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BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
•
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
2
Rating
Symbol
Value
Unit
EMITTER
Collector-Emitter Voltage
V
V
V
V
CEO
CBO
EBO
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
−65
−45
−30
3
Collector-Base Voltage
V
1
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
−80
−50
−30
2
SOT−23 (TO−236)
CASE 318
Emitter−Base Voltage
−5.0
−100
−200
V
STYLE 6
Collector Current − Continuous
Collector Current − Peak
I
C
I
C
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
T
o
tal Device Dissipation FR
−
5
B
oard,
P
D
xx M
G
225
1.8
mW
mW/
°
C
A
G
Derate above 25
°
C
1
Thermal Resistance,
Junction−to−Ambient
R
556
°
C/W
q
JA
xx =
Device Code
T
o
tal Device Dissipation Alumina
P
D
300
2.4
mW
mW/
°
C
A
M
= Date Code*
Derate above 25
°
C
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance,
Junction−to−Ambient
R
417
°
C/W
q
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Junction and Storage
T
e
mperature
T , T
J
−
5
5 to +150
°
C
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5
= 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
2. Alumina
= 0.4 x 0.3 x 0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 15
BC856ALT1/D
BC856ALT1G Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collecto
r
−
E
mitter Breakdown Voltage
(I =
−10 mA)
C
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSBVC858 BC859 Series
V
−65
−45
−30
−
−
−
−
−
−
V
(BR)CEO
Collecto
r
−
E
mitter Breakdown Voltage
BC856 S, SBC856eries
V
−80
−50
−30
−
−
−
−
−
−
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
−10
m
A, V
= 0)
BC857A, SBC857A, BC857B, SBC857B Only
C
EB
BC858, NSVB858, BC859 Series
Collecto
r
−
B
ase Breakdown Voltage
(I =
−10
m
A)
C
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V
V
−80
−50
−30
−
−
−
−
−
−
Emitte
r
−
B
ase Breakdown Voltage
(I =
−1.0
m
A)
E
BC856, SBC856 Series
BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
−5.0
−5.0
−5.0
−
−
−
−
−
−
Collector Cutoff Current (V
= −30 V)
I
−
−
−
−
−15
−4.0
nA
m
A
CB
CBO
Collector Cutoff Current
(V =
−30
V
, T
=
1
50
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
BC856A, SBC856A, BC857A, SBC857A, BC858A
h
FE
−
−
90
150
−
−
−
(I =
−10
m
A, V
= −5.0 V)
BC856B, SBC856B, BC857B, SBC857B,
C
CE
BC858B, NSVBC858B
BC857C, SBC857C BC858C
−
270
180
290
520
−
(I =
−2.0 mA, V
= −5.0 V)
BC856A, SBC856A, BC857A,
SBC857A, BC858A
BC856B, SBC856B, BC857B, SBC857B, BC858B,
NSVBC858B, BC859B
125
220
420
250
475
800
C
CE
BC857C, SBC857C, BC858C, BC859C
Collecto
r
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
V
V
V
CE(sat)
−
−
−
−
−0.3
−0.65
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter Saturation Voltage
(I =
−10 mA, I
= −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I =
−100 mA, I
= −5.0 mA)
C
B
Bas
e
−
E
mitter On Voltage
(I =
−2.0 mA, V
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I =
−10 mA, V
= −5.0 V)
C
CE
SMALL
−
S
IGNAL CHARACTERISTICS
Curren
t
−
G
ain − Bandwidth Product
f
100
−
−
−
−
MHz
pF
T
(I =
−10 mA, V
= −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
4.5
ob
(V =
−10
V
, f =
1
.0 MHz)
CB
Noise Figure
NF
dB
(I =
−0.2 mA, V
= −5.0 Vdc, R
= 2.0 k
W
, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series
BC859 Series
−
−
−
−
10
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
BC856ALT1G Series
BC857/BC858/BC859/SBC857/NSVBC858
2.0
1.5
-1.0
T =
25
°
C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
V
@ I
/I =
10
C B
BE(sat)
T =
25
°
C
A
1.0
0.7
0.5
V
BE(on)
@ V
= -10 V
CE
0.3
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55
°
C to +125
°
C
T =
25
°
C
A
I =
C
-10 mA
I =
-50 mA
C
I =
-200 mA
C
I =
-100 mA
C
I =
-20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T =
25
°
C
A
200
150
V
CE
= -10 V
T =
25
°
C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30
-40
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
3
BC856ALT1G Series
BC856/SBC856
-1.0
T =
25
°
C
J
V
CE
= -5.0 V
-0.8
-0.6
T =
25
°
C
A
V
@ I
/I =
10
C B
BE(sat)
2.0
1.0
0.5
V
BE
@ V
= -5.0 V
CE
-0.4
-0.2
0
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.1 -0.2
-1.0 -2.0
-10 -20
-100 -200
-50
-0.2 -0.5
-1.0 -2.0
-5.0 -10
-20
-50 -100
-200
-5.0
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
-2.0
-1.6
-1.2
-0.8
-0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-100 mA
-200 mA
I =
C
-10 mA
-20 mA
-50 mA
q
for V
BE
VB
-55
°
C to 125
°
C
T =
25
°
C
J
-0.02 -0.05
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-0.2 -0.5
-1.0 -2.0
-5.0 -10 -20
-50 -100
-200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
20
V
CE
= -5.0 V
500
T =
25
°
C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
-0.1 -0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-1.0
-10
-100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
4
BC856ALT1G Series
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
(t) = r(t) R
q
JC
0.1
q
JC
0.1
0.07
0.05
R
Z
= 83.3
°
C/W MAX
(t) = r(t) R
q
JA
q
JC
P
(pk)
SINGLE PULSE
q
JA
R
= 200
°
C/W MAX
t
1
q
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
2
0.03
0.02
DUTY CYCLE, D = t
/t
1 2
1
T
– T
= P
C
R (t)
q
JC
J(pk)
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk 10ꢁk
t, TIME (ms)
Figure 13. Thermal Response
The safe operating area curves indicate I
−V limits
of
-200
C
CE
1 s
3 ms
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
-100
-50
T =
25
°
C
T =
25
°
C
A
J
The data of Figure 14 is based upon T
T is
variable depending upon conditions. Pulse curves are
= 150
°
C; T
or
J(pk)
C
A
valid for duty cycles to 10% provided T
≤
150
°
C. T
BC558, BC559
BC557
J(pk)
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
-10
BC556
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
5
BC856ALT1G Series
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
BC856ALT1G
3A
SOT−23
(Pb−Free)
3,000 /
T
a
pe & Reel
SBC856ALT1G*
BC856ALT3G
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
BC856BLT1G
3B
SOT−23
(Pb−Free)
SBC856BLT1G*
BC856BLT3G
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
SBC856BLT3G*
BC857ALT1G
3E
3F
SOT−23
(Pb−Free)
SBC857ALT1G*
BC857BLT1G
SOT−23
(Pb−Free)
SBC857BLT1G*
BC857BLT3G
NSVBC857BLT3G*
BC857CLT1G
3G
SOT−23
(Pb−Free)
SBC857CLT1G*
BC857CLT3G
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
BC858ALT1G
3J
SOT−23
(Pb−Free)
BC858BLT1G
3K
SOT−23
(Pb−Free)
NSVBC858BLT1G*
BC858BLT3G
3L
SOT−23
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
3,000 /
T
a
pe & Reel
10,000 /
T
a
pe & Reel
(Pb−Free)
BC858CLT1G
BC858CLT3G
BC859BLT1G
BC859BLT3G
BC859CLT1G
BC859CLT3G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
4B
4C
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT
−
23 (TO
−
236)
CASE 318
−
08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
NOTES:
D
1. DIMENSIONING
AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING
DIMENSION: MILLIMETERS.
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS
D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10
°
3X
b
L1
VIEW C
e
TOP VIEW
L1
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXM
G
G
1
3X
0.90
XXX = Specific Device Code
2.90
M
= Date Code
G
= Pb
−
Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present.
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1.
EMITTER
2. BASE
STYLE 8:
PIN 1.
BASE
2. EMITTER
3. COLLECTOR
PIN 1.
ANODE
2. NO
CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1.
ANODE
2. ANODE
STYLE 10:
STYLE 11:
STYLE 12:
STYLE 13:
PIN 1.
SOURCE
2. DRAIN
STYLE 14:
PIN 1.
CATHODE
2. GATE
PIN 1.
DRAIN
2. SOURCE
3. GATE
PIN 1.
ANODE
PIN 1.
CATHODE
2. CATHODE
3. ANODE
2. CATHODE
3. CATHODE
−
ANODE
3. CATHODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1.
NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1.
GATE
2. CATHODE
3. ANODE
PIN 1.
ANODE
2. CATHODE
3. CATHODE
PIN 1.
NO CONNECTION
PIN 1.
CATHODE
PIN 1.
CATHODE
2. ANODE
3. GATE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE
−
ANODE
3. CATHODE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1.
ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1.
GATE
2. SOURCE
3. DRAIN
PIN 1.
RETURN
2. OUTPUT
3. INPUT
PIN 1.
GATE
2. DRAIN
PIN 1.
ANODE
2. CATHODE
3. GATE
PIN 1.
CATHODE
2. ANODE
3. SOURCE
3. NO
CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1.
CATHODE
2. CATHODE
3. CATHODE
PIN 1.
ANODE
2. ANODE
3. ANODE
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ON Semiconductor and
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