V
BE(on)
at V
CE
= 5 V
Figure 8. Current − Gain − Bandwidth Product
10
2
1.6
1.2
0.8
0.4
0
T =
25
°
C
A
T =
25
°
C
A
C
C
I =
C
100 mA
ib
I
=
I
=
C
C
I
=
C
10 mA
50 mA
20 mA
ob
1
0.1
1
10
100
0.01
0.1
1
10
100
V ,
REVERSE VOLTAGE (V)
R
I ,
BASE CURRENT (mA)
B
Figure 9. Capacitances
Figure 10. Collector Saturation Region
−0.2
−0.6
−1
V
CE
= 5 V
−1.4
−1.8
−2.2
−2.6
−3
q
, for V
BE
VB
−55
°
C to 150
°
C
0.1
1
10
100
I ,
BASE CURRENT (mA)
B
Figure 11. Base−Emitter Temperature Coefficient
4
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC847BDW1
600
500
400
300
200
100
0
600
V
= 10 V
V
= 5 V
CE
CE
150
°
C
150
°
C
500
400
300
200
100
0
25
°
C
25
°
C
−55
°
C
−55
°
C
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 12. DC Current Gain at V
CE
= 5 V
Figure 13. DC Current Gain at V
CE
= 10 V
0.25
0.20
0.15
0.10
0.05
0.00
0.30
0.25
0.20
0.15
0.10
0.05
0.00
I /I
= 10
I /I
= 20
C
B
C
B
25
°
C
150
°
C
25
°
C
150
°
C
−55
°
C
0.01
−55
°
C
0.0001
0.001
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 14. V
CE
at I
C
/I
B
= 10
Figure 15. V
CE
at I
C
/I
B
= 20
1.20
1.00
0.80
0.60
0.40
0.20
0.00
1.20
1.00
0.80
0.60
0.40
0.20
0.00
I /I
= 10
C
B
I /I
= 20
C B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 16. V
BE(sat)
at I
C
/I
B
= 10
Figure 17. V
BE(sat)
at I
C
/I
B
= 20
5
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC847BDW1
1000
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
V
= 10 V
V
= 5 V
CE
CE
T =
25
°
C
A
−55
°
C
25
°
C
100
150
°
C
10
0.1
0.0001
0.001
0.01
0.1
1
10
100
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 18. V
BE(on)
at V
CE
= 5 V
Figure 19. Current − Gain − Bandwidth
Product
2
1.6
1.2
0.8
0.4
0
10
T =
25
°
C
A
T =
25
°
C
A
I
=
C
I
C
=
C
ib
10 mA
100 mA
I
=
C
I
=
C
50 mA
20 mA
C
ob
1
0.1
1
10
100
0.01
0.1
1
10
100
V ,
REVERSE VOLTAGE (V)
R
I ,
BASE CURRENT (mA)
B
Figure 20. Capacitances
Figure 21. Collector Saturation Region
V
CE
= 5 V
−0.2
−0.6
−1
−1.4
−1.8
−2.2
−2.6
−3
q
, for V
BE
VB
−55
°
C to 150
°
C
0.1
1
10
100
I ,
BASE CURRENT (mA)
B
Figure 22. Base−Emitter Temperature Coefficient
6
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1000
900
800
700
600
500
400
300
200
100
0
1000
V
= 5 V
150
°
C
V
= 10 V
CE
CE
150
°
C
900
800
700
600
500
400
300
200
100
0
25
°
C
25
°
C
−55
°
C
−55
°
C
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 23. DC Current Gain at V
CE
= 5 V
Figure 24. DC Current Gain at V
CE
= 10 V
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.30
0.25
0.20
0.15
0.10
0.05
0.00
I /I
= 10
I /I
= 20
C B
C
B
150
°
C
150
°
C
25
°
C
25
°
C
−55
°
C
−55
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 25. V
CE
at I
C
/I
B
= 10
Figure 26. V
CE
at I
C
/I
B
= 20
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I /I
= 10
I /I
= 20
C B
C
B
−55
°
C
25
°
C
−55
°
C
25
°
C
150
°
C
150
°
C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (A)
C
Figure 27. V
BE(sat)
at I
C
/I
B
= 10
Figure 28. V
BE(sat)
at I
C
/I
B
= 20
7
BC846BDW1, BC847BDW1, BC848CDW1
TYPICAL CHARACTERISTICS − BC848CDW1
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
= 5 V
CE
V
= 10 V
CE
T =
25
°
C
A
−55
°
C
25
°
C
100
150
°
C
10
0.1
0.0001
0.001
0.01
0.1
1
10
100
I ,
COLLECTOR CURRENT (A)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 29. V
BE(on)
at V
CE
= 5 V
Figure 30. Current − Gain − Bandwidth
Product
2
1.6
1.2
0.8
0.4
0
10
T =
25
°
C
A
T =
25
°
C
A
I
=
I
=
C
C
10 mA
20 mA
C
C
ib
I
=
C
50 mA
I
C
=
ob
100 mA
1
0.1
1
10
100
0.01
0.1
1
10
100
V ,
REVERSE VOLTAGE (V)
R
I ,
BASE CURRENT (mA)
B
Figure 31. Capacitances
Figure 32. Collector Saturation Region
V
CE
= 5 V
−0.2
−0.6
−1
−1.4
−1.8
−2.2
−2.6
−3
q
, for V
BE
VB
−55
°
C to 150
°
C
0.1
1
10
100
I ,
BASE CURRENT (mA)
B
Figure 33. Base−Emitter Temperature Coefficient
8
BC846BDW1, BC847BDW1, BC848CDW1
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
Z
q
JA
R
q
P
(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
t
1
T
− T
= P
R (t)
q
JC
J(pk)
C
(pk)
0.01
0.01
t
2
DUTY CYCLE, D = t
/t
1
2
SINGLE PULSE
0.001
0
1.0
10
100
1.0ꢀk
10ꢀk
100ꢀk
1.0ꢀM
t, TIME (ms)
Figure 34. Thermal Response
-200
The safe operating area curves indicate I
−V limits
C
CE
1 s
3 ms
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
-100
-50
T =
25
°
C
T =
25
°
C
A
J
= 150
°
C; T
J(pk)
C
or T
is variable depending upon conditions. Pulse
A
curves are valid for duty cycles to 10% provided T
≤
BC558
BC557
BC556
J(pk)
150
°
C. T
may be calculated from the data in
J(pk)
-10
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 35. Active Region Safe Operating Area
9
BC846BDW1, BC847BDW1, BC848CDW1
ORDERING INFORMATION
Device
†
Markings
Package
Shipping
BC846BDW1T1G
1B
SOT−363
(Pb−Free)
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
SBC846BDW1T1G*
BC847BDW1T1G
1B
1F
1F
1F
1F
1F
1G
1G
1L
1L
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SBC847BDW1T1G*
BC847BDW1T3G
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SBC847BDW1T3G*
NSVBC847BDW1T2G*
BC847CDW1T1G
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SBC847CDW1T1G*
BC848CDW1T1G
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
NSVBC848CDW1T1G*
SOT−363
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
1
DATE 11 DEC 2012
SCALE 2:1
2X
aaa H
D
NOTES:
D
H
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
A
3. DIMENSIONS
D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS
D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS
A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS
b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TI
P
.
7. DIMENSION
b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM
MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOO
T
.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa
C
2X
2X 3 TIPS
bbb H
D
e
MILLIMETERS
DIM MIN
NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−−
0.043
−−−
0.004
6X
b
B
TOP VIEW
A
−−−
−−−
1.10
A1
0.00
A2
0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1
1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
GENERIC
MARKING DIAGRAM*
RECOMMENDED
SOLDERING FOOTPRINT*
6
6X
0.30
XXXM
G
6X
0.66
G
1
2.50
XXX =
Specific Device Code
M
= Date Code*
G
= Pb
−
Free Package
0.65
(Note: Microdot may be in either location)
PITCH
*Date Code orientation and/or position may
vary depending upon manufacturing location.
DIMENSIONS: MILLIMETERS
*For additional information on our Pb
−
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
SC
−
88/SC70
−
6/SOT
−
363
CASE 419B
−
02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1.
EMITTER 2
2. BASE
2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
STYLE 5:
STYLE 6:
PIN 1.
ANODE 2
2. N/C
PIN 1.
CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
PIN 1.
ANODE
2. ANODE
3. COLLECTOR
1
4. EMITTER
1
5. BASE
1
3. COLLECTOR
3. CATHODE
1
4. ANODE
1
5. N/C
4. EMITTER
5. BASE
6. COLLECTOR
2
6. ANODE
6. CATHODE
6. CATHODE
2
STYLE 7:
STYLE 8:
CANCELLED
STYLE 9:
STYLE 10:
STYLE 11:
STYLE 12:
PIN 1.
SOURCE 2
2. DRAIN
2
3. GATE
1
PIN 1.
EMITTER 2
2. EMITTER
1
3. COLLECTOR
1
4. BASE
1
PIN 1.
SOURCE 2
2. SOURCE
1
3. GATE
1
PIN 1.
CATHODE 2
2. CATHODE
2
3. ANODE
1
PIN 1.
ANODE 2
2. ANODE
2
3. CATHODE
1
4. ANODE
1
5. ANODE
1
6. CATHODE
2
4. SOURCE
1
5. DRAIN
1
6. GATE
2
4. DRAIN
1
5. DRAIN
2
6. GATE
2
4. CATHODE
1
5. CATHODE
1
6. ANODE
2
5. BASE
2
6. COLLECTOR
2
STYLE 13:
PIN 1.
ANODE
2. N/C
STYLE 14:
PIN 1.
VREF
2. GND
STYLE 15:
STYLE 16:
STYLE 17:
STYLE 18:
PIN 1.
VIN1
2. VCC
PIN 1.
ANODE 1
2. ANODE
2
PIN 1.
BASE 1
2. EMITTER
2
3. COLLECTOR
2
4. BASE
2
PIN 1.
BASE 1
2. EMITTER
1
3. COLLECTOR
2
4. BASE
2
3. COLLECTOR
4. EMITTER
5. BASE
3. GND
3. ANODE
3
3. VOUT2
4. VIN2
5. GND
6. VOUT1
4. IOUT
5. VEN
6. VCC
4. CATHODE
3
5. CATHODE
2
6. CATHODE
1
5. EMITTER
1
6. COLLECTOR
1
5. EMITTER
2
6. COLLECTOR
1
6. CATHODE
STYLE 19:
PIN 1.
I OUT
2. GND
STYLE 20:
STYLE 21:
PIN 1.
ANODE 1
2. N/C
STYLE 22:
PIN 1.
D1 (i)
2. GND
STYLE 23:
PIN 1.
Vn
2. CH1
3. Vp
STYLE 24:
PIN 1.
CATHODE
2. ANODE
PIN 1.
COLLECTOR
2. COLLECTOR
3. BASE
3. GND
3. ANODE
2
4. CATHODE
2
5. N/C
3. D2
(i)
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
4. V
CC
4. EMITTER
5. COLLECTOR
6. COLLECTOR
4. D2
(c)
5. VBUS
6. D1
(c)
4. N/C
5. V
EN
5. CH2
6. N/C
6. V
REF
6. CATHODE
1
STYLE 30:
STYLE 25:
STYLE 26:
PIN 1.
SOURCE 1
2. GATE
1
STYLE 27:
PIN 1.
BASE 2
2. BASE
1
STYLE 28:
PIN 1.
DRAIN
2. DRAIN
3. GATE
STYLE 29:
PIN 1.
ANODE
2. ANODE
PIN 1.
SOURCE 1
2. DRAIN
2
3. DRAIN
2
4. SOURCE
2
5. GATE
1
PIN 1.
BASE 1
2. CATHODE
3. COLLECTOR
2
4. BASE
2
3. DRAIN
2
4. SOURCE
2
5. GATE
2
3. COLLECTOR
1
4. EMITTER
1
5. EMITTER
2
6. COLLECTOR
2
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
4. SOURCE
5. DRAIN
6. DRAIN
5. EMITTER
6. COLLECTOR
1
6. DRAIN
1
6. DRAIN
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC
−
88/SC70
−
6/SOT
−
363
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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