onsemi-BC848BPDW1T1

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ꢁ

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ꢁ

ꢂ

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ꢄ

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ꢂ

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ꢀ

ꢁ

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ꢅ

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ꢆ

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ꢉ

ꢈ

ꢈ

ꢈ

ꢈ

ꢊ

ꢊ

ꢊ

ꢆ ꢋꢌ

 

ꢍ ꢎ

 

ꢏꢐꢏ ꢑ

 

ꢌꢍ ꢅ

 

ꢋꢑ ꢒ

 

ꢓꢔ ꢏ  

ꢉꢑꢌ ꢐ ꢔꢕꢔ ꢖꢓꢑ

 

ꢔ  

(3)  

1

(2)  

(1)  

Q

NPN/PNP Duals  

These transistors are designed for general purpose amplifier  

applications. They are housed in the SOT

−

363/SC

−

88 which is  

designed for low power surface mount applications.  

Q

2

•

Device Marking:  

(4)  

(5)  

(6)  

BC847BPDW1T1 = 13F  

BC847CPDW1T1 = 13G  

BC848BPDW1T1 = 13K  

BC848CPDW1T1 = 13L  

6

5

4

MAXIMUM RATINGS

−

NPN  

1

2

3

Rating  

Symbol  

BC847  

45  

BC848  

30  

Unit  

V

Collecto

r

−

Emitter Voltage  

Collecto

r

−

Base Voltage  

Emitte

r

−

Base Voltage  

V

CEO  

V

CBO  

V

EBO  

SOT

−

363/SC

−

88  

CASE 419B  

STYLE 1  

50  

30  

V

6.0  

5.0  

V

Collector Current — Continuous  

I

C

100  

100  

mAdc  

MAXIMUM RATINGS

−

PNP  

Rating  

DEVICE MARKING  

Symbol  

BC847  

−

45  

BC848  

−

30  

Unit  

V

Collecto

r

−

Emitter Voltage  

Collecto

r

−

Base Voltage  

Emitte

r

−

Base Voltage  

Collector Current — Continuous  

V

CEO  

V

CBO  

V

EBO  

−

50  

−

30  

V

See

T

a

ble  

−

5.0  

−

100  

−

5.0  

−

100  

V

I

C

mAdc  

THERMAL CHARACTERISTICS  

Characteristic  

Symbol  

Max  

Unit  

ORDERING INFORMATION  

T

o

tal Device Dissipation  

Per Device  

P

380  

250  

mW  

D

Device  

Package  

BC847BPDW1T1 SOT

−

363  

BC847CPDW1T1 SOT

−

363  

BC848BPDW1T1 SOT

−

363  

BC848CPDW1T1 SOT

−

363  

Shipping  

(1)  

FR

−

5 Board  

= 25

°

C  

3000 Units/Reel  

3000 Units/Reel  

3000 Units/Reel  

3000 Units/Reel  

T

A

Derate Above 25

°

C  

3.0  

mW/

°

C  

°

C/W  

Thermal Resistance,  

Junction to Ambient  

R

328  

ꢀ

JA  

Junction and Storage  

T

e

mperature Range  

T ,

 

T  

J stg  

−

55 to +150  

°

C  

1. FR

−

5 = 1.0 x 0.75 x 0.062 in  



Semiconductor Components Industries, LLC, 2001  

385  

Publication Order Number:  

February, 2000

−

Rev. 0  

BC847BPDW1T1/D  

BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1  

ELECTRICAL CHARACTERISTICS (NPN)

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Collecto

r

−

Emitter Breakdown Voltage  

(I =

 

10 mA)  

C

V

V

(BR)CEO  

BC847 Series  

BC848 Series  

45  

30  

—

—

—

—

Collecto

r

−

Emitter Breakdown Voltage  

V

V

V

V

(BR)CES  

(BR)CBO  

(BR)EBO  

(I =

 

10

µ

A, V  

= 0)  

BC847 Series  

BC848 Series  

50  

30  

—

—

—

—

C

EB  

Collecto

r

−

Base Breakdown Voltage  

(I =

 

10

ꢁ

A)  

C

V

V

BC847 Series  

BC848 Series  

50  

30  

—

—

—

—

Emitte

r

−

Base Breakdown Voltage  

(I =

 

1.0

ꢁ

A)  

E

BC847 Series  

BC848 Series  

6.0  

5.0  

—

—

—

—

Collector Cutoff Current (V  

= 30 V)  

= 30

V

, T

 

=

1

50

°

C)  

I

—

—

—

—

15  

5.0  

nA  

µ

A  

CB  

CB  

CBO  

(V  

A

ON CHARACTERISTICS  

DC Current Gain  

h

FE  

—

(I =

 

10

µ

A, V  

= 5.0 V)  

BC847B, BC848B  

BC847C, BC848C  

—

—

150  

270  

—

—

C

CE  

(I =

 

2.0 mA, V  

C CE  

= 5.0 V)  

BC847B, BC848B  

BC847C, BC848C  

200  

420  

290  

520  

475  

800  

Collecto

r

−

Emitter Saturation Voltage (I

 

= 10 mA, I

 

= 0.5 mA)  

V

—

—

—

—

0.25  

0.6  

V

V

C

B

CE(sat)  

Collecto

r

−

Emitter Saturation Voltage

(I =

 

100 mA, I

 

= 5.0 mA)  

C

B

Bas

e

−

Emitter Saturation Voltage (I

 

= 10 mA, I

 

= 0.5 mA)  

V

—

—

0.7  

0.9  

—

—

C

B

BE(sat)  

Bas

e

−

Emitter Saturation Voltage

(I =

 

100 mA, I

 

= 5.0 mA)  

C

B

Bas

e

−

Emitter Voltage (I

 

= 2.0 mA, V  

= 5.0 V)  

= 5.0 V)  

V

BE(on)  

580  

—

660  

—

700  

770  

mV  

C

CE  

CE  

Bas

e

−

Emitter Voltage

(I =

 

10 mA, V  

C

SMALL

−

SIGNAL CHARACTERISTICS  

Curren

t

−

Gain — Bandwidth Product  

f

100  

—

—

—

—

MHz  

T

(I =

 

10 mA, V  

= 5.0 Vdc, f = 100 MHz)  

= 10

V

, f =

1

.0 MHz)  

Noise Figure (I

 

= 0.2 mA,  

C

CE  

Output Capacitance (V  

CB  

C

4.5  

pF  

dB  

obo  

NF  

C

V

= 5.0 Vdc, R

 

= 2.0 k

Ω

,  

BC847B, BC848B  

BC847C, BC848C  

—

—

—

—

10  

4.0  

CE  

S

f = 1.0 kHz, BW = 200 Hz)  

386  

BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1  

ELECTRICAL CHARACTERISTICS (PNP)

(T =

 

25

°

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Collecto

r

−

Emitter Breakdown Voltage  

(I =

 

−

10 mA)  

C

V

V

(BR)CEO  

BC847 Series  

BC848 Series  

−

45  

−

30  

—

—

—

—

Collecto

r

−

Emitter Breakdown Voltage  

V

V

V

V

(BR)CES  

(BR)CBO  

(BR)EBO  

(I =

 

−

10

µ

A, V  

= 0)  

BC847 Series  

BC848 Series  

−

50  

−

30  

—

—

—

—

C

EB  

Collecto

r

−

Base Breakdown Voltage  

(I =

 

−

10

ꢁ

A)  

C

V

V

BC847 Series  

BC848 Series  

−

50  

−

30  

—

—

—

—

Emitte

r

−

Base Breakdown Voltage  

(I =

 

−

1.0

ꢁ

A)  

E

BC847 Series  

BC848 Series  

−

5.0  

−

5.0  

—

—

—

—

Collector Cutoff Current (V  

Collector Cutoff Current

(V  

=

−

30 V)  

=

−

30

V

, T

 

=

1

50

°

C)  

I

—

—

—

—

−

15  

−

4.0  

nA  

µ

A  

CB  

CB  

CBO  

A

ON CHARACTERISTICS  

DC Current Gain  

(I =

 

−

10

µ

A, V  

C

h

FE  

—

=

−

5.0 V)  

BC847B, BC848B  

BC847C, BC848C  

—

—

150  

270  

—

—

CE  

(I =

 

−

2.0 mA, V  

C CE  

=

−

5.0 V)

 

BC847B, BC848B  

200  

420  

290  

520  

475  

800  

BC847C, BC848C  

Collecto

r

−

Emitter Saturation Voltage  

(I =

 

−

10 mA, I

 

=

−

0.5 mA)  

V

V

V

V

CE(sat)  

—

—

—

—

−

0.3  

−

0.65  

C

B

(I =

 

−

100 mA, I

 

=

−

5.0 mA)  

C

B

Bas

e

−

Emitter Saturation Voltage  

(I =

 

−

10 mA, I

 

=

−

0.5 mA)  

V

BE(sat)  

—

—

−

0.7  

−

0.9  

—

—

C

C

B

B

(I =

 

−

100 mA, I

 

=

−

5.0 mA)  

Bas

e

−

Emitter On Voltage  

V

BE(on)  

(I =

 

−

2.0 mA, V  

(I =

 

−

10 mA, V  

C

=

−

5.0 V)  

CE  

=

−

5.0 V)  

CE  

−

0.6  

—

—

—

−

0.75  

−

0.82  

C

SMALL

−

SIGNAL CHARACTERISTICS  

Curren

t

−

Gain — Bandwidth Product  

f

100  

—

—

—

—

—

4.5  

10  

MHz  

pF  

T

(I =

 

−

10 mA, V  

=

−

5.0 Vdc, f = 100 MHz)  

C

CE  

Output Capacitance  

(V =

 

−

10

V

, f =

1

.0 MHz)  

C

ob  

CB  

Noise Figure  

(I =

 

−

0.2 mA, V  

NF  

—

dB  

=

−

5.0 Vdc, R

 

= 2.0 k

Ω

,  

C

CE  

S

f = 1.0 kHz, BW = 200 Hz)  

387  

BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1  

TYPICAL NPN CHARACTERISTICS  

ꢐ ꢑꢒ  

ꢔ ꢑꢓ  

ꢔ ꢑ

 

ꢒ  

ꢤ

ꢨ ꢔ

 

ꢒ ꢤ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢌ

ꢒ ꢑ

 

ꢚ  

ꢒ ꢑ

 

ꢙ  

ꢒ ꢑ

 

ꢘ  

ꢁꢅ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢌ

ꢤ

ꢬ ꢀ

 

ꢧ ꢀ

 

ꢨ ꢔ

 

ꢒ  

ꢁ ꢕ  

ꢕꢅ ꢊꢩ ꢪꢫ ꢏ  

ꢔ ꢑꢒ  

ꢒ ꢑꢙ  

ꢤ ꢬ

 

ꢤ ꢨ

 

ꢔ ꢒ

 

ꢤ  

ꢕ ꢅ ꢊ ꢭ ꢮꢏ ꢁꢅ  

ꢒ ꢑ

 

ꢗ  

ꢒ ꢑ

 

ꢓ  

ꢒ ꢑ

 

ꢛ  

ꢒ ꢑ

 

ꢜ  

ꢒ ꢑꢗ  

ꢒ ꢑꢛ  

ꢒ ꢑꢜ  

ꢒ ꢑ

 

ꢐ  

ꢒ ꢑ

 

ꢔ  

ꢤ

ꢬ ꢀ

 

ꢧ ꢀ

 

ꢨ ꢔ

 

ꢒ  

ꢁ ꢕ  

ꢁ ꢅꢊꢩ ꢪꢫ ꢏ  

ꢒ ꢑꢐ  

ꢒ

ꢒ

ꢑ

ꢐ

ꢒ ꢑꢓ

 

ꢔꢑ ꢒ  

ꢐ

ꢑ

ꢒ

ꢓꢑ ꢒ

 

ꢔꢒ  

ꢐꢒ  

ꢓꢒ ꢔ

 

ꢒꢒ ꢐ

 

ꢒꢒ  

ꢒ ꢑ

 

ꢔ  

ꢒ

ꢑ

ꢐ

ꢒ

ꢑ

ꢜ

ꢒ

ꢑ

ꢓ

ꢒ

ꢑ

ꢘ

ꢔ

ꢑ

ꢒ

ꢐ

ꢑ

ꢒ

ꢜ

ꢑ

ꢒ

ꢓ

ꢑ

ꢒ

ꢘ

ꢑ

ꢒ

ꢔ

ꢒ

ꢐ

ꢒ

ꢜ

ꢒ

ꢓ

ꢒ

ꢘ

ꢒ

ꢔ

ꢒ

ꢒ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅꢁ ꢆꢃ

 

ꢇ ꢁꢈ

 

ꢇ ꢇꢅ

 

ꢉꢆ ꢊ

 

ꢋ ꢌꢍꢎꢏ  

ꢁ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈꢇ

 

ꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢍꢎꢏ  

ꢁ

Figure 1. Normalized DC Current Gain  

Figure 2. “Saturation” and “On” Voltages  

ꢐ ꢑꢒ  

ꢔ ꢑꢗ  

ꢔ ꢑꢐ  

ꢒ ꢑꢙ  

ꢒ ꢑꢛ  

ꢒ

ꢔ ꢑ

 

ꢒ  

ꢔ ꢑ

 

ꢐ  

ꢔ ꢑ

 

ꢗ  

ꢐ ꢑ

 

ꢒ  

ꢐ ꢑ

 

ꢛ  

ꢐ ꢑ

 

ꢙ  

ꢆ ꢨ

 

ꢐꢓ

°

ꢁ  

ꢥ ꢓ

 

ꢓ

°

ꢁ ꢫ

 

ꢭ ꢯ

 

ꢔ ꢐꢓ

°

ꢁ  

ꢌ

ꢀ

ꢁ

ꢨ ꢐꢒ

 

ꢒ ꢋꢌ  

ꢀ

ꢨ

ꢀ

ꢨ

ꢀ

ꢁ

ꢨ ꢓꢒ

 

ꢋ ꢌ  

ꢀ ꢨ

 

ꢔꢒ ꢒ

 

ꢋ ꢌ  

ꢁ

ꢁ

ꢁ

ꢔ ꢒ

 

ꢋꢌ ꢐꢒ

 

ꢋ ꢌ  

ꢒ ꢑꢒ ꢐ  

ꢒꢑ ꢔ  

ꢔꢑ ꢒ  

ꢔ ꢒ

 

ꢐ ꢒ  

ꢒ ꢑꢐ  

ꢔ ꢑꢒ  

ꢔ

ꢒ

ꢔ ꢒ ꢒ  

ꢀ ꢂ

 

ꢕ ꢌꢖ ꢅ

 

ꢁꢈ ꢇ ꢇꢅ

 

ꢉꢆ ꢊ

 

ꢋ ꢌꢏ  

ꢕ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈ

 

ꢇꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢏ  

ꢁ

Figure 3. Collector Saturation Region  

Figure 4. Base

−

Emitter Temperature Coefficient  

388  

BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1  

TYPICAL NPN CHARACTERISTICS  

ꢔ ꢒ  

ꢘ ꢑꢒ  

ꢓ ꢑꢒ  

ꢛ ꢒꢒ  

ꢜ ꢒꢒ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢌ

ꢐ ꢒꢒ  

ꢁ

ꢷ ꢶ  

ꢤ

ꢨ ꢔ

 

ꢒ ꢤ  

ꢁꢅ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢔ ꢒꢒ  

ꢙ ꢒ  

ꢜ ꢑꢒ  

ꢐ ꢑꢒ  

ꢌ

ꢁ

ꢭ ꢶ  

ꢗ

ꢒ

ꢛ ꢒ  

ꢜ ꢒ  

ꢔ ꢑꢒ  

ꢐ

ꢒ

ꢒ

ꢑ

ꢛ

ꢒ

ꢑ

ꢗ

ꢒ

ꢑ

ꢙ

ꢔ

ꢑ

ꢒ

ꢐꢑ ꢒ  

ꢛꢑ ꢒ

 

ꢗꢑ ꢒ

 

ꢙꢑ ꢒ

 

ꢔꢒ  

ꢐ ꢒ  

ꢛ ꢒ  

ꢒ ꢑꢓ

 

ꢒ ꢑꢘ

 

ꢔ ꢑ

 

ꢒ  

ꢐ ꢑꢒ

 

ꢜ ꢑꢒ  

ꢓ ꢑꢒ

 

ꢘ ꢑꢒ

 

ꢔ ꢒ  

ꢐ ꢒ

 

ꢜ ꢒ  

ꢓ ꢒ  

ꢤ ꢂ

 

ꢇ ꢅꢤꢅ

 

ꢇꢖ ꢅ

 

ꢤ ꢃꢄꢆꢌ ꢣꢅ

 

ꢊ ꢤꢃ

 

ꢄꢆꢖ ꢏ  

ꢇ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈꢇ

 

ꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢍꢎꢏ  

ꢁ

Figure 5. Capacitances  

Figure 6. Current

−

Gain

−

Bandwidth Product  

ꢔ ꢑꢒ  

ꢒ ꢑꢙ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢌ

ꢤ

ꢨ ꢓ

 

ꢤ  

ꢁꢅ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢌ

ꢤ

ꢬ ꢀ

 

ꢧ ꢀ

 

ꢨ ꢔ

 

ꢒ  

ꢁ ꢕ  

ꢕꢅ ꢊꢩ ꢪꢫ ꢏ  

ꢐ ꢑꢒ  

ꢔ ꢑꢒ  

ꢒ ꢑꢓ  

ꢒ ꢑꢗ  

ꢒ ꢑ

 

ꢛ  

ꢒ ꢑ

 

ꢐ  

ꢒ

ꢤ

ꢬ ꢤ

 

ꢨ ꢓ

 

ꢑ ꢒ

 

ꢤ  

ꢁꢅ  

ꢕ ꢅ  

ꢒ ꢑꢐ  

ꢤ

ꢬ ꢀ

 

ꢧ ꢀ

 

ꢨ ꢔ

 

ꢒ  

ꢁ ꢕ  

ꢁ ꢅꢊꢩ ꢪꢫ ꢏ  

ꢒ ꢑꢔ

 

ꢒ ꢑꢐ  

ꢔ

ꢑ

ꢒ

ꢔ

ꢒ

ꢔ

ꢒ

ꢒ

ꢒ

ꢑ

ꢐ

ꢒ

ꢑ

ꢓ

ꢔ

ꢑ

ꢒ

ꢐ

ꢑ

ꢒ

ꢓ

ꢑ

ꢒ

ꢔ

ꢒ

ꢐ

ꢒ

ꢓ

ꢒ

ꢔ

ꢒ

ꢒ

ꢐ

ꢒ

ꢒ

ꢀ ꢂ

 

ꢁ ꢃꢄ

 

ꢄꢅꢁ ꢆꢃ

 

ꢇ ꢁ

 

ꢈꢇꢇ ꢅꢉ ꢆ

 

ꢊ ꢋ

 

ꢌꢏ  

ꢁ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈ

 

ꢇꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢏ  

ꢁ

Figure 7. DC Current Gain  

Figure 8. “On” Voltage  

ꢐ ꢑꢒ  

ꢔ ꢑꢗ  

ꢔ ꢑꢐ  

ꢒ ꢑꢙ  

ꢒ ꢑꢛ  

ꢒ

ꢥ ꢔ

 

ꢑꢒ  

ꢥ ꢔ

 

ꢑꢛ  

ꢥ ꢔ

 

ꢑꢙ  

ꢥ ꢐ

 

ꢑꢐ  

ꢥ ꢐ

 

ꢑꢗ  

ꢥ ꢜ

 

ꢑꢒ  

ꢆ

ꢨ

ꢐ

ꢓ

°

ꢁ

ꢌ

ꢔ

ꢒ

ꢒ

ꢋ

ꢌ

ꢐ

ꢒ

ꢒ

ꢋ

ꢌ

ꢐ

ꢒ

ꢋ

ꢌ

ꢓ

ꢒ

ꢋ

ꢌ

θ

ꢤ ꢕ  

ꢱ ꢭꢸ

 

ꢤ  

ꢕ ꢅ  

ꢥ

ꢓ

ꢓ

°

ꢁ

ꢫ

ꢭ

ꢔ

ꢐ

ꢓ

°

ꢁ

ꢀ

ꢨ

ꢁ

ꢔꢒ ꢋ

 

ꢌ  

ꢒ

ꢑ

ꢒ

ꢐ

ꢒ

ꢑ

ꢒ

ꢓ

ꢒ

ꢑ

ꢔ

ꢒ

ꢑ

ꢐ

ꢒ

ꢑ

ꢓ

ꢔ

ꢑ

ꢒ

ꢐ

ꢑ

ꢒ

ꢓ

ꢑ

ꢒ

ꢔ

ꢒ

ꢐ

ꢒ

ꢒ

ꢑ

ꢐ

ꢒ

ꢑ

ꢓ

ꢔ

ꢑ

ꢒ

ꢐ

ꢑ

ꢒ

ꢓ

ꢑ

ꢒ

ꢔ

ꢒ

ꢐ

ꢒ

ꢓ

ꢒ

ꢔ

ꢒ

ꢒ

ꢐ

ꢒ

ꢒ

ꢀ ꢂ

 

ꢕ ꢌꢖ ꢅ

 

ꢁꢈ ꢇ ꢇꢅ

 

ꢉꢆ ꢊ

 

ꢋ ꢌꢏ  

ꢕ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈ

 

ꢇꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢏ  

ꢁ

Figure 9. Collector Saturation Region  

Figure 10. Base

−

Emitter Temperature Coefficient  

389  

BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1  

TYPICAL PNP CHARACTERISTICS  

ꢐ ꢑꢒ  

ꢔ ꢑꢓ  

ꢥ ꢔ

 

ꢑꢒ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢌ

ꢥ ꢒ

 

ꢑꢚ  

ꢥ ꢒ

 

ꢑꢙ  

ꢥ ꢒ

 

ꢑꢘ  

ꢥ ꢒ

 

ꢑꢗ  

ꢥ ꢒ

 

ꢑꢓ  

ꢥ ꢒ

 

ꢑꢛ  

ꢥ ꢒ

 

ꢑꢜ  

ꢥ ꢒ

 

ꢑꢐ  

ꢥ ꢒ

 

ꢑꢔ  

ꢒ

ꢤ

ꢨ ꢥ

 

ꢔꢒ ꢤ  

ꢁꢅ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢤ

ꢬ ꢀ

 

ꢧ ꢀ

 

ꢨ ꢔ

 

ꢒ  

ꢁ ꢕ  

ꢕꢅ ꢊꢩ ꢪꢫ ꢏ  

ꢌ

ꢔ ꢑꢒ  

ꢒ ꢑꢘ  

ꢒ ꢑꢓ  

ꢤ

ꢬ ꢤ

 

ꢨ ꢥ

 

ꢔ ꢒ

 

ꢤ  

ꢁꢅ  

ꢕ ꢅ ꢊ ꢭ ꢮꢏ  

ꢒ ꢑꢜ  

ꢒ ꢑꢐ  

ꢤ

ꢬ ꢀ

 

ꢧ ꢀ

 

ꢨ ꢔ

 

ꢒ  

ꢁ ꢕ  

ꢁ

ꢅ

ꢊ

ꢩ

ꢪ

ꢫ

ꢏ

ꢥ ꢒꢑ

 

ꢐ  

ꢥ ꢒꢑ

 

ꢓ ꢥ

 

ꢔꢑ ꢒ

 

ꢥ ꢐꢑ

 

ꢒ  

ꢥ ꢓꢑ

 

ꢒ ꢥ

 

ꢔꢒ ꢥ

 

ꢐꢒ  

ꢥ ꢓꢒ

 

ꢥ ꢔ

 

ꢒꢒ ꢥ

 

ꢐ ꢒꢒ  

ꢥ ꢒ

 

ꢑꢔ  

ꢥ ꢔ

 

ꢑꢒ  

ꢥ ꢔ

 

ꢒ  

ꢥꢔ ꢒ ꢒ  

ꢥ ꢒ

 

ꢑꢐ  

ꢥ ꢒ

 

ꢑꢓ  

ꢥ ꢐ

 

ꢑꢒ  

ꢥ ꢓ

 

ꢑꢒ  

ꢥ ꢐ

 

ꢒ  

ꢥꢓ ꢒ  

ꢀ ꢂ

 

ꢁ ꢃꢄ

 

ꢄꢅꢁ ꢆꢃ

 

ꢇ ꢁ

 

ꢈꢇꢇ ꢅꢉ ꢆ

 

ꢊ ꢋ

 

ꢌꢍꢎꢏ  

ꢁ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈ

 

ꢇꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢍꢎꢏ  

ꢁ

Figure 11. Normalized DC Current Gain  

Figure 12. “Saturation” and “On” Voltages  

ꢔ ꢑꢒ  

ꢔ ꢑ

 

ꢐ  

ꢔ ꢑ

 

ꢗ  

ꢐ ꢑ

 

ꢒ  

ꢐ ꢑꢛ  

ꢐ ꢑꢙ  

ꢥ ꢐꢑ

 

ꢒ  

ꢥ ꢔꢑ

 

ꢗ  

ꢥ ꢔꢑ

 

ꢐ  

ꢥ ꢒꢑ

 

ꢙ  

ꢥ ꢒꢑ

 

ꢛ  

ꢒ

ꢥ ꢓ

 

ꢓ

°

ꢁ ꢫ

 

ꢭ ꢯ

 

ꢔ ꢐꢓ

°

ꢁ  

ꢆ ꢨ

 

ꢐꢓ

°

ꢁ  

ꢌ

ꢀ

ꢨ

ꢀ

ꢨ ꢥ

 

ꢓꢒ ꢋ

 

ꢌ  

ꢀ

ꢁ

ꢨ ꢥ

 

ꢐ ꢒꢒ

 

ꢋꢌ  

ꢨ ꢥ

 

ꢔ ꢒꢒ

 

ꢋꢌ  

ꢁ

ꢥ ꢔꢒ

 

ꢋꢌ  

ꢁ

ꢀ

ꢁ

ꢀ

ꢁ

ꢨ

ꢥ

ꢐ

ꢒ

ꢋ

ꢌ

ꢥ

ꢒ

ꢑ

ꢒ

ꢐ

ꢥ

ꢒ

ꢑ

ꢔ

ꢥ

ꢔ

ꢑ

ꢒ

ꢥ

ꢔ

ꢒ

ꢥ

ꢐ

ꢒ

ꢥ

ꢒ

ꢑ

ꢐ

ꢥ

ꢔ

ꢑ

ꢒ

ꢥ

ꢔ

ꢒ

ꢥ

ꢔ

ꢒ

ꢒ

ꢀ ꢂ

 

ꢕ ꢌꢖ ꢅ

 

ꢁꢈ ꢇ ꢇꢅ

 

ꢉꢆ ꢊ

 

ꢋ ꢌꢏ  

ꢕ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈ

 

ꢇꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢏ  

ꢁ

Figure 13. Collector Saturation Region  

Figure 14. Base

−

Emitter Temperature  

Coefficient  

ꢔ ꢒ  

ꢘ ꢑꢒ  

ꢓ ꢑꢒ  

ꢛ ꢒꢒ  

ꢜ ꢒꢒ  

ꢁ

ꢷ ꢶ  

ꢆ ꢨ

 

ꢐꢓ

°

ꢁ  

ꢌ

ꢐ ꢒꢒ  

ꢔ ꢓꢒ  

ꢤ

ꢨ

ꢥ

ꢔ

ꢒ

ꢤ

ꢁꢅ  

ꢆ ꢨ

 

ꢐ ꢓ

°

ꢁ  

ꢌ

ꢔ ꢒꢒ  

ꢙ ꢒ  

ꢁ

ꢭ ꢶ  

ꢜ ꢑꢒ  

ꢐ ꢑꢒ  

ꢗ

ꢒ

ꢛ ꢒ  

ꢜ ꢒ  

ꢔ

ꢑ

ꢒ

ꢐ

ꢒ

ꢥ

ꢒ

ꢑ

ꢗ

ꢥ

ꢔ

ꢑ

ꢒ

ꢥ

ꢐ

ꢑ

ꢒ

ꢥ

ꢛ

ꢑ

ꢒ

ꢥ

ꢗ

ꢑ

ꢒ

ꢥ

ꢔ

ꢒ

ꢥ

ꢐ

ꢒ

ꢥ

ꢜ

ꢒ

ꢥ

ꢛ

ꢒ

ꢥ

ꢔ

ꢑ

ꢒ

ꢥ

ꢐ

ꢑ

ꢒ

ꢥ

ꢜ

ꢑ

ꢒ

ꢥ

ꢓ

ꢑ

ꢒ

ꢥ

ꢔ

ꢒ

ꢥ

ꢐ

ꢒ

ꢥ

ꢜ

ꢒ

ꢥ

ꢓ

ꢒ

ꢥ

ꢒ

ꢑ

ꢛ

ꢥ

ꢒ

ꢑ

ꢓ

ꢤ ꢂ

 

ꢇꢅ ꢤ ꢅꢇ

 

ꢖꢅ ꢤ

 

ꢃꢄꢆꢌ ꢣꢅ

 

ꢊ ꢤꢃ

 

ꢄꢆꢖ ꢏ  

ꢇ

ꢀ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅ ꢁꢆꢃ

 

ꢇ ꢁꢈꢇ

 

ꢇꢅ ꢉꢆ

 

ꢊꢋ ꢌ

 

ꢍꢎꢏ  

ꢁ

Figure 15. Capacitances  

Figure 16. Current

−

Gain

−

Bandwidth Product  

390  

BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1  

ꢔ ꢑꢒ  

ꢒ ꢑꢔ  

ꢢ ꢨ

 

ꢒ ꢑꢓ  

ꢒ ꢑꢐ  

ꢒ ꢑꢔ  

ꢒ ꢑꢒ ꢓ  

ꢒ ꢑꢒ ꢐ  

Z

(t) = r(t) R  

q

JA  

q

JA  

JA  

= 328

ꢀ

C/W MAX  

R

q

ꢦ

ꢊ ꢰ

 

ꢼ ꢏ  

D CURVES APPLY FOR POWER  

PULSE TRAIN SHOWN  

READ TIME AT t  

T

1

ꢫ

ꢔ

−

T =

 

P  

R

(t)  

JC  

q

J(pk)  

C

(pk)  

ꢒ ꢑꢒ ꢔ  

ꢒ ꢑꢒ ꢔ  

ꢫ

ꢐ

ꢢꢈ ꢆꢽ

 

ꢁꢽ ꢁꢄ

 

ꢅ ꢂ

 

ꢢ ꢨ

 

ꢫ ꢧ

 

ꢫ  

ꢔ ꢐ  

ꢖꢀꢉ ꢣ ꢄ

 

ꢅ ꢦ

 

ꢈꢄꢖ ꢅ  

ꢒ

ꢑ

ꢒ

ꢒ

ꢔ

ꢒ

ꢔ

ꢑ

ꢒ

ꢔꢒ  

ꢔ ꢒꢒ  

ꢔ ꢑ

 

ꢒꢻ ꢼ  

ꢔ ꢒꢻ

 

ꢼ  

ꢔ ꢒꢒ ꢻ

 

ꢼ  

ꢔ ꢑꢒ ꢻ

 

ꢠ  

ꢫ ꢂ

 

ꢆꢀ ꢠꢅ

 

ꢊꢋ ꢩꢏ  

Figure 17. Thermal Response  

ꢥ ꢐꢒ

 

ꢒ  

ꢔ ꢩ  

ꢜ ꢋꢩ  

ꢥ ꢔꢒ

 

ꢒ  

ꢥ ꢓꢒ  

The safe operating area curves indicate I

 

−

V  

CE  

limits of the  

C

transistor that must be observed for reliable operation. Collector  

load lines for specific circuits must fall below the limits indicated  

by the applicable curve.  

ꢆ ꢨ

 

ꢐꢓ

°

ꢁ  

ꢺ

ꢆ ꢨ

 

ꢐꢓ

°

ꢁ  

ꢌ

The data of Figure 14 is based upon T  

= 150

°

C; T

 

or T  

J(pk)  

C A  

ꢕ ꢁꢓꢓ

 

ꢙ  

ꢕ ꢁꢓꢓ

 

ꢘ  

ꢕ ꢁꢓꢓ

 

ꢗ  

is variable depending upon conditions. Pulse curves are valid  

for duty cycles to 10% provided T

 

≤

150

°

C. T

 

may be  

J(pk) J(pk)  

ꢥ

ꢔ

ꢒ

calculated from the data in Figure 13. At high case or ambient  

temperatures, thermal limitations will reduce the power that can  

be handled to values less than the limitations imposed by the  

secondary breakdown.  

ꢥ

ꢓ

ꢑ

ꢒ

ꢕ ꢃꢉ

 

ꢢꢀ ꢉꢣ

 

ꢳꢀ ꢇꢅ

 

ꢄꢀ ꢠ

 

ꢀꢆ  

ꢆꢴ ꢅꢇ ꢠ

 

ꢌꢄ ꢄꢀ

 

ꢠ ꢀꢆ  

ꢖ

ꢅ

ꢁ

ꢃ

ꢉ

ꢢ

ꢕ

ꢇ

ꢅ

ꢌ

ꢹ

ꢢ

ꢃ

ꢳ

ꢉ

ꢄ

ꢀ

ꢠ

ꢀ

ꢆ

ꢥ

ꢐ

ꢑ

ꢒ

ꢥ

ꢔ

ꢑ

ꢒ

ꢥ

ꢓ

ꢑ

ꢒ

ꢥ ꢔꢒ  

ꢥ

ꢜ

ꢒ

ꢥ

ꢛ

ꢓ

ꢥ

ꢗ

ꢓ

ꢥ

ꢔ

ꢒ

ꢒ

ꢤ ꢂ

 

ꢁꢃ ꢄ

 

ꢄꢅꢁ ꢆꢃ

 

ꢇꢥ ꢅ

 

ꢠꢀ ꢆꢆ

 

ꢅꢇ ꢤ

 

ꢃꢄꢆꢌ ꢣꢅ

 

ꢊ ꢤꢏ  

ꢁꢅ  

Figure 18. Active Region Safe Operating Area  

391  

BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1  

INFORMATION FOR USING THE SOT

−

363 SURFACE MOUNT PACKAGE  

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  

Surface mount board layout is a critical portion of the  

total design. The footprint for the semiconductor packages  

must be the correct size to insure proper solder connection  

interface between the board and the package. With the  

correct pad geometry, the packages will self align when  

subjected to a solder reflow process.  

0.5 mm (min)  

SOT

−

363  

1.9 mm  

SOT

−

363 POWER DISSIPATION  

The power dissipation of the SOT

−

363 is a function of  

The melting temperature of solder is higher than the rated  

temperature of the device. When the entire device is heated  

to a high temperature, failure to complete soldering within  

a short time could result in device failure. Therefore, the  

following items should always be observed in order to  

minimize the thermal stress to which the devices are  

subjected.  

•

Always preheat the device.  

•

The delta temperature between the preheat and  

soldering should be 100

°

C or less.*  

the pad size.

 

This can vary from the minimum pad size for  

soldering to a pad size given for maximum power  

dissipation. Power dissipation for a surface mount device is  

determined by T  

temperature of the die, R  

, the maximum rated junction  

, the thermal resistance from  

J(max)  

θ

JA  

the device junction to ambient, and the operating  

temperature, T

 

. Using the values provided on the data  

A

sheet for the SOT

−

363 package, P

 

can be calculated as  

D

follows:  

•

When preheating and soldering, the temperature of the  

leads and the case must not exceed the maximum  

temperature ratings as shown on the data sheet. When  

using infrared heating with the reflow soldering  

method, the difference shall be a maximum of 10

°

C.  

•

The soldering temperature and time shall not exceed  

260

°

C for more than 10 seconds.  

•

When shifting from preheating to soldering, the  

maximum temperature gradient shall be 5

°

C or less.  

•

After soldering has been completed, the device should  

be allowed to cool naturally for at least three minutes.  

Gradual cooling should be used as the use of forced  

cooling will increase the temperature gradient and  

result in latent failure due to mechanical stress.  

•

Mechanical stress or shock should not be applied  

during cooling.  

T

−

T  

A

J(max)  

P

=

D

R

θ

JA  

The values for the equation are found in the maximum  

ratings table on the data sheet. Substituting these values  

into the equation for an ambient temperature T

 

of 25

°

C,  

one can calculate the power dissipation of the device which  

in this case is 150 milliwatts.  

A

150

°

C

−

25

°

C  

833

°

C/W  

P

=

= 150 milliwatts  

D

The 833

°

C/W for the SOT

−

363 package assumes the use  

of the recommended footprint on a glass epoxy printed  

circuit board to achieve a power dissipation of  

150 milliwatts.

 

There are other alternatives to achieving  

higher power dissipation from the SOT

−

363 package.  

Another alternative would be to use a ceramic substrate or  

an aluminum core board such as Thermal Clad



. Using a  

board material such as Thermal Clad, an aluminum core  

board, the power dissipation can be doubled using the same  

footprint.  

* Soldering a device without preheating can cause  

excessive thermal shock and stress which can result in  

damage to the device.  

SOLDERING PRECAUTIONS  

392